公开(公告)号：US20240304507A1

公开(公告)日：2024-09-12

申请号：US18179036

申请日：2023-03-06

申请人： Wolfspeed, Inc.

发明人： Geza Dezsi ,  Yusheng Lin ,  Kuldeep Saxena

IPC分类号： H01L23/31 ,  H01L23/495 ,  H01L23/498

CPC分类号： H01L23/3107 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/49811 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48175 ,  H01L2224/49111 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/13091

摘要： Power semiconductor packages are provided. In one example, a power semiconductor package may include a power semiconductor die. The power semiconductor package may include a housing having a first side and a second side opposing the first side. The power semiconductor package may include one or more electrical leads extending from the first side. The power semiconductor package may include one or more leadless surface mount type (SMT) connection structures on the second side.

公开(公告)号：USD969762S1

公开(公告)日：2022-11-15

申请号：US29811014

申请日：2021-10-11

申请人： Wolfspeed, Inc.

设计人： Kuldeep Saxena

公开(公告)号：US20230420329A1

公开(公告)日：2023-12-28

申请号：US17849316

申请日：2022-06-24

申请人： Wolfspeed, Inc.

发明人： Adil Salman ,  Ajay Sekar Chandrasekaran ,  Kuldeep Saxena

IPC分类号： H01L23/367 ,  H01L23/373 ,  H01L23/00

CPC分类号： H01L23/3675 ,  H01L23/3677 ,  H01L23/3735 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/73265

摘要： Top-side cooled semiconductor packages are disclosed. A top-side cooled semiconductor package may be a leaded or a leadless semiconductor package. A top-side cooled semiconductor package can include built-in electrical isolation for a semiconductor die within a housing of the semiconductor package. A top-side cooled semiconductor package may include one or more arrangements of creepage extension structures. A creepage extension structure may be arranged as part of a top side of a housing, of part of at least one peripheral side of the housing, as part of a bottom side of the housing, or combinations thereof.

公开(公告)号：US20240243031A1

公开(公告)日：2024-07-18

申请号：US18154353

申请日：2023-01-13

申请人： Wolfspeed, Inc.

发明人： Yusheng Lin ,  Kuldeep Saxena ,  Devarajan Balaraman

IPC分类号： H01L23/373 ,  H01L23/538 ,  H01L25/07 ,  H01L29/16 ,  H01L29/872

CPC分类号： H01L23/3735 ,  H01L23/5389 ,  H01L25/072 ,  H01L29/1608 ,  H01L29/872

摘要： Power semiconductor packages are provided. In one example, a power semiconductor package may include a first carrier substrate. The first carrier substrate may include one or more conductive pads. The power semiconductor package may include a second carrier substrate. The second carrier substrate may include one or more conductive leads. The power semiconductor package may include a power semiconductor die having a first surface and an opposing second surface. The first surface of the power semiconductor die may be directly coupled to the first carrier substrate. The second surface of the power semiconductor die may be directly coupled to the second carrier substrate.