公开(公告)号：US20230210023A1

公开(公告)日：2023-06-29

申请号：US17561439

申请日：2021-12-23

申请人： Intel Corporation

发明人： Hubert C. George ,  Ravi Pillarisetty ,  JongSeok Park ,  Stefano Pellerano ,  Lester F. Lampert ,  Thomas F. Watson ,  Florian Luthi ,  James S. Clarke

IPC分类号： H01L27/18 ,  H01L39/22 ,  H03H7/38 ,  H01P3/00 ,  H01L39/24 ,  H01L39/04 ,  G06N10/80 ,  H01L23/00 ,  H05K1/18

CPC分类号： H01L27/18 ,  H01L39/228 ,  H03H7/38 ,  H01P3/003 ,  H01L39/24 ,  H01L39/04 ,  H01L39/221 ,  G06N10/80 ,  H01L24/48 ,  H01L24/45 ,  H01L2224/49171 ,  H01L2224/45144 ,  H05K2201/10045 ,  H01L2924/0495 ,  H01L2224/48225 ,  H01L2224/45186 ,  H05K2201/10522 ,  H05K1/18 ,  H01L2224/45147 ,  H01L2224/48153

摘要： Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.

公开(公告)号：US20150287661A1

公开(公告)日：2015-10-08

申请号：US14677601

申请日：2015-04-02

申请人： Kyocera America Inc

发明人： Mark EBLEN ,  Franklin KIM ,  Chong Il-Park ,  Shinichi HIRA

IPC分类号： H01L23/367 ,  H01L23/00 ,  H01L25/00 ,  H01L21/48 ,  H01L23/373 ,  H01L25/065

CPC分类号： H01L23/3675 ,  H01L21/4871 ,  H01L21/50 ,  H01L23/047 ,  H01L23/10 ,  H01L23/36 ,  H01L23/3736 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/45124 ,  H01L2224/4809 ,  H01L2224/48137 ,  H01L2224/48153 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83801 ,  H01L2224/85399 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/206 ,  H01L2924/2065 ,  H01L2924/30111 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/0665 ,  H01L2924/0105

摘要： An electronics packaging system includes an insulator that electrically insulates a heat sink from electrical leads. An interface between the insulator and the heat sink includes a stress reliever constructed such that a stiffness of the interface is greater than the stiffness of the interface without the stress reliever.

摘要翻译： 电子封装系统包括使散热器与电引线电绝缘的绝缘体。 绝缘体和散热器之间的界面包括应力消除器，其被构造成使得界面的刚度大于没有应力消除器的界面刚度。

公开(公告)号：US11706852B2

公开(公告)日：2023-07-18

申请号：US16686521

申请日：2019-11-18

申请人： Illinois Tool Works Inc.

发明人： Marco Carcano ,  Michele Sclocchi ,  Daniele Chirico

IPC分类号： H05B6/68 ,  H01L23/66 ,  H01L23/00 ,  H05B6/66 ,  H03F3/213

CPC分类号： H05B6/687 ,  H01L23/66 ,  H01L24/40 ,  H01L24/48 ,  H01L24/84 ,  H01L24/85 ,  H03F3/213 ,  H05B6/664 ,  H05B6/686 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2224/40091 ,  H01L2224/40101 ,  H01L2224/40195 ,  H01L2224/45014 ,  H01L2224/4801 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48153 ,  H01L2924/30111 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

摘要： Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

公开(公告)号：US09728293B2

公开(公告)日：2017-08-08

申请号：US14455858

申请日：2014-08-08

申请人： Sang-Young Kim ,  Kyung-Soo Rho ,  Ho-Jeong Moon ,  Hyuck Shin ,  Sun-Nyeong Jung

发明人： Sang-Young Kim ,  Kyung-Soo Rho ,  Ho-Jeong Moon ,  Hyuck Shin ,  Sun-Nyeong Jung

IPC分类号： G01N23/02 ,  G21K1/10 ,  G01N23/04 ,  H01L21/66

CPC分类号： H01L22/12 ,  G01N23/04 ,  G21K1/10 ,  H01L23/3114 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/48153

摘要： An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

公开(公告)号：US20150035171A1

公开(公告)日：2015-02-05

申请号：US13958276

申请日：2013-08-02

申请人： Infineon Technologies AG

发明人： Albert Birner ,  Helmut Brech ,  Matthias Zigldrum

IPC分类号： H01L23/00

CPC分类号： H01L24/06 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/70 ,  H01L24/73 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/05578 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06133 ,  H01L2224/06153 ,  H01L2224/09133 ,  H01L2224/09153 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/45166 ,  H01L2224/45169 ,  H01L2224/45176 ,  H01L2224/45181 ,  H01L2224/45184 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48153 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73271 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/053 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1205 ,  H01L2924/1301 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/207 ,  H01L2924/00012 ,  H01L2224/37099 ,  H01L2224/84

摘要： In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.

摘要翻译： 根据本发明的实施例，半导体器件包括设置在衬底的第一侧的第一接合焊盘。 第一接合焊盘包括第一多个焊盘段。 第一多个焊盘段的至少一个焊盘段与第一多个焊盘段的其余焊盘段电隔离。

公开(公告)号：US11901326B2

公开(公告)日：2024-02-13

申请号：US17546695

申请日：2021-12-09

申请人： Mitsubishi Electric Corporation

发明人： Shinsuke Asada ,  Satoru Ishikawa ,  Yuki Yano ,  Shohei Ogawa ,  Kiyoshi Arai

IPC分类号： H01L23/00

CPC分类号： H01L24/37 ,  H01L24/35 ,  H01L24/48 ,  H01L2224/35125 ,  H01L2224/3701 ,  H01L2224/48153

摘要： An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.

公开(公告)号：US09543260B2

公开(公告)日：2017-01-10

申请号：US13958276

申请日：2013-08-02

申请人： Infineon Technologies AG

发明人： Albert Birner ,  Helmut Brech ,  Matthias Zigldrum

IPC分类号： H01L23/538 ,  H01L23/00

CPC分类号： H01L24/06 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/70 ,  H01L24/73 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/05578 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06133 ,  H01L2224/06153 ,  H01L2224/09133 ,  H01L2224/09153 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/45166 ,  H01L2224/45169 ,  H01L2224/45176 ,  H01L2224/45181 ,  H01L2224/45184 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48153 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73271 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/053 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1205 ,  H01L2924/1301 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/207 ,  H01L2924/00012 ,  H01L2224/37099 ,  H01L2224/84

摘要： In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.

摘要翻译： 根据本发明的实施例，半导体器件包括设置在衬底的第一侧的第一接合焊盘。 第一接合焊盘包括第一多个焊盘段。 第一多个焊盘段的至少一个焊盘段与第一多个焊盘段的其余焊盘段电隔离。

公开(公告)号：US09331000B2

公开(公告)日：2016-05-03

申请号：US14677601

申请日：2015-04-02

申请人： Kyocera America Inc

发明人： Mark Eblen ,  Franklin Kim ,  Chong Il-Park ,  Shinichi Hira

IPC分类号： H01L23/10 ,  H01L23/495 ,  H01L23/367 ,  H01L21/48 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/047 ,  H01L23/36 ,  H01L21/50 ,  H01L23/373

CPC分类号： H01L23/3675 ,  H01L21/4871 ,  H01L21/50 ,  H01L23/047 ,  H01L23/10 ,  H01L23/36 ,  H01L23/3736 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/45124 ,  H01L2224/4809 ,  H01L2224/48137 ,  H01L2224/48153 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83801 ,  H01L2224/85399 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/206 ,  H01L2924/2065 ,  H01L2924/30111 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/0665 ,  H01L2924/0105

摘要： An electronics packaging system includes an insulator that electrically insulates a heat sink from electrical leads. An interface between the insulator and the heat sink includes a stress reliever constructed such that a stiffness of the interface is greater than the stiffness of the interface without the stress reliever.

摘要翻译： 电子封装系统包括使散热器与电引线电绝缘的绝缘体。 绝缘体和散热器之间的界面包括应力消除器，其被构造成使得界面的刚度大于没有应力消除器的界面刚度。

公开(公告)号：US20150103974A1

公开(公告)日：2015-04-16

申请号：US14455858

申请日：2014-08-08

申请人： SANG-YOUNG KIM ,  KYUNG-SOO RHO ,  HO-JEONG MOON ,  HYUCK SHIN ,  SUN-NYEONG JUNG

发明人： SANG-YOUNG KIM ,  KYUNG-SOO RHO ,  HO-JEONG MOON ,  HYUCK SHIN ,  SUN-NYEONG JUNG

IPC分类号： G21K1/10 ,  G01N23/04

CPC分类号： H01L22/12 ,  G01N23/04 ,  G21K1/10 ,  H01L23/3114 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/48153

摘要： An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

摘要翻译： 设置X射线源，并且将检测器设置为与X射线源相邻。 试样夹持器设置在X射线源和检测器之间。 过滤器设置在X射线源和测试样本架之间。 滤光器具有板状半导体，粒状半导体或其组合。

公开(公告)号：US20240355724A1

公开(公告)日：2024-10-24

申请号：US18683431

申请日：2021-10-25

申请人： Mitsubishi Electric Corporation

发明人： Tatsuya KAWASE

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/15 ,  H01L23/373 ,  H01L25/18

CPC分类号： H01L23/49838 ,  H01L23/15 ,  H01L23/373 ,  H01L23/49822 ,  H01L24/32 ,  H01L24/29 ,  H01L24/30 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/18 ,  H01L2224/29111 ,  H01L2224/3003 ,  H01L2224/32225 ,  H01L2224/48137 ,  H01L2224/48153 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091

摘要： A semiconductor device includes a first insulating material, a first conductor pattern provided on an upper surface of the first insulating material, a second conductor pattern provided on a lower surface of the first insulating material, a semiconductor element bonded to an upper surface of the first conductor pattern by a first bonding material, and a first base plate bonded to a lower surface of the second conductor pattern by a second bonding material, in which a ratio κ1/D1 satisfies κ1/D1≤35×104W/(m2K) where κ1 represents thermal conductivity of the first insulating material and D1 represents a thickness of the first insulating material, solidus temperature of the first bonding material is equal to or higher than solidus temperature of the second bonding material, and a difference between the solidus temperature of the first bonding material and the solidus temperature of the second bonding material is within 40° C.