Abstract:
A semiconductor die stack includes a base die and core dies stacked over the base die. Each of the base die and the core dies include a semiconductor substrate, a front side passivation layer formed over a front side of the semiconductor substrate, a back side passivation layer over a back side of the semiconductor substrate, a through-via vertically penetrating the semiconductor substrate and the front side passivation layer, and a bump, a support pattern, and a bonding insulating layer formed over the front side passivation layer. Top surfaces of the bump, the support pattern, and the bonding insulating layer are co-planar. The bump is vertically aligned with the through-via. The support pattern is spaced apart from the through-via and the bump. The support pattern includes a plurality of first bars that extend in parallel with each other in a first direction and a plurality of second bars that extend in parallel with each other in a second direction.
Abstract:
An electronic device, including: a conductive element having a conductive region on a front surface thereof; a fixing element having a fixing region on a front surface thereof, the fixing element being located apart from the conductive element in a plan view of the electronic device; and a wiring member having a flat plate shape. The wiring member includes a first portion bonded to the conductive region of the conductive element, a second portion fixed to the fixing region of the fixing element, and an inclined portion between the first portion and the second portion, the inclined portion being elastically deformable. In a side view of the electronic device, the conductive region of the conductive element and the fixing region of the fixing element are at different heights in a thickness direction of the electronic device.
Abstract:
An electronic device comprising: an array substrate having a first electrode and a second electrode; a first connecting member arranged on the first electrode; a first LED chip mounted on the first connecting member; a second connecting member arranged on the second electrode and being thicker than the first connecting member; and a second LED chip mounted on the second connecting member. A distance from a reference surface of the array substrate to a top surface of the second connecting member is larger than a distance from the reference surface to a top surface of the first connecting member.
Abstract:
A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more.
Abstract:
An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.
Abstract:
An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.
Abstract:
A semiconductor wafer stack and a method of forming a semiconductor device is disclosed. The method includes providing a wafer stack with first and second wafers bonded together. The wafers include edge and non-edge regions, and at least one of the first and second wafers includes devices formed in the non-edge region. The first wafer serves as the base wafer while the second wafer serves as the top wafer of the wafer stack, where the base wafer is wider than the top wafer, providing a step edge of the wafer stack. An edge protection seal is formed on the wafer stack, where first and second layers are deposited on the wafer stack including at the top wafer and step edge of the wafer stack. The portion of the first and second layers on the step edge of the wafer stack forms the edge protection seal which protects the devices in the wafer stack in subsequent processing.
Abstract:
A mounting method of mounting chips on a substrate includes a temporarily-bonding process, and a main-bonding process. Temporarily-bonding process is to perform a first basic process, repeatedly depending on the number of the chips. First basic process includes a first step and a second step. First step is to align, on a first metal layer of the substrate, a second metal layer of each chip. Second step is to temporarily bond each chip by subjecting the first and second metal layers to solid phase diffusion bonding. Main-bonding process is to perform a second basic process, repeatedly depending on the number of the chips. Second basic process includes a third step and a fourth step. Third step is to recognize a position of each chip temporarily mounted on the substrate. Fourth step is to firmly bond each chip by subjecting the first and second metal layers to liquid phase diffusion bonding.
Abstract:
Disclosed herein is an automatic fluid dispensing method and system for dispensing fluid on the surface of a plate-like material, or substrate, including a semiconductor wafer for imprint lithography processes. The dispensing method uses fluid dispenser and a substrate stage that may generate relative lateral motions between a fluid dispenser tip a substrate. Also described herein are methods and devices for creating a planar surface on a substrate using a substantially unpatterned planar template.
Abstract:
An electronic device is described comprising at least one chip enclosed in a package, in turn provided with a metallic structure or leadframe having a plurality of connection pins, this chip having at least one first contact realized on a first face and at least one second contact realized on a second and opposite face of this chip. The chip comprises at least one through via crossing the whole section of the chip as well as a metallic layer extending from the second contact arranged on the first face, along walls of the at least one through via up to the second and opposite face in correspondence with an additional pad. The electronic device comprises at least one interconnection layer for the electrical and mechanical connection between the chip and the metallic structure having at least one portion realized in correspondence with the at least one through via so as to bring the second contact placed on the second face of the chip back on its first face. An assembly process of such an electronic device is also described.