公开(公告)号：US20160071817A1

公开(公告)日：2016-03-10

申请号：US14787397

申请日：2013-07-05

申请人： EV GROUP E. THALLNER GMBH

发明人： Bernhard Rebhan

IPC分类号： H01L23/00

CPC分类号： H01L24/83 ,  H01L22/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03602 ,  H01L2224/03616 ,  H01L2224/0381 ,  H01L2224/05561 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/061 ,  H01L2224/274 ,  H01L2224/2741 ,  H01L2224/27444 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27464 ,  H01L2224/2781 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29023 ,  H01L2224/29028 ,  H01L2224/29187 ,  H01L2224/8301 ,  H01L2224/83011 ,  H01L2224/83012 ,  H01L2224/83013 ,  H01L2224/83026 ,  H01L2224/8312 ,  H01L2224/83121 ,  H01L2224/83203 ,  H01L2224/8383 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2224/05552

摘要： A method for bonding of a first, at least partially metallic contact surface of a first substrate to a second, at least partially metallic contact surface of a second substrate, with the following steps, especially the following progression: application of a sacrificial layer which is at least partially, especially predominantly soluble in the material of at least one of the contact surfaces to at least one of the contact surfaces, bonding of the contact surfaces with at least partial solution of the sacrificial layer in at least one of the contact surfaces.

摘要翻译： 一种用于将第一衬底的第一至少部分金属接触表面接合到第二衬底的第二至少部分金属接触表面的方法，具有以下步骤，特别是以下步骤：施加牺牲层，其为 至少部分地，特别主要地可溶于至少一个接触表面的材料中的至少一个接触表面，接触表面与至少一个接触表面中的牺牲层的至少部分溶液的接合。

公开(公告)号：US09132496B2

公开(公告)日：2015-09-15

申请号：US14468660

申请日：2014-08-26

申请人： Raytheon Company

发明人： Buu Q. Diep ,  Thomas A. Kocian ,  Roland W. Gooch

IPC分类号： B23K31/02 ,  B23K1/20 ,  B23K1/00 ,  B23K1/008 ,  B23K3/047 ,  B23K3/08 ,  H01L21/67 ,  H01L23/00

CPC分类号： B23K1/206 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/20 ,  B23K1/203 ,  B23K3/047 ,  B23K3/08 ,  B23K2101/40 ,  H01L21/67092 ,  H01L21/67173 ,  H01L21/67207 ,  H01L24/27 ,  H01L24/29 ,  H01L24/742 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/27318 ,  H01L2224/27334 ,  H01L2224/2745 ,  H01L2224/2746 ,  H01L2224/2781 ,  H01L2224/27826 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/7501 ,  H01L2224/75102 ,  H01L2224/83013 ,  H01L2224/83201 ,  H01L2224/834 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2924/0105 ,  H01L2924/00

摘要： In certain embodiments, a system includes a deposition system and a plasma/bonding system. The deposition system deposits a solder outwardly from a substrate of a number of substrates. The plasma/bonding system comprises a plasma system configured to plasma clean the substrate and a bonding system configured to bond the substrates. The plasma/bonding system at least reduces reoxidation of the solder. In certain embodiments, a method comprises depositing solder outwardly from a substrate, removing metal oxide from the substrate, and depositing a capping layer outwardly from the substrate to at least reduce reoxidation of the solder.

摘要翻译： 在某些实施例中，系统包括沉积系统和等离子/粘合系统。 沉积系统从许多基底的衬底向外沉积焊料。 等离子体/粘合系统包括构造成等离子体清洁基板的等离子体系统和被配置为结合基板的接合系统。 等离子体/粘合系统至少减少了焊料的再氧化。 在某些实施例中，一种方法包括从衬底向外沉积焊料，从衬底去除金属氧化物，以及从衬底向外沉积覆盖层以至少减少焊料的再氧化。

公开(公告)号：US20130285248A1

公开(公告)日：2013-10-31

申请号：US13836807

申请日：2013-03-15

申请人： ASIA PACIFIC MICROSYSTEMS, INC.

发明人： Hung-Lin Yin ,  Jerwei Hsieh ,  Li-Yuan Lin

IPC分类号： H01L23/498 ,  H01L21/762

CPC分类号： H01L23/49866 ,  B81C1/00269 ,  B81C2203/019 ,  H01L21/50 ,  H01L21/76251 ,  H01L23/10 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0347 ,  H01L2224/03614 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/27614 ,  H01L2224/29011 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29084 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32146 ,  H01L2224/32148 ,  H01L2224/32235 ,  H01L2224/32238 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/48091 ,  H01L2224/48148 ,  H01L2224/48228 ,  H01L2224/48463 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73215 ,  H01L2224/81011 ,  H01L2224/81013 ,  H01L2224/81022 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81825 ,  H01L2224/81948 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83022 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2224/83948 ,  H01L2224/9202 ,  H01L2224/92147 ,  H01L2224/95 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/16235 ,  H01L2924/351 ,  H01L2924/00015 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A substrate bonding method comprises the following steps. Firstly, a first substrate and a second substrate are provided, wherein a surface of the first substrate is covered by a first Ag layer and a surface of the second substrate is covered by a second Ag layer and a metallic layer from bottom to top, wherein the metallic layer comprises a first Sn layer. Secondly, a bonding process is performed by aligning the first and second substrates followed by bringing the metallic layer into contact with the first Ag layer followed by applying a load while heating to a predetermined temperature in order to form Ag3Sn intermetallic compounds. Finally, cool down and remove the load to complete the bonding process.

摘要翻译： 基板接合方法包括以下步骤。 首先，提供第一基板和第二基板，其中第一基板的表面被第一Ag层覆盖，并且第二基板的表面被从第二Ag层和从底部到顶部的金属层覆盖，其中 金属层包括第一Sn层。 其次，通过使第一和第二基板对准，然后使金属层与第一Ag层接触，然后在加热至预定温度的同时施加负载以形成Ag 3 Sn金属间化合物，进行接合工艺。 最后，冷却并清除负载以完成粘合过程。

公开(公告)号：US20120153496A1

公开(公告)日：2012-06-21

申请号：US13031861

申请日：2011-02-22

申请人： Jae-Hak Lee ,  Chang-Woo Lee ,  Joon-Yub Song ,  Tae-Ho Ha

发明人： Jae-Hak Lee ,  Chang-Woo Lee ,  Joon-Yub Song ,  Tae-Ho Ha

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/13009 ,  H01L2224/24011 ,  H01L2224/24146 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/27416 ,  H01L2224/27452 ,  H01L2224/2761 ,  H01L2224/27616 ,  H01L2224/29187 ,  H01L2224/821 ,  H01L2224/82101 ,  H01L2224/82143 ,  H01L2224/83001 ,  H01L2224/83013 ,  H01L2224/83143 ,  H01L2224/83192 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92244 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2224/83 ,  H01L2924/01074 ,  H01L2924/01013

摘要： The present invention relates to a through silicon via (TSV) for 3D packaging to integrate a semiconductor device and a method for manufacturing the same, and more particularly, to a through silicon via (TSV) for 3D packaging of a semiconductor device that is capable of improving production efficiency, having very high electric conductivity, and minimizing electrical signal delay, without using a carrier wafer by self-aligning substrates in a low temperature state and sequentially bonding a plurality of semiconductor dies (or semiconductor chips), and a method of manufacturing the same.

摘要翻译： 本发明涉及一种用于3D封装的硅通孔（TSV），用于集成半导体器件及其制造方法，更具体地，涉及一种用于半导体器件的3D封装的贯穿硅通孔（TSV），其具有能够 提高生产效率，具有非常高的导电性和最小化电信号延迟，而不用通过在低温状态下自对准衬底并顺序地接合多个半导体管芯（或半导体芯片）而使用载体晶片，以及 制造相同。

公开(公告)号：US20110045638A1

公开(公告)日：2011-02-24

申请号：US12516109

申请日：2007-11-28

申请人： Yorinobu Takamatsu ,  Rina Mawatari ,  Yuka Uchida ,  Masaru Shinohara

发明人： Yorinobu Takamatsu ,  Rina Mawatari ,  Yuka Uchida ,  Masaru Shinohara

IPC分类号： H01L21/56 ,  C09J7/02 ,  B32B27/30 ,  H01L21/60

CPC分类号： H01L24/83 ,  C09J7/22 ,  C09J7/38 ,  C09J2203/326 ,  C09J2433/00 ,  H01L21/6835 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2221/68345 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83005 ,  H01L2224/83013 ,  H01L2224/83855 ,  H01L2224/85005 ,  H01L2224/85013 ,  H01L2224/85048 ,  H01L2224/92247 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15747 ,  H01L2924/181 ,  Y10T428/2891 ,  H01L2924/00014 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention provides a masking tape which can be easily released without leaving an adhesive residue. A heat resistant masking tape, comprising (1) a heat resistant backing film layer, and (2) a pressure-sensitive adhesive layer disposed on the heat resistant backing film layer, wherein the adhesive layer comprises a polymer having a solubility parameter (SP) value at 25° C. of 20 MPa0.5 or less.

摘要翻译： 本发明提供一种能够容易地释放而不留下粘合剂残留物的遮蔽胶带。 一种耐热遮蔽胶带，包括（1）耐热后膜层和（2）设置在所述耐热背衬膜层上的压敏粘合剂层，其中所述粘合剂层包含具有溶解度参数（SP）的聚合物， 25℃时的值为20MPa以上。

公开(公告)号：US20060097354A1

公开(公告)日：2006-05-11

申请号：US11268556

申请日：2005-11-08

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Takahito Suzuki ,  Masaaki Sakuta ,  Ichimatsu Abiko

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Takahito Suzuki ,  Masaaki Sakuta ,  Ichimatsu Abiko

IPC分类号： H01L29/12

CPC分类号： H01L24/83 ,  B41J2/45 ,  H01L24/29 ,  H01L24/32 ,  H01L27/153 ,  H01L2224/27444 ,  H01L2224/2747 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29114 ,  H01L2224/29117 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/32502 ,  H01L2224/83005 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/00

摘要： A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

公开(公告)号：US12068278B2

公开(公告)日：2024-08-20

申请号：US18148369

申请日：2022-12-29

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Cyprian Emeka Uzoh ,  Guilian Gao ,  Laura Wills Mirkarimi ,  Gaius Gillman Fountain, Jr.

IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/683 ,  H01L21/78 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/83 ,  H01L21/02076 ,  H01L21/3085 ,  H01L21/31116 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3185 ,  H01L25/0657 ,  H01L25/50 ,  H01L21/3065 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/83013 ,  H01L2224/83031 ,  H01L2224/83895 ,  H01L2224/83896

摘要： Representative implementations of techniques and methods include processing singulated dies in preparation for bonding. A plurality of semiconductor die components may be singulated from a wafer component, the semiconductor die components each having a substantially planar surface. Particles and shards of material may be removed from edges of the plurality of semiconductor die component. Additionally, one or more of the plurality of semiconductor die components may be bonded to a prepared bonding surface, via the substantially planar surface.

公开(公告)号：US11855064B2

公开(公告)日：2023-12-26

申请号：US17344100

申请日：2021-06-10

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Cyprian Emeka Uzoh ,  Laura Wills Mirkarimi ,  Guilian Gao ,  Gaius Gillman Fountain, Jr.

IPC分类号： H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L21/78 ,  H01L21/683 ,  H01L21/18

CPC分类号： H01L25/50 ,  H01L21/187 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/30 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/83011 ,  H01L2224/83013

摘要： Representative techniques provide process steps for forming a microelectronic assembly, including preparing microelectronic components such as dies, wafers, substrates, and the like, for bonding. One or more surfaces of the microelectronic components are formed and prepared as bonding surfaces. The microelectronic components are stacked and bonded without adhesive at the prepared bonding surfaces.

公开(公告)号：US09673167B2

公开(公告)日：2017-06-06

申请号：US14416297

申请日：2012-07-26

申请人： Markus Wimplinger

发明人： Markus Wimplinger

IPC分类号： H01L23/00 ,  H01L31/18 ,  B32B37/24 ,  B32B38/00 ,  C23C14/08 ,  C23C16/40

CPC分类号： H01L24/83 ,  B32B37/24 ,  B32B38/0008 ,  B32B2037/243 ,  B32B2037/246 ,  B32B2457/14 ,  C23C14/08 ,  C23C14/081 ,  C23C14/086 ,  C23C16/40 ,  C23C16/403 ,  C23C16/407 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L31/18 ,  H01L2224/2741 ,  H01L2224/27418 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/278 ,  H01L2224/27848 ,  H01L2224/2908 ,  H01L2224/29187 ,  H01L2224/29287 ,  H01L2224/29394 ,  H01L2224/29395 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/32501 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/83001 ,  H01L2224/83002 ,  H01L2224/83011 ,  H01L2224/83012 ,  H01L2224/83013 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/8322 ,  H01L2224/8383 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/053 ,  H01L2924/12042 ,  H01L2924/20102 ,  H01L2924/0549 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0531 ,  H01L2924/01001 ,  H01L2924/01008 ,  H01L2924/00

摘要： This invention relates to a method for bonding of a first contact area of a first at least largely transparent substrate to a second contact area of a second at least largely transparent substrate, on at least one of the contact areas an oxide being used for bonding, from which an at least largely transparent interconnection layer is formed with an electrical conductivity of at least 10e1 S/cm2 (measurement: four point method, relative to temperature of 300K) and an optical transmittance greater than 0.8 (for a wavelength range from 400 nm to 1500 nm) on the first and second contact area.

公开(公告)号：US20170103964A1

公开(公告)日：2017-04-13

申请号：US15387389

申请日：2016-12-21

申请人： X-Celeprint Limited

发明人： Christopher Andrew Bower ,  Matthew Meitl ,  David Gomez ,  Salvatore Bonafede ,  David Kneeburg

IPC分类号： H01L23/00 ,  B41K3/04 ,  B41F16/00

CPC分类号： B41F16/00 ,  B25J15/00 ,  B41F16/0046 ,  B41F16/006 ,  B41F16/0073 ,  B41K3/04 ,  B41K3/12 ,  H01L21/3065 ,  H01L21/52 ,  H01L21/565 ,  H01L21/568 ,  H01L21/67103 ,  H01L21/683 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3171 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L25/50 ,  H01L31/1892 ,  H01L2221/68318 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/75315 ,  H01L2224/7598 ,  H01L2224/83001 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83024 ,  H01L2224/832 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2924/10253 ,  H01L2924/1032 ,  H01L2924/10328 ,  H01L2924/10329 ,  H01L2924/10332 ,  H01L2924/10335 ,  H01L2924/10336 ,  H01L2924/10337 ,  H01L2924/10338 ,  H01L2924/1034

摘要： In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.