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公开(公告)号：US09508669B2
公开(公告)日：2016-11-29
申请号：US15202749
申请日：2016-07-06
IPC分类号： H01L29/737 , H01L23/00 , H01L29/66 , H01L29/08
CPC分类号： H01L24/13 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L29/0692 , H01L29/0817 , H01L29/20 , H01L29/205 , H01L29/41708 , H01L29/66234 , H01L29/66242 , H01L29/66272 , H01L29/6631 , H01L29/66318 , H01L29/732 , H01L29/737 , H01L29/7371 , H01L29/7375 , H01L29/7378 , H01L2224/02331 , H01L2224/0235 , H01L2224/02372 , H01L2224/02373 , H01L2224/0239 , H01L2224/024 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05024 , H01L2224/05147 , H01L2224/05166 , H01L2224/05558 , H01L2224/05559 , H01L2224/05569 , H01L2224/05572 , H01L2224/05666 , H01L2224/1134 , H01L2224/13013 , H01L2224/13022 , H01L2224/13024 , H01L2224/13026 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13563 , H01L2224/13611 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2924/00012 , H01L2924/01029 , H01L2924/07025 , H01L2924/10329 , H01L2924/10337 , H01L2924/10338 , H01L2924/13051 , H01L2924/13055 , H01L2924/1423 , H01L2924/351 , H01L2924/01079 , H01L2924/00014 , H01L2924/014
摘要： A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.
摘要翻译： 一种包括双极晶体管的半导体器件，其中与发射极层电连接的柱凸起和第二布线彼此接触的第三开口在发射极层的纵向方向上偏离 第三开口直接位于发射极层上方的位置。 第三开口相对于发射极层布置成使得发射极层的纵向方向上的发射极层的端部和第三开口的开口的边缘基本上彼此对准。
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2.发明授权公开(公告)号：US07214557B2
公开(公告)日：2007-05-08
申请号：US10569166
申请日：2003-10-24
申请人： Josuke Nakata
发明人： Josuke Nakata
IPC分类号： H01L21/00
CPC分类号： H01L25/0753 , F21K9/00 , H01L24/45 , H01L24/85 , H01L31/02008 , H01L31/035281 , H01L31/0508 , H01L31/068 , H01L31/1804 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/62 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/4516 , H01L2224/45565 , H01L2224/45644 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01047 , H01L2924/01322 , H01L2924/10252 , H01L2924/10328 , H01L2924/10329 , H01L2924/10335 , H01L2924/10337 , H01L2924/10338 , H01L2924/10346 , H01L2924/12036 , H01L2924/12041 , H01L2924/12043 , Y02E10/547 , Y02P70/521 , H01L2924/00 , H01L2224/45147 , H01L2924/01014 , H01L2924/01032 , H01L2924/0105 , H01L2224/48 , H01L2924/0002 , H01L2924/2076 , H01L2924/2075 , H01L2924/00015 , H01L2924/01028 , H01L2924/013 , H01L2924/00013 , H01L2924/01004 , H01L2924/01049
摘要： A light receiving or light emitting modular sheet having a plurality of spherical elements arranged in matrix. It is constituted only of acceptable spherical elements and photoelectric conversion efficiency thereof is enhanced.The light receiving modular sheet (1) comprises a plurality of spherical solar cell elements (2) arranged in matrix, a meshed member (3), and a sheet member (4). Each solar cell element (2) comprises a spherical pn junction (13), and positive and negative electrodes (14, 15) formed oppositely while sandwiching the center of the solar cell element (2) and being connected with respective electrodes of the pn junction (13). The meshed member (3) has a plurality of conductive wires (20, 21) arranged in parallel in order to connect the plurality of spherical solar cell elements (2) in each column electrically in parallel, and insulating tensile wires (22) arranged between the rows of solar cell elements (2) to cross the conductive wires (20, 21) perpendicularly while being woven in a meshed form to secure the plurality of conductive wires (20, 21).
摘要翻译： 一种光接收或发光模块片，其具有排列成矩阵的多个球形元件。 它仅由可接受的球形元件构成，光电转换效率提高。 光接收模块片（1）包括多个布置成矩阵的球形太阳能电池元件（2），网状构件（3）和片状构件（4）。 每个太阳能电池元件（2）包括球形pn结（13），并且正和负电极（14,15）相对地形成，同时夹着太阳能电池元件（2）的中心并与pn结的各个电极连接 （13）。 网状构件（3）具有平行布置的多个导线（20,21），以便将每个列中的多个球形太阳能电池元件（2）并联电连接，绝缘拉力线（22）布置在 太阳能电池元件（2）的行以垂直方式横切导电线（20,21），同时以网状形式编织以固定多根导线（20,21）。
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公开(公告)号：US20240145413A1
公开(公告)日：2024-05-02
申请号：US18244443
申请日：2023-09-11
发明人： Makoto NISHIHARA
IPC分类号： H01L23/66 , H01L21/8252 , H01L23/00 , H01L23/495 , H01L25/16 , H01L27/06
CPC分类号： H01L23/66 , H01L21/8252 , H01L23/49589 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/165 , H01L27/0688 , H01L2223/6655 , H01L2224/05541 , H01L2224/05553 , H01L2224/05558 , H01L2224/05644 , H01L2224/0603 , H01L2224/06181 , H01L2224/32245 , H01L2224/32265 , H01L2224/3303 , H01L2224/33181 , H01L2224/45144 , H01L2224/48091 , H01L2224/48101 , H01L2224/48106 , H01L2224/4813 , H01L2224/48175 , H01L2224/48195 , H01L2224/48265 , H01L2224/49052 , H01L2224/49109 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73215 , H01L2224/73265 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10336 , H01L2924/10337 , H01L2924/10344 , H01L2924/10346 , H01L2924/13064 , H01L2924/19041 , H01L2924/19104 , H01L2924/19105 , H01L2924/30107
摘要： A semiconductor device includes a semiconductor chip including a substrate, a transistor provided on an upper surface of the substrate and having an input electrode to which a high frequency signal is input, an output electrode from which the high frequency signal is output, and a reference potential electrode to which a reference potential is supplied, and a metal pattern provided on the upper surface of the substrate and electrically connected to the reference potential electrode, a first capacitor including a first lower electrode provided on the metal pattern and electrically connected to the metal pattern, a first dielectric layer provided on the first lower electrode, and a first upper electrode provided on the first dielectric layer, and a first bonding wire electrically connecting the first upper electrode and a first electrode which is any one of the input electrode and the output electrode.
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公开(公告)号：US20170103964A1
公开(公告)日：2017-04-13
申请号：US15387389
申请日：2016-12-21
申请人： X-Celeprint Limited
CPC分类号： B41F16/00 , B25J15/00 , B41F16/0046 , B41F16/006 , B41F16/0073 , B41K3/04 , B41K3/12 , H01L21/3065 , H01L21/52 , H01L21/565 , H01L21/568 , H01L21/67103 , H01L21/683 , H01L21/6835 , H01L23/293 , H01L23/3171 , H01L24/75 , H01L24/83 , H01L24/97 , H01L25/50 , H01L31/1892 , H01L2221/68318 , H01L2221/68354 , H01L2221/68368 , H01L2221/68377 , H01L2221/68381 , H01L2224/32225 , H01L2224/32245 , H01L2224/75315 , H01L2224/7598 , H01L2224/83001 , H01L2224/83011 , H01L2224/83013 , H01L2224/83024 , H01L2224/832 , H01L2224/83894 , H01L2224/83895 , H01L2924/10253 , H01L2924/1032 , H01L2924/10328 , H01L2924/10329 , H01L2924/10332 , H01L2924/10335 , H01L2924/10336 , H01L2924/10337 , H01L2924/10338 , H01L2924/1034
摘要： In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.
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公开(公告)号：US20170063236A1
公开(公告)日：2017-03-02
申请号：US15352914
申请日：2016-11-16
发明人： Alan ROTH , Eric SOENEN , Chaohao WANG
CPC分类号： H02M3/158 , H01L23/5226 , H01L24/05 , H01L24/29 , H01L24/45 , H01L24/48 , H01L25/16 , H01L28/10 , H01L28/40 , H01L2224/05025 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/29025 , H01L2224/2919 , H01L2224/32265 , H01L2224/4502 , H01L2224/45111 , H01L2224/45116 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48265 , H01L2924/00014 , H01L2924/01047 , H01L2924/0479 , H01L2924/048 , H01L2924/04941 , H01L2924/04953 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10335 , H01L2924/10337 , H01L2924/10339 , H01L2924/10342 , H01L2924/10351 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/14252 , H01L2924/1427 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H05K1/111 , H05K1/181 , H05K1/185 , H05K2201/10015 , H05K2201/10022 , H05K2201/1003 , H05K2201/10166 , Y02P70/611 , H01L2224/45099 , H01L2924/00
摘要： A converter includes a plurality of active circuitry elements over a substrate. The converter further includes a passivation structure over the plurality of active circuitry elements, the passivation structure having at least one opening that is configured to expose at least one electrical pad of each active circuitry element. The converter further includes a plurality of passive electrical components over the passivation structure, wherein each passive electrical component is selectively connectable with at least one other passive electrical component, and a first side of each passive electrical component is electrically coupled to an electrical pad of each of at least two active circuitry elements. The converter further includes a plurality of electrical connection structures, wherein a first electrical connection structure electrically couples an electrical pad of a first active circuitry element to a corresponding passive electrical component, and the first electrical connection structure is completely within the passivation structure.
摘要翻译： A转换器包括在衬底上的多个有源电路元件。 该转换器还包括多个有源电路元件上的钝化结构，该钝化结构具有至少一个开口，其被配置为暴露每个有源电路元件的至少一个电焊盘。 转换器还包括钝化结构上的多个无源电部件，其中每个无源电部件可选择地与至少一个其它无源电部件连接，并且每个无源电部件的第一侧电耦合到每个无源电部件的电焊盘 至少两个有源电路元件。 转换器还包括多个电连接结构，其中第一电连接结构将第一有源电路元件的电焊盘电耦合到相应的无源电组件，并且第一电连接结构完全在钝化结构内。
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公开(公告)号：US09434150B2
公开(公告)日：2016-09-06
申请号：US14803997
申请日：2015-07-20
申请人： X-Celeprint Limited
IPC分类号： H01L21/30 , B41F16/00 , H01L21/3065 , H01L21/52 , H01L21/56 , H01L23/29 , B41K3/12 , H01L21/683 , H01L21/67 , H01L23/00 , B25J15/00 , H01L23/31 , H01L25/00 , H01L31/18
CPC分类号： B41F16/00 , B25J15/00 , B41F16/0046 , B41F16/006 , B41F16/0073 , B41K3/04 , B41K3/12 , H01L21/3065 , H01L21/52 , H01L21/565 , H01L21/568 , H01L21/67103 , H01L21/683 , H01L21/6835 , H01L23/293 , H01L23/3171 , H01L24/75 , H01L24/83 , H01L24/97 , H01L25/50 , H01L31/1892 , H01L2221/68318 , H01L2221/68354 , H01L2221/68368 , H01L2221/68377 , H01L2221/68381 , H01L2224/32225 , H01L2224/32245 , H01L2224/75315 , H01L2224/7598 , H01L2224/83001 , H01L2224/83011 , H01L2224/83013 , H01L2224/83024 , H01L2224/832 , H01L2224/83894 , H01L2224/83895 , H01L2924/10253 , H01L2924/1032 , H01L2924/10328 , H01L2924/10329 , H01L2924/10332 , H01L2924/10335 , H01L2924/10336 , H01L2924/10337 , H01L2924/10338 , H01L2924/1034
摘要： In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.
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公开(公告)号：US09153573B2
公开(公告)日：2015-10-06
申请号：US13904100
申请日：2013-05-29
发明人： Fumio Yamada
IPC分类号： H03F3/16 , H01L27/06 , H01L25/00 , H03F3/21 , H03F1/02 , H03F3/193 , H03F3/24 , H01L25/065 , H01L25/18 , H01L29/66 , H01L29/778 , H01L29/20 , H01L23/00 , H01L21/8252 , H01L27/085
CPC分类号： H01L27/0605 , H01L21/8252 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L27/085 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L2224/0401 , H01L2224/04042 , H01L2224/0557 , H01L2224/06181 , H01L2224/131 , H01L2224/16145 , H01L2224/48091 , H01L2224/48145 , H01L2224/73265 , H01L2225/06506 , H01L2225/06513 , H01L2225/06541 , H01L2225/06568 , H01L2225/06589 , H01L2924/00014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10336 , H01L2924/10337 , H01L2924/10344 , H01L2924/12032 , H01L2924/13052 , H01L2924/1306 , H01L2924/13064 , H03F1/0272 , H03F3/193 , H03F3/21 , H03F3/211 , H03F3/24 , H03F2200/408 , H03F2200/411 , H01L2924/014 , H01L2224/05552 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor apparatus that includes two types of transistors is disclosed. A first semiconductor chip includes the first semiconductor device of a transistor type of GaAs-HEMT, while, a second semiconductor chip includes a second semiconductor device of a transistor type GaN-HEMT. The second semiconductor device is formed on a SiC substrate, and the first semiconductor chip is mounted in an inactive region of the SiC substrate.
摘要翻译： 公开了一种包括两种晶体管的半导体装置。 第一半导体芯片包括晶体管型GaAs-HEMT的第一半导体器件，而第二半导体芯片包括晶体管型GaN-HEMT的第二半导体器件。 第二半导体器件形成在SiC衬底上，第一半导体芯片安装在SiC衬底的无效区域中。
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公开(公告)号：US20130321082A1
公开(公告)日：2013-12-05
申请号：US13904100
申请日：2013-05-29
发明人： Fumio YAMADA
CPC分类号： H01L27/0605 , H01L21/8252 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L27/085 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L2224/0401 , H01L2224/04042 , H01L2224/0557 , H01L2224/06181 , H01L2224/131 , H01L2224/16145 , H01L2224/48091 , H01L2224/48145 , H01L2224/73265 , H01L2225/06506 , H01L2225/06513 , H01L2225/06541 , H01L2225/06568 , H01L2225/06589 , H01L2924/00014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10336 , H01L2924/10337 , H01L2924/10344 , H01L2924/12032 , H01L2924/13052 , H01L2924/1306 , H01L2924/13064 , H03F1/0272 , H03F3/193 , H03F3/21 , H03F3/211 , H03F3/24 , H03F2200/408 , H03F2200/411 , H01L2924/014 , H01L2224/05552 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor apparatus that includes two types of transistors is disclosed. The first semiconductor chip includes the first semiconductor device of a type of GaAs-HEMT, while, the second semiconductor chip includes the second semiconductor device of another type of GaN-HEMT. The second semiconductor device is formed in a SiC substrate, and the first semiconductor chip is mounted in an inactive region of the SiC substrate.
摘要翻译： 公开了一种包括两种晶体管的半导体装置。 第一半导体芯片包括一种GaAs-HEMT的第一半导体器件，而第二半导体芯片包括另一类型的GaN-HEMT的第二半导体器件。 第二半导体器件形成在SiC衬底中，并且第一半导体芯片安装在SiC衬底的无效区域中。
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9.发明申请AUGMENTED CAPACITOR STRUCTURE FOR HIGH QUALITY (Q)-FACTOR RADIO FREQUENCY (RF) APPLICATIONS 有权高质量（Q）因子无线电频率（RF）应用的增益电容结构公开(公告)号：US20170077214A1
公开(公告)日：2017-03-16
申请号：US14853967
申请日：2015-09-14
发明人： Niranjan Sunil MUDAKATTE , Daeik Daniel KIM , David Francis BERDY , Changhan Hobie YUN , Je-Hsiung Jeffrey LAN , Chengjie ZUO , Mario Francisco VELEZ , Robert Paul MIKULKA , Jonghae KIM
IPC分类号： H01L49/02
CPC分类号： H01L28/60 , H01L23/5223 , H01L24/13 , H01L27/0805 , H01L28/87 , H01L28/91 , H01L2224/0401 , H01L2224/04042 , H01L2224/13109 , H01L2224/94 , H01L2924/10329 , H01L2924/1033 , H01L2924/10337 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2224/03
摘要： An augmented capacitor structure includes a substrate and a first capacitor plate of a first conductive layer on the substrate. The augmented capacitor structure also includes an insulator layer on a surface of the first capacitor plate facing away from the substrate and a second capacitor plate. The second capacitor plate includes a second conductive layer on the insulator layer, supported by the first capacitor plate as a first capacitor. A second capacitor electrically is coupled in series with the first capacitor. The first capacitor plate is shared by the first capacitor and the second capacitor as a shared first capacitor plate. An extended first capacitor plate includes a first dummy portion of a third conductive layer and a first dummy via bar extending along the surface of the shared first capacitor plate. The first dummy portion extends along and is supported by the first dummy via bar.
摘要翻译： 增强电容器结构包括基板和在基板上的第一导电层的第一电容器板。 增强电容器结构还包括在第一电容器板的远离衬底的表面上的绝缘体层和第二电容器板。 第二电容器板包括在绝缘体层上的第二导电层，由第一电容器板作为第一电容器支撑。 与第一电容器串联耦合的第二电容器。 第一电容器板由第一电容器和第二电容器共享作为共用的第一电容器板。 扩展的第一电容器板包括第三导电层的第一虚拟部分和沿着共享的第一电容器板的表面延伸的第一虚设通孔条。 第一虚拟部分沿第一虚拟通孔条延伸并由第一虚拟通孔支撑。
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10.发明授权公开(公告)号：US09293409B2
公开(公告)日：2016-03-22
申请号：US14023493
申请日：2013-09-11
发明人： Thomas Fischer , Carsten Ahrens , Damian Sojka , Andre Schmenn
IPC分类号： H01L21/48 , H01L23/522 , H01L21/768 , H01L23/00 , H01L21/784 , H01L23/482
CPC分类号： H01L27/0248 , H01L21/288 , H01L21/7685 , H01L21/78 , H01L21/784 , H01L23/4827 , H01L23/495 , H01L23/522 , H01L23/544 , H01L23/562 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L24/94 , H01L24/98 , H01L2223/5446 , H01L2224/04026 , H01L2224/05082 , H01L2224/05124 , H01L2224/05166 , H01L2224/05647 , H01L2224/0569 , H01L2224/2746 , H01L2224/2747 , H01L2224/291 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2916 , H01L2224/29164 , H01L2224/29166 , H01L2224/2919 , H01L2224/32245 , H01L2224/48247 , H01L2224/94 , H01L2924/00014 , H01L2924/01022 , H01L2924/01026 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/10252 , H01L2924/10253 , H01L2924/10272 , H01L2924/1032 , H01L2924/10329 , H01L2924/10335 , H01L2924/10337 , H01L2924/1037 , H01L2924/12042 , H01L2924/1431 , H01L2224/27 , H01L2924/0781 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.
摘要翻译： 根据各种实施例，半导体器件的制造方法可以包括提供半导体工件，其包括在半导体工件的第一侧的器件区域，其中半导体工件的机械稳定性不足以抵抗至少一个后端工艺，而没有 损坏，并且在半导体工件的与半导体工件的第一侧相对的第二侧上沉积至少一个导电层，其中至少一个导电层增加半导体工件的机械稳定性，以足以抵抗至少一个 后端程序无损坏。
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