发明公开
- 专利标题: SEMICONDUCTOR DEVICE
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申请号: US18244443申请日: 2023-09-11
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公开(公告)号: US20240145413A1公开(公告)日: 2024-05-02
- 发明人: Makoto NISHIHARA
- 申请人: Sumitomo Electric Device Innovations, Inc.
- 申请人地址: JP Yokohama-shi
- 专利权人: Sumitomo Electric Device Innovations, Inc.
- 当前专利权人: Sumitomo Electric Device Innovations, Inc.
- 当前专利权人地址: JP Yokohama-shi
- 优先权: JP 22171600 2022.10.26
- 主分类号: H01L23/66
- IPC分类号: H01L23/66 ; H01L21/8252 ; H01L23/00 ; H01L23/495 ; H01L25/16 ; H01L27/06
摘要:
A semiconductor device includes a semiconductor chip including a substrate, a transistor provided on an upper surface of the substrate and having an input electrode to which a high frequency signal is input, an output electrode from which the high frequency signal is output, and a reference potential electrode to which a reference potential is supplied, and a metal pattern provided on the upper surface of the substrate and electrically connected to the reference potential electrode, a first capacitor including a first lower electrode provided on the metal pattern and electrically connected to the metal pattern, a first dielectric layer provided on the first lower electrode, and a first upper electrode provided on the first dielectric layer, and a first bonding wire electrically connecting the first upper electrode and a first electrode which is any one of the input electrode and the output electrode.
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