公开(公告)号：US12062716B2

公开(公告)日：2024-08-13

申请号：US18482025

申请日：2023-10-06

申请人： Ancora Semiconductors Inc.

发明人： Li-Fan Lin ,  Chun-Chieh Yang ,  Ying-Chen Liu

IPC分类号： H01L29/778 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

CPC分类号： H01L29/7787 ,  H01L23/3171 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/535 ,  H01L24/06 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/7786 ,  H01L24/48 ,  H01L29/42376 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/13064

摘要： A semiconductor device includes an active layer having first and second active regions, first and second source electrodes, first and second drain electrodes, first and second gate electrodes, a first source metal layer, first and second drain metal layers, and a source pad electrically connected to the first source metal layer. The second drain metal layer is electrically connected to the second drain electrode and the first source metal layer. A projection of the second drain metal layer on the active layer forms a drain metal layer region. An projection of the source pad on the active layer forms a source pad region. An area of an overlapping region between the source pad region and the drain metal layer region is smaller than or equal to 40% of an area of the drain metal layer region.

公开(公告)号：US12062651B2

公开(公告)日：2024-08-13

申请号：US17468252

申请日：2021-09-07

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Yasuhiro Isobe ,  Hung Hung ,  Akira Yoshioka ,  Toru Sugiyama ,  Hitoshi Kobayashi ,  Tetsuya Ohno ,  Masaaki Iwai ,  Naonori Hosokawa ,  Masaaki Onomura

IPC分类号： H01L25/18 ,  H01L25/07 ,  H01L25/16 ,  H01L29/778 ,  H03K17/687 ,  H01L23/00

CPC分类号： H01L25/18 ,  H01L25/074 ,  H01L25/16 ,  H01L29/778 ,  H03K17/6871 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/33181 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/13064 ,  H01L2924/13091

摘要： A semiconductor device according to an embodiment includes: a first nitride semiconductor layer having a first surface and a second surface; a first source electrode provided on the first surface; a first drain electrode provided on the first surface; a first gate electrode provided on the first surface between the first source electrode and the first drain electrode; a second nitride semiconductor layer having a third surface and a fourth surface, the third surface being provided on the second surface and facing the second surface, and the second nitride semiconductor layer having a smaller band gap than the first nitride semiconductor layer; and a first semiconductor device having a fifth surface provided on the fourth surface and facing the fourth surface with a size equal to or smaller than a size of the fourth surface, the first semiconductor device including a first semiconductor material having a smaller band gap than the second nitride semiconductor layer.

公开(公告)号：US20190006504A1

公开(公告)日：2019-01-03

申请号：US16041848

申请日：2018-07-23

申请人： DELTA ELECTRONICS, INC.

发明人： Li-Fan LIN ,  Chun-Chieh YANG ,  Wen-Chia LIAO ,  Ching-Chuan SHIUE ,  Shih-Peng CHEN

IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L23/495 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L23/00 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423 ,  H01L23/31

CPC分类号： H01L29/7787 ,  H01L23/3171 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/535 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/13064 ,  H01L2924/00 ,  H01L2924/206

摘要： A semiconductor device including an active layer made of III-V group semiconductors, a source electrode and a drain electrode disposed on the active layer, a gate electrode disposed on or above the active layer and between the source electrode and the drain electrode, an interlayer dielectric covering the source electrode, the drain electrode, and the gate electrode and having a plurality of inter-gate via holes. The semiconductor device further includes an inter-source layer, an inter-drain layer, and an inter-gate layer disposed on the interlayer dielectric. The semiconductor device further includes an inter-gate plug filled in the inter-gate via hole and electrically connected to the gate electrode and the inter-gate layer, and a gate field plate being separated from the gate electrode and electrically connected to the gate electrode through the inter-gate layer.

公开(公告)号：US20180151404A1

公开(公告)日：2018-05-31

申请号：US15570361

申请日：2016-05-11

申请人： RFHIC Corporation

发明人： Daniel FRANCIS

IPC分类号： H01L21/683 ,  H01L23/373 ,  H01L21/762 ,  H01L21/02 ,  H01L23/00

CPC分类号： H01L21/6835 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02527 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/7624 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/83 ,  H01L24/98 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/29193 ,  H01L2224/83052 ,  H01L2224/83192 ,  H01L2224/83224 ,  H01L2924/01014 ,  H01L2924/10272 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10344

摘要： A method of fabricating a semiconductor-on-diamond composite substrate, the method comprising: (i) starting with a native semiconductor wafer comprising a native silicon carbidesubstrate on which a compound semiconductor is disposed; (ii) bonding a silicon carbide carrier substrate to the compound semiconductor; (iii) removing the native silicon carbide substrate; (iv) forming a nucleation layer over the compound semiconductor; (v) growing polycrystalline chemical vapour deposited (CVD) diamond on the nucleation layer to form a composite diamond-compound semiconductor-silicon carbide wafer, and (vi) removing the silicon carbide carrier substrate y laser lift-off to achieve a layered structure comprising the compound semiconductor bonded to the polycrystalline CVD diamond via the nucleation layer, wherein in step (ii) the silicon carbide carrier substrate is bonded to the compound semiconductor via a laser absorption material which absorbs laser light, wherein the laser has a coherence length shorter than a thickness of the silicon carbide carrier substrate.

公开(公告)号：US20170330940A1

公开(公告)日：2017-11-16

申请号：US15588650

申请日：2017-05-07

申请人： RFHIC Corporation

发明人： Won Sang Lee

IPC分类号： H01L29/40 ,  H01L21/8252 ,  H01L23/48 ,  H01L29/778 ,  H01L23/00 ,  H01L21/768 ,  H01L29/205 ,  H01L29/20 ,  H01L27/06 ,  H01L29/66

CPC分类号： H01L29/404 ,  H01L21/76898 ,  H01L21/8252 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/94 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401 ,  H01L29/402 ,  H01L29/408 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/29009 ,  H01L2224/29022 ,  H01L2224/29025 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/13064 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05147 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05639

摘要： HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

公开(公告)号：US09721909B1

公开(公告)日：2017-08-01

申请号：US15012669

申请日：2016-02-01

申请人： LOCKHEED MARTIN CORPORATION

发明人： Mahesh Kumar

IPC分类号： H01L29/66 ,  H01L23/66 ,  H01L23/373 ,  H01L23/538 ,  H01L27/06 ,  H01L23/00

CPC分类号： H01L23/66 ,  H01L21/6835 ,  H01L21/8258 ,  H01L23/36 ,  H01L23/3738 ,  H01L23/4824 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/09 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0605 ,  H01L27/0629 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48157 ,  H01L2224/49175 ,  H01L2224/49176 ,  H01L2224/4918 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A radio frequency (RF) integrated circuit includes a first layer of semiconductor material in which a high electron mobility transfer (HEMT) device is formed. A semiconductor heat spreader substrate supports the first layer of semiconductor material. A pair of matching circuits are electrically connected to the HEMT device, wherein the pair of matching circuits are supported on a semiconductor substrate of a semiconductor material different than the semiconductor material of the first semiconductor heat spreader substrate. The first layer of semiconductor material and the first semiconductor heat spreader substrate have a thickness that is less than a second thickness of the semiconductor substrate supporting the pair of matching circuits.

公开(公告)号：US09627579B2

公开(公告)日：2017-04-18

申请号：US14940382

申请日：2015-11-13

申请人： Rayvio Corporation

发明人： Douglas A. Collins ,  Faisal Sudradjat ,  Robert C. Walker ,  Yitao Liao

IPC分类号： H01L33/20 ,  H01L33/14 ,  H01L33/22

CPC分类号： H01L31/03044 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/101 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L51/0081 ,  H01L51/0082 ,  H01L2924/10344

摘要： An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

公开(公告)号：US09514947B2

公开(公告)日：2016-12-06

申请号：US14747150

申请日：2015-06-23

申请人： Sensor Electronic Technology, Inc.

发明人： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur ,  Mikhail Gaevski

IPC分类号： H01L29/43 ,  H01L29/45 ,  H01L21/283 ,  H01L31/0224 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01L23/482 ,  H01L23/00 ,  H01L33/62

CPC分类号： H01L21/283 ,  H01L21/28264 ,  H01L21/28575 ,  H01L23/482 ,  H01L24/03 ,  H01L24/05 ,  H01L29/43 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/4966 ,  H01L31/022425 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2224/03848 ,  H01L2224/05019 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/051 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3013 ,  H01L2924/00

摘要： A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

摘要翻译： 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。

公开(公告)号：US20160079495A1

公开(公告)日：2016-03-17

申请号：US14940382

申请日：2015-11-13

申请人： Rayvio Corporation

发明人： Douglas A. COLLINS ,  Faisal SUDRADJAT ,  Robert C. WALKER ,  Yitao LIAO

IPC分类号： H01L33/58 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L31/03044 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/101 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L51/0081 ,  H01L51/0082 ,  H01L2924/10344

摘要： An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

摘要翻译： 该装置能够发射约200nm至365nm的电磁辐射的LED装置。 该器件包括衬底构件，该衬底构件选自蓝宝石，硅，石英，氮化镓，氮化镓铝等。 该器件具有覆盖衬底区域的有源区域，有源区域包括包含p-n结的发光空间区域，其特征在于在有源区域中提供的电流的电流拥挤特征。 发光空间区域的特征在于约1至10微米。 该装置包括空间设置的光学结构，其分开并分开发光空间区域，并且被配置为便于从有源区域的光提取。

公开(公告)号：US20160071969A1

公开(公告)日：2016-03-10

申请号：US14931009

申请日：2015-11-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hao CHIANG ,  Po-Chun LIU ,  Chi-Ming CHEN ,  Min-Chang CHING ,  Chung-Yi YU ,  Chia-Shiung TSAI ,  Ru-Liang LEE

IPC分类号： H01L29/778 ,  H01L23/31 ,  H01L29/205 ,  H01L29/20 ,  H01L29/45

CPC分类号： H01L29/7784 ,  H01L21/18 ,  H01L21/182 ,  H01L21/2258 ,  H01L21/3245 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L31/18 ,  H01L31/1848 ,  H01L33/002 ,  H01L33/0025 ,  H01L2924/0002 ,  H01L2924/10323 ,  H01L2924/10344 ,  H01L2924/00

摘要： A semiconductor device includes a substrate, a first layer over the substrate, a second layer over the first layer, and a third layer over the second layer. The third layer has a first portion and a second portion. The first portion of the third layer is separated from the second portion of the third layer. The semiconductor device also includes a first blended region beneath the first portion of the third layer. The first blended region includes aluminum atoms drawn from the first layer into at least the second layer. The semiconductor device further includes a second blended region beneath the second portion of the third layer. The second blended region includes aluminum atoms drawn from the first layer into at least the second layer. The semiconductor device also includes a source contact and a drain contact.

摘要翻译： 半导体器件包括衬底，衬底上的第一层，第一层上的第二层和第二层上的第三层。 第三层具有第一部分和第二部分。 第三层的第一部分与第三层的第二部分分离。 半导体器件还包括在第三层的第一部分下方的第一混合区域。 第一共混区域包括从第一层吸收到至少第二层的铝原子。 半导体器件还包括在第三层的第二部分下方的第二混合区域。 第二共混区域包括从第一层被抽吸到至少第二层的铝原子。 半导体器件还包括源极接触和漏极接触。