发明授权
- 专利标题： Chromium/titanium/aluminum-based semiconductor device contact fabrication
- 专利标题（中）： 铬/钛/铝基半导体器件接触制造
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申请号： US14747150申请日： 2015-06-23
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公开(公告)号： US09514947B2公开(公告)日： 2016-12-06
- 发明人: Remigijus Gaska , Xuhong Hu , Michael Shur , Mikhail Gaevski
- 申请人： Sensor Electronic Technology, Inc.
- 申请人地址： US SC Columbia
- 专利权人： Sensor Electronic Technology, Inc.
- 当前专利权人： Sensor Electronic Technology, Inc.
- 当前专利权人地址： US SC Columbia
- 代理机构： LaBatt, LLC
- 主分类号： H01L29/43
- IPC分类号： H01L29/43 ; H01L29/45 ; H01L21/283 ; H01L31/0224 ; H01L33/40 ; H01S5/042 ; H01S5/30 ; H01L23/482 ; H01L23/00 ; H01L33/62
摘要：
A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.
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