Invention Grant
- Patent Title: Chromium/titanium/aluminum-based semiconductor device contact fabrication
- Patent Title (中): 铬/钛/铝基半导体器件接触制造
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Application No.: US14747150Application Date: 2015-06-23
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Publication No.: US09514947B2Publication Date: 2016-12-06
- Inventor: Remigijus Gaska , Xuhong Hu , Michael Shur , Mikhail Gaevski
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L29/45 ; H01L21/283 ; H01L31/0224 ; H01L33/40 ; H01S5/042 ; H01S5/30 ; H01L23/482 ; H01L23/00 ; H01L33/62
Abstract:
A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.
Public/Granted literature
- US20150287602A1 Chromium/Titanium/Aluminum-based Semiconductor Device Contact Public/Granted day:2015-10-08
Information query
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