摘要:
A display device is provided. The display device includes a supporting film and a flexible substrate disposed on the supporting film. The display device also includes a driving layer disposed on the flexible substrate, and a conductive pad disposed on the driving layer. The display device further includes a light-emitting diode disposed on the conductive pad and electrically connected to the conductive pad, wherein the supporting film has a first hardness, the flexible substrate has a second hardness, and the first hardness is greater than or equal to the second hardness.
摘要:
An embodiment includes a semiconductor package comprising: a substrate; a first semiconductor chip mounted on the substrate; a second semiconductor chip mounted on a top surface of the first semiconductor chip; a connecting bump disposed between the first and second semiconductor chips to electrically connect the second semiconductor chip to the first semiconductor chip; and a first heat dissipation part disposed on the top surface of the first semiconductor chip between the first and second semiconductor chips and spaced apart from a bottom surface of the second semiconductor chip.
摘要:
A display device is provided. The display device includes a first conductive pad disposed on a substrate, wherein the first conductive pad has a contact area that is adjacent to the substrate. The display device also includes a first bonding material disposed on the first conductive pad, wherein the first bonding material has a sectional area that is parallel to a surface of the substrate. The display device further includes a second conductive pad disposed on the first bonding material, and a first illumination structure disposed on the second conductive pad, wherein the sectional area of the first bonding material is smaller than the contact area of the first conductive pad.
摘要:
A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.
摘要:
A package system includes a first substrate; and a second substrate electrically coupled with the first substrate. The package system further includes a semiconductor material between the first substrate and the second substrate. The semiconductor material includes a pad, and at least one guard ring surrounding the pad and spaced from the pad. The package system further includes a metallic material bonded to the semiconductor material, wherein the metallic material at least partially fills at least one opening in at least one of the first substrate or the second substrate.
摘要:
A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.
摘要:
Provided is a circuit substrate which can integrate circuit elements without degrading wiring characteristics, and a display device including the circuit substrate. The circuit substrate of the present invention includes a transistor substrate (10) which is a support substrate (1) having a transistor (20) and an external connection terminal (50) mounted thereon, and an external member (60) attached on the transistor substrate (10). The external member (60) is connected physically and electrically to the external connection terminal (50) through a conductive member (3), and the transistor (20) and the external connection terminal (50) are arranged side by side.
摘要:
A package system includes a first substrate and a second substrate. The second substrate is electrically coupled with the first substrate. The second substrate includes at least one first opening. At least one electrical bonding material is disposed between the first substrate and the second substrate. A first portion of the at least one electrical bonding material is at least partially filled in the at least one first opening.
摘要:
An optical coupling module includes a silicon photonic substrate, and an optical waveguide module. The silicon photonic substrate has a first surface and a first grating on the first surface for diffracting the light which passes through the grating. The optical waveguide module is disposed on the silicon photonic substrate, wherein the optical waveguide module includes an optical waveguide having an end disposed in corresponding to the first grating of the silicon photonic substrate. Otherwise, the optical waveguide module has a reflective surface coupled to the end of the optical waveguide and adapted to reflect the light emerging from or incident into the grating to form an optical path between the silicon photonic substrate and the optical waveguide for transmitting the light.
摘要:
A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.