摘要:
An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin insulating layer over a second surface of the conductive layer, wherein the conductive layer comprises a plurality of conductive particles and a nano fiber connecting the plurality of conductive particles to each other, each of the plurality of conductive particles comprising a plurality of needle-shaped protrusions having a conical shape, and wherein the first resin insulating layer and the second resin insulating layer comprise a same material and have different thicknesses.
摘要:
A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wiring to reduce irregularities caused by the wiring and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.
摘要:
An array substrate includes a driver, a glass substrate having a driver mounting section where the driver is mounted, an anisotropic conductive material that is interposed between the driver and driver mounting section so as to electrically connect both and that at least includes a binder made of a thermosetting resin and conductive particles in the binder, and a heat supply part provided on at least the driver mounting section of the glass substrate for supplying heat to the anisotropic conductive material.
摘要:
Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.
摘要:
Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.
摘要:
An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×105/d2 to 10.0×105/d2 (particles) per square millimeter (mm2) (where d is a diameter of the conductive particles in μm).
摘要翻译:各向异性导电膜包括导电性粘合剂层,其包含导电性粒子和绝缘性粒子,以及不含导电性粒子的绝缘性粘合剂层。 在各向异性导电膜中,导电性粘接剂层的导电性粒子和绝缘性粒子的总粒子密度为7.0×10 5 / d 2〜10 10×10 6(粒子)/平方毫米(mm 2)(d为直径 的导电粒子)。
摘要:
The present invention provides a film adhesive that can prevent a thermal effect to a semiconductor wafer and that can suppress warping of the semiconductor wafer; a dicing tape with a film adhesive; and a method of manufacturing a semiconductor device.The present invention relates to a film adhesive comprising a thermoplastic resin and electrically conductive particles, the film adhesive having an adhesion strength measured at 25° C. after the film adhesive is pasted to a mirror silicon wafer at 40° C. of 0.5 N/10 mm or more.
摘要:
A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based on the total weight of the composition in terms of solid content.
摘要:
A light-reflective conductive particle for an anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring board includes a core particle coated with a metal material and a light-reflecting layer formed from light-reflective inorganic particles having a refractive index of 1.52 or more on a surface of the core particle. Examples of the light-reflective inorganic particles having a refractive index of 1.52 or more include titanium oxide particles, zinc oxide particles, or aluminum oxide particles.
摘要:
A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.