Abstract:
Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.
Abstract:
The present invention relates to a conductive paste for bonding comprising 100 parts by weight of the metal powder, 5 to 20 parts by weight of a solvent, and 0.05 to 3 parts by weight of a polymer, wherein the polymer comprises a first polymer and a second polymer, wherein the molecular weight (Mw) of the first polymer is 5,000 to 95,000, and the molecular weight (Mw) of the second polymer is 100,000 to 300,000.
Abstract:
Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.
Abstract:
A novel chip scale diode package due to no containing outer lead pins is miniaturized like a chip scale appearance to promote dimensional accuracy so that the diode package is so suitably produced by automation equipment to get automated mass production; the produced diode package may contain one or more diode chips to increase versatile functions more useful in applications, such as produced as a SMT diode package or an array-type SMT diode, and the present diode package due to made of no lead-containing material conforms to requirements for environmental protection.
Abstract:
According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.
Abstract:
A sintering method is provided which allows components to be joined to each other in a stable way, wherein the processing temperature is less than 200° C. and stable contact points are produced, which have low porosity and also high electrical and thermal conductivity. The method for joining components includes (a) providing a sandwich arrangement having at least (a1) one component 1, (a2) one component 2, and (a3) a metal paste located between component 1 and component 2, and (b) sintering the sandwich arrangement. The metal paste contains (A) 75-90 weight percent of at least one metal present in the form of particles having a coating containing at least one organic compound, (B) 0-12 weight percent of at least one metal precursor, (C) 6-20 weight percent of at least one solvent, and (D) 0.1-15 weight percent of at least one sintering agent selected from the group comprising (i) organic peroxides, (ii) inorganic peroxides, and (iii) inorganic acids.
Abstract:
A sintering method is provided which allows components to be joined to each other in a stable way, wherein the processing temperature is less than 200° C. and stable contact points are produced, which have low porosity and also high electrical and thermal conductivity. The method for joining components includes (a) providing a sandwich arrangement having at least (a1) one component 1, (a2) one component 2, and (a3) a metal paste located between component 1 and component 2, and (b) sintering the sandwich arrangement. The metal paste contains (A) 75-90 weight percent of at least one metal present in the form of particles having a coating containing at least one organic compound, (B) 0-12 weight percent of at least one metal precursor, (C) 6-20 weight percent of at least one solvent, and (D) 0.1-15 weight percent of at least one sintering agent selected from the group comprising (i) organic peroxides, (ii) inorganic peroxides, and (iii) inorganic acids.
Abstract:
In accordance with an embodiment of the present invention, a semiconductor module includes a first semiconductor package having a first semiconductor die, which is disposed in a first encapsulant. An opening is disposed in the first encapsulant. A second semiconductor package including a second semiconductor die is disposed in a second encapsulant. The second semiconductor package is disposed at least partially within the opening in the first encapsulant.
Abstract:
A process for coating a semiconductor wafer with a coating composition comprises curing the coating with a pulsed UV light, thereby preventing delamination during reflow operations. In a particular embodiment, the coating composition comprises both epoxy and acrylate resins. The epoxy resin can be cured thermally; the acrylate resin is cured by UV irradiation.
Abstract:
In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.