公开(公告)号：US20250070734A1

公开(公告)日：2025-02-27

申请号：US18452896

申请日：2023-08-21

Applicant: Infineon Technologies AG

Inventor： Peter Unterkircher

IPC: H03F3/45

Abstract: A transimpedance amplifier includes: a first operational amplifier; a second operational amplifier; a first resistor coupled between a first input terminal of the first operational amplifier and a first output terminal of the first operational amplifier; a second resistor coupled between the first output terminal of the first operational amplifier and a first input terminal of the second operational amplifier; and a first capacitor-resistor-capacitor (CRC) network coupled between the first input terminal of the second operational amplifier and a first output terminal of the second operational amplifier, where the first CRC network is a first reconfigurable filter that is configured to function as a first-order high-pass filter or a second-order high-pass filter based on a first control signal applied to the first CRC network.

公开(公告)号：US20250070663A1

公开(公告)日：2025-02-27

申请号：US18453904

申请日：2023-08-22

Applicant: Infineon Technologies AG

Inventor： Fabio Ballarin ,  Andrea Cicognani

IPC: H02M3/142 ,  H02M1/00 ,  H02M1/32

Abstract: A switching mode power supply that supplies power to a load. The circuitry of the power supply of this disclosure may be configured to operate with a constant switching frequency over a range of input voltages and a range of load power demand. The circuitry of this disclosure may modulate a minimum on-time (Ton-min) for a duty cycle for an operating frequency of the circuit based on the magnitude of the input voltage. The circuitry may also operate in continuous conduction mode (CCM) or in discontinuous conduction mode (DCM) based on an operating region. The operating region is based on a combination of the demand from the load (Iout) and the input voltage (Vin). The circuitry of this disclosure may enter an operating region based on a first combination but exit the operating region under a second and different combination of Iout and Vin.

公开(公告)号：US20250069970A1

公开(公告)日：2025-02-27

申请号：US18945736

申请日：2024-11-13

Applicant: Infineon Technologies AG

Inventor： Isabelle Graf ,  Johannes Uhlig

IPC: H01L23/29 ,  H01L23/31 ,  H01L25/07

Abstract: A semiconductor module includes a power electronics carrier including a structured metallization layer disposed on an electrically insulating substrate, a power semiconductor die mounted on the power electronics carrier, a housing that surrounds an interior volume over the power electronics carrier, a volume of electrically insulating polymer material disposed within the interior volume, and a concentration of sacrificial particles dispersed within the volume of electrically insulating polymer, wherein the sacrificial particles are metal oxide particles.

公开(公告)号：US20250067839A1

公开(公告)日：2025-02-27

申请号：US18796091

申请日：2024-08-06

Applicant: Infineon Technologies AG

Inventor： Daniel Englisch ,  Christoph Jürgen Will

IPC: G01S7/35 ,  G01S13/62

Abstract: In accordance with an embodiment, a method includes: obtaining a magnitude of a frequency spectrum of a receive signal of the radar sensor, wherein the frequency spectrum comprises a first portion and a second portion within a frequency bandwidth divided into bins, and wherein the first and second portions are symmetrically positioned with respect to a center frequency; for at least one bin in the first portion, determining a bin threshold based on the magnitude of the frequency spectrum within one or more bins in the second portion; for at least one bin in the second portion, determining a bin threshold based on the magnitude of the frequency spectrum within one or more bins in the first portion; and detecting a target motion in response to the magnitude of the frequency spectrum exceeding the bin threshold in at least one bin within the frequency bandwidth.

公开(公告)号：US12237381B2

公开(公告)日：2025-02-25

申请号：US17680456

申请日：2022-02-25

Applicant: Infineon Technologies AG

Inventor： Alim Karmous

IPC: H01L29/417 ,  H01L27/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/739

Abstract: A power semiconductor device includes: a semiconductor body having a first surface and a mesa portion that includes a surface part of the first surface and a body region; at least two trenches extending from the first surface into the semiconductor body along a vertical direction, each trench including a trench electrode and trench insulator insulating the trench electrode from the semiconductor body, the mesa portion being laterally confined by the trenches in a first vertical cross-section along a first lateral direction; and a contact plug in contact with the body region. The contact plug and trench electrode of a first trench laterally overlap at least partially in the first vertical cross-section. A protection structure having a portion arranged within the first trench is arranged between the contact plug and trench electrode of the first trench. The protection structure may be an electrically insulation structure or a protective device structure.

公开(公告)号：US20250062680A1

公开(公告)日：2025-02-20

申请号：US18779343

申请日：2024-07-22

Applicant: Infineon Technologies AG

Inventor： Johannes ROSTEK ,  Karl Egil NORLING ,  Daniele MIATTON

IPC: H02M1/32 ,  H02M1/00 ,  H02M3/04 ,  H02M3/07

Abstract: Devices including a power transistor having a control terminal coupled to a control node are provided. A supply circuit is coupled to the control node comprising an output capacitor and configured to provide a supply voltage at the output capacitor to supply a further circuit.

公开(公告)号：US20250062170A1

公开(公告)日：2025-02-20

申请号：US18797721

申请日：2024-08-08

Applicant: Infineon Technologies AG

Inventor： Markus Wiesemann ,  Anita Herzer

IPC: H01L23/29 ,  H01L21/56 ,  H01L23/31

Abstract: A power semiconductor module arrangement includes: a substrate arranged in or forming a ground surface of a housing having sidewalls; at least one semiconductor body arranged on the substrate; a first layer partly filling the housing and completely covering the substrate and the at least one semiconductor body arranged thereon; and a second layer arranged adjacent to the first layer. The first layer is a liquid or gel-like layer. The second layer is a solid or gel-like layer. The first layer is arranged between the substrate and the second layer. The second layer is arranged distant from a top of the housing.

公开(公告)号：US20250057051A1

公开(公告)日：2025-02-13

申请号：US18448657

申请日：2023-08-11

Applicant: Infineon Technologies AG

Inventor： Michael KIRSCH ,  Patrick HANEKAMP ,  Werner ROBL ,  Klemens PRÜGL ,  Juergen ZIMMER ,  Christoph OSWALD

IPC: H10N50/85 ,  C23C14/16 ,  C23C14/34 ,  C23C28/02 ,  C25D3/56 ,  C25D5/02 ,  C25D7/12 ,  G01R33/02 ,  H10N50/01 ,  H10N59/00

Abstract: A layered structure includes a silicon-based substrate comprising a substrate surface; a titanium-copper seed layer arranged on the substrate surface, wherein the titanium-copper seed layer comprises a titanium layer and a copper layer, wherein the titanium layer is arranged on the substrate surface such that covalent bonds are formed between the titanium layer and silicon of the silicon-based substrate, and wherein the copper layer is arranged directly on the titanium layer, such that the titanium layer is arranged between the substrate surface and the copper layer; and a nickel-iron plating layer arranged directly on the copper layer of the titanium-copper seed layer such that the titanium-copper seed layer is arranged between the silicon-based substrate and the nickel-iron plating layer.

公开(公告)号：US20250054843A1

公开(公告)日：2025-02-13

申请号：US18931698

申请日：2024-10-30

Applicant: Infineon Technologies AG

Inventor： Frank Singer ,  Marcus Böhm ,  Andreas Grassmann ,  Martin Gruber ,  Uwe Schindler

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: A package includes a carrier, an electronic component on the carrier, an encapsulant encapsulating at least part of the carrier and the electronic component, and at least one lead extending beyond the encapsulant and having a punched surface, wherein at least part of at least one side flank of the encapsulant has a sawn texture.

公开(公告)号：US20250054842A1

公开(公告)日：2025-02-13

申请号：US18792118

申请日：2024-08-01

Applicant: Infineon Technologies AG

Inventor： Rowel TABAJONDA ,  Michael STADLER ,  Aira Lourdes Baring VILLAMOR ,  Mei Yih GOH ,  Juliane JUNESCH ,  Chee Voon TAN ,  Mei Qi TAY

IPC: H01L23/495 ,  H01L23/00

Abstract: A package including a component for a package is disclosed. In one example, wherein the component comprises a functional body, and a wettability layer arranged on a main surface of the functional body and configured for promoting wetting of a connection medium to be applied on the wettability layer for connecting the component with a further component of the package. The wettability layer has a lateral circumference at least part of which having a concave edge.