DRIVER CIRCUIT FOR CONTROLLING A SEMICONDUCTOR SWITCH

    公开(公告)号:US20240348244A1

    公开(公告)日:2024-10-17

    申请号:US18634554

    申请日:2024-04-12

    摘要: In accordance with an embodiment, a method includes: operating a driver circuit in an idle mode in which portion of the driver circuit are deactivated, wherein the driver circuit is coupled to a first transistor and a second transistor coupled between a supply node and a first circuit node configured to be connected to a load, and operating the driver circuit in the idle mode comprises the driver circuit switching off the first transistor, switching on the second transistor; detecting a change in a voltage across the first transistor; and in response to the change in voltage being detected, activating the inactive portions of the driver circuit to switch on the first transistor and leave the idle mode.

    CAPACITANCE CIRCUIT
    4.
    发明公开
    CAPACITANCE CIRCUIT 审中-公开

    公开(公告)号:US20240339995A1

    公开(公告)日:2024-10-10

    申请号:US18605449

    申请日:2024-03-14

    IPC分类号: H03K5/02 H03K17/687

    CPC分类号: H03K5/02 H03K17/6871

    摘要: The present disclosure provides a capacitance circuit which has an input terminal and is configured to provide an increased capacitance between the input terminal and a first reference voltage. The capacitance circuit comprises a current source structure configured to provide a compensation current at the input terminal, a first transistor having a first control terminal and a first load current and being coupled to the input terminal, a second transistor having a second control terminal, a capacitance amplification circuit configured to provide a capacitance amplification factor and being coupled between the first control terminal and the second control terminal, and a capacitor having a core capacitance and being coupled between the first control terminal and the input terminal, wherein the compensation current corresponds to the first load current during direct current operation, and wherein the increased capacitance is based on the core capacitance and the capacitance amplification factor.

    SUBSTRATE BARCODE READABILITY ENHANCEMENT STRUCTURES AND METHOD

    公开(公告)号:US20240339416A1

    公开(公告)日:2024-10-10

    申请号:US18130692

    申请日:2023-04-04

    摘要: Substrates for use with semiconductor devices are provided. The substrates include a barcode laser etched into a metallic surface or layer of the substrate. A wall of non-metallic material may be formed on the metallic surface or layer and frame the barcode. Separately or in combination, an optically transparent encapsulant may cover a region of the metallic surface or layer that includes the barcode, where the optically transparent encapsulant reduces oxidation of metallic debris produced by laser etching of the barcode and that remains on or near the barcode. Separately or in combination, the substrate may include an electrically insulative body covered by the metallic layer and a trench formed in the metallic layer along a perimeter of the barcode and that exposes the electrically insulative body. Methods of improving readability of the barcode are also provided.

    Ultrasonic welding device
    7.
    发明授权

    公开(公告)号:US12109645B2

    公开(公告)日:2024-10-08

    申请号:US18235428

    申请日:2023-08-18

    摘要: A method of welding includes providing first and second joining partners, providing a welding apparatus that includes a sonotrode comprising a structured working surface, arranging the first and second joining partners to contact one another, and forming a welded connection between the first and second joining partners by contacting the first joining partner with the structured working surface and vibrating the sonotrode at an ultrasonic frequency, wherein the structured working surface comprises a plurality of apexes, a plurality of nadirs between immediately adjacent ones of the apexes, and planar sidewalls that extend between the nadirs and the apexes, and wherein for each of the apexes the planar sidewalls on either side of the respective apex extend along first and second planes that intersect one another at an acute angle.

    POWER SEMICONDUCTOR DEVICE WITH A STRESS-FREE JOINT BETWEEN METAL PARTS AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20240332136A1

    公开(公告)日:2024-10-03

    申请号:US18609133

    申请日:2024-03-19

    IPC分类号: H01L23/495

    摘要: A power semiconductor device includes: at least one substrate; at least one power semiconductor die arranged over the at least one substrate; a first leadframe arranged over the at least one power semiconductor substrate and over the at least one power semiconductor die, the first leadframe being arranged at least partially in a first plane and including one or more connecting portions extending out of the first plane in a first direction; and a second leadframe at least partially arranged in a second plane above or below the first plane and including one or more attachment sites. The one or more connecting portions extend into the second plane at the one or more attachment sites. The one or more connecting portions are arranged at a non-zero distance from the second leadframe, the non-zero distance being bridged by weld seams at the one or more attachment sites.

    Circuit arrangement with a thermal interface

    公开(公告)号:US12107026B2

    公开(公告)日:2024-10-01

    申请号:US17542905

    申请日:2021-12-06

    摘要: A circuit arrangement has a chip arrangement in the form of an embedded Wafer Level Ball Grid Array (eWLB) arrangement with solder contacts on one side and a thermal interface on a side of the chip arrangement facing away from the solder contacts which is designed to dissipate heat from the semiconductor chip. In examples, the thermal interface has a thermally and electrically conductive material, wherein in a top view of the chip arrangement, a contact area in which the thermally and electrically conductive material is in thermal contact with the chip arrangement is limited to the fan-out area. In examples, the thermal interface has at least one RF absorption layer which is designed to absorb electromagnetic radiation at an operating frequency of the semiconductor chip.