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公开(公告)号：US20230343531A1
公开(公告)日：2023-10-26
申请号：US18130446
申请日：2023-04-04
CPC分类号： H01H37/14 , H01H37/72 , H10N70/8613 , H10N70/231 , H10N70/823
摘要： A phase change material switch device is provided. The phase change material switch device includes a phase change material, a first electrode electrically coupled to the phase change material, and at least one heater thermally coupled to the phase change material. An equalization device is configured to provide an impedance coupling between the first electrode and the phase change material. The impedance coupling varies over the phase change material.
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公开(公告)号：US20230308085A1
公开(公告)日：2023-09-28
申请号：US18325875
申请日：2023-05-30
IPC分类号： H03K17/042 , H03K17/0412 , H03K17/687
CPC分类号： H03K17/04206 , H03K17/04123 , H03K17/687 , H03K2217/0054
摘要： A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.
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公开(公告)号：US11990468B2
公开(公告)日：2024-05-21
申请号：US17821615
申请日：2022-08-23
发明人： Valentyn Solomko , Semen Syroiezhin , Mirko Scholz
CPC分类号： H01L27/0288 , H01L27/0255 , H01L27/0266 , H02H9/04
摘要： An RF switch device includes transistors coupled in series forming an RF conductive current path; a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component provides a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event.
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公开(公告)号：US11916546B2
公开(公告)日：2024-02-27
申请号：US17185564
申请日：2021-02-25
发明人： Semen Syroiezhin , Ivan Jevtic , Valentyn Solomko
IPC分类号： H03K17/74 , H03K17/14 , H03K17/16 , H03K17/041 , H04B1/44
CPC分类号： H03K17/16 , H03K17/04106 , H03K17/74 , H03K17/145 , H03K2217/0054 , H03K2217/0081 , H04B1/44
摘要： A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.
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公开(公告)号：US11728800B1
公开(公告)日：2023-08-15
申请号：US17648849
申请日：2022-01-25
IPC分类号： H03K17/04 , H03K17/0412 , H03K17/16 , H03K17/693 , H03K17/042 , H03K17/687
CPC分类号： H03K17/04206 , H03K17/04123 , H03K17/687 , H03K2217/0054
摘要： A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.
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公开(公告)号：US20240122081A1
公开(公告)日：2024-04-11
申请号：US17961795
申请日：2022-10-07
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1286 , H01L45/1226
摘要： A phase change switching device includes a substrate comprising a main surface, an RF input pad and a plurality of RF output pads disposed over the main surface, and phase change switch connections between the RF input pad and each of the RF output pads, wherein the phase change switch connections each include a phase change material and a heating element thermally coupled to the phase change material, wherein each of the RF output pads are arranged outside of an outer perimeter of the RF input pad, and wherein plurality of RF output pads at least partially surrounds the outer perimeter of the RF input pad.
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公开(公告)号：US20220271746A1
公开(公告)日：2022-08-25
申请号：US17185564
申请日：2021-02-25
发明人： Semen Syroiezhin , Ivan Jevtic , Valentyn Solomko
摘要： A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.
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公开(公告)号：US20200321957A1
公开(公告)日：2020-10-08
申请号：US16872829
申请日：2020-05-12
发明人： Semen Syroiezhin , Pablo Araujo Do Nascimento , Winfried Bakalski , Andrea Cattaneo , Jochen Essel , Oguzhan Oezdamar , Johannes Klaus Rimmelspacher , Valentyn Solomko , Danial Tayari , Andreas Wickmann
摘要： A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.
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公开(公告)号：US20240195296A1
公开(公告)日：2024-06-13
申请号：US18581158
申请日：2024-02-19
摘要： A regulated charge pump includes a comparator having a first input coupled to an output of the regulated charge pump, a second input configured for receiving a reference voltage, and an output for generating an output voltage representing a difference between a charging current of the regulated charge pump and a load current of a load coupled to the output of the regulated charge pump; a first converter having an input coupled to the output of the comparator, and an output connected to a control bus configured to indicate an adjustment of the charging current in response to the comparator output; and a driving stage having a first input coupled to the control bus, and an output for providing the charging current, wherein the output of the driving stage comprises the output of the regulated charge pump.
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公开(公告)号：US20240154610A1
公开(公告)日：2024-05-09
申请号：US18406982
申请日：2024-01-08
发明人： Semen Syroiezhin , Valentyn Solomko , Ivan Jevtic
IPC分类号： H03K17/16 , H03K17/041 , H03K17/74
CPC分类号： H03K17/16 , H03K17/04106 , H03K17/74 , H03K17/145
摘要： A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.
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