公开(公告)号：US20230238952A1

公开(公告)日：2023-07-27

申请号：US17648849

申请日：2022-01-25

申请人： Infineon Technologies AG

发明人： Semen Syroiezhin ,  Valentyn Solomko ,  Matthias Voelkel ,  Aleksey Zolotarevskyi

IPC分类号： H03K17/042 ,  H03K17/0412 ,  H03K17/687

CPC分类号： H03K17/04206 ,  H03K17/04123 ,  H03K17/687 ,  H03K2217/0054

摘要： A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.

公开(公告)号：US11728800B1

公开(公告)日：2023-08-15

申请号：US17648849

申请日：2022-01-25

申请人： Infineon Technologies AG

发明人： Semen Syroiezhin ,  Valentyn Solomko ,  Matthias Voelkel ,  Aleksey Zolotarevskyi

IPC分类号： H03K17/04 ,  H03K17/0412 ,  H03K17/16 ,  H03K17/693 ,  H03K17/042 ,  H03K17/687

CPC分类号： H03K17/04206 ,  H03K17/04123 ,  H03K17/687 ,  H03K2217/0054

摘要： A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.

公开(公告)号：US20230308085A1

公开(公告)日：2023-09-28

申请号：US18325875

申请日：2023-05-30

申请人： Infineon Technologies AG

发明人： Semen Syroiezhin ,  Valentyn Solomko ,  Matthias Voelkel ,  Aleksey Zolotarevskyi

IPC分类号： H03K17/042 ,  H03K17/0412 ,  H03K17/687

CPC分类号： H03K17/04206 ,  H03K17/04123 ,  H03K17/687 ,  H03K2217/0054

摘要： A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.