公开(公告)号：US20240341205A1

公开(公告)日：2024-10-10

申请号：US18340253

申请日：2023-06-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Hsueh Yang

IPC分类号： H10N70/00

CPC分类号： H10N70/823 ,  H10N70/023 ,  H10N70/026 ,  H10N70/8613 ,  H10N70/231 ,  H10N70/841 ,  H10N70/8828

摘要： A radio frequency (RF) switch includes a first conductive component and a second conductive component each disposed over a material layer in a cross-sectional side view. The RF switch includes a heater component disposed over the material layer in the cross-sectional side view. A segment of the heater component is disposed between the first conductive component and the second conductive component in the cross-sectional side view. An upper surface of the heater component is less elevated vertically than an upper surface of the first conductive component or the second conductive component in the cross-sectional side view. The RF switch includes a phase change material (PCM) disposed over the segment of the heater component and at least partially over the first conductive component and the second conductive component. A resistivity of the PCM changes in response to an application of heat. The heat is produced by the heater component.

公开(公告)号：US20240341204A1

公开(公告)日：2024-10-10

申请号：US18298132

申请日：2023-04-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Pin Chang ,  Hung-Ju Li ,  Yu-Wei Ting ,  Kuo-Ching Huang

IPC分类号： H10N70/20 ,  H10N70/00

CPC分类号： H10N70/231 ,  H10N70/011 ,  H10N70/823 ,  H10N70/8413 ,  H10N70/8828

摘要： A semiconductor device includes a first film, a second film, and a third film that each include a phase change material (PCM) and are arranged with respect to one another along a first lateral direction. The semiconductor device includes a first metal pad, a second metal pad, a third metal pad, and a fourth metal pad. The first and second metal pads are disposed over ends of the first film, respectively, the second and third metal pads are disposed over ends of the second film, respectively, and the third and fourth metal pads are disposed over ends of the third film, respectively. The semiconductor device includes a first heater, a second heater, and a third heater, respectively disposed below the first film, the second film, and the third film.

公开(公告)号：US20240224824A1

公开(公告)日：2024-07-04

申请号：US18304601

申请日：2023-04-21

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Hung-Ju Li ,  Yu-Wei Ting ,  Hui Hung Kuo ,  Chien Ta Huang ,  Kuo-Pin Chang ,  Kuo-Ching Huang

IPC分类号： H10N70/00 ,  H10N70/20

CPC分类号： H10N70/8413 ,  H10N70/011 ,  H10N70/231 ,  H10N70/823

摘要： A device structure includes a heater line located over a substrate, an aluminum nitride layer having an inhomogeneous material composition, and a phase change material line. A top surface portion of the aluminum nitride layer has a higher atomic concentration of nitrogen than a bottom surface portion of the aluminum nitride layer contacting a top surface of the heater line. The PCM line includes a middle portion that overlies the heater line, a first end portion adjoined to a first side of the middle portion, and a second end portion adjoined to a second side of the middle portion.

公开(公告)号：US20240090351A1

公开(公告)日：2024-03-14

申请号：US18518643

申请日：2023-11-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： GEORGIOS VELLIANITIS ,  MARCUS JOHANNES HENRICUS VAN DAL ,  GERBEN DOORNBOS

IPC分类号： H10N70/20 ,  H10N70/00

CPC分类号： H10N70/25 ,  H10N70/021 ,  H10N70/253 ,  H10N70/823 ,  H10N70/884

摘要： A semiconductor structure includes a substrate; a resistance variable layer disposed over the substrate; a gate structure disposed over the resistance variable layer; a dielectric layer disposed over the resistance variable layer and surrounding the gate structure; a first contact plug disposed over the resistance variable layer and extending through the dielectric layer; and a second contact plug disposed over the resistance variable layer and opposite to the first contact plug and extending through the dielectric layer, wherein the resistance variable layer is semiconductive and ferroelectric. A method of manufacturing a semiconductor structure is also disclosed.

公开(公告)号：US20240044713A1

公开(公告)日：2024-02-08

申请号：US18329061

申请日：2023-06-05

申请人： UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

发明人： DEBASHIS CHANDA ,  SAYAN CHANDRA ,  TIANYI GUO

IPC分类号： G01J5/02 ,  H10N70/20 ,  H10N70/00 ,  G01J5/22

CPC分类号： G01J5/02 ,  H10N70/231 ,  H10N70/823 ,  H10N70/026 ,  G01J5/22 ,  H10N70/8833

摘要： An IR sensor comprises a substrate, a rear reflector on the substrate, a supporting layer a PCM layer carried by the supporting layer, and first and second electrically conductive contacts carried by the substrate and coupled to opposing sides of the PCM layer. The IR sensor also includes a circuit coupled to the first and second electrically conductive contacts and configured to apply an electrical bias signal to the PCM layer to generate an electrical oscillation, and detect the frequency modulation (FM) of the oscillation signal based upon IR radiation received by the PCM layer.

公开(公告)号：US11856875B2

公开(公告)日：2023-12-26

申请号：US17134572

申请日：2020-12-28

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Jianxun Sun ,  Juan Boon Tan ,  Eng Huat Toh

IPC分类号： H01L45/00 ,  H10N70/00 ,  H10B63/00 ,  H10N70/20

CPC分类号： H10N70/823 ,  H10B63/80 ,  H10N70/063 ,  H10N70/841 ,  H10N70/24 ,  H10N70/883 ,  H10N70/8833

摘要： A memory device may be provided. The memory device may include a first electrode including a first side surface and a second side surface opposite to the first side surface; a passivation layer arranged laterally alongside the first side surface of the first electrode; a switching layer arranged laterally alongside the passivation layer; and a second electrode arranged along the switching layer.

公开(公告)号：US11647681B2

公开(公告)日：2023-05-09

申请号：US17060295

申请日：2020-10-01

申请人： International Business Machines Corporation

发明人： Baozhen Li ,  Chih-Chao Yang ,  Andrew Tae Kim ,  Barry Linder

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H10N70/063 ,  H10B63/80 ,  H10N70/231 ,  H10N70/823 ,  H10N70/8413 ,  H10N70/8828

摘要： A phase change memory (PCM) cell in an integrated circuit and a method of fabricating it involve depositing a layer of PCM material on a surface of a dielectric, and patterning the layer of PCM material into a plurality of PCM blocks. Heater material is formed on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells. Each of the plurality of the PCM blocks and the heater material on both the sidewalls represents a PCM cell. An additional layer of the dielectric is deposited above and between the plurality of the PCM cells, and trenches are formed in the dielectric. Trenches are formed in contact with each side of each of the plurality of the PCM cells. Metal is deposited in each of the trenches. Current flow in the metal heats the heater material of one of the PCM cells.

公开(公告)号：US20240298552A1

公开(公告)日：2024-09-05

申请号：US18590072

申请日：2024-02-28

申请人： Commissariat à I'Énergie Atomique et aux Énergies Alternatives

发明人： Denis Mercier ,  Bruno Reig

IPC分类号： H10N70/20 ,  H10N70/00

CPC分类号： H10N70/231 ,  H10N70/823 ,  H10N70/8413 ,  H10N70/8828

摘要： The present description concerns a switch including: first, second, third, and fourth conductive regions; a first region made of a phase-change material coupling the first and second conductive regions; a second region made of a phase-change material coupling the second and third conductive regions; and a third region made of a phase-change material coupling the second and fourth conductive regions.

公开(公告)号：US20240251686A1

公开(公告)日：2024-07-25

申请号：US18426367

申请日：2024-01-30

申请人： XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE CO., LTD.

发明人： SZU-CHUN KANG ,  Tingying SHEN ,  Lijun SHAN ,  Taiwei CHIU ,  Yu LIU ,  Yajun ZHANG

IPC分类号： H10N70/00 ,  H10N70/20

CPC分类号： H10N70/823 ,  H10N70/011 ,  H10N70/24

摘要： Disclosed in embodiments of the present application are a linear resistive element and a preparation method therefor. The linear resistive element includes a substrate unit, a function unit and an electrode unit. The substrate unit includes a substrate layer, which is configured to connect the function unit and the electrode unit. The electrode unit includes a first electrode and a second electrode. The first and second electrodes are deposited on the substrate layer, and the function unit is connected between the first and second electrodes. The function unit includes first dielectric layers and resistive layers. The first dielectric layers and the resistive layers are deposited on the substrate layer in an alternately stacked manner. A number of the resistive layers is at least two, and a conductive filament for conductively connecting the first and second electrodes is formed in each of the resistive layers.

公开(公告)号：US20240122082A1

公开(公告)日：2024-04-11

申请号：US18538034

申请日：2023-12-13

申请人： NORTHWESTERN UNIVERSITY

发明人： Vinod K. Sangwan ,  Hong-Sub Lee ,  Mark C. Hersam

IPC分类号： H10N70/20 ,  G11C13/00 ,  H10B63/00 ,  H10N70/00

CPC分类号： H10N70/253 ,  G11C13/0002 ,  H10B63/30 ,  H10N70/023 ,  H10N70/24 ,  H10N70/823 ,  H10N70/841 ,  H10N70/8822 ,  H10N70/8825 ,  G06N3/049

摘要： One aspect of the invention relates to a method for fabricating a memtransistor comprising growing a polycrystalline monolayer film on a substrate, wherein the polycrystalline monolayer film contains grains defining a plurality of grain boundaries thereof; and forming an electrode array on the grown polycrystalline monolayer film, wherein the electrode array has a plurality of electrodes electrically coupled with the polycrystalline monolayer film such that each pair of electrodes defines a channel in the polycrystalline monolayer film therebetween.