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公开(公告)号：US20230402241A1
公开(公告)日：2023-12-14
申请号：US17834944
申请日：2022-06-08
发明人： Yu-Wei Ting , Kuo-Pin Chang , Hung-Ju Li , Kuo-Ching Huang
摘要： A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, and a heater element on the semiconductor substrate, the heater element configured to generate heat in response to a current flowing therethrough. The semiconductor device also includes a conductor material having a programmable conductivity, and an insulator layer between the heater element and the conductor material, where the conductor material is configured to be programmed by applying one or more voltage differences to one or more of the heater element and the conductor material, and where a capacitance between the conductor material and the heater element is configured to be controlled by the voltage differences such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed.
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公开(公告)号：US20240341204A1
公开(公告)日：2024-10-10
申请号：US18298132
申请日：2023-04-10
发明人： Kuo-Pin Chang , Hung-Ju Li , Yu-Wei Ting , Kuo-Ching Huang
CPC分类号： H10N70/231 , H10N70/011 , H10N70/823 , H10N70/8413 , H10N70/8828
摘要： A semiconductor device includes a first film, a second film, and a third film that each include a phase change material (PCM) and are arranged with respect to one another along a first lateral direction. The semiconductor device includes a first metal pad, a second metal pad, a third metal pad, and a fourth metal pad. The first and second metal pads are disposed over ends of the first film, respectively, the second and third metal pads are disposed over ends of the second film, respectively, and the third and fourth metal pads are disposed over ends of the third film, respectively. The semiconductor device includes a first heater, a second heater, and a third heater, respectively disposed below the first film, the second film, and the third film.
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3.发明公开公开(公告)号：US20230413691A1
公开(公告)日：2023-12-21
申请号：US17840624
申请日：2022-06-15
发明人： Kuo-Pin Chang , Hung-Ju Li , Yu-Wei Ting , Kuo-Ching Huang
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1286 , H01L45/146 , H01L45/1608 , H01L45/144 , H01L45/1226 , H01L45/1675
摘要： A phase-change material (PCM) switching device is provided. The PCM switching device includes: a base dielectric layer over a semiconductor substrate; a heater element embedded in the base dielectric layer, the heater element comprising a first metal element and configured to generate heat in response to a current flowing therethrough; a self-aligned dielectric layer disposed on the heater element, wherein the self-aligned dielectric layer comprises one of an oxide of the first metal element and a nitride of the first metal element, and the self-aligned dielectric layer is horizontally aligned with the heater element; a PCM region disposed on the self-aligned dielectric layer, wherein the PCM region comprises a PCM operable to switch between an amorphous state and a crystalline state in response to the heat generated by the heater element; and two metal pads electrically connected to the PCM region.
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公开(公告)号：US20230397440A1
公开(公告)日：2023-12-07
申请号：US17833907
申请日：2022-06-07
发明人： Hung-Ju Li , Kuo-Pin Chang , Yu-Wei Ting , Ching-En Chen , Kuo-Ching Huang
IPC分类号： H01L27/24
CPC分类号： H01L27/2427
摘要： A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.
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