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    Method of producing a thermocouple having a tailored thermoelectric response
    1.
    发明授权
    Method of producing a thermocouple having a tailored thermoelectric response 有权

    公开(公告)号：US09786828B2

    公开(公告)日：2017-10-10

    申请号：US14185339

    申请日：2014-02-20

    申请人： Weston Aerospace Limited

    发明人： Paul Hanscombe

    IPC分类号： H01L35/12 ,  H01L35/20 ,  G01K7/02 ,  H01L35/34

    CPC分类号： H01L35/12 ,  G01K7/02 ,  H01L35/20 ,  H01L35/34

    摘要： A method is disclosed for tailoring the thermoelectric response of a thermocouple to that desired by a user. The method comprises the steps of; (a) selecting a first thermoelectric material, (b) selecting a second thermoelectric material having dissimilar thermoelectric properties to the first thermoelectric material, a thermocouple formed from the first thermoelectric material and the second thermoelectric material having a known thermoelectric response, and (c) modifying the chemical composition of at least one of the first thermoelectric material and the second thermoelectric material to produce a thermocouple having a tailored thermoelectric response. In specific embodiments, the chemical composition may be modified by selectively depleting one or more chemical elements from the thermoelectric material or by selectively adding, or increasing the proportion of, one or more elements to the thermoelectric material.

    Thermoelectric conversion device
    2.
    发明授权
    Thermoelectric conversion device 有权
    热电转换装置

    公开(公告)号：US09269883B2

    公开(公告)日：2016-02-23

    申请号：US14539028

    申请日：2014-11-12

    申请人： FUJITSU LIMITED

    发明人： John David Baniecki ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Kazunori Yamanaka

    IPC分类号： H01L35/00 ,  H01L35/32 ,  H01L35/22 ,  H01L35/02 ,  H01L35/26 ,  H01L35/12 ,  H01L35/14

    CPC分类号： H01L35/325 ,  H01L35/00 ,  H01L35/02 ,  H01L35/12 ,  H01L35/14 ,  H01L35/22 ,  H01L35/26 ,  H01L35/32

    摘要： A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

    摘要翻译： 热电转换装置包括其中包括Sr和Ti并具有第一带隙的第一钙钛矿电介质膜和包括Sr和Ti并且具有小于第一带隙的第二带隙的第二钙钛矿电介质膜的叠层 所述第一和第二钙钛矿电介质膜被掺杂以具有导电性，所述第一和第二钙钛矿电介质膜具有各自的组成，使得在所述第一钙钛矿的导带之间最大出现0.54eV的带宽 电介质膜和第二钙钛矿电介质膜的导带。

    ADVERSE EVENT-RESILIENT NETWORK SYSTEM
    5.
    发明申请
    ADVERSE EVENT-RESILIENT NETWORK SYSTEM 有权
    不利的活动网络系统

    公开(公告)号：US20130263905A1

    公开(公告)日：2013-10-10

    申请号：US13835373

    申请日：2013-03-15

    申请人： Thomas Beretich

    发明人： Thomas Beretich

    IPC分类号： H01M14/00 ,  H01L35/02 ,  H01G9/21

    CPC分类号： H01M14/00 ,  H01G9/21 ,  H01G11/02 ,  H01G11/04 ,  H01L35/02 ,  H01L35/12 ,  H01L35/14 ,  H01L35/22 ,  H01L35/32 ,  H01M14/005 ,  Y02E60/13

    摘要： An adverse event-resilient network system consisting of autonomously powered and mobile nodes in communication with each other either through radio, light or other electromagnetic signals or through a physical connection such as through wiring, cables or other physical connected methods capable of carrying information and communication signals. The nodes powered by an energy generator comprising multiple data, information and voice gathering, receiving and emitting devices as well as mechanical, optical and propulsion devices.

    摘要翻译： 由通过无线电，光或其他电磁信号或通过物理连接（例如通过布线，电缆或能够承载信息和通信的其他物理连接方式）的彼此通信的自主供电和移动节点组成的不利的事件弹性网络系统 信号。 由能量发生器供电的节点包括多个数据，信息和语音采集，接收和发射装置以及机械，光学和推进装置。

    THERMOELECTRIC MATERIALS
    6.
    发明申请
    THERMOELECTRIC MATERIALS 有权
    热电材料

    公开(公告)号：US20120055528A1

    公开(公告)日：2012-03-08

    申请号：US12748531

    申请日：2010-03-29

    申请人： Patrick John McCann

    发明人： Patrick John McCann

    IPC分类号： H01L35/16 ,  H01L35/00

    CPC分类号： H01L35/16 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/26 ,  H01L33/06 ,  H01L33/285 ,  H01L35/12 ,  H01L35/20 ,  H01L35/22 ,  H01L35/26

    摘要： A thermoelectric material having a high ZT value is provided. In general, the thermoelectric material is a thin film thermoelectric material that includes a heterostructure formed of IV-VI semiconductor materials, where the heterostructure includes at least one potential barrier layer. In one embodiment, the heterostructure is formed of IV-VI semiconductor materials and includes a first matrix material layer, a potential barrier material layer adjacent to the first matrix material layer and formed of a wide bandgap material, and a second matrix material layer that is adjacent the potential barrier material layer opposite the first matrix material layer. A thickness of the potential barrier layer is approximately equal to a mean free path distance for charge carriers at a desired temperature.

    摘要翻译： 提供具有高ZT值的热电材料。 通常，热电材料是包括由IV-VI半导体材料形成的异质结构的薄膜热电材料，其中异质结构包括至少一个势垒层。 在一个实施例中，异质结构由IV-VI半导体材料形成，并且包括第一基体材料层，与第一基质材料层相邻并由宽带隙材料形成的势垒材料层，以及第二基质材料层， 邻近与第一基质材料层相对的势垒材料层。 势垒层的厚度近似等于在期望温度下载流子的平均自由程距离。

    HEAT CONTROLLED SWITCH
    9.
    发明公开
    HEAT CONTROLLED SWITCH 审中-公开

    公开(公告)号：US20230402241A1

    公开(公告)日：2023-12-14

    申请号：US17834944

    申请日：2022-06-08

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Yu-Wei Ting ,  Kuo-Pin Chang ,  Hung-Ju Li ,  Kuo-Ching Huang

    IPC分类号： H01H37/12 ,  H01H37/32

    CPC分类号： H01H37/12 ,  H01L35/12 ,  H01H37/32

    摘要： A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, and a heater element on the semiconductor substrate, the heater element configured to generate heat in response to a current flowing therethrough. The semiconductor device also includes a conductor material having a programmable conductivity, and an insulator layer between the heater element and the conductor material, where the conductor material is configured to be programmed by applying one or more voltage differences to one or more of the heater element and the conductor material, and where a capacitance between the conductor material and the heater element is configured to be controlled by the voltage differences such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed.