公开(公告)号：US20180248100A1

公开(公告)日：2018-08-30

申请号：US15885917

申请日：2018-02-01

Applicant: SHOWA DENKO K.K.

Inventor： Katsumi Toyama ,  Yasutaka Yoshida ,  Akifumi Muraoka

IPC: H01L35/32 ,  H01L35/18 ,  H01L35/02

CPC classification number: H01L35/32 ,  H01L35/02 ,  H01L35/08 ,  H01L35/18

Abstract: Unevenness in thickness of a junction layer of a thermoelectric element including a thermoelectric conversion layer composed of an alloy having a filled skutterudite structure is reduced. The p-type thermoelectric element includes: a p-type thermoelectric conversion layer composed of an alloy having a filled skutterudite structure and containing antimony; a p-side first conductor layer composed of iron foil and laminated on the p-type thermoelectric conversion layer; a p-side second conductor layer composed of titanium foil and laminated on the p-side first conductor layer; and a p-side junction layer composed of copper foil and laminated on the p-side second conductor layer to be used for electrical junction with an electrode attached to a substrate.

公开(公告)号：US20180172400A1

公开(公告)日：2018-06-21

申请号：US15893037

申请日：2018-02-09

Applicant: Grace Engineering Corp.

Inventor： Louis Grace, JR.

IPC: F41G1/34 ,  H01L35/32 ,  H01L35/30 ,  H01L35/18 ,  F41B5/14 ,  F41G1/467 ,  F41C23/16

CPC classification number: F41G1/345 ,  F41B5/1403 ,  F41C23/16 ,  F41G1/467 ,  H01L35/18 ,  H01L35/30 ,  H01L35/32

Abstract: A range finder for determining a distance to a target object includes a thermoelectric module and a range finding unit. The range finding unit includes a light source for emitting light onto a target object, a light receiving unit configured to receive light reflected by the target object, a distance calculation unit for calculating the distance to the target object based on the reflected light, and a display unit for displaying the calculated distance to the target object. The thermoelectric module generates electricity from a thermal gradient, produced from a user's body heat that is transferred to the module. The electricity power generated by the thermoelectric module powers the components of the range finding unit. Related methods are also provided.

公开(公告)号：US20180053707A1

公开(公告)日：2018-02-22

申请号：US15658438

申请日：2017-07-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siyuranga O. Koswatta ,  Sungjae Lee ,  Lan Luo ,  Scott K. Springer ,  Richard A. Wachnik

IPC: H01L23/38 ,  H01L27/12 ,  H01L35/18 ,  H01L35/16 ,  H01L35/34 ,  H01L27/16 ,  H01L35/04 ,  H01L35/22 ,  H01L35/20 ,  H01L35/28

CPC classification number: H01L23/38 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/1203 ,  H01L27/16 ,  H01L35/04 ,  H01L35/16 ,  H01L35/18 ,  H01L35/20 ,  H01L35/22 ,  H01L35/28 ,  H01L35/34

Abstract: A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.

公开(公告)号：US20180008332A1

公开(公告)日：2018-01-11

申请号：US15202562

申请日：2016-07-05

Applicant: Biosense Webster (Israel ) LTD.

Inventor： Piyush Sheth

IPC: A61B18/02 ,  H01L35/32 ,  A61L29/02 ,  A61L29/14 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/30 ,  A61M25/01 ,  A61B18/14 ,  A61B18/00

CPC classification number: A61B18/02 ,  A61B2018/00023 ,  A61B2018/00047 ,  A61B2018/00083 ,  A61B2018/00095 ,  A61B2018/0016 ,  A61B2018/0022 ,  A61B2018/00345 ,  A61B2018/00351 ,  A61B2018/00577 ,  A61B2018/0212 ,  A61B2018/025 ,  A61B2018/0293 ,  A61B2018/1435 ,  A61L29/02 ,  A61L29/14 ,  A61M25/0136 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/30 ,  H01L35/32

Abstract: A catheter has a cooling distal section for freezing tissue to sub-zero temperatures with one or more miniature reverse thermoelectric or Peltier elements, also referred to herein as micro-Peltier cooling (MPC) units or electrodes. The MPC units may be on outer surface of an inflatable or balloon member or a tip electrode shell wall that has a fluid-containing interior cavity acting as a heat sink. Each MPC unit has a hot junction and a cold junction whose temperatures are regulated by the heat sink, and a voltage/current applied to the MPC units. A temperature differential of about 70 degrees Celsius may be achieved between the hot and cold junctions for extreme cooling, especially where the MPC units include semiconductor materials with high Peltier co-efficients. An outer coating of thermally-conductive but electrically-insulative material seals the MPC units to prevent unintended current paths through the MPC units.

公开(公告)号：US09837593B2

公开(公告)日：2017-12-05

申请号：US14583329

申请日：2014-12-26

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Materials Co., Ltd.

Inventor： Takao Sawa

IPC: H01L35/00 ,  H01L35/18 ,  C22C19/03 ,  C22C19/07 ,  H01L35/32 ,  H01L35/34

CPC classification number: H01L35/18 ,  C22C19/03 ,  C22C19/07 ,  H01L35/32 ,  H01L35/34

Abstract: A thermoelectric conversion material made of a polycrystalline material represented by a composition formula (1) shown below and having an MgAgAs type crystal structure is provided. An insulating coat is provided on at least one surface of the polycrystalline material. Composition formula (1): (Aa1Tib1)xDyX100-x-y, wherein 0.2≦a1≦0.7, 0.3≦b1≦0.8, a1+b1=1, 30≦x≦35, 30≦y≦35 hold, wherein A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.

公开(公告)号：US20170263839A1

公开(公告)日：2017-09-14

申请号：US15417284

申请日：2017-01-27

Applicant: Panasonic Corporation

Inventor： KEN KUROSAKI ,  SHINSUKE YAMANAKA ,  YUSUFU AIKEBAIER ,  SEONGHO CHOI ,  JUNYA TANAKA ,  SATOSHI MAESHIMA

IPC: H01L35/16 ,  H01L35/34

CPC classification number: H01L35/16 ,  C22C12/00 ,  H01L35/18 ,  H01L35/34

Abstract: Provided herein is a skutterudite-type material having high thermoelectric conversion characteristics in a high temperature region. A thermoelectric conversion material is provided that contains a skutterudite-type material represented by the following composition formula (I) IxGayM4Pn12   (I), wherein x and y satisfy 0.04≦x≦0.11, 0.11≦y≦0.34, and x

公开(公告)号：US20170155267A1

公开(公告)日：2017-06-01

申请号：US15145786

申请日：2016-05-03

Applicant: Inventec (Pudong) Technology Corporation ,  INVENTEC CORPORATION

Inventor： Meng-Lung CHIANG

IPC: H02J7/00 ,  H01L35/18 ,  H01L35/10 ,  H01L35/16

CPC classification number: H02J7/0091 ,  H01L35/10 ,  H01L35/16 ,  H01L35/18 ,  H02J7/0042

Abstract: A charging/discharging apparatus utilizing the thermoelectric conversion effect includes a thermoelectric conversion module, a current path providing unit and a charging/discharging element. The thermoelectric conversion module is disposed between an upper cover and a lower cover of a wearable device. The thermoelectric conversion module generates a current according to a temperature difference between the upper cover and the lower cover. The current path providing unit coupling with the thermoelectric conversion module provides a first current path and a second current path. The charging/discharging element couples with the current path providing unit. When a temperature of the lower cover is higher than a temperature of the upper cover, the current charges the charging/discharging element through the first current path. When a temperature of the upper cover is higher than a temperature of the lower cover, the current charges the charging/discharging element through the second current path.

公开(公告)号：US20170098749A1

公开(公告)日：2017-04-06

申请号：US15280241

申请日：2016-09-29

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Seongjun PARK ,  Hyeonjin SHIN ,  Sungwng KIM ,  Eunsung KIM ,  Jaeyeol HWANG

IPC: H01L35/16 ,  H01L35/34 ,  H01L35/10 ,  H01L35/18

CPC classification number: H01L35/16 ,  H01L21/02488 ,  H01L21/02502 ,  H01L35/10 ,  H01L35/18 ,  H01L35/34

Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

公开(公告)号：US20170069816A1

公开(公告)日：2017-03-09

申请号：US15252955

申请日：2016-08-31

Applicant: Yamaha Corporation

Inventor： Yuma HORIO ,  Takahiro HAYASHI

IPC: H01L35/32 ,  H01L35/16 ,  H01L35/34 ,  H01L35/18

CPC classification number: H01L35/32 ,  H01L35/08 ,  H01L35/16 ,  H01L35/18 ,  H01L35/34

Abstract: Provided is a thermoelectric conversion module having a high heat resistance. The thermoelectric conversion module includes a first substrate, a second substrate, a thermoelectric element, and a bonding layer. The first substrate includes a first metalized layer. The second substrate includes a second metalized layer which faces the first metalized layer. The thermoelectric element includes a chip formed from a thermoelectric material and is arranged between the first metalized layer and the second metalized layer. The bonding layer is composed of a sintered body of a metallic material of which the average crystal particle diameter is no greater than 20 μm and bonds the first metalized layer and the second metalized layer with the thermoelectric element.

Abstract translation: 提供具有高耐热性的热电转换模块。 热电转换模块包括第一基板，第二基板，热电元件和接合层。 第一基板包括第一金属化层。 第二基板包括面向第一金属化层的第二金属化层。 热电元件包括​​由热电材料形成的芯片，并且布置在第一金属化层和第二金属化层之间。 接合层由平均结晶粒径不大于20μm的金属材料的烧结体构成，并且将第一金属化层和第二金属化层与热电元件接合。

公开(公告)号：US20160247995A1

公开(公告)日：2016-08-25

申请号：US15031312

申请日：2014-10-21

Applicant: DENSO CORPORATION

Inventor： Norio GOUKO ,  Atusi SAKAIDA ,  Toshihisa TANIGUCHI ,  Yoshihiko SHIRAISHI ,  Keiji OKAMOTO

IPC: H01L35/32 ,  H01L35/20 ,  H01L35/18 ,  H01L35/22 ,  H01L35/16 ,  H01L35/34

CPC classification number: H01L35/325 ,  H01L35/16 ,  H01L35/18 ,  H01L35/20 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

Abstract: A converter includes a first insulating substrate having a first surface on which a wiring pattern is formed, a second insulating substrate integrated with the first insulating substrate, and a plurality of thermoelectric conversion elements of the same conductivity type arranged between the first and second insulating substrates and connected in series via the wiring pattern. The wiring pattern includes a plurality of first connecting portions formed in a first region of the first insulating substrate, a plurality of second connecting portions formed in a second region thereof, and a plurality of coupling portions coupling the first connecting portions to the second connecting portions, to connect a set of first and second connecting portions to thermoelectric conversion elements. The coupling portions each couple, in adjacent thermoelectric conversion elements, a first connecting portion connected to one of the thermoelectric conversion elements to a second connecting portion connected to the other of the thermoelectric conversion elements.

Abstract translation: A转换器包括具有形成有布线图案的第一表面的第一绝缘基板，与第一绝缘基板一体化的第二绝缘基板和布置在第一和第二绝缘基板之间的多个相同导电类型的热电转换元件 并通过布线图案串联连接。 布线图形包括形成在第一绝缘基板的第一区域中的多个第一连接部，形成在第二区域中的多个第二连接部，以及将第一连接部与第二连接部 将一组第一和第二连接部分连接到热电转换元件。 耦合部分在相邻的热电转换元件中耦合连接到一个热电转换元件的第一连接部分到连接到另一个热电转换元件的第二连接部分。