公开(公告)号：US10103083B2

公开(公告)日：2018-10-16

申请号：US15658438

申请日：2017-07-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siyuranga O. Koswatta ,  Sungjae Lee ,  Lan Luo ,  Scott K. Springer ,  Richard A. Wachnik

IPC: H01L27/16 ,  H01L23/38 ,  H01L35/20 ,  H01L35/22 ,  H01L35/04 ,  H01L35/28 ,  H01L35/34 ,  H01L35/16 ,  H01L35/18 ,  H01L27/12 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.

公开(公告)号：US20180053707A1

公开(公告)日：2018-02-22

申请号：US15658438

申请日：2017-07-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siyuranga O. Koswatta ,  Sungjae Lee ,  Lan Luo ,  Scott K. Springer ,  Richard A. Wachnik

IPC: H01L23/38 ,  H01L27/12 ,  H01L35/18 ,  H01L35/16 ,  H01L35/34 ,  H01L27/16 ,  H01L35/04 ,  H01L35/22 ,  H01L35/20 ,  H01L35/28

CPC classification number: H01L23/38 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/1203 ,  H01L27/16 ,  H01L35/04 ,  H01L35/16 ,  H01L35/18 ,  H01L35/20 ,  H01L35/22 ,  H01L35/28 ,  H01L35/34

Abstract: A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.

公开(公告)号：US09773717B1

公开(公告)日：2017-09-26

申请号：US15242643

申请日：2016-08-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siyuranga O. Koswatta ,  Sungjae Lee ,  Lan Luo ,  Scott K. Springer ,  Richard A. Wachnik

IPC: H01L23/38 ,  H01L35/20 ,  H01L35/22 ,  H01L35/04 ,  H01L35/28 ,  H01L35/34 ,  H01L35/16 ,  H01L35/18 ,  H01L27/12 ,  H01L27/16

CPC classification number: H01L23/38 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/1203 ,  H01L27/16 ,  H01L35/04 ,  H01L35/16 ,  H01L35/18 ,  H01L35/20 ,  H01L35/22 ,  H01L35/28 ,  H01L35/34

Abstract: A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.