公开(公告)号：US08901612B2

公开(公告)日：2014-12-02

申请号：US13404548

申请日：2012-02-24

申请人： Allen L. Gray ,  Robert Joseph Therrien ,  Patrick John McCann

发明人： Allen L. Gray ,  Robert Joseph Therrien ,  Patrick John McCann

IPC分类号： H01L21/02 ,  H01L29/26 ,  H01L29/15

CPC分类号： H01L29/155 ,  H01L29/26

摘要： Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

摘要翻译： 公开了薄膜异质结构热电材料的实施例及其制造方法。 通常，热电材料以IIa和IV-VI族材料体系形成。 热电材料包括外延异质结构，通过外延异质结构的适当工程和明智优化，在宽温度范围内，以塞贝克系数，导电率和热导率表现出高的热泵浦和品质因数性能。

公开(公告)号：US08563844B2

公开(公告)日：2013-10-22

申请号：US13416246

申请日：2012-03-09

申请人： Allen L. Gray ,  Robert Joseph Therrien ,  Patrick John McCann

发明人： Allen L. Gray ,  Robert Joseph Therrien ,  Patrick John McCann

IPC分类号： H01L35/26 ,  H01L35/22

CPC分类号： H01L29/155 ,  H01L29/26

摘要： Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

摘要翻译： 公开了薄膜异质结构热电材料的实施例及其制造方法。 通常，热电材料以IIa和IV-VI族材料体系形成。 热电材料包括外延异质结构，通过外延异质结构的适当工程和明智优化，在宽温度范围内，以塞贝克系数，导电率和热导率表现出高的热泵浦和品质因数性能。

公开(公告)号：US08519380B2

公开(公告)日：2013-08-27

申请号：US13537164

申请日：2012-06-29

申请人： Patrick John McCann

发明人： Patrick John McCann

IPC分类号： H01L29/15

CPC分类号： H01L35/16 ,  H01L29/152 ,  H01L35/26

摘要： Embodiments of a material having low cross-plane thermal conductivity are provided. Preferably, the material is a thermoelectric material. In general, the thermoelectric material is designed to block phonons, which reduces or eliminates heat transport due to lattice vibrations and thus cross-plane thermal conductivity. By reducing the thermal conductivity of the thermoelectric material, a figure-of-merit (ZT) of the thermoelectric material is improved. In one embodiment, the thermoelectric material includes multiple superlattice periods that block, or reflect, multiple phonon wavelengths.

摘要翻译： 提供具有低横截面导热性的材料的实施例。 优选地，该材料是热电材料。 通常，热电材料被设计成阻挡声子，这减少或消除了由于晶格振动导致的热传递，从而减少了交叉平面导热性。 通过降低热电材料的热导率，提高了热电材料的品质因数（ZT）。 在一个实施例中，热电材料包括阻挡或反射多个声子波长的多个超晶格周期。

公开(公告)号：US09059363B2

公开(公告)日：2015-06-16

申请号：US12748531

申请日：2010-03-29

申请人： Patrick John McCann

发明人： Patrick John McCann

IPC分类号： H01L35/22 ,  H01L35/16 ,  H01L33/28 ,  H01L35/12 ,  H01L35/26 ,  H01L33/06 ,  B82Y20/00 ,  H01L29/15 ,  H01L29/26 ,  H01L35/20

CPC分类号： H01L35/16 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/26 ,  H01L33/06 ,  H01L33/285 ,  H01L35/12 ,  H01L35/20 ,  H01L35/22 ,  H01L35/26

摘要： A thermoelectric material having a high ZT value is provided. In general, the thermoelectric material is a thin film thermoelectric material that includes a heterostructure formed of IV-VI semiconductor materials, where the heterostructure includes at least one potential barrier layer. In one embodiment, the heterostructure is formed of IV-VI semiconductor materials and includes a first matrix material layer, a potential barrier material layer adjacent to the first matrix material layer and formed of a wide bandgap material, and a second matrix material layer that is adjacent the potential barrier material layer opposite the first matrix material layer. A thickness of the potential barrier layer is approximately equal to a mean free path distance for charge carriers at a desired temperature.

摘要翻译： 提供具有高ZT值的热电材料。 通常，热电材料是包括由IV-VI半导体材料形成的异质结构的薄膜热电材料，其中异质结构包括至少一个势垒层。 在一个实施例中，异质结构由IV-VI半导体材料形成，并且包括第一基体材料层，与第一基质材料层相邻并由宽带隙材料形成的势垒材料层，以及第二基质材料层， 邻近与第一基质材料层相对的势垒材料层。 势垒层的厚度近似等于在期望温度下载流子的平均自由程距离。

公开(公告)号：US20130009132A1

公开(公告)日：2013-01-10

申请号：US13537164

申请日：2012-06-29

申请人： Patrick John McCann

发明人： Patrick John McCann

IPC分类号： H01L29/15

CPC分类号： H01L35/16 ,  H01L29/152 ,  H01L35/26

摘要： Embodiments of a material having low cross-plane thermal conductivity are provided. Preferably, the material is a thermoelectric material. In general, the thermoelectric material is designed to block phonons, which reduces or eliminates heat transport due to lattice vibrations and thus cross-plane thermal conductivity. By reducing the thermal conductivity of the thermoelectric material, a figure-of-merit (ZT) of the thermoelectric material is improved. In one embodiment, the thermoelectric material includes multiple superlattice periods that block, or reflect, multiple phonon wavelengths.

摘要翻译： 提供具有低横截面导热性的材料的实施例。 优选地，该材料是热电材料。 通常，热电材料被设计成阻挡声子，这减少或消除了由于晶格振动导致的热传递，从而减少了交叉平面导热性。 通过降低热电材料的热导率，提高了热电材料的品质因数（ZT）。 在一个实施例中，热电材料包括阻挡或反射多个声子波长的多个超晶格周期。

公开(公告)号：US20110241153A1

公开(公告)日：2011-10-06

申请号：US12898218

申请日：2010-10-05

申请人： Patrick John McCann

发明人： Patrick John McCann

IPC分类号： H01L29/66 ,  H01L21/28

CPC分类号： H01L35/34 ,  H01L35/08

摘要： Methods of fabrication of a thermoelectric module from thin film thermoelectric material are disclosed. In general, a thin film thermoelectric module is fabricated by first forming an N-type thin film thermoelectric material layer and one or more metallization layers on a substrate. The one or more metallization layers and the N-type thin film thermoelectric material layer are etched to form a number of N-type thermoelectric material legs. A first electrode assembly is then bonded to a first portion of the N-type thermoelectric material legs, and the first electrode assembly including the first portion of the N-type thermoelectric material legs is removed from the substrate. In a similar manner, a second electrode assembly is bonded to a first portion of a number of P-type thermoelectric material legs. The first and second electrode assemblies are then bonded using a flip-chip bonding process to complete the fabrication of the thermoelectric module.

摘要翻译： 公开了从薄膜热电材料制造热电模块的方法。 通常，通过在衬底上首先形成N型薄膜热电材料层和一个或多个金属化层来制造薄膜热电模块。 蚀刻一个或多个金属化层和N型薄膜热电材料层以形成多个N型热电材料支脚。 然后将第一电极组件接合到N型热电材料支脚的第一部分，并且包括N型热电材料支脚的第一部分的第一电极组件从基板移除。 以类似的方式，第二电极组件结合到多个P型热电材料支脚的第一部分。 然后使用倒装芯片接合工艺来接合第一和第二电极组件，以完成热电模块的制造。

公开(公告)号：US20120217548A1

公开(公告)日：2012-08-30

申请号：US13404548

申请日：2012-02-24

申请人： Allen L. Gray ,  Robert Joseph Therrien ,  Patrick John McCann

发明人： Allen L. Gray ,  Robert Joseph Therrien ,  Patrick John McCann

IPC分类号： H01L29/267 ,  H01L21/20

CPC分类号： H01L29/155 ,  H01L29/26

摘要： Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

摘要翻译： 公开了薄膜异质结构热电材料的实施例及其制造方法。 通常，热电材料以IIa和IV-VI族材料体系形成。 热电材料包括外延异质结构，通过外延异质结构的适当工程和明智优化，在宽温度范围内，以塞贝克系数，导电率和热导率表现出高的热泵浦和品质因数性能。

公开(公告)号：US20120216848A1

公开(公告)日：2012-08-30

申请号：US13416246

申请日：2012-03-09

申请人： Allen L. Gray ,  Robert Joseph Therrien ,  Patrick John McCann

发明人： Allen L. Gray ,  Robert Joseph Therrien ,  Patrick John McCann

IPC分类号： H01L35/16 ,  H01L35/22

CPC分类号： H01L29/155 ,  H01L29/26

摘要： Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

公开(公告)号：US08216871B2

公开(公告)日：2012-07-10

申请号：US12898218

申请日：2010-10-05

申请人： Patrick John McCann

发明人： Patrick John McCann

IPC分类号： H01L21/00

CPC分类号： H01L35/34 ,  H01L35/08

摘要： Methods of fabrication of a thermoelectric module from thin film thermoelectric material are disclosed. In general, a thin film thermoelectric module is fabricated by first forming an N-type thin film thermoelectric material layer and one or more metallization layers on a substrate. The one or more metallization layers and the N-type thin film thermoelectric material layer are etched to form a number of N-type thermoelectric material legs. A first electrode assembly is then bonded to a first portion of the N-type thermoelectric material legs, and the first electrode assembly including the first portion of the N-type thermoelectric material legs is removed from the substrate. In a similar manner, a second electrode assembly is bonded to a first portion of a number of P-type thermoelectric material legs. The first and second electrode assemblies are then bonded using a flip-chip bonding process to complete the fabrication of the thermoelectric module.

摘要翻译： 公开了从薄膜热电材料制造热电模块的方法。 通常，通过在衬底上首先形成N型薄膜热电材料层和一个或多个金属化层来制造薄膜热电模块。 蚀刻一个或多个金属化层和N型薄膜热电材料层以形成多个N型热电材料支脚。 然后将第一电极组件接合到N型热电材料支脚的第一部分，并且包括N型热电材料支脚的第一部分的第一电极组件从基板移除。 以类似的方式，第二电极组件结合到多个P型热电材料支脚的第一部分。 然后使用倒装芯片接合工艺来接合第一和第二电极组件，以完成热电模块的制造。

公开(公告)号：US20120055528A1

公开(公告)日：2012-03-08

申请号：US12748531

申请日：2010-03-29

申请人： Patrick John McCann

发明人： Patrick John McCann

IPC分类号： H01L35/16 ,  H01L35/00

CPC分类号： H01L35/16 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/26 ,  H01L33/06 ,  H01L33/285 ,  H01L35/12 ,  H01L35/20 ,  H01L35/22 ,  H01L35/26

摘要： A thermoelectric material having a high ZT value is provided. In general, the thermoelectric material is a thin film thermoelectric material that includes a heterostructure formed of IV-VI semiconductor materials, where the heterostructure includes at least one potential barrier layer. In one embodiment, the heterostructure is formed of IV-VI semiconductor materials and includes a first matrix material layer, a potential barrier material layer adjacent to the first matrix material layer and formed of a wide bandgap material, and a second matrix material layer that is adjacent the potential barrier material layer opposite the first matrix material layer. A thickness of the potential barrier layer is approximately equal to a mean free path distance for charge carriers at a desired temperature.

摘要翻译： 提供具有高ZT值的热电材料。 通常，热电材料是包括由IV-VI半导体材料形成的异质结构的薄膜热电材料，其中异质结构包括至少一个势垒层。 在一个实施例中，异质结构由IV-VI半导体材料形成，并且包括第一基体材料层，与第一基质材料层相邻并由宽带隙材料形成的势垒材料层，以及第二基质材料层， 邻近与第一基质材料层相对的势垒材料层。 势垒层的厚度近似等于在期望温度下载流子的平均自由程距离。