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公开(公告)号:US20160368103A1
公开(公告)日:2016-12-22
申请号:US15109115
申请日:2014-01-16
申请人: Ormet Circuitd, Inc.
发明人: Catherine A Shearer
IPC分类号: B23K35/26 , B23K35/362 , B23K35/36 , B23K35/02 , B23K35/30
CPC分类号: B23K35/262 , B23K35/0244 , B23K35/025 , B23K35/26 , B23K35/264 , B23K35/266 , B23K35/268 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K35/3026 , B23K35/3033 , B23K35/3612 , B23K35/362 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05639 , H01L2224/27312 , H01L2224/27318 , H01L2224/2732 , H01L2224/2741 , H01L2224/27418 , H01L2224/2929 , H01L2224/29294 , H01L2224/29301 , H01L2224/29305 , H01L2224/29309 , H01L2224/29311 , H01L2224/29313 , H01L2224/29314 , H01L2224/29316 , H01L2224/29317 , H01L2224/29318 , H01L2224/2932 , H01L2224/29324 , H01L2224/29338 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29349 , H01L2224/29355 , H01L2224/29357 , H01L2224/2936 , H01L2224/29364 , H01L2224/29369 , H01L2224/29373 , H01L2224/2938 , H01L2224/29384 , H01L2224/29386 , H01L2224/29411 , H01L2224/29424 , H01L2224/29438 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29449 , H01L2224/29455 , H01L2224/29457 , H01L2224/2946 , H01L2224/29464 , H01L2224/29469 , H01L2224/29473 , H01L2224/2948 , H01L2224/29484 , H01L2224/29486 , H01L2224/2949 , H01L2224/29499 , H01L2224/3201 , H01L2224/32145 , H01L2224/32225 , H01L2224/325 , H01L2224/83075 , H01L2224/83191 , H01L2224/83192 , H01L2224/832 , H01L2224/83203 , H01L2224/8321 , H01L2224/83439 , H01L2224/83825 , H01L2224/8384 , H05K3/3463 , H01L2924/00014 , H01L2924/01004 , H01L2924/01052 , H01L2924/0108 , H01L2924/01034 , H01L2924/01084 , H01L2924/01048 , H01L2924/01049 , H01L2924/01058 , H01L2924/01047 , H01L2924/01029 , H01L2924/01051 , H01L2924/01083 , H01L2924/00012
摘要: Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.
摘要翻译: 本发明组合物是在高工作温度和步骤焊接应用中替代高熔点温度的焊膏和预制件。 在本发明的使用中,金属粉末的混合物在350摄氏度以下反应,形成不会在原始工艺温度下重熔的致密金属接头。
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公开(公告)号:US20160151864A1
公开(公告)日:2016-06-02
申请号:US15017755
申请日:2016-02-08
发明人: Louis P. Rector , Harry Richard Kuder , Juliet Grace Sanchez , Albert P. Perez , Kathryn Bearden
IPC分类号: B23K35/30 , B23K35/362 , B23K35/26 , C22C38/52 , C22C9/00 , C22C38/04 , C22C38/02 , C22C38/00 , C22C13/00 , C22C5/06 , B23K35/02 , C22C38/06
CPC分类号: B23K35/3006 , B22F1/0025 , B22F1/0059 , B22F3/10 , B22F3/1003 , B22F3/1035 , B22F3/23 , B22F7/08 , B23K35/0233 , B23K35/262 , B23K35/302 , B23K35/3066 , B23K35/362 , B82Y30/00 , C22C1/0491 , C22C5/06 , C22C9/00 , C22C13/00 , C22C26/00 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/52 , C22C49/12 , C22C2026/002 , C23C24/106 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/2711 , H01L2224/2929 , H01L2224/29309 , H01L2224/29311 , H01L2224/29313 , H01L2224/29318 , H01L2224/2932 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29349 , H01L2224/29355 , H01L2224/29357 , H01L2224/2936 , H01L2224/29364 , H01L2224/29369 , H01L2224/29371 , H01L2224/29372 , H01L2224/2938 , H01L2224/29384 , H01L2224/29386 , H01L2224/29393 , H01L2224/29409 , H01L2224/29411 , H01L2224/29413 , H01L2224/29418 , H01L2224/2942 , H01L2224/29424 , H01L2224/29439 , H01L2224/29447 , H01L2224/29449 , H01L2224/29455 , H01L2224/29457 , H01L2224/2946 , H01L2224/29464 , H01L2224/29469 , H01L2224/29471 , H01L2224/29472 , H01L2224/2948 , H01L2224/29484 , H01L2224/29499 , H01L2224/32225 , H01L2224/83101 , H01L2224/83192 , H01L2224/83825 , H01L2224/8384
摘要: A sintering film comprising one or more metals, one or more metal alloys, or blends of one or more metals and one or more metal alloys, is prepared optionally using a solid or semi-solid organic binder. The organic binder can have fluxing functionality; the organic binder can be one that will partially or completely decompose upon sintering of the metal or metal alloy in the composition. In one embodiment, the sintering film is provided on an end use substrate, such as a silicon die or wafer, or a metal circuit board or foil, or the sintering film is provided on a carrier, such as a metal mesh. Preparation is accomplished by dispersing the metal or metal alloy in a suitable solvent, with or without a binder, and exposing the composition to high temperature to evaporate off the solvent and partially sinter the metal or metal alloy.
摘要翻译: 任选使用固体或半固体有机粘合剂制备包含一种或多种金属,一种或多种金属合金或一种或多种金属和一种或多种金属合金的共混物的烧结膜。 有机粘合剂可具有助熔功能; 有机粘合剂可以是在组合物中金属或金属合金烧结时部分或完全分解的有机粘合剂。 在一个实施例中,烧结膜设置在诸如硅晶片或晶片的终端使用基板或金属电路板或箔上,或者烧结膜设置在诸如金属网的载体上。 通过将金属或金属合金分散在具有或不具有粘合剂的合适溶剂中并将组合物暴露于高温以蒸发掉溶剂并部分烧结金属或金属合金来实现制备。
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公开(公告)号:US08912047B2
公开(公告)日:2014-12-16
申请号:US13110653
申请日:2011-05-18
CPC分类号: C23C4/005 , C23C4/01 , C23C4/08 , C23C4/134 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/741 , H01L24/743 , H01L24/83 , H01L24/85 , H01L2224/03332 , H01L2224/03442 , H01L2224/04026 , H01L2224/04042 , H01L2224/05824 , H01L2224/05847 , H01L2224/05939 , H01L2224/05944 , H01L2224/05966 , H01L2224/05979 , H01L2224/0598 , H01L2224/05981 , H01L2224/0603 , H01L2224/27442 , H01L2224/29082 , H01L2224/292 , H01L2224/29324 , H01L2224/29347 , H01L2224/29439 , H01L2224/29444 , H01L2224/29466 , H01L2224/29479 , H01L2224/2948 , H01L2224/29481 , H01L2224/32245 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8382 , H01L2224/85 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/83205 , H01L2924/00012
摘要: A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation.
摘要翻译: 一种方法在半导体衬底上产生金属层。 通过沉积金属颗粒在半导体衬底上产生金属层。 金属颗粒包括由第一金属材料制成的芯和围绕芯的壳。 壳体由耐氧化的第二金属材料制成。
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公开(公告)号:US20110115078A1
公开(公告)日:2011-05-19
申请号:US12906348
申请日:2010-10-18
申请人: Se-Young JEONG , Nam-Seog Kim
发明人: Se-Young JEONG , Nam-Seog Kim
IPC分类号: H01L23/48
CPC分类号: H05K3/323 , H01L24/13 , H01L24/81 , H01L24/83 , H01L24/91 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/1318 , H01L2224/16225 , H01L2224/2929 , H01L2224/2939 , H01L2224/29444 , H01L2224/29455 , H01L2224/29457 , H01L2224/2946 , H01L2224/2948 , H01L2224/2949 , H01L2224/2989 , H01L2224/32225 , H01L2224/73204 , H01L2224/81903 , H01L2224/83851 , H01L2224/9211 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0781 , H01L2924/07811 , H01L2924/15311 , H05K2201/083 , H05K2201/10674 , H05K2203/104 , H01L2924/00 , H01L2924/00014
摘要: A flip chip package may include a semiconductor chip, a package substrate, a conductive magnetic bump and an anisotropic conductive member. The semiconductor chip may have a first pad. The package substrate may have a second pad confronting the first pad. The conductive magnetic bump may be interposed between the semiconductor chip and the package substrate to generate a magnetic force. The anisotropic conductive member may be arranged between the semiconductor chip and the package substrate. The anisotropic conductive member may have conductive magnetic particles induced toward the conductive magnetic bump by the magnetic force to electrically connect the first pad with the second pad. A predetermined number of the conductive magnetic particles may be positioned between the conductive magnetic bump and the pad, so that an electrical connection reliability between the pads may be increased.
摘要翻译: 倒装芯片封装可以包括半导体芯片,封装基板,导电磁性凸块和各向异性导电构件。 半导体芯片可以具有第一焊盘。 封装基板可以具有面对第一焊盘的第二焊盘。 导电磁性凸块可以插入在半导体芯片和封装基板之间以产生磁力。 各向异性导电构件可以布置在半导体芯片和封装衬底之间。 各向异性导电构件可以具有通过磁力向导电磁性凸块引起的导电磁性颗粒,以将第一衬垫与第二衬垫电连接。 预定数量的导电磁性颗粒可以位于导电磁性凸块和焊盘之间,从而可以增加焊盘之间的电连接可靠性。
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公开(公告)号:US20240182757A1
公开(公告)日:2024-06-06
申请号:US18074079
申请日:2022-12-02
申请人: Wolfspeed, Inc.
CPC分类号: C09J9/02 , C09J1/00 , H01L24/29 , H01L24/32 , H01L2224/2929 , H01L2224/29294 , H01L2224/29311 , H01L2224/29324 , H01L2224/29347 , H01L2224/29355 , H01L2224/29439 , H01L2224/29444 , H01L2224/29457 , H01L2224/29464 , H01L2224/2948 , H01L2224/29484 , H01L2224/32225 , H01L2224/32503
摘要: Die-attach materials are provided. In one example, the die-attach material may include a plurality of core-shell particles. Each core-shell particle may include a core and a shell on the core. The core may include a conducting material. The shell may include an alloy. The alloy may include a first element and a second element. The second element may segregate into one or more grain boundaries in the die-attach material during bonding of the die-attach material.
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公开(公告)号:US20120292773A1
公开(公告)日:2012-11-22
申请号:US13110653
申请日:2011-05-18
IPC分类号: H01L23/52 , H01L21/768 , H01L23/532 , H01L21/78
CPC分类号: C23C4/005 , C23C4/01 , C23C4/08 , C23C4/134 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/741 , H01L24/743 , H01L24/83 , H01L24/85 , H01L2224/03332 , H01L2224/03442 , H01L2224/04026 , H01L2224/04042 , H01L2224/05824 , H01L2224/05847 , H01L2224/05939 , H01L2224/05944 , H01L2224/05966 , H01L2224/05979 , H01L2224/0598 , H01L2224/05981 , H01L2224/0603 , H01L2224/27442 , H01L2224/29082 , H01L2224/292 , H01L2224/29324 , H01L2224/29347 , H01L2224/29439 , H01L2224/29444 , H01L2224/29466 , H01L2224/29479 , H01L2224/2948 , H01L2224/29481 , H01L2224/32245 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8382 , H01L2224/85 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/83205 , H01L2924/00012
摘要: A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation.
摘要翻译: 一种方法在半导体衬底上产生金属层。 通过沉积金属颗粒在半导体衬底上产生金属层。 金属颗粒包括由第一金属材料制成的芯和围绕芯的壳。 壳体由耐氧化的第二金属材料制成。
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