公开(公告)号：US09385103B2

公开(公告)日：2016-07-05

申请号：US14251115

申请日：2014-04-11

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Shinji Sano ,  Tatsuo Nishizawa

IPC: B23K31/00 ,  B23K31/02 ,  H01L23/00

CPC classification number: H01L24/75 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/26175 ,  H01L2224/29007 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/292 ,  H01L2224/29299 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/75303 ,  H01L2224/7531 ,  H01L2224/75705 ,  H01L2224/83065 ,  H01L2224/83101 ,  H01L2224/83209 ,  H01L2224/83385 ,  H01L2224/83815 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/3511 ,  H01L2924/01051 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for manufacturing a semiconductor device, includes preparing a solder, a soldering article, a base material, a weight having a foot where a center of gravity of the weight is shifted from a center of the soldering article, a positioning jig having a hole for holding the soldering article in the base material, and a dam member; disposing the dam member on a side having a relatively lower height due to a warp of an edge portion of the base material; placing the positioning jig on a principal surface of the base material; placing the soldering article on the solder in the hole; placing the weight on an upper surface of the soldering article to position the center of gravity on the side having relatively lower height; and raising the temperature of the solder to a temperature equal to or higher than the melting point of the solder.

Abstract translation: 一种制造半导体器件的方法，包括制备焊料，焊接制品，基底材料，具有重量的重心从重量的重心偏离焊接制品的中心的重物，具有孔的定位夹具 用于将所述焊接物保持在所述基材中，以及坝构件; 由于基材的边缘部分的翘曲，将阻挡构件设置在具有较低高度的一侧上; 将定位夹具放置在基材的主表面上; 将焊接物品放置在孔中的焊料上; 将重物放置在焊接制品的上表面上，以将重心定位在具有较低高度的一侧上; 并将焊料的温度提高到等于或高于焊料熔点的温度。

公开(公告)号：US20140287239A1

公开(公告)日：2014-09-25

申请号：US14215597

申请日：2014-03-17

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giovanni Scurati ,  Laura Ceriati ,  Luciano Benini

IPC: H01L23/373 ,  B29C65/48 ,  B29C65/54

CPC classification number: H01L23/3733 ,  B29C65/4855 ,  B29C65/4865 ,  B29C65/54 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L23/373 ,  H01L23/42 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/29082 ,  H01L2224/29099 ,  H01L2224/29193 ,  H01L2224/292 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32221 ,  H01L2224/32245 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/94 ,  H01L2924/13055 ,  H01L2924/13091 ,  Y10T428/30 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/014

Abstract: An integrated circuit chip attachment in a microstructure device is accomplished through the use of an adhesive-based material in which graphene flakes are incorporated. This results in superior thermal conductivity. The spatial orientation of the graphene flakes is controlled, for example by adhering polar molecules to the graphene flakes and exposing the flakes to an external force field, so that the graphene flakes have desired orientations under the integrated circuit chip, alongside of the integrated circuit chip and above the integrated circuit chip.

Abstract translation: 微结构器件中的集成电路芯片附件通过使用其中掺入石墨烯薄片的基于粘合剂的材料来实现。 这导致优异的导热性。 控制石墨烯薄片的空间取向，例如通过将极性分子粘附到石墨烯薄片上并将薄片暴露于外部力场，使得石墨烯薄片在集成电路芯片的下方具有期望的取向，并且与集成电路芯片 以上集成电路芯片。

公开(公告)号：US20100068552A1

公开(公告)日：2010-03-18

申请号：US12622203

申请日：2009-11-19

Applicant: Jens Goerlich ,  Karsten Guth ,  Olaf Hohlfeld

Inventor： Jens Goerlich ,  Karsten Guth ,  Olaf Hohlfeld

IPC: B32B15/01 ,  B23K35/28

CPC classification number: H05K3/341 ,  C04B37/021 ,  C04B37/026 ,  C04B2235/963 ,  C04B2237/12 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/405 ,  C04B2237/407 ,  C04B2237/408 ,  C04B2237/64 ,  C04B2237/72 ,  C22C13/00 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/292 ,  H01L2224/29211 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/3463 ,  H05K3/382 ,  H05K2201/0215 ,  Y02P70/613 ,  Y10T428/12493 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2924/014 ,  H01L2924/01047

Abstract: A solder includes a soft solder having a melting point less than 450° C. and particles embedded in the soft solder. Each particle has a maximum length greater than 50 μm. The particles comprise greater than 10 Vol % and less than 60 Vol % of the solder.

Abstract translation: 焊料包括熔点低于450℃的软焊料和嵌入软焊料中的颗粒。 每个颗粒的最大长度大于50μm。 该颗粒包含大于10vol％且小于60vol％的焊料。

公开(公告)号：US07368824B2

公开(公告)日：2008-05-06

申请号：US10927621

申请日：2004-08-27

Applicant: Khalil Hosseini ,  Edmund Riedl

Inventor： Khalil Hosseini ,  Edmund Riedl

IPC: H01L21/31

CPC classification number: H01L24/29 ,  B23K1/0016 ,  B23K1/20 ,  B23K35/025 ,  B23K35/26 ,  B23K35/262 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K2101/40 ,  H01L24/27 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/292 ,  H01L2224/29211 ,  H01L2224/29299 ,  H01L2224/29387 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/2929

Abstract: A diffusion solder position between two parts has intermetallic phases formed by two solder components. Nanoparticles of a filler material are three-dimensionally distributed in its diffusion region in addition to the intermetallic phases. Furthermore, a process for producing the diffusion solder position and for producing an electronic power component, which has a plurality of diffusion solder positions, is provided.

Abstract translation: 两个部件之间的扩散焊料位置由两个焊料部件形成金属间相。 填充材料的纳米颗粒除了金属间相以外还在其扩散区域中三维分布。 此外，提供了具有多个扩散焊料位置的用于制造扩散焊料位置和用于制造电子功率部件的工艺。

公开(公告)号：US20060061974A1

公开(公告)日：2006-03-23

申请号：US10451610

申请日：2001-12-19

Applicant: Tasao Soga ,  Hanae Hata ,  Toshiharu Ishida ,  Kanko Ishida ,  Tetsuya Nakatsuka ,  Masahide Okamoto ,  Kazuma Miura

Inventor： Tasao Soga ,  Hanae Hata ,  Toshiharu Ishida ,  Kanko Ishida ,  Tetsuya Nakatsuka ,  Masahide Okamoto ,  Kazuma Miura

IPC: H05K1/16 ,  H01L23/48 ,  H05K1/14

CPC classification number: H01L24/01 ,  B23K3/063 ,  B23K2101/40 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29076 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/292 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K3/3478 ,  H05K2201/0215 ,  H05K2203/0143 ,  H05K2203/0278 ,  H05K2203/0405 ,  H05K2203/0425 ,  Y10T428/12528 ,  Y10T428/12708 ,  Y10T428/12903 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01031 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298

Abstract: A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and electronic devices produced by use of such solder bonding have distinguished reliability of mechanical characteristics, etc.

Abstract translation: 由包含作为金属颗粒的Cu等颗粒和作为焊料颗粒的Sn颗粒通过轧制形成的焊料箔适用于在温度分级粘合中的高温侧的焊接，以及通过使用制造的半导体器件和电子器件 这种焊接结合具有突出的机械特性的可靠性等。

公开(公告)号：US09824994B2

公开(公告)日：2017-11-21

申请号：US14924194

申请日：2015-10-27

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Takuya Kadoguchi

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/48 ,  H01L23/492 ,  H01L23/488 ,  H01L23/495 ,  H01L23/433

CPC classification number: H01L24/32 ,  H01L21/4853 ,  H01L23/4334 ,  H01L23/488 ,  H01L23/4924 ,  H01L23/49537 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/29 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05655 ,  H01L2224/292 ,  H01L2224/29211 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32505 ,  H01L2224/33181 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83815 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01015 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/01047

Abstract: A semiconductor device includes: a semiconductor element; a joined member that is joined to the semiconductor element and includes a nickel film; and a joining layer that is joined to the joined member and contains 2.0 wt % or higher of copper, in which the joining layer includes a solder portion and a Cu6Sn5 portion, base metal of the solder portion contains at least tin as a constituent element and contains elemental copper, and the Cu6Sn5 portion is in contact with the nickel film.

公开(公告)号：US09812374B1

公开(公告)日：2017-11-07

申请号：US15466495

申请日：2017-03-22

Applicant: Xilinx, Inc.

Inventor： Gamal Refai-Ahmed ,  Suresh Ramalingam ,  Brian D. Philofsky

IPC: H01L23/12 ,  H01L21/00 ,  H05K7/20 ,  H01L23/367 ,  H01L23/427 ,  H01L25/065 ,  H01L23/373 ,  H01L21/48

CPC classification number: H01L23/3675 ,  H01L21/4882 ,  H01L23/10 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/427 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0655 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/292 ,  H01L2224/29224 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/3511

Abstract: Methods and apparatus are described for heat management in an integrated circuit (IC) package using a device with a textured surface having multiple grooves in an otherwise relatively flat surface. The textured surface of the heat management device is designed, in conjunction with a thermal interface material (TIM), to push gas bubbles out of the flat areas such that the gas bubbles are trapped in the grooves or driven out of the interface between the device and the TIM altogether. The area of the grooves is small relative to the ungrooved areas (i.e., the flat areas), such that when the gas bubbles are trapped in the grooved areas, the ungrooved areas work even better for heat transfer. With the area of the regions for the flat portions being substantially greater than the area of the regions for the grooves, the textured heat management device is designed to lower thermal resistance, increase thermal conductivity, and increase heat transfer from one or more IC dies to a heat sink assembly in an IC package.

公开(公告)号：US08918752B2

公开(公告)日：2014-12-23

申请号：US13326301

申请日：2011-12-14

Applicant: Alex Chow ,  Robert J. Drost ,  Ronald Ho ,  Robert D. Hopkins ,  Ivan E. Sutherland

Inventor： Alex Chow ,  Robert J. Drost ,  Ronald Ho ,  Robert D. Hopkins ,  Ivan E. Sutherland

IPC: G06F17/50

CPC classification number: H01L23/585 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/72 ,  H01L25/0657 ,  H01L2224/13021 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/292 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/83851 ,  H01L2225/06531 ,  H01L2225/06593 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A semiconductor die is described. This semiconductor die includes a driver, and a spatial alignment transducer that is electrically coupled to the driver and which is proximate to a surface of the semiconductor die. The driver establishes a spatially varying electric charge distribution in at least one direction in the spatial alignment transducer, thereby facilitating determination of a spatial alignment in more than one direction between the semiconductor die and another semiconductor die. In particular, a spatial alignment sensor proximate to the surface of the other semiconductor die may detect an electrical field (or an associated electrostatic potential) associated with the spatially varying electric charge distribution. This detected electric field may allow the vertical spacing between the surfaces of the semiconductor dies and/or an angular alignment of the semiconductor dies to be determined.

Abstract translation: 描述半导体管芯。 该半导体管芯包括驱动器和电耦合到驱动器并且靠近半导体管芯的表面的空间对准换能器。 驱动器在空间对准转换器中在至少一个方向上建立空间变化的电荷分布，从而有助于确定半导体管芯和另一个半导体管芯之间的多于一个方向上的空间对准。 特别地，靠近另一个半导体管芯的表面的空间对准传感器可以检测与空间变化的电荷分布相关联的电场（或相关的静电电位）。 该检测的电场可以允许确定半导体管芯的表面之间的垂直间隔和/或半导体管芯的角度对准。

公开(公告)号：US20130154608A1

公开(公告)日：2013-06-20

申请号：US13326301

申请日：2011-12-14

Applicant: Alex Chow ,  Robert J. Drost ,  Ronald Ho ,  Robert D. Hopkins ,  Ivan E. Sutherland

Inventor： Alex Chow ,  Robert J. Drost ,  Ronald Ho ,  Robert D. Hopkins ,  Ivan E. Sutherland

IPC: G01N27/00 ,  H01L23/58

CPC classification number: H01L23/585 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/72 ,  H01L25/0657 ,  H01L2224/13021 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/292 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/83851 ,  H01L2225/06531 ,  H01L2225/06593 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A semiconductor die is described. This semiconductor die includes a driver, and a spatial alignment transducer that is electrically coupled to the driver and which is proximate to a surface of the semiconductor die. The driver establishes a spatially varying electric charge distribution in at least one direction in the spatial alignment transducer, thereby facilitating determination of a spatial alignment in more than one direction between the semiconductor die and another semiconductor die. In particular, a spatial alignment sensor proximate to the surface of the other semiconductor die may detect an electrical field (or an associated electrostatic potential) associated with the spatially varying electric charge distribution. This detected electric field may allow the vertical spacing between the surfaces of the semiconductor dies and/or an angular alignment of the semiconductor dies to be determined.

Abstract translation: 描述半导体管芯。 该半导体管芯包括驱动器和电耦合到驱动器并且靠近半导体管芯的表面的空间对准换能器。 驱动器在空间对准转换器中在至少一个方向上建立空间变化的电荷分布，从而有助于确定半导体管芯和另一个半导体管芯之间的多于一个方向上的空间对准。 特别地，靠近另一个半导体管芯的表面的空间对准传感器可以检测与空间变化的电荷分布相关联的电场（或相关的静电电位）。 该检测的电场可以允许确定半导体管芯的表面之间的垂直间隔和/或半导体管芯的角度对准。

公开(公告)号：US20100276474A1

公开(公告)日：2010-11-04

申请号：US12837574

申请日：2010-07-16

Applicant: Lakshmi Supriya ,  Daewoong Suh

Inventor： Lakshmi Supriya ,  Daewoong Suh

IPC: B23K31/02 ,  B23K20/24

CPC classification number: H05K3/321 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/292 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H05K3/102 ,  H05K2203/1131 ,  H05K2203/122 ,  Y10T428/12111 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/256 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

Abstract: A method of forming an interconnect joint includes providing a first metal layer (210, 310), providing a film (220, 320) including metal particles (221, 321) and organic molecules (222, 322), placing the film over the first metal layer, placing a second metal layer (230, 330) over the film, and sintering the metal particles such that the organic molecules degrade and the first metal layer and the second metal layer are joined together.

Abstract translation: 形成互连接头的方法包括提供第一金属层（210,310），提供包括金属颗粒（221,321）和有机分子（222,322）的膜（220,320），将膜放置在第一 金属层，在膜上放置第二金属层（230,330），并烧结金属颗粒使得有机分子降解，并且第一金属层和第二金属层接合在一起。