摘要:
Described herein are devices and techniques for thermocompression bonding. A device can include a housing, a platform, and a plasma jet. The housing can define a chamber. The platform can be located within the chamber and can be proximate a thermocompression chip bonder. The plasma jet can be located proximate the platform. The plasma jet can be movable about the platform. The plasma jet can include a nozzle arranged to direct a plasma gas onto the platform. Also described are other embodiments for thermocompression bonding.
摘要:
A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.
摘要:
In an exemplary implementation, a system for producing an electrical module includes a pressure chamber configured to receive a first body, a second body, and a sinter material therebetween. The system further includes a pressure generator configured to apply non-mechanical pressure in the pressure chamber to form the electrical module by attaching the first body to the second body using the sinter material. The pressure chamber is configured to enclose the first body over the second body. Furthermore, the pressure chamber includes a bottom opening configured to receive at least the first body. The non-mechanical pressure can include gas pressure.
摘要:
A process for fabricating an electronic component includes a liquid injection molding method for overmolding a semiconductor device. The liquid injection molding method includes: i) placing the semiconductor device in an open mold, ii) closing the mold to form a mold cavity, iii) heating the mold cavity, iv) injection molding a curable liquid into the mold cavity to overmold the semiconductor device, v) opening the mold and removing the product of step iv), and optionally vi) post-curing the product of step v). The semiconductor device may have an integrated circuit attached to a substrate through a die attach adhesive.
摘要:
It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.
摘要:
A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.
摘要:
The present invention provides a method and apparatus for a programmable capacitor associated with an input/output pad in the semiconductor device. The apparatus includes a semiconductor die having an upper surface, a first capacitor deployed above the upper surface of the semiconductor die, a separation layer deployed above the first capacitor, and a bond pad deployed above the separation layer such that at least a portion of the bond pad lies above the first capacitor.
摘要:
It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.
摘要:
It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.
摘要:
An integrated circuit includes N plane-like metal layers. A first plane-like metal layer includes M contact portions that communicate with respective ones of the N plane-like metal layers, where M is an integer greater than one, wherein the first plane-like metal layer and the N plane-like metal layers are located in separate planes. A first drain region has a generally rectangular shape. First, second, third and fourth source regions have a generally rectangular shape and that are arranged adjacent to sides of the first drain region. The first drain region and the first, second, third and fourth source regions communicate with at least two of the N plane-like metal layers. A first gate region is arranged between the first, second, third and fourth source regions and the first drain region. First, second, third and fourth substrate contact regions are arranged adjacent to corners of the first drain region.