公开(公告)号：US12115754B2

公开(公告)日：2024-10-15

申请号：US17776157

申请日：2020-11-26

Applicant: DIC Corporation

Inventor： Takamichi Aoki ,  Tomomichi Kanda

IPC: B32B15/08 ,  B32B3/00 ,  B32B3/30 ,  B32B15/085 ,  B32B27/20 ,  C08G75/0204 ,  C08K3/26 ,  C08K7/02 ,  C08K7/14 ,  C08L23/00 ,  C08L77/10 ,  C08L81/02 ,  C08L91/06 ,  C08L101/00 ,  C23C18/16 ,  C23C18/20 ,  C23C18/24 ,  C23C30/00 ,  C25D5/56 ,  C25D3/38

CPC classification number: B32B15/08 ,  B32B3/00 ,  B32B3/30 ,  B32B15/085 ,  B32B27/20 ,  C08G75/0204 ,  C08K3/26 ,  C08K7/02 ,  C08K7/14 ,  C08L23/00 ,  C08L77/10 ,  C08L81/02 ,  C08L91/06 ,  C08L101/00 ,  C23C18/1641 ,  C23C18/1653 ,  C23C18/2066 ,  C23C18/24 ,  C23C30/00 ,  C25D5/56 ,  B32B2250/02 ,  B32B2264/104 ,  B32B2264/204 ,  B32B2264/302 ,  B32B2264/303 ,  B32B2457/00 ,  C08K2003/265 ,  C08K2003/267 ,  C08K2201/005 ,  C08L2201/08 ,  C08L2203/20 ,  C08L2203/30 ,  C08L2205/035 ,  C08L2207/04 ,  C25D3/38 ,  Y10T428/12007 ,  Y10T428/12451 ,  Y10T428/12472 ,  Y10T428/12556 ,  Y10T428/12562 ,  Y10T428/12569 ,  Y10T428/12701 ,  Y10T428/12736 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/12951 ,  C08K7/14 ,  C08L81/02 ,  C08K3/26 ,  C08L81/02

Abstract: Provided is a production method for a layered product in which a metal film can be formed on the surface of a polyarylene sulfide (PAS) molded article with a high adhesive force by a simple step. Further, provided are: a polyarylene sulfide resin composition and a molded article that can be used in the layered product in which a metal film can be formed on the surface of the PAS molded article with a high adhesive force by a simpler step; and production methods therefor. More specifically, provided are: a polyarylene sulfide resin composition obtained by blending a polyarylene sulfide resin, a thermoplastic elastomer and/or a hydrolyzable thermoplastic resin, a carbonate, and a polyolefin-based wax; a molded article which is obtained by melt-molding the polyarylene sulfide resin composition and in which the surface is roughened; a layered product having a metal plating layer; and production methods therefor.

公开(公告)号：US11795525B2

公开(公告)日：2023-10-24

申请号：US17438954

申请日：2020-03-25

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Naoki Miyashima ,  Takanori Kobayashi ,  Kazunari Maki ,  Shinichi Funaki ,  Hiroyuki Mori ,  Yuki Ito

IPC: C22C9/00 ,  C25D5/34 ,  B32B15/01 ,  B32B15/20 ,  C25D5/50

CPC classification number: C22C9/00 ,  B32B15/018 ,  B32B15/20 ,  C25D5/34 ,  C25D5/50 ,  Y10T428/12903

Abstract: To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less.

公开(公告)号：US20180257790A1

公开(公告)日：2018-09-13

申请号：US15973905

申请日：2018-05-08

Applicant: Dexmet Corporation

Inventor： Mohammed Salim Rahamat ,  Mark A. Murdoch ,  Kenneth William Burtt ,  Brett Alexander Macdonald

IPC: B64D45/02 ,  B26F1/02 ,  B23K26/38

CPC classification number: B64D45/02 ,  B23K26/082 ,  B23K26/38 ,  B23K26/384 ,  B23K26/40 ,  B23K2101/006 ,  B23K2101/18 ,  B23K2103/10 ,  B26F1/02 ,  B32B15/04 ,  B32B15/08 ,  B32B15/20 ,  C23C28/04 ,  C23C28/046 ,  C23C28/34 ,  C23C28/345 ,  C23C30/00 ,  C23C30/005 ,  C23C2222/20 ,  Y10T428/12361 ,  Y10T428/12368 ,  Y10T428/12431 ,  Y10T428/12438 ,  Y10T428/12569 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/1266 ,  Y10T428/12667 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/24273 ,  Y10T428/24281 ,  Y10T428/24289 ,  Y10T428/24298 ,  Y10T428/24306 ,  Y10T428/24314 ,  Y10T428/24388 ,  Y10T428/24413

Abstract: A metallic foil for lightning strike protection in a composite aerospace structure having a length, a width, and a thickness of not more than 30 microns. There are a plurality of pores of a predefined geometric shape extending through the thickness of the metallic foil and being distributed across a surface area defined by the length and the width of the metallic foil. The plurality of pores in the aggregate define an open area of not more than 40% of the surface area and the metallic foil has a weight of not more than 115 g/m2. The metallic foil has a weight to conductivity ratio of not more than 0.40 gram-ohms per square.

公开(公告)号：US20180154611A1

公开(公告)日：2018-06-07

申请号：US15661141

申请日：2017-07-27

Applicant: Government of the United States of America, as Represented by the Secretary of Treasury

Inventor： TSINENG TONY YING ,  RICHARD R. ROBIDOUX

IPC: B32B15/01 ,  C22C38/04 ,  C22C38/02 ,  C22C38/00 ,  C22C38/06 ,  C21D6/00 ,  C23C18/32

CPC classification number: B32B15/015 ,  B32B15/013 ,  B32B15/04 ,  B32B15/043 ,  B32B2255/06 ,  B32B2255/205 ,  C21D6/005 ,  C21D6/008 ,  C22C38/002 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C2202/02 ,  C23C18/32 ,  C23C30/00 ,  C23C30/005 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/12924 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12972 ,  Y10T428/12979 ,  Y10T428/12993 ,  Y10T428/24942 ,  Y10T428/26

Abstract: An alloy includes: steel; manganese; aluminum; and silicon in an amount such that the alloy has an electrical conductivity from 2% IACS to 6% IACS measured in accordance with ASTM E1004-09 (2009).

公开(公告)号：US20170216974A1

公开(公告)日：2017-08-03

申请号：US15515508

申请日：2016-05-19

Applicant: NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

Inventor： Takashi YAMADA ,  Daizo ODA ,  Teruo HAIBARA ,  Ryo OISHI ,  Kazuyuki SAITO ,  Tomohiro UNO

IPC: B23K35/02 ,  H01L23/00 ,  C22C9/04 ,  B23K35/30 ,  C22C9/06

CPC classification number: B23K35/0227 ,  B23K35/3013 ,  B23K35/302 ,  B23K2101/40 ,  B32B15/00 ,  B32B15/01 ,  B32B15/018 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  C23C30/00 ,  C23C30/005 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45118 ,  H01L2224/4512 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45178 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/78 ,  H01L2224/78251 ,  H01L2224/85 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/186 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/265 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01027 ,  H01L2924/01047 ,  H01L2924/01013

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 μm provides a strength ratio of 1.6 or less.

公开(公告)号：US09661770B2

公开(公告)日：2017-05-23

申请号：US13784746

申请日：2013-03-04

Applicant: Microsoft Technology Licensing, LLC

Inventor： Mark Thomas McCormack ,  Raj N. Master ,  Michael Joseph Lane ,  Krishna Darbha ,  Ralf Groene ,  James Alec Ishihara ,  Joshua James Fischer

IPC: H05K5/02 ,  B05D3/06 ,  C23C14/00 ,  C23C14/02 ,  C23C14/04 ,  C23C14/14 ,  C23C14/58 ,  B44C1/22 ,  G06F1/18 ,  B41M5/24

CPC classification number: H05K5/0252 ,  B05D3/06 ,  B41M5/24 ,  B44C1/228 ,  C23C14/00 ,  C23C14/0015 ,  C23C14/021 ,  C23C14/024 ,  C23C14/025 ,  C23C14/028 ,  C23C14/04 ,  C23C14/046 ,  C23C14/14 ,  C23C14/58 ,  G06F1/1656 ,  G06F1/181 ,  G06F3/0202 ,  Y10T428/12361 ,  Y10T428/12389 ,  Y10T428/12396 ,  Y10T428/12847 ,  Y10T428/12854 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/12944 ,  Y10T428/13 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265

Abstract: Techniques for graphic formation via material ablation described. In at least some implementations, a graphic is applied to a surface of an object by ablating layers of the object to form an ablation trench in the shape of the graphic. In at least some embodiments, an object can include a surface layer and multiple sublayers of materials. When an ablation trench is generated in the object, the ablation trench can penetrate a surface layer of the object and into an intermediate layer. In at least some implementations, height variations in an object surface caused by an ablation trench can cause variations in light reflection properties such that a graphic applied via the ablation trench appears at a different color tone than a surrounding surface, even if the ablation trench and the surrounding surface are coated with a same colored coating.

公开(公告)号：US20160369374A1

公开(公告)日：2016-12-22

申请号：US14898950

申请日：2014-02-20

Applicant: MITSUBISHI SHINDOH CO., LTD. ,  MITSUBISHI MATERIALS CORPORATION

Inventor： Kazunari MAKI ,  Hiroyuki MORI ,  Daiki YAMASHITA

IPC: C22C9/04 ,  H01B1/02 ,  B22D7/00 ,  C23C30/00 ,  C22F1/08 ,  C22C1/02

CPC classification number: C22C9/04 ,  B22D7/005 ,  C22C1/02 ,  C22F1/00 ,  C22F1/08 ,  C23C28/02 ,  C23C28/021 ,  C23C28/023 ,  C23C30/00 ,  C23C30/005 ,  H01B1/026 ,  Y10T428/12431 ,  Y10T428/12438 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265

Abstract: One aspect of this copper alloy for an electronic and electrical equipment contains: more than 2.0 mass % to 36.5 mass % of Zn; 0.10 mass % to 0.90 mass % of Sn; 0.15 mass % to less than 1.00 mass % of Ni; and 0.005 mass % to 0.100 mass % of P, with the balance containing Cu and inevitable impurities, wherein atomic ratios of amounts of elements satisfy 3.00

Abstract translation: 这种用于电子和电气设备的铜合金的一个方面包括：大于2.0质量％至36.5质量％的Zn; 0.10质量％〜0.90质量％的Sn; 0.15质量％〜小于1.00质量％的Ni; 和0.005质量％至0.100质量％的P，余量包含Cu和不可避免的杂质，其中元素的原子比满足3.00

公开(公告)号：US20160242281A1

公开(公告)日：2016-08-18

申请号：US15139482

申请日：2016-04-27

Applicant: JX Nippon Mining & Metals Corporation

Inventor： Tomota Nagaura ,  Michiya Kohiki ,  Terumasa Moriyama

IPC: H05K1/09

CPC classification number: H05K1/09 ,  B32B3/30 ,  B32B15/01 ,  B32B15/08 ,  B32B15/20 ,  B32B2307/306 ,  B32B2307/714 ,  B32B2457/08 ,  C22C9/00 ,  C25D1/04 ,  C25D3/12 ,  C25D3/38 ,  C25D5/12 ,  C25D9/08 ,  H05K1/0313 ,  H05K3/022 ,  H05K3/025 ,  H05K3/06 ,  H05K3/181 ,  H05K3/188 ,  H05K3/381 ,  H05K3/383 ,  H05K3/388 ,  H05K2201/09009 ,  Y10T428/12549 ,  Y10T428/12569 ,  Y10T428/12611 ,  Y10T428/12792 ,  Y10T428/12847 ,  Y10T428/12903 ,  Y10T428/1291

Abstract: Provided is a copper foil for a printed wiring board including a roughened layer on at least one surface thereof. In the roughened layer, the average diameter D1 at the particle bottom being apart from the bottom of each particle by 10% of the particle length is 0.2 to 1.0 μm, and the ratio L1/D1 of the particle length L1 to the average diameter D1 at the particle bottom is 15 or less. In the copper foil for printed wiring board, when a copper foil for printed wiring having a roughened layer is laminated to a resin and then the copper layer is removed by etching, the sum of areas of holes accounting for the resin roughened surface having unevenness is 20% or more. The present invention involves the development of a copper foil for a semiconductor package substrate that can avoid circuit erosion without causing deterioration in other properties of the copper foil. In particular, an object of the present invention is to provide a copper foil for a printed wiring board and a method of producing the copper foil, in which the adhesion strength between the copper foil and the resin can be enhanced by improvement of the roughened layer of the copper foil.

Abstract translation: 提供一种用于印刷电路板的铜箔，其在其至少一个表面上包括粗糙层。 在粗糙层中，粒子底部的平均粒径D1与粒子的底部相隔10％的粒子长度为0.2〜1.0μm，粒子长度L1与平均直径D1的比L1 / D1 在颗粒底部为15或更小。 在印刷电路板用铜箔中，当将具有粗糙层的印刷布线用铜箔层压到树脂上，然后通过蚀刻除去铜层时，占据具有凹凸的树脂粗糙面的孔面积之和为 20％以上。 本发明涉及开发用于半导体封装基板的铜箔，其可以避免电路侵蚀而不会导致铜箔的其它性能的劣化。 特别地，本发明的目的是提供一种用于印刷线路板的铜箔和铜箔的制造方法，其中可以通过改善粗糙层来提高铜箔和树脂之间的粘附强度 的铜箔。

公开(公告)号：US09390839B2

公开(公告)日：2016-07-12

申请号：US13993657

申请日：2011-12-09

Applicant: Ludovic Thilly ,  Florence Lecouturier ,  Jean-Baptiste Dubois ,  Nelson Ferreira ,  Pierre-Olivier Renault ,  Patrick Olier

Inventor： Ludovic Thilly ,  Florence Lecouturier ,  Jean-Baptiste Dubois ,  Nelson Ferreira ,  Pierre-Olivier Renault ,  Patrick Olier

IPC: H01B5/00 ,  H01B11/18 ,  H01B1/02 ,  H01L39/24 ,  H01B13/016 ,  H01F6/06

CPC classification number: H01B11/1895 ,  H01B1/026 ,  H01B13/016 ,  H01F6/06 ,  H01L39/2403 ,  H01L39/2406 ,  Y10T29/49123 ,  Y10T428/12382 ,  Y10T428/12819 ,  Y10T428/12903

Abstract: A conductive composite wire includes at least one external jacket made of copper, a first tube including a first metallic material (M1) contacting and located inside the copper jacket; a second tube including a second metallic material (M2) contacting and located inside the first tube; and a fiber including a third metallic material (M3) contacting and located inside the second tube. The copper and the first metallic material are immiscible with each other, the first and second metallic materials are immiscible with each other, and the second and third metallic materials are immiscible with each other. A copper-based coaxial microstructure includes a copper sheath containing an array of nanotubes and nanofibers according to a process for manufacturing the microstructure.

Abstract translation: 导电复合线包括至少一个由铜制成的外护套，第一管包括接触并位于铜护套内的第一金属材料（M1）; 第二管，其包括接触并位于第一管内的第二金属材料; 以及包括接触并位于第二管内的第三金属材料（M3）的纤维。 铜和第一金属材料彼此不混溶，第一和第二金属材料彼此不混溶，并且第二和第三金属材料彼此不混溶。 根据用于制造微结构的方法，铜基同轴微结构包括含有纳米管阵列和纳米纤维的铜护套。

公开(公告)号：US09388497B2

公开(公告)日：2016-07-12

申请号：US14414655

申请日：2013-07-11

Applicant: TOYO KOHAN CO., LTD.

Inventor： Nobuaki Mukai

IPC: C23C18/16 ,  C23C18/42 ,  C23C28/02 ,  B32B15/01 ,  C23C18/50 ,  C22C19/00 ,  C23C18/44 ,  C23C18/36 ,  H01M8/02

CPC classification number: C23C18/1831 ,  B32B15/01 ,  B32B15/017 ,  B32B15/018 ,  B32B15/043 ,  C22C5/02 ,  C22C19/00 ,  C22C21/06 ,  C23C18/16 ,  C23C18/1633 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/34 ,  C23C18/36 ,  C23C18/38 ,  C23C18/40 ,  C23C18/42 ,  C23C18/44 ,  C23C18/48 ,  C23C18/50 ,  C23C18/52 ,  C23C18/54 ,  C23C28/00 ,  C23C28/02 ,  C23C28/021 ,  C23C30/00 ,  C23C30/005 ,  H01M8/0228 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/12924 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/12972 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/24975

Abstract: There is provided a method of electroless gold plating, wherein the method includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by means of electroless reduction plating using a cyanide-free gold plating bath, wherein the method is characterized in that the underlying alloy layer is formed of an M1-M2-M3 alloy (where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn and Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and Ru, and M3 is at least one element selected from P and B).

Abstract translation: 提供了一种无电镀金的方法，其中所述方法包括在基材上形成下面的合金层的步骤，以及通过使用氰化物的无电还原电镀直接在下面的合金层上形成金板层的步骤 其特征在于，下面的合金层由M1-M2-M3合金（其中M1是选自Ni，Fe，Co，Cu，Zn和Sn中的至少一种元素，M2，M2 是选自Pd，Re，Pt，Rh，Ag和Ru中的至少一种元素，M3是选自P和B中的至少一种元素）。