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公开(公告)号：US12113039B2
公开(公告)日：2024-10-08
申请号：US17245397
申请日：2021-04-30
IPC分类号： H01L23/00 , B22F1/052 , B22F1/102 , B22F1/107 , B22F1/17 , B22F7/04 , B23K1/00 , B23K35/02 , B23K35/30 , B23K35/36 , B23K35/365 , B23K101/40 , B23K103/00 , H01B1/22 , H01L25/00 , H05K3/32 , H10K50/842
CPC分类号： H01L24/29 , B22F1/052 , B22F1/102 , B22F1/107 , B22F1/17 , B22F7/04 , B23K1/0016 , B23K35/025 , B23K35/3006 , B23K35/3601 , B23K35/3613 , B23K35/3618 , B23K35/365 , H01B1/22 , H01L24/11 , H01L24/13 , H01L24/27 , H01L24/32 , H01L24/81 , H01L24/83 , B22F2007/047 , B22F2301/255 , B22F2302/45 , B23K2101/40 , B23K2103/56 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/92 , H01L25/50 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05644 , H01L2224/11003 , H01L2224/1132 , H01L2224/11334 , H01L2224/131 , H01L2224/13339 , H01L2224/13347 , H01L2224/13355 , H01L2224/13387 , H01L2224/1339 , H01L2224/13439 , H01L2224/1349 , H01L2224/13499 , H01L2224/16227 , H01L2224/27003 , H01L2224/271 , H01L2224/27332 , H01L2224/27436 , H01L2224/27505 , H01L2224/2929 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/29387 , H01L2224/2939 , H01L2224/29439 , H01L2224/2949 , H01L2224/29499 , H01L2224/32145 , H01L2224/32146 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/81075 , H01L2224/81192 , H01L2224/81203 , H01L2224/8121 , H01L2224/8184 , H01L2224/81948 , H01L2224/83075 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/8321 , H01L2224/83439 , H01L2224/83447 , H01L2224/8384 , H01L2224/83948 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12044 , H01L2924/1461 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/206 , H01L2924/2064 , H05K3/321 , H10K50/8426 , H01L2224/83203 , H01L2924/00012 , H01L2224/94 , H01L2224/83 , H01L2224/29339 , H01L2924/0105 , H01L2224/29339 , H01L2924/01046 , H01L2224/29339 , H01L2924/01047 , H01L2224/29339 , H01L2924/01029 , H01L2224/29339 , H01L2924/01028 , H01L2224/29439 , H01L2924/00014 , H01L2224/29355 , H01L2924/00014 , H01L2224/29347 , H01L2924/01028 , H01L2224/29347 , H01L2924/01028 , H01L2924/0103 , H01L2224/29387 , H01L2924/0493 , H01L2924/01004 , H01L2224/2949 , H01L2924/00012 , H01L2224/2939 , H01L2924/0665 , H01L2224/271 , H01L2924/00014 , H01L2224/27436 , H01L2924/00014 , H01L2224/94 , H01L2224/27 , H01L2224/05155 , H01L2924/00014 , H01L2224/05644 , H01L2924/00014 , H01L2224/83439 , H01L2924/00014 , H01L2224/83447 , H01L2924/01074 , H01L2224/8321 , H01L2924/00014 , H01L2224/81203 , H01L2924/00012 , H01L2224/94 , H01L2224/81 , H01L2224/13339 , H01L2924/0105 , H01L2224/13339 , H01L2924/01046 , H01L2224/13339 , H01L2924/01047 , H01L2224/13339 , H01L2924/01029 , H01L2224/13339 , H01L2924/01028 , H01L2224/13439 , H01L2924/00014 , H01L2224/13355 , H01L2924/00014 , H01L2224/13347 , H01L2924/01028 , H01L2224/13347 , H01L2924/01028 , H01L2924/0103 , H01L2224/13387 , H01L2924/0493 , H01L2924/01004 , H01L2224/1349 , H01L2924/00012 , H01L2224/1339 , H01L2924/0665 , H01L2224/131 , H01L2924/00014 , H01L2224/11436 , H01L2924/00014 , H01L2224/94 , H01L2224/11 , H01L2224/8121 , H01L2924/00014 , H01L2924/00014 , H01L2224/45099 , H01L2224/1132 , H01L2924/00014 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00012 , H01L2224/73265 , H01L2224/32145 , H01L2224/48247 , H01L2924/00 , H01L2224/73265 , H01L2224/32145 , H01L2224/48227 , H01L2924/00 , H01L2224/92247 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00 , H01L2224/92247 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00
摘要： A sintering powder comprising:
a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.-
公开(公告)号：US09911686B2
公开(公告)日：2018-03-06
申请号：US15155271
申请日：2016-05-16
IPC分类号： H01L23/528 , H01L23/495 , H01L21/48 , H01L21/78 , H01L23/00
CPC分类号： H01L23/49562 , H01L21/4807 , H01L21/56 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/291 , H01L23/3121 , H01L23/49503 , H01L23/49582 , H01L23/49586 , H01L23/528 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/32 , H01L24/49 , H01L24/94 , H01L24/97 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2224/03002 , H01L2224/0346 , H01L2224/03505 , H01L2224/03602 , H01L2224/0391 , H01L2224/04026 , H01L2224/04042 , H01L2224/05556 , H01L2224/05576 , H01L2224/05647 , H01L2224/05687 , H01L2224/0603 , H01L2224/08245 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/94 , H01L2924/00014 , H01L2924/01029 , H01L2924/0532 , H01L2924/05341 , H01L2924/05432 , H01L2924/05442 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/03
摘要： A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.
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公开(公告)号：US20170365576A1
公开(公告)日：2017-12-21
申请号：US15537390
申请日：2015-12-11
发明人： Tetsuya OYAMADA , Tomohiro UNO , Daizo ODA , Takashi YAMADA
CPC分类号： H01L24/45 , B23K35/0227 , B23K35/3006 , B23K35/322 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/43125 , H01L2224/4321 , H01L2224/435 , H01L2224/437 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45541 , H01L2224/45565 , H01L2224/45572 , H01L2224/45605 , H01L2224/45609 , H01L2224/45611 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/48451 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01015 , H01L2924/0102 , H01L2924/01034 , H01L2924/01057 , H01L2924/0132 , H01L2924/10253 , H01L2924/181 , H01L2924/00014 , H01L2924/01031 , H01L2924/01049 , H01L2924/0105 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01204 , H01L2924/20105 , H01L2924/01001 , H01L2924/01007 , H01L2924/01004 , H01L2924/00012 , H01L2924/00015
摘要： The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.
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公开(公告)号：US20170323864A1
公开(公告)日：2017-11-09
申请号：US15107417
申请日：2015-06-05
发明人： Daizo ODA , Motoki ETO , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI , Tomohiro UNO , Tetsuya OYAMADA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , C22C9/00 , C22F1/08 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43848 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45109 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85054 , H01L2224/85065 , H01L2224/85075 , H01L2224/8509 , H01L2224/85203 , H01L2224/85439 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01028 , H01L2924/01031 , H01L2924/01032 , H01L2924/01045 , H01L2924/01046 , H01L2924/01078 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/20111 , H01L2924/20752 , H01L2924/01204 , H01L2924/01049 , H01L2924/01014 , H01L2924/01029 , H01L2924/013 , H01L2924/00013 , H01L2924/01001 , H01L2924/01007 , H01L2924/20105 , H01L2924/20656 , H01L2924/00 , H01L2924/2011 , H01L2924/01004 , H01L2924/01033
摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.
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5.发明授权公开(公告)号：US09536854B2
公开(公告)日：2017-01-03
申请号：US14893833
申请日：2015-03-31
发明人： Takashi Yamada , Daizo Oda , Ryo Oishi , Teruo Haibara , Tomohiro Uno
IPC分类号： H01B5/00 , H01L23/00 , B21C1/00 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , B23K35/30 , B23K35/02
CPC分类号： H01L24/45 , B21C1/00 , B21C1/003 , B23K35/0227 , B23K35/3006 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/45012 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2924/00011 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/013 , H01L2924/10253 , H01L2924/201 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01049 , H01L2924/01045 , H01L2924/00014 , H01L2924/01005 , H01L2924/01016 , H01L2924/01017 , H01L2924/00015 , H01L2924/01201
摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 μm2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.
摘要翻译： 用于半导体器件的接合线，其中通过（1）在包含线中心并且平行于线纵向（线中心横截面）的横截面中抑制倾斜故障和弹簧故障，不存在具有 长轴“a”的比率a / b和短轴“b”为10以上，面积为15μm2以上（“纤维织构”），（2）当测定线材纵向的晶体方向 在线中心横截面的方向上，相对于线纵向的角度差为15°以下的晶体方向<100>的面积比为50％〜90％，（3）当 在线表面测定线长方向的晶体方向，晶体方向<100>与线长度方向的角度差为15°以下的面积比为50％〜90％。 在拉伸步骤中，至少进行一次具有15.5％以上的面积减小率的拉拔操作。 将最终的热处理温度和预热处理温度设定为预定范围。
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公开(公告)号：US20160315063A1
公开(公告)日：2016-10-27
申请号：US15105707
申请日：2014-12-04
发明人： Tomohiro UNO , Yoshiaki HAGIWARA , Tetsuya OYAMADA , Daizo ODA
CPC分类号： H01L24/45 , B23K35/3006 , B23K35/302 , B23K35/3033 , B23K35/322 , C22C5/06 , C22C5/08 , C22C9/06 , H01L24/43 , H01L24/48 , H01L2224/05624 , H01L2224/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/45005 , H01L2224/45015 , H01L2224/45032 , H01L2224/45101 , H01L2224/45139 , H01L2224/45147 , H01L2224/45155 , H01L2224/45163 , H01L2224/45164 , H01L2224/45166 , H01L2224/45541 , H01L2224/45572 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/4809 , H01L2224/48247 , H01L2224/48465 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01015 , H01L2924/013 , H01L2924/10253 , H01L2924/206 , H01L2924/386 , H01L2924/01046 , H01L2924/01029 , H01L2924/01047 , H01L2924/01022 , H01L2924/01028 , H01L2924/00 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2076 , H01L2924/00012 , H01L2924/00014 , H01L2924/01049 , H01L2924/01004 , H01L2924/01204 , H01L2924/01033 , H01L2924/01203
摘要： Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.
摘要翻译： 提供能够减少有缺陷环的发生的接合线。 接合线包括：包含大于50摩尔％的金属M的芯材料; 在芯材的表面上形成由Ni，Pd，金属M和不可避免的杂质构成的中间层，其中Ni的浓度为15〜80摩尔％。 以及形成在中间层上并由Ni，Pd和不可避免的杂质构成的涂层。 涂层中Pd的浓度为50〜100摩尔％。 金属M是Cu或Ag，并且涂层中的Ni的浓度低于中间层中的Ni的浓度。
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公开(公告)号：US20160288272A1
公开(公告)日：2016-10-06
申请号：US15038177
申请日：2013-11-21
发明人： Annette LUKAS , Patrick WENZEL , Michael DEUSCHLE , Eugen MILKE , Sven THOMAS , Jürgen SCHARF
CPC分类号： B23K35/40 , B23K20/007 , B23K20/10 , B23K35/0261 , B23K35/0272 , B23K35/30 , B23K35/3006 , B23K35/302 , B23K35/322 , B23K35/404 , B23K2101/42 , C22F1/08 , C23C14/14 , C23C18/08 , C23C28/00 , C23C30/00 , C23F17/00 , C25D5/34 , C25D7/0607 , H01B1/026 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/745 , H01L24/85 , H01L2224/05124 , H01L2224/05624 , H01L2224/4321 , H01L2224/43823 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45014 , H01L2224/45015 , H01L2224/45139 , H01L2224/45147 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45663 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/48824 , H01L2224/85181 , H01L2224/85205 , H01L2224/85444 , H01L2924/00011 , H01L2924/00014 , H01L2924/01076 , H01L2924/12044 , H01L2924/181 , H05K1/09 , H05K2201/10287 , H05K2203/049 , Y10T428/12875 , Y10T428/12889 , H01L2924/00 , H01L2924/20109 , H01L2924/2011 , H01L2924/01029 , H01L2924/01047 , H01L2924/01046 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01014 , H01L2924/013 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/00012 , H01L2924/01006 , H01L2924/01001 , H01L2924/01008 , H01L2924/01007 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00013 , H01L2924/01049 , H01L2924/01005 , H01L2924/01015 , H01L2924/01033 , H01L2924/206
摘要： A bonding wire according to the invention contains a core having a surface and a coating layer which is at least partially superimposed over the surface of the core. The core contains a core main component selected from copper and silver and the coating layer contains a coating component selected from palladium, platinum, gold, rhodium, ruthenium, osmium and iridium. The coating layer is applied on the surface of the core by depositing a film of a liquid containing a coating component precursor onto a wire core precursor and heating the deposited film to decompose the coating component precursor into a metallic phase.
摘要翻译： 根据本发明的接合线包含具有表面的芯和至少部分地叠置在芯的表面上的涂层。 芯包含选自铜和银的核心主要成分，涂层含有选自钯，铂，金，铑，钌，锇和铱的涂层成分。 通过将含有涂层组分前体的液体的膜沉积到芯芯前体上并加热沉积膜以将涂层组分前体分解成金属相，将涂层施加在芯的表面上。
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8.发明申请公开(公告)号：US20160121431A1
公开(公告)日：2016-05-05
申请号：US14890136
申请日：2014-04-09
申请人： Robert Bosch GmbH
发明人： Bernd HOHENBERGER , Steffen ORSO , Andrea FEIOCK
IPC分类号： B23K35/02 , B23K1/00 , B23K35/362 , B23K35/30
CPC分类号： B23K35/025 , B22F1/0003 , B22F1/0074 , B22F3/1035 , B22F7/08 , B23K1/0016 , B23K35/0244 , B23K35/26 , B23K35/262 , B23K35/30 , B23K35/3006 , B23K35/3601 , B23K35/3612 , B23K35/3618 , B23K35/362 , H01L24/29 , H01L24/83 , H01L2224/29311 , H01L2224/29339 , H01L2224/29347 , H01L2224/83203 , H01L2224/8384 , H01L2924/01322 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/0105 , H01L2924/00
摘要： The present invention relates to a liquid-phase sintering composition containing low-molecular organic auxiliary agents, at least one silver salt, silver particles and one further metal solid material, characterized in that the further solid material is particulate and comprises tin.
摘要翻译： 本发明涉及含有低分子有机助剂，至少一种银盐，银颗粒和一种另外的金属固体材料的液相烧结组合物，其特征在于另外的固体材料是颗粒并包括锡。
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9.发明申请公开(公告)号：US20160111389A1
公开(公告)日：2016-04-21
申请号：US14893833
申请日：2015-03-31
发明人： Takashi YAMADA , Daizo ODA , Ryo OISHI , Teruo HAIBARA , Tomohiro UNO
CPC分类号： H01L24/45 , B21C1/00 , B21C1/003 , B23K35/0227 , B23K35/3006 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/45012 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2924/00011 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/013 , H01L2924/10253 , H01L2924/201 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01049 , H01L2924/01045 , H01L2924/00014 , H01L2924/01005 , H01L2924/01016 , H01L2924/01017 , H01L2924/00015 , H01L2924/01201
摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 μm2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.
摘要翻译： 用于半导体器件的接合线，其中通过（1）在包含线中心并且平行于线纵向（线中心横截面）的横截面中抑制倾斜故障和弹簧故障，不存在具有 长轴“a”的比率a / b和短轴“b”为10以上，面积为15μm2以上（“纤维织构”），（2）当测定线材纵向的晶体方向 在线中心横截面的方向上，相对于线纵向的角度差为15°以下的晶体方向<100>的面积比为50％〜90％，（3）当 在线表面测定线长方向的晶体方向，晶体方向<100>与线长度方向的角度差为15°以下的面积比为50％〜90％。 在拉伸步骤中，至少进行一次具有15.5％以上的面积减小率的拉拔操作。 将最终的热处理温度和预热处理温度设定为预定范围。
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公开(公告)号：US20160035654A1
公开(公告)日：2016-02-04
申请号：US14614119
申请日：2015-02-04
发明人： Manfred Schneegans , Andreas Meiser
IPC分类号： H01L23/495 , H01L21/48 , H01L23/00 , H01L21/78 , H01L23/528
CPC分类号： H01L23/49562 , H01L21/4807 , H01L21/56 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/291 , H01L23/3121 , H01L23/49503 , H01L23/49582 , H01L23/49586 , H01L23/528 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/32 , H01L24/49 , H01L24/94 , H01L24/97 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2224/03002 , H01L2224/0346 , H01L2224/03505 , H01L2224/03602 , H01L2224/0391 , H01L2224/04026 , H01L2224/04042 , H01L2224/05556 , H01L2224/05576 , H01L2224/05647 , H01L2224/05687 , H01L2224/0603 , H01L2224/08245 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/94 , H01L2924/00014 , H01L2924/01029 , H01L2924/0532 , H01L2924/05341 , H01L2924/05432 , H01L2924/05442 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/03
摘要： A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.
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