公开(公告)号：US20180096965A1

公开(公告)日：2018-04-05

申请号：US15569603

申请日：2016-04-14

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Noritoshi ARAKI ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI ,  Tomohiro UNO

IPC分类号： H01L23/00 ,  B23K20/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/745 ,  H01L24/78 ,  H01L2224/43125 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48463 ,  H01L2224/745 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01201 ,  H01L2224/05599

摘要： The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

公开(公告)号：US09911705B2

公开(公告)日：2018-03-06

申请号：US15456746

申请日：2017-03-13

申请人： Mitsubishi Electric Corporation

发明人： Yosuke Nakata ,  Masayoshi Tarutani

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L24/05 ,  H01L23/498 ,  H01L24/01 ,  H01L24/03 ,  H01L24/08 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/034 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/16113 ,  H01L2224/16245 ,  H01L2224/29101 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73251 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/07025 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01201 ,  H01L2924/01014

摘要： A semiconductor device of the present invention includes a semiconductor element, a surface electrode formed on a surface of the semiconductor element, a metal film formed on the surface electrode so as to have a joining portion and a stress relieving portion formed so as to border on and surround the joining portion, solder joined to the joining portion while avoiding the stress relieving portion, and an external electrode joined to the joining portion through the solder.

公开(公告)号：US20160307865A1

公开(公告)日：2016-10-20

申请号：US15091436

申请日：2016-04-05

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Wentao QIN ,  Gordon M. GRIVNA ,  Harold ANDERSON ,  Thomas ANDERSON ,  George CHANG

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45647 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2924/00 ,  H01L2224/45644 ,  H01L2224/45639 ,  H01L2224/45664 ,  H01L2224/45655 ,  H01L2224/45611 ,  H01L2224/45693 ,  H01L2224/45686 ,  H01L2924/013 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01014 ,  H01L2924/00013 ,  H01L2924/01003 ,  H01L2924/01004 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01042 ,  H01L2924/01048 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01092 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206

摘要： A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

摘要翻译： 线接系统。 实施方案可以包括：包括铜（Cu），包括铝（Al）的接合焊盘和与焊盘电耦合的牺牲阳极的接合线，其中牺牲阳极包括一个或多个元件，标准电极电位低于标准电极 铝的潜力

公开(公告)号：US09129934B2

公开(公告)日：2015-09-08

申请号：US12949017

申请日：2010-11-18

申请人： Hans Hartung ,  Dirk Siepe

发明人： Hans Hartung ,  Dirk Siepe

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/00 ,  H01L25/07 ,  H01L21/00 ,  H01L23/24

CPC分类号： H01L24/40 ,  H01L23/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/04026 ,  H01L2224/05647 ,  H01L2224/2908 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45014 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/83205 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203

摘要： A power semiconductor module includes a circuit carrier including an insulation carrier having a top side on which a metallization layer is arranged. A power semiconductor chip is arranged on a side of the metallization layer facing away from the insulation carrier, and which has on a top side of the power semiconductor chip facing away from the circuit carrier an upper chip metallization composed of copper or a copper alloy having a thickness of greater than or equal to 1 μm. An electrical connection conductor composed of copper or a copper alloy is connected to the upper chip metallization at a connecting location. A potting compound extends from the circuit carrier to at least over the top side of the power semiconductor chip and completely covers the top side of the power semiconductor chip, encloses the connection conductor at least in the region of the connecting location, and has a penetration of less than or equal to 30 according to DIN ISO 2137 at a temperature of 25° C.

摘要翻译： 功率半导体模块包括电路载体，该电路载体包括绝缘载体，该绝缘载体具有布置有金属化层的顶侧。 功率半导体芯片布置在金属化层的背离绝缘载体的一侧上，并且在功率半导体芯片的顶侧上背离电路载体，由铜或铜合金构成的上部芯片金属化层具有 大于或等于1μm的厚度。 由铜或铜合金构成的电连接导体在连接位置连接到上部芯片金属化。 灌封化合物从电路载体延伸到至少超过功率半导体芯片的顶侧，并且完全覆盖功率半导体芯片的顶侧，至少在连接位置的区域中包围连接导体，并具有穿透 根据DIN ISO 2137在25℃的温度下小于或等于30。

公开(公告)号：US20130288475A1

公开(公告)日：2013-10-31

申请号：US13996555

申请日：2011-12-16

申请人： Mustafa Özkök ,  Gustavo Ramos ,  Arnd Kilian

发明人： Mustafa Özkök ,  Gustavo Ramos ,  Arnd Kilian

IPC分类号： H05K13/04 ,  H01B1/02 ,  H05K1/09 ,  H01L23/00

CPC分类号： H05K13/04 ,  H01B1/02 ,  H01L23/49811 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05464 ,  H01L2224/05664 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/48864 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/20105 ,  H01L2924/3025 ,  H01L2924/351 ,  H05K1/09 ,  H05K3/244 ,  H05K2203/049 ,  H05K2203/072 ,  H05K2203/095 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01005 ,  H01L2924/20752 ,  H01L2924/01007 ,  H01L2924/01001

摘要： The present invention relates to a method of bonding a copper wire to a substrate, particularly a printed circuit board and an IC-substrate, possessing a layer assembly comprising a copper bonding portion and a palladium or palladium alloy layer and a substrate having a copper wire bonded to aforementioned layer assembly.

摘要翻译： 本发明涉及一种将铜线结合到具有包括铜结合部分和钯或钯合金层的层组件的基板，特别是印刷电路板和IC基板的方法，以及具有铜线的基板 粘合到上述层组件。

公开(公告)号：US20040124545A1

公开(公告)日：2004-07-01

申请号：US10736486

申请日：2003-12-15

发明人： Daniel Wang

IPC分类号： H01L023/48

CPC分类号： H01L24/85 ,  H01L21/485 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5382 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/85045 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00015 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01202 ,  H01L2924/01201 ,  H01L2924/01006

摘要： An integrated circuit package comprising a substrate having terminal pads arranged in at least one row along a perimeter of a surface of the substrate, vias connecting the terminal pads directly to connectors on an opposite side of the substrate, a semiconductor chip mounted on the substrate, inside the perimeter, the chip having bond pads located on a surface of the chip, and a plurality of insulated bond wires, each of the bond wires extending from a bond pad on the chip to a terminal pad on the substrate, the substrate being sized and shaped to provide a sufficient number of rows of terminal pads and associated vias so that horizontal traces through the substrate are not required.

摘要翻译： 一种集成电路封装，包括：衬底，具有沿着衬底的表面的周边排列成至少一行的端子焊盘，将端子焊盘直接连接到衬底相对侧上的连接器的通孔;安装在衬底上的半导体芯片， 在周边内，芯片具有位于芯片表面上的接合焊盘，以及多个绝缘接合线，每个接合线从芯片上的接合焊盘延伸到衬底上的端子焊盘，衬底的尺寸 并且成形为提供足够数量的端子焊盘和相关通孔的行，使得不需要穿过基板的水平迹线。

公开(公告)号：US20040065468A1

公开(公告)日：2004-04-08

申请号：US10648742

申请日：2003-08-26

发明人： Jeffrey Michael Seuntjens

IPC分类号： H02G003/06

CPC分类号： H01L24/48 ,  B21C37/042 ,  H01B1/02 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/4847 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/013 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/00012 ,  H01L2924/01201 ,  H01L2924/01049

摘要： A method of forming a micron-dimensioned wire having a gold alloy annulus surrounding an electrically-conductive non-noble metal core.

摘要翻译： 一种形成具有围绕导电非贵金属芯的金合金环的微米尺寸线的方法。

公开(公告)号：US06178623B2

公开(公告)日：2001-01-30

申请号：US09164490

申请日：1998-10-01

申请人： hiroshi Kitazawa ,  tatsuo Yamaguchi ,  etsuro Tsukada

发明人： hiroshi Kitazawa ,  tatsuo Yamaguchi ,  etsuro Tsukada

IPC分类号： H01R4300

CPC分类号： H01L24/45 ,  C25D5/10 ,  C25D5/44 ,  C25D5/50 ,  H01L24/43 ,  H01L2224/43 ,  H01L2224/431 ,  H01L2224/45015 ,  H01L2224/45118 ,  H01L2224/45124 ,  H01L2224/45573 ,  H01L2224/45574 ,  H01L2224/45601 ,  H01L2224/45618 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/4566 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  Y10T29/49117 ,  H01L2924/0132 ,  H01L2924/01201 ,  H01L2924/01026 ,  H01L2924/01025 ,  H01L2924/01024 ,  H01L2924/01022 ,  H01L2924/013 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/0002

摘要： A copper plated aluminum wire with improvement in adhesive properties is fabricated by a method which includes a displacement step of forming a thin layer of a metal by displacement on a surface of an aluminum or aluminum alloy conductor, an electroplating step of coating a surface of the thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120° C. to 600° C. under an inert gas atmosphere for thermal diffusion. A plated aluminum wire is provided having an anchor metal layer formed by displacement plating, a low thermally conductive metal layer formed by electroplating, and a high electrically conductive metal layer formed by electroplating in which all of the layers are sequentially deposited on an outer surface of an aluminum or aluminum alloy conductor. A plated aluminum wire is provided having an anchor metal layer formed by displacement plating and a high electrically conductive metal layer formed by electroplating in which both of the layers are sequentially deposited on an outer surface of an aluminum or aluminum alloy conductor. A composite lightweight copper plated wire is provided having an electrically conductive metal layer that is deposited by electroplating on an outer surface of an anchor metal layer provided on an aluminum conductor.

摘要翻译： 通过包括在铝或铝合金导体的表面上通过位移形成金属薄层的置换步骤的方法制造具有改善粘合性能的镀铜铝线，电镀步骤， 通过电镀连续地具有铜层的薄层以具有铜涂覆的铝导体，以及在惰性气体气氛下在120℃至600℃的温度下热处理铜涂覆的铝导体的热扩散步骤用于热扩散 。 提供一种电镀铝线，其具有通过移位电镀形成的锚金属层，通过电镀形成的低导热金属层，以及通过电镀形成的高导电金属层，其中所有层顺序地沉积在 铝或铝合金导体。 提供一种电镀铝线，其具有通过位移镀覆形成的锚金属层和通过电镀形成的高导电金属层，其中两层依次沉积在铝或铝合金导体的外表面上。 提供了一种复合轻质镀铜线，其具有通过电镀沉积在设置在铝导体上的锚金属层的外表面上的导电金属层。

公开(公告)号：US20170345711A1

公开(公告)日：2017-11-30

申请号：US15602451

申请日：2017-05-23

申请人： Infineon Technologies AG

发明人： Roman Roth ,  Frank Umbach

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/00

CPC分类号： H01L21/76825 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02145 ,  H01L2224/04042 ,  H01L2224/05096 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01025 ,  H01L2924/01201 ,  H01L2924/20755 ,  H01L2924/2076

摘要： A method for forming a semiconductor device includes forming an insulating material layer above a semiconductor substrate and modifying at least a portion of a surface of the insulating material layer after forming the insulating material layer. Further, the method includes forming an electrical conductive structure on at least the portion of the surface of the insulating material layer after modifying at least the portion of the surface of the insulating material layer.

公开(公告)号：US09536854B2

公开(公告)日：2017-01-03

申请号：US14893833

申请日：2015-03-31

申请人： Nippon Micrometal Corporation ,  Nippon Steel & Sumikin Materials Co., Ltd.

发明人： Takashi Yamada ,  Daizo Oda ,  Ryo Oishi ,  Teruo Haibara ,  Tomohiro Uno

IPC分类号： H01B5/00 ,  H01L23/00 ,  B21C1/00 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  B23K35/30 ,  B23K35/02

CPC分类号： H01L24/45 ,  B21C1/00 ,  B21C1/003 ,  B23K35/0227 ,  B23K35/3006 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  H01L24/43 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45012 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2924/00011 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/013 ,  H01L2924/10253 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01049 ,  H01L2924/01045 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/00015 ,  H01L2924/01201

摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 μm2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

摘要翻译： 用于半导体器件的接合线，其中通过（1）在包含线中心并且平行于线纵向（线中心横截面）的横截面中抑制倾斜故障和弹簧故障，不存在具有 长轴“a”的比率a / b和短轴“b”为10以上，面积为15μm2以上（“纤维织构”），（2）当测定线材纵向的晶体方向 在线中心横截面的方向上，相对于线纵向的角度差为15°以下的晶体方向<100>的面积比为50％〜90％，（3）当 在线表面测定线长方向的晶体方向，晶体方向<100>与线长度方向的角度差为15°以下的面积比为50％〜90％。 在拉伸步骤中，至少进行一次具有15.5％以上的面积减小率的拉拔操作。 将最终的热处理温度和预热处理温度设定为预定范围。