Patent search cpc:"H01L2224/456" Page 1

1.

发明授权
Multichip device including a substrate 有权
Title translation: 多芯片装置包括基板

公开(公告)号：US09385107B2

公开(公告)日：2016-07-05

申请号：US13959712

申请日：2013-08-05

Applicant: Infineon Technologies AG

Inventor： Ivan Nikitin , Joachim Mahler , Khalil Hosseini

IPC: H01L23/48 , H01L25/07 , H01L23/367 , H01L23/373 , H01L23/495 , H01L23/498 , H01L25/065 , H01L23/31 , H01L25/18 , H01L23/00

CPC classification number: H01L25/074 , H01L23/3121 , H01L23/367 , H01L23/3735 , H01L23/49524 , H01L23/49562 , H01L23/49827 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L25/0655 , H01L25/071 , H01L25/072 , H01L25/18 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/06181 , H01L2224/08168 , H01L2224/32225 , H01L2224/37124 , H01L2224/37147 , H01L2224/37155 , H01L2224/3716 , H01L2224/40101 , H01L2224/40137 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/456 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8382 , H01L2224/83825 , H01L2224/8384 , H01L2224/84801 , H01L2924/00014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/1203 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/141 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2924/181 , H01L2924/1815 , H01L2924/00012 , H01L2924/00 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076

Abstract: A device includes a substrate including an electrically insulating core, a first electrically conductive material arranged over a first main surface of the substrate, and a second electrically conductive material arranged over a second main surface of the substrate opposite to the first main surface. The device further includes an electrically conductive connection extending from the first main surface to the second main surface and electrically coupling the first electrically conductive material and the second electrically conductive material, a first semiconductor chip arranged over the first main surface and electrically coupled to the first electrically conductive material, and a second semiconductor chip arranged over the second main surface and electrically coupled to the second electrically conductive material.

Abstract translation: 一种器件包括：衬底，其包括电绝缘芯，布置在衬底的第一主表面上的第一导电材料和布置在与第一主表面相对的衬底的第二主表面上的第二导电材料。该装置还包括从第一主表面延伸到第二主表面并且电耦合第一导电材料和第二导电材料的导电连接，第一半导体芯片，布置在第一主表面上并电耦合到第一导电材料导电材料和布置在第二主表面上并电耦合到第二导电材料的第二半导体芯片。

2.

发明授权
Connecting wire and method for manufacturing same 失效
Title translation: 连接线及其制造方法

公开(公告)号：US08450611B2

公开(公告)日：2013-05-28

申请号：US12607225

申请日：2009-10-28

Applicant: Rainer Dohle , Frank Rudolf , Christian Wenzel

Inventor： Rainer Dohle , Frank Rudolf , Christian Wenzel

IPC: H01R4/62

CPC classification number: H01L24/85 , B23K35/0227 , B23K35/286 , B32B15/01 , B32B15/018 , C22C27/02 , C22C27/04 , C23C14/3407 , C23C14/562 , C23C30/00 , H01L24/43 , H01L24/45 , H01L24/745 , H01L2224/435 , H01L2224/4381 , H01L2224/4382 , H01L2224/43826 , H01L2224/43827 , H01L2224/43831 , H01L2224/43848 , H01L2224/45012 , H01L2224/45014 , H01L2224/45015 , H01L2224/45016 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4557 , H01L2224/45572 , H01L2224/45573 , H01L2224/456 , H01L2224/45624 , H01L2224/45644 , H01L2224/45647 , H01L2224/45664 , H01L2224/45669 , H01L2224/45681 , H01L2224/45684 , H01L2224/45686 , H01L2224/45687 , H01L2224/745 , H01L2224/85099 , H01L2224/85205 , H01L2224/85207 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/20103 , H01L2924/20104 , H01L2224/45138 , H01L2924/00015 , H01L2924/00 , H01L2224/48 , H01L2924/05432 , H01L2924/013

Abstract: A connecting wire having an electrically conductive core, preferably provided by a wire or ribbon, with a coating provided on the surface of the core. The coating is composed of a nitrogen-containing tantalum alloy or tungsten alloy, and also optionally contains silicon as an additional alloy component. A manufacturing method for producing such a connecting wire involves passing a wire or ribbon core past a coating source to apply the coating.

Abstract translation: 一种连接线，其具有导电芯，优选地由线或带提供，其具有设置在芯的表面上的涂层。该涂层由含氮钽合金或钨合金组成，并且还任选地含有作为附加合金成分的硅。用于制造这种连接线的制造方法包括使线或带芯通过涂覆源以施加涂层。

3.

发明授权
Wire bonding structure and method for forming same 有权
Title translation: 线接合结构及其形成方法

公开(公告)号：US08247911B2

公开(公告)日：2012-08-21

申请号：US12445789

申请日：2008-01-15

Applicant: Tomohiro Uno , Shinichi Terashima , Keiichi Kimura , Takashi Yamada , Akihito Nishibayashi

Inventor： Tomohiro Uno , Shinichi Terashima , Keiichi Kimura , Takashi Yamada , Akihito Nishibayashi

IPC: H01L23/488 , H01L21/60

CPC classification number: H01L24/78 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/43821 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4556 , H01L2224/45565 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/781 , H01L2224/78268 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , H01L2924/01001 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00014 , H01L2924/00015 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006

Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

Abstract translation: 提供一种接合线的接合结构及其形成方法，其可以解决多层铜线的实际应用中的现有技术的问题，提高球部的成形性和接合特性，提高楔连接的接合强度，具有较高的工业生产率。主要由铜构成的接合线以及铜以外的导电性金属的浓度高的浓缩层形成在球接合部。浓缩层形成在球接合部分附近或其界面处。导电性金属的浓度为0.05〜20摩尔％的区域的厚度大于等于0.1微米，并且浓缩层中的导电性金属的浓度优选为平均浓度的5倍导电金属在浓缩层以外的球接合部分的浓度。

4.

发明申请
DIE PACKAGE INCLUDING SUBSTRATE WITH MOLDED DEVICE 有权
Title translation: DIE包装，包括具有模制设备的基板

公开(公告)号：US20120012993A1

公开(公告)日：2012-01-19

申请号：US13246682

申请日：2011-09-27

Applicant: Yong Liu , Zhongfa Yuan

Inventor： Yong Liu , Zhongfa Yuan

IPC: H01L23/495 , H01L21/60

CPC classification number: H01L23/49861 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L25/167 , H01L33/483 , H01L33/60 , H01L2224/05553 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/456 , H01L2224/48091 , H01L2224/48247 , H01L2924/01046 , H01L2924/01079 , H01L2924/12041 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/3011 , H01L2924/00014 , H01L2924/01108 , H01L2924/00 , H01L2924/00012

Abstract: A package is disclosed. The package includes a premolded substrate having a leadframe structure, a first device attached to the leadframe structure, and a molding material covering at least part of the leadframe structure and the first device. It also includes a second device attached to the premolded substrate.

Abstract translation: 公开了一个包装。该封装包括具有引线框结构的预成型基板，附接到引线框架结构的第一器件和覆盖引线框结构和第一器件的至少一部分的成型材料。它还包括连接到预成型基板的第二装置。

5.

发明授权
Semiconductor devices and electrical parts manufacturing using metal coated wires 失效
Title translation: 使用金属涂层线的半导体器件和电气部件制造

公开(公告)号：US08084870B2

公开(公告)日：2011-12-27

申请号：US11690908

申请日：2007-03-26

Applicant: Sangdo Lee , Yonksuk Kwon , Bin Cai

Inventor： Sangdo Lee , Yonksuk Kwon , Bin Cai

IPC: H01L23/48

CPC classification number: H01L24/49 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L2224/29101 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/456 , H01L2224/45639 , H01L2224/45655 , H01L2224/45664 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49 , H01L2224/73265 , H01L2224/83801 , H01L2224/85205 , H01L2224/85447 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15747 , H01L2924/19043 , H01L2924/19107 , H01L2924/20104 , H01L2924/20105 , H01L2924/20107 , H01L2924/00014 , H01L2924/01004 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/00015 , H01L2924/00013 , H01L2224/83205 , H01L2924/01006

Abstract: The device of this invention includes a semiconductor die attached to a bare copper lead frame and electrically coupled to a lead by a metal wire coated with a metallic material. The device would function similarly to devices where the lead frames were coated with other metallic materials, but at lower costs because instead of plating the lead frame the wire is plated. The wire can be either gold or aluminum. When the wire is gold, the coating may be silver or other suitable metallic materials. When the wire is aluminum, the coating may be nickel, palladium, or other suitable metals.

Abstract translation: 本发明的装置包括一个半导体管芯，该半导体管芯附着在一个裸铜引线框架上，并通过镀金属材料的金属线电连接到引线上。该装置的功能与其他金属材料涂覆引线框架的设备类似，但成本较低，因为不用电镀引线框架，导线被镀覆。电线可以是金或铝。当导线是金时，涂层可以是银或其它合适的金属材料。当电线是铝时，涂层可以是镍，钯或其它合适的金属。

6.

发明申请
SEMICONDUCTOR DIE PACKAGE AND METHOD FOR MAKING THE SAME 有权
Title translation: 半导体封装及其制造方法

公开(公告)号：US20100258925A1

公开(公告)日：2010-10-14

申请号：US12823411

申请日：2010-06-25

Applicant: Oseob Jeon , Yoonhwa Choi , Boon Huan Gooi , Maria Cristina B. Estacio , David Chong , Tan Teik Keng , Shibaek Nam , Rajeev Joshi , Chung-Lin Wu , Venkat Iyer , Lay Yeap Lim , Byoung-Ok Lee

Inventor： Oseob Jeon , Yoonhwa Choi , Boon Huan Gooi , Maria Cristina B. Estacio , David Chong , Tan Teik Keng , Shibaek Nam , Rajeev Joshi , Chung-Lin Wu , Venkat Iyer , Lay Yeap Lim , Byoung-Ok Lee

IPC: H01L23/28 , H01L21/56

CPC classification number: H01L24/29 , H01L21/561 , H01L23/3121 , H01L23/4951 , H01L23/49558 , H01L23/49562 , H01L23/49575 , H01L23/49861 , H01L24/32 , H01L24/36 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L25/0655 , H01L2223/54406 , H01L2223/54486 , H01L2224/16 , H01L2224/291 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29299 , H01L2224/293 , H01L2224/32057 , H01L2224/32225 , H01L2224/40245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/45565 , H01L2224/456 , H01L2224/45644 , H01L2224/45669 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49113 , H01L2224/4943 , H01L2224/73204 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/83801 , H01L2224/8385 , H01L2224/85013 , H01L2224/97 , H01L2924/00013 , H01L2924/00014 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/1815 , H01L2924/19043 , H01L2924/30107 , H01L2224/85 , H01L2924/00 , H01L2924/0105 , H01L2924/01082 , H01L2924/00012 , H01L2224/13111 , H01L2924/0665 , H01L2224/29099 , H01L2224/29199 , H01L2224/37099

Abstract: Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.

Abstract translation: 公开了半导体管芯封装。示例性半导体管芯封装包括预成型衬底。预成型基板可以具有附接到其上的半导体管芯，并且封装材料可以设置在半导体管芯上方。

7.

发明申请
SEMICONDUCTOR DIE PACKAGE INCLUDING EMBEDDED FLIP CHIP 有权
Title translation: 半导体封装，包括嵌入式芯片

公开(公告)号：US20090230537A1

公开(公告)日：2009-09-17

申请号：US12047028

申请日：2008-03-12

Applicant: Yong Liu , Jeff Ju , Zhongfa Yuan , Roger Luo

Inventor： Yong Liu , Jeff Ju , Zhongfa Yuan , Roger Luo

IPC: H01L23/48 , H01L21/00

CPC classification number: H01L24/49 , H01L21/563 , H01L23/3107 , H01L23/49548 , H01L23/49575 , H01L24/16 , H01L24/28 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/83 , H01L24/85 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/456 , H01L2224/48095 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48639 , H01L2224/48644 , H01L2224/48655 , H01L2224/48671 , H01L2224/48839 , H01L2224/48844 , H01L2224/48855 , H01L2224/48871 , H01L2224/49171 , H01L2224/73203 , H01L2224/73265 , H01L2224/81801 , H01L2224/83801 , H01L2224/83851 , H01L2224/85439 , H01L2224/85444 , H01L2224/85455 , H01L2224/85471 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/07802 , H01L2924/0781 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18161 , H01L2924/00014 , H01L2924/00 , H01L2924/00012

Abstract: A semiconductor die package. The semiconductor die package includes a leadframe structure, a first semiconductor die comprising a first surface attached to a first side of the leadframe structure, and a second semiconductor die attached to a second side of the leadframe structure. The second semiconductor die comprises an integrated circuit die. A housing material is formed over at least a portion of the leadframe structure, the first semiconductor die, and the second semiconductor die. An exterior surface of the molding material is substantially coplanar with the first surface of the semiconductor die.

Abstract translation: 半导体管芯封装。半导体管芯封装包括引线框结构，第一半导体管芯，其包括附接到引线框架结构的第一侧的第一表面和附接到引线框架结构的第二侧的第二半导体管芯。第二半导体管芯包括集成电路管芯。壳体材料形成在引线框架结构，第一半导体管芯和第二半导体管芯的至少一部分上。模制材料的外表面与半导体管芯的第一表面基本共面。

8.

发明申请
Wire Bonds Having Pressure-Absorbing Balls 审中-公开
Title translation: 具有吸压球的线扣

公开(公告)号：US20080251918A1

公开(公告)日：2008-10-16

申请号：US12143029

申请日：2008-06-20

Applicant: SOHICHI KADOGUCHI , NORIHIRO KAWAKAMI

Inventor： SOHICHI KADOGUCHI , NORIHIRO KAWAKAMI

IPC: H01L23/49

CPC classification number: H01L24/85 , B23K20/005 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/05624 , H01L2224/05647 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/45565 , H01L2224/456 , H01L2224/45647 , H01L2224/45686 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/48475 , H01L2224/48482 , H01L2224/48499 , H01L2224/48507 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/85051 , H01L2224/85205 , H01L2924/00011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01079 , H01L2924/01205 , H01L2924/01327 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/14 , H01L2924/181 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20752 , H01L2924/30105 , H01L2924/00014 , H01L2224/78 , H01L2924/00 , H01L2924/00015 , H01L2924/01204 , H01L2924/013 , H01L2924/01049 , H01L2924/01006

Abstract: A semiconductor device with a chip having at least one metallic bond pad (101) over weak insulating material (102). In contact with this bond pad is a flattened metal ball (104) made of at least 99.999% pure metal such as gold, copper, or silver. The diameter (104a) of the flattened ball is less than or equal to the diameter (103a) of the bond pad. A wire (110) is connected to the bond pad so that the wire has a thickened portion (111) conductively attached to the flattened metal ball. The wire is preferably made of composed metal such as gold alloy. The composition of the flattened ball is softer than the wire. This softness of the flattened ball protects the underlying insulator against damage caused by pressure or stress, when the composed ball is attached.

Abstract translation: 一种具有在弱绝缘材料（102）上具有至少一个金属接合焊盘（101）的芯片的半导体器件。与该接合垫接触的是由金，铜或银等至少99.999％的纯金属制成的扁平金属球（104）。扁平球的直径（104a）小于或等于接合垫的直径（103a）。线（110）连接到接合焊盘，使得导线具有导电地附接到扁平金属球的加厚部分（111）。电线优选由金合金等组成金属制成。扁平球的组成比线更软。扁平球的柔软度保护下层绝缘体免受压力或应力造成的损伤，当组合球被附着时。

9.

发明申请
Bonding Wire and Integrated Circuit Device Using the Same 审中-公开
Title translation: 接合线和使用其的集成电路器件

公开(公告)号：US20070235887A1

公开(公告)日：2007-10-11

申请号：US10550548

申请日：2004-10-13

Applicant: Shingo Kaimori , Tsuyoshi Nonaka , Masanori Ioka

Inventor： Shingo Kaimori , Tsuyoshi Nonaka , Masanori Ioka

IPC: H01L23/52 , H01B5/00

CPC classification number: H01L24/85 , B23K20/007 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45611 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45649 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/4567 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/45683 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/48639 , H01L2224/48839 , H01L2224/78301 , H01L2224/85205 , H01L2224/85439 , H01L2924/00011 , H01L2924/01204 , H01L2924/01206 , H01L2924/14 , H01L2924/15747 , H01L2924/20752 , H01L2924/00014 , H01L2924/01004 , H01L2924/0105 , H01L2924/0103 , H01L2924/0104 , H01L2924/01047 , H01L2924/01024 , H01L2924/01026 , H01L2924/01008 , H01L2924/01016 , H01L2924/01001 , H01L2924/01029 , H01L2924/00 , H01L2924/013 , H01L2924/20751 , H01L2924/20753 , H01L2924/20754 , H01L2924/00015 , H01L2924/01076 , H01L2924/01006

Abstract: A bonding wire comprising a core and a coating layer formed on the core, wherein the coating layer is formed from a metal having a higher melting point than the core, and further has at least one of the following characteristics; 1. the wet contact angle with the coating layer when the core is melted is not smaller than 20 degrees; 2. when the bonding wire is hung down with its end touching a horizontal surface, and is cut at a point 15 cm above the end and thus let drop onto the horizontal surface, the curvature radius of the formed arc is 35 mm or larger; 3. the 0.2% yield strength is not smaller than 0.115 mN/μm2 but not greater than 0.165 mN/μm2; or 4. the Vickers hardness of the coating layer is 300 or lower.

Abstract translation: 一种接合线，其包括芯和形成在所述芯上的涂层，其中所述涂层由具有比所述芯更高的熔点的金属形成，并且还具有以下特征中的至少一个; 当芯熔化时与涂层的湿接触角不小于20度; 2.当接合线悬挂时，其端部接触水平表面，并在端部上方15厘米处切割，因此落在水平面上，所形成的弧的曲率半径为35毫米或更大; 0.2％的屈服强度不小于0.115mN / m 2，但不大于0.165mN / m 2。或4.涂层的维氏硬度为300以下。