Abstract:
Methods and systems are disclosed for forming secure wirebonds between electrical contacts in electronic device assemblies. Representative embodiments of the invention are described for forming a wirebond including system components and method steps for generating electromagnetic energy from a heat source and transmitting heat to a ball formed on a bondwire. Subsequently, pressure applied to the ball at the bonding site is used in the formation of a wirebond.
Abstract:
A semiconductor device with a chip having at least one metallic bond pad (101) over weak insulating material (102). In contact with this bond pad is a flattened metal ball (104) made of at least 99.999 % pure metal such as gold, copper, or silver. The diameter (104a) of the flattened ball is less than or equal to the diameter (103a) of the bond pad. A wire (110) is connected to the bond pad so that the wire has a thickened portion (111) conductively attached to the flattened metal ball. The wire is preferably made of composed metal such as gold alloy. The composition of the flattened ball is softer than the wire. This softness of the flattened ball protects the underlying insulator against damage caused by pressure or stress, when the composed ball is attached.
Abstract:
Methods and systems are disclosed for forming secure wirebonds between electrical contacts in electronic device assemblies. Representative embodiments of the invention are described for forming a wirebond including system components and method steps for generating electromagnetic energy from a heat source and transmitting heat to a ball formed on a bondwire. Subsequently, pressure applied to the ball at the bonding site is used in the formation of a wirebond.
Abstract:
Methods and systems are disclosed for forming secure wirebonds between electrical contacts in electronic device assemblies. Representative embodiments of the invention are described for forming a wirebond including system components and method steps for generating electromagnetic energy from a heat source and transmitting heat to a ball formed on a bondwire. Subsequently, pressure applied to the ball at the bonding site is used in the formation of a wirebond.
Abstract:
A semiconductor device with a chip having at least one metallic bond pad (101) over weak insulating material (102). In contact with this bond pad is a flattened metal ball (104) made of at least 99.999% pure metal such as gold, copper, or silver. The diameter (104a) of the flattened ball is less than or equal to the diameter (103a) of the bond pad. A wire (110) is connected to the bond pad so that the wire has a thickened portion (111) conductively attached to the flattened metal ball. The wire is preferably made of composed metal such as gold alloy. The composition of the flattened ball is softer than the wire. This softness of the flattened ball protects the underlying insulator against damage caused by pressure or stress, when the composed ball is attached.
Abstract:
Methods and systems are disclosed for forming secure wirebonds between electrical contacts in electronic device assemblies. Representative embodiments of the invention are described for forming a wirebond including system components and method steps for generating electromagnetic energy from a heat source and transmitting heat to a ball formed on a bondwire. Subsequently, pressure applied to the ball at the bonding site is used in the formation of a wirebond.
Abstract:
A semiconductor device with a chip having at least one metallic bond pad (101) over weak insulating material (102). In contact with this bond pad is a flattened metal ball (104) made of at least 99.999% pure metal such as gold, copper, or silver. The diameter (104a) of the flattened ball is less than or equal to the diameter (103a) of the bond pad. A wire (110) is connected to the bond pad so that the wire has a thickened portion (111) conductively attached to the flattened metal ball. The wire is preferably made of composed metal such as gold alloy. The composition of the flattened ball is softer than the wire. This softness of the flattened ball protects the underlying insulator against damage caused by pressure or stress, when the composed ball is attached.
Abstract:
A flip-chip and underfilled device, which includes a semiconductor chip (101) with contact pads and a workpiece (102) with contact pads in matching locations; the workpiece may be an insulating substrate or another semiconductor chip. The workpiece and the chip are spaced by a gap (103) of substantially uniform average width. Attached to each chip contact pad is a column-shaped spacer (140), which includes two or more deformed spheres of non-reflow metals, preferably gold, bonded together to a height about equal to the gap width. The spacer is attached to the contact pad (110) substantially normal to the chip surface and extends from the chip pad to the matching workpiece pad (120); it is bonded to the workpiece pad by reflow metals (141) such as tin or tin alloy, which covers at least portions of the workpiece pad and the spacer. The gap may be filled with a polymer material (105) surrounding the reflow metal and spacers.
Abstract:
A semiconductor package according to the present invention includes a die attachment area for receiving a die attachment material and a stitch bond area for receiving a wire lead from a die. The stitch bond area is adjacent to said die attachment area on the substrate. Moreover, a stud bump is formed on the substrate for preventing the die attachment material from contacting the stitch bond area when a die is attached to the die attachment area. A method for manufacturing a semiconductor package according to the present invention also is disclosed.