Abstract:
A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.
Abstract:
A bonding wire is provided containing a wire core made of a first material containing a metal and a wire jacket that envelopes the wire core and is made of a second material containing a metal. The wire core and the wire jacket are made of different metals and the bonding wire has an aspect ratio of no more than 0.8. The bonding wire efficiently prevents damage to bonding surfaces during the bonding process and short-circuiting during the use of corresponding sub-assemblies.
Abstract:
A structure may include bond elements having bases joined to conductive elements at a first portion of a first surface and end surfaces remote from the substrate. A dielectric encapsulation element may overlie and extend from the first portion and fill spaces between the bond elements to separate the bond elements from one another. The encapsulation element has a third surface facing away from the first surface. Unencapsulated portions of the bond elements are defined by at least portions of the end surfaces uncovered by the encapsulation element at the third surface. The encapsulation element at least partially defines a second portion of the first surface that is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some conductive elements are at the second portion and configured for connection with such microelectronic element.
Abstract:
According to one embodiment, a semiconductor device includes a part or entirety of a switching power supply, at least one semiconductor element, and at least one line composed of a inner conductor and a soft magnetic member sheathing the inner conductor. The semiconductor device further includes, for example, a circuit substrate on which the part or entirety of the switching power supply and the semiconductor elements are mounted. The lines are mounted on the circuit substrate.
Abstract:
An apparatus includes a substrate that includes electronic circuitry. The apparatus further includes a first die that includes electronic circuitry, and at least one shielded interconnect. The shielded interconnect(s) couple(s) electronic circuitry in the substrate to electronic circuitry in the first die.
Abstract:
Bonding wires for sophisticated bonding applications may be efficiently formed on the basis of a corresponding template device that may be formed on the basis of semiconductor material, such as silicon, in combination with associated fabrication techniques, such as lithography and etch techniques. Hence, any appropriate diameter and cross-sectional shape may be obtained with a high degree of accuracy and reliability.
Abstract:
An apparatus for wire bonding and a capillary tool thereof are provided. An exemplary embodiment of a capillary tool capable of a wire bonding comprises a body having a first internal channel of a first diameter for accommodating a flow of a conductive wire. A compressible head is connected to the body, having a second internal channel of a second diameter for accommodating the flow of the conductive wire, wherein the first diameter is fixed and the second diameter is variable, the second diameter is not more than the first diameter and a diameter the conductive wire flowed through the compressible head is adjustable. An integrated circuit (IC) package is also provided.
Abstract:
A band-shaped and/or filamentary material, having a phosphorus containing metal and/or metal alloy inner layer such as phosphor bronze, deoxidized copper or other similar phosphorus containing material, and a lead alloy outer layer, particularly a lead-tin alloy, wherein the phosphorus content of the inner layer is between 0.03 and 0.13 weight percent. In the preferred embodiment, the amount of phosphorus in the inner layer is between 0.05 and 0.06 weight percent. Electrical conductors and electronic components of this band-shaped and/or filamentary material are also disclosed.
Abstract:
A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.
Abstract:
A structure may include bond elements having bases joined to conductive elements at a first portion of a first surface and end surfaces remote from the substrate. A dielectric encapsulation element may overlie and extend from the first portion and fill spaces between the bond elements to separate the bond elements from one another. The encapsulation element has a third surface facing away from the first surface. Unencapsulated portions of the bond elements are defined by at least portions of the end surfaces uncovered by the encapsulation element at the third surface. The encapsulation element at least partially defines a second portion of the first surface that is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some conductive elements are at the second portion and configured for connection with such microelectronic element.