专利检索 cpc:"H01L2224/43825" 第 1 页

1.

发明申请
BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权

公开(公告)号：US20170179064A1

公开(公告)日：2017-06-22

申请号：US15116145

申请日：2015-12-28

申请人： NIPPON MICROMETAL CORPORATION , NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Takashi YAMADA , Daizo ODA , Ryo OISHI , Tomohiro UNO

IPC分类号： H01L23/00

CPC分类号： H01L24/45 , B23K35/0227 , B23K35/302 , B23K2101/40 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , H01L23/49582 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/43 , H01L2224/43125 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/45847 , H01L2224/45944 , H01L2224/45964 , H01L2224/4801 , H01L2224/48011 , H01L2224/48247 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/48844 , H01L2224/48864 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/85045 , H01L2224/85075 , H01L2224/85181 , H01L2224/85203 , H01L2224/85207 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/15738 , H01L2924/15763 , H01L2924/35121 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01029 , H01L2924/01079 , H01L2924/01028 , H01L2924/01015 , H01L2924/01005 , H01L2924/01004 , H01L2924/01026 , H01L2924/01012 , H01L2924/01022 , H01L2924/0103 , H01L2924/01047 , H01L2924/01014 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00015 , H01L2924/20751 , H01L2924/20752 , H01L2924/01007 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/013 , H01L2924/00013 , H01L2924/00012 , H01L2924/00 , H01L2924/01033 , H01L2924/01083

摘要： A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

2.

发明申请
BONDING STRUCTURE OF BONDING WIRE 有权
标题翻译：粘接线的结合结构

公开(公告)号：US20110104510A1

公开(公告)日：2011-05-05

申请号：US12866797

申请日：2009-07-10

申请人： Tomohiro Uno , Takashi Yamada , Atsuo Ikeda

发明人： Tomohiro Uno , Takashi Yamada , Atsuo Ikeda

IPC分类号： B23K35/22

CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/4382 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48091 , H01L2224/4847 , H01L2224/48471 , H01L2224/48475 , H01L2224/48486 , H01L2224/48499 , H01L2224/48507 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85051 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85986 , H01L2225/06562 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , Y10T428/12222 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01001 , H01L2924/01203 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20652 , H01L2924/20655 , H01L2924/20645 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/01049

摘要： The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump.

摘要翻译： 本发明的目的在于提供铜基接合线的接合结构，实现低材料成本，在反向接合中的连续接合中的高生产率，用于凸块上的楔形接合，以及在高温加热，热循环中具有优异的可靠性测试，回流测试，HAST测试等。接合结构用于将接合线连接到形成在半导体器件的电极上的球凸点，接合线和分别包含铜作为其主要成分的球凸块。接合结构包括设置在球凸块的接合部分和接合线的界面处的浓缩层A，其中浓缩层A中的铜以外的金属R的浓度不小于铜的平均浓度的十倍球碰撞中的金属R; 以及集中层B，设置在所述球凸块的接合部的界面和所述电极之间，所述浓缩层B中的所述金属R的浓度不小于所述球凸块中的金属R的平均浓度的十倍。

3.

发明授权
Semiconductor device 有权
标题翻译：半导体器件

公开(公告)号：US07868436B2

公开(公告)日：2011-01-11

申请号：US11742057

申请日：2007-04-30

申请人： Hiroki Shiota , Hirotaka Muto , Tetsuo Mizoshiri

发明人： Hiroki Shiota , Hirotaka Muto , Tetsuo Mizoshiri

IPC分类号： H01L23/02

CPC分类号： H01L23/585 , H01L23/24 , H01L23/60 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/0619 , H01L2224/29101 , H01L2224/32225 , H01L2224/43825 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/45155 , H01L2224/45169 , H01L2224/4556 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45655 , H01L2224/45669 , H01L2224/4569 , H01L2224/45691 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/4847 , H01L2224/48699 , H01L2224/4899 , H01L2224/49176 , H01L2924/00011 , H01L2924/00014 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/1532 , H01L2924/19107 , H01L2924/00 , H01L2224/43 , H01L2224/05599 , H01L2924/01006

摘要： A semiconductor device includes an insulator substrate mounted on a base plate, the insulator substrate having an upper electrode, semiconductor chips mounted on the insulator substrate, external terminals for establishing external electrical connections of the semiconductor device, wires for establishing electrical connections among the external terminals, the upper electrode and the semiconductor chips, a case accommodating the insulator substrate, the semiconductor chips, the external terminals and the wires which are sealed by a sealing material filled in the case, a lid for protecting an upper part of the sealing material, and an insulative low electrification covering fitted on each wire, the low electrification covering having a lesser tendency to produce an electric charge buildup than the sealing material.

摘要翻译： 半导体器件包括安装在基板上的绝缘体基板，具有上电极的绝缘体基板，安装在绝缘体基板上的半导体芯片，用于建立半导体器件的外部电连接的外部端子，用于在外部端子之间建立电连接的导线上部电极和半导体芯片，容纳绝缘体基板的壳体，半导体芯片，外部端子和由填充在壳体中的密封材料密封的电线，用于保护密封材料的上部的盖，以及安装在每根电线上的绝缘低电气覆盖层，低电气覆盖层产生比密封材料产生电荷积累的倾向较小。

4.

发明申请
BONDING STRUCTURE OF BONDING WIRE AND METHOD FOR FORMING SAME 有权
标题翻译：粘结线的接合结构及其形成方法

公开(公告)号：US20100213619A1

公开(公告)日：2010-08-26

申请号：US12445789

申请日：2008-01-15

申请人： Tomohiro Uno , Shinichi Terashima , Keiichi Kimura , Takashi Yamada , Akihito Nishibayashi

发明人： Tomohiro Uno , Shinichi Terashima , Keiichi Kimura , Takashi Yamada , Akihito Nishibayashi

IPC分类号： H01L23/488 , H01L21/60

CPC分类号： H01L24/78 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/43821 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4556 , H01L2224/45565 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/781 , H01L2224/78268 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , H01L2924/01001 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00014 , H01L2924/00015 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006

摘要： Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

摘要翻译： 提供一种接合线的接合结构及其形成方法，其可以解决多层铜线的实际应用中的现有技术的问题，提高球部的成形性和接合特性，提高楔连接的接合强度，具有较高的工业生产率。主要由铜构成的接合线以及铜以外的导电性金属的浓度高的浓缩层形成在球接合部。浓缩层形成在球接合部分附近或其界面处。导电性金属的浓度为0.05〜20摩尔％的区域的厚度大于等于0.1微米，并且浓缩层中的导电性金属的浓度优选为平均浓度的5倍导电金属在浓缩层以外的球接合部分的浓度。

5.

发明申请
Bonding wire and an integrated circuit device using the same 审中-公开
标题翻译：接合线和使用其的集成电路器件

公开(公告)号：US20050151253A1

公开(公告)日：2005-07-14

申请号：US10508052

申请日：2003-03-24

申请人： Tsuyoshi Nonaka , Masanori Ioka , Shingo Kaimori , Masato Fukagaya

发明人： Tsuyoshi Nonaka , Masanori Ioka , Shingo Kaimori , Masato Fukagaya

IPC分类号： H01L23/49 , H01L23/48

CPC分类号： H01L24/45 , H01L24/43 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45611 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/4567 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/45683 , H01L2924/00011 , H01L2924/00014 , H01L2924/01204 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2924/19043 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/01016 , H01L2924/01004 , H01L2924/01047 , H01L2924/0104 , H01L2924/01008 , H01L2924/01026 , H01L2924/0105 , H01L2924/01024 , H01L2924/0103 , H01L2924/01001 , H01L2924/00015 , H01L2224/48 , H01L2924/00 , H01L2924/01006

摘要： A bonding wire comprising a core mainly consisting of copper, a different metal layer formed of a metal other than copper and formed on the core, and a coating layer formed of an oxidation-resistant metal having a melting point higher than that of copper and formed on the different metal layer, from which balls having the shape of a true sphere in a wide ball diameter range can be formed stably, which can be produced without causing the deterioration of a plating solution at the time of plating, and in which the adhesiveness between the coating layer and the core thereof is excellent; and an integrated circuit device using the bonding wire are provided.

摘要翻译： 一种接合线，包括主要由铜组成的芯，由铜以外的金属形成的不同的金属层，形成在芯上，以及由熔点高于铜形成的抗氧化金属形成的涂层，形成在不同的金属层上，可以稳定地形成具有宽球直径范围内的真球形状的球，其可以在不导致镀覆时的电镀液的劣化的情况下制造，并且其中的粘附性涂层和其核心之间是优异的; 并提供使用接合线的集成电路器件。

6.

发明申请
Bonding wire 审中-公开
标题翻译：粘接线

公开(公告)号：US20040245320A1

公开(公告)日：2004-12-09

申请号：US10493244

申请日：2004-04-21

发明人： Mesato Fukagaya , Shingo Kaimori , Tsuyoshi Nonaka , Masanori Ioka

IPC分类号： B23K001/06

CPC分类号： H01L24/43 , H01L24/45 , H01L24/78 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48639 , H01L2224/48839 , H01L2224/781 , H01L2224/78268 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/1304 , H01L2924/14 , H01L2924/20752 , H01L2924/3025 , H01L2924/3862 , H01L2924/01204 , H01L2924/01205 , H01L2924/01003 , H01L2924/01082 , H01L2924/01048 , H01L2924/00014 , H01L2224/45644 , H01L2924/01203 , H01L2924/01001 , H01L2924/01046 , H01L2924/2011 , H01L2924/20108 , H01L2924/20109 , H01L2924/20111 , H01L2924/20751 , H01L2924/20753 , H01L2924/20754 , H01L2924/01004 , H01L2924/01026 , H01L2924/01008 , H01L2924/20654 , H01L2924/20652 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/01006 , H01L2924/01033

摘要： A bonding wire having a core mainly consisting of copper and a coating layer formed on the core, wherein the coating layer is made of an oxidation-resistant metal having a melting point higher than that of copper, and the elongation of this bonding wire per unit sectional area is 0.021%/nullm2 or more; and a bonding wire having a core mainly consisting of copper and a coating layer formed on the core, wherein the coating layer is made of a metal having oxidation resistance higher than that of copper, and the relationship of 0.007nullXnull0.05 is satisfied wherein an area ratio X is (the area of the coating layer/the area of the core at the section of wire being cut vertically) are provided. The bonding wires thus provided are inexpensive and excellent in ball formation characteristic and bonding characteristic. Further, a ball bonding method characterized in using the above bonding wire is also provided.

摘要翻译： 一种具有主要由铜构成的芯和在芯上形成的涂层的接合线，其中，涂层由熔点高于铜的抗氧化金属制成，并且每单位的该接合线的伸长率截面积为0.021％/ m 2以上; 以及具有主要由铜构成的芯和在芯上形成的涂层的接合线，其中，所述涂层由耐氧化性高于铜的金属制成，并且0.007≤X<= 0.05的关系为满足其中面积比X是（涂层的面积/芯线的垂直截面处的芯部的面积）。由此提供的接合线便宜并且球形成特性和接合特性优异。此外，还提供了使用上述接合线的球接合方法。

7.

发明授权
Bonding wire for semiconductor devices 有权

公开(公告)号：US12132026B2

公开(公告)日：2024-10-29

申请号：US18685871

申请日：2022-10-18

申请人： NIPPON STEEL Chemical & Material Co., Ltd. , NIPPON MICROMETAL CORPORATION

发明人： Tomohiro Uno , Tetsuya Oyamada , Daizo Oda , Motoki Eto

IPC分类号： H01L23/00 , G01N23/203 , G01N23/2276

CPC分类号： H01L24/45 , H01L24/43 , G01N23/203 , G01N23/2276 , G01N2223/601 , G01N2223/602 , G01N2223/611 , H01L2224/4321 , H01L2224/437 , H01L2224/43825 , H01L2224/43848 , H01L2224/45147 , H01L2224/45541 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/3512 , H01L2924/365

摘要： A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.