公开(公告)号：US20170117244A1

公开(公告)日：2017-04-27

申请号：US15107423

申请日：2015-09-18

Applicant: NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

Inventor： Takashi YAMADA ,  Daizo ODA ,  Teruo HAIBARA ,  Tomohiro UNO

IPC: H01L23/00

CPC classification number: H01L24/45 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45609 ,  H01L2224/45618 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45678 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48507 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/01028 ,  H01L2924/00013 ,  H01L2924/20656 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01083 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US09431360B2

公开(公告)日：2016-08-30

申请号：US14287389

申请日：2014-05-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Hsuan-Ting Kuo ,  Yu-Peng Tsai ,  Wei-Hung Lin ,  Chun-Lung Jao ,  Chao-Wen Shih ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56 ,  H01L23/544 ,  H01L23/31

CPC classification number: H01L24/14 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/92 ,  H01L24/94 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/0391 ,  H01L2224/11334 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14 ,  H01L2224/14131 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/1815 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/206 ,  H01L2924/20656 ,  H01L2924/20657 ,  H01L2924/20658 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0665

Abstract: A semiconductor structure includes a substrate including a front side, a conductive bump disposed over the front side, and an opaque molding disposed over the front side and around a periphery portion of an outer surface of the conductive bump, wherein the opaque molding includes a recessed portion disposed above a portion of the front side adjacent to a corner of the substrate and extended through the opaque molding to expose the portion of the front side and an alignment feature disposed within the portion of the front side.

Abstract translation: 半导体结构包括：基板，其包括前侧，设置在前侧的导电凸块和设置在导电凸块的外表面的前侧和周围部分之外的不透明模制件，其中所述不透明模制件包括凹陷 所述部分设置在与所述基板的角部相邻的所述前侧的一部分上方并且延伸穿过所述不透明模制件以暴露所述前侧部分以及设置在所述前侧部分内的对准特征。

公开(公告)号：US08389860B2

公开(公告)日：2013-03-05

申请号：US12669612

申请日：2008-12-03

Applicant: Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

Inventor： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

IPC: H01B5/00 ,  H01B7/18 ,  H01B9/02

CPC classification number: C22C5/02 ,  B23K35/0222 ,  B23K35/302 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C9/01 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45683 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48486 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/3025 ,  H01L2924/01004 ,  H01L2924/01001 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01202 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/20656 ,  H01L2924/20658 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/0104 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of orientations in crystalline orientations in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.

Abstract translation: 用于半导体器件的接合线包括由导电金属形成的芯部件和主要由不同于芯部件的面心立方金属形成在其上的表皮层。 在皮肤层表面的晶面处的线长度方向上的取向<100 <方向<100>的取向比大于或等于50％，并且<100>取向具有相对的角度差 到电线长度方向。 角度差在15度以内。

公开(公告)号：US09257408B2

公开(公告)日：2016-02-09

申请号：US14435932

申请日：2012-11-21

Applicant: Takayuki Matsumoto ,  Hirotaka Onishi ,  Masuo Koga

Inventor： Takayuki Matsumoto ,  Hirotaka Onishi ,  Masuo Koga

IPC: H01L21/44 ,  H01L21/50 ,  H01L23/02 ,  H01L23/00 ,  H01L23/60 ,  H01L23/10 ,  H01L23/31 ,  H01L23/373 ,  H01L23/544 ,  H01L23/12 ,  H01L25/18 ,  H01L21/56 ,  H01L25/07 ,  H01L23/498 ,  H01L23/538

CPC classification number: H01L24/48 ,  H01L21/56 ,  H01L23/10 ,  H01L23/12 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/3735 ,  H01L23/49894 ,  H01L23/5386 ,  H01L23/544 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4917 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83132 ,  H01L2224/8513 ,  H01L2224/85132 ,  H01L2224/85801 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/20656 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: A soldering portion (4) and a Ni plating mark (5) are simultaneously forming by plating on a wiring pattern (2) of an insulating substrate (1). A semiconductor chip (6) is mounted on the insulating substrate (1). A position of the insulating substrate (1) is recognized by the Ni plating mark (5) and a wire (7) is bonded to the semiconductor chip (6). An electrode (8) is joined to the soldering portion (4) by solder (9). The insulating substrate (1), the semiconductor chip (6), the wire (7), and the electrode (8) are encapsulated in an encapsulation material (13).

Abstract translation: 通过电镀在绝缘基板（1）的布线图案（2）上同时形成焊接部分（4）和镀镍标记（5）。 半导体芯片（6）安装在绝缘基板（1）上。 通过Ni电镀标记（5）识别绝缘基板（1）的位置，并且将线（7）接合到半导体芯片（6）。 电极（8）通过焊料（9）与焊接部分（4）接合。 绝缘基板（1），半导体芯片（6），导线（7）和电极（8）被封装在封装材料（13）中。

公开(公告)号：US20110124775A1

公开(公告)日：2011-05-26

申请号：US13055706

申请日：2009-07-22

Applicant: Masahiro Wada

Inventor： Masahiro Wada

IPC: C08L63/00 ,  C08L63/04 ,  C08L63/02

CPC classification number: H01L23/293 ,  C08G59/06 ,  C08G59/68 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/20753 ,  H01L2924/20656 ,  H01L2924/00014

Abstract: Provided is a resin composition for encapsulating a semiconductor which has excellent flame resistance and solder resistance, and can be manufactured at a low cost. The semiconductor encapsulating resin composition includes a phenol resin (A) containing a polymer (A0) having structural units represented by the following general formulae (1) and (2), and composed of one or more components having an aromatic group having at least one alkyl group with 1 to 3 carbon atoms at least at one end; an epoxy resin (B); and an inorganic filler (C), wherein, in the general formula (1), R1 and R2 are each independently a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; R3s are each independently a hydrocarbon group having 1 to 6 carbon atoms; and a is an integer of 0 to 3, wherein, in the general formula (2), R5, R6, R8 and R9 are each independently a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; R4 and R7 are each independently a hydrocarbon group having 1 to 6 carbon atoms; b is an integer of 0 to 3; and c is an integer of 0 to 4.

Abstract translation: 提供一种用于封装半导体的树脂组合物，其具有优异的阻燃性和阻焊性，并且可以以低成本制造。 半导体封装树脂组合物包含含有具有由以下通式（1）和（2）表示的结构单元的聚合物（A0）的酚醛树脂（A），并且由一种或多种具有至少一个 至少在一端具有1至3个碳原子的烷基; 环氧树脂（B）; 和无机填料（C），其中，在通式（1）中，R 1和R 2各自独立地为氢原子或碳原子数1〜6的烃基。 R 3各自独立地为具有1至6个碳原子的烃基; a为0〜3的整数，其中，在通式（2）中，R 5，R 6，R 8和R 9分别独立地为氢原子或碳原子数为1〜6的烃基。 R4和R7各自独立地为具有1至6个碳原子的烃基; b为0〜3的整数; c为0〜4的整数。

公开(公告)号：US20110011619A1

公开(公告)日：2011-01-20

申请号：US12669612

申请日：2008-12-03

Applicant: Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

Inventor： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

IPC: H01B5/00

CPC classification number: C22C5/02 ,  B23K35/0222 ,  B23K35/302 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C9/01 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45683 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48486 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/3025 ,  H01L2924/01004 ,  H01L2924/01001 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01202 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/20656 ,  H01L2924/20658 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/0104 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: It is an object of the present invention to provide a highly-functional bonding wire which can reduce damages at a neck part, has good linearity of loops, stability of loop heights, and stability of bonded shape of a bonding wire, and can cope with semiconductor packaging techniques, such as low looping, thinning, achievement of a fine pitch, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

Abstract translation: 本发明的目的是提供一种可以减少颈部损伤的高功能性接合线，线圈线性良好，线圈高度稳定性和接合线的接合形状的稳定性，能够应付 半导体封装技术，如低循环，变薄，实现细间距，以及三维封装。 半导体器件接合线包括由导电金属形成的芯部件和主要由与芯部件不同的面心立方金属形成的表皮层。 在表皮层表面的长度方向的结晶取向中的<100>取向的百分比大于或等于50％。

公开(公告)号：US20010050422A1

公开(公告)日：2001-12-13

申请号：US09867655

申请日：2001-05-31

Inventor： Munehisa Kishimoto ,  Toshinori Hirashima ,  Hiroshi Satou ,  Hiroi Oka

IPC: H01L021/44 ,  H01L021/48 ,  H01L021/50 ,  H01L023/02

CPC classification number: H01L24/33 ,  H01L23/3737 ,  H01L23/49568 ,  H01L24/05 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05557 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27013 ,  H01L2224/29076 ,  H01L2224/3003 ,  H01L2224/30505 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83194 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/351 ,  H01L2924/20656 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099

Abstract: The present invention provides a semiconductor device which is stably operated even with respect to heat generated upon its operation and makes no use of an environmental harmful substance (lead). The semiconductor device includes a support plate for supporting a semiconductor chip and the semiconductor chip fixed onto the support plate with an adhesive interposed therebetween. The semiconductor chip is fixed to the support plate by a highly thermal conductive adhesive and a high junction strength adhesive provided so as to separate bonding areas from one another. The highly thermal conductive adhesive is provided in plural places within the whole fixing area. The highly thermal conductive adhesive is associated with a heated portion of the semiconductor chip. The high junction strength adhesive is provided so as to surround the highly thermal conductive adhesive. Both the adhesives do not contain lead corresponding to the environmental harmful substance.

Abstract translation: 本发明提供一种半导体器件，其即使在其工作时产生的热也稳定地工作，也不会使用环境有害物质（铅）。 半导体器件包括用于支撑半导体芯片的支撑板和固定在支撑板上的半导体芯片，其间插入有粘合剂。 半导体芯片通过高导热粘合剂和高结合强度的粘合剂固定到支撑板上，以便分开粘合区域。 高导热性粘合剂设置在整个固定区域内的多个位置。 高导热粘合剂与半导体芯片的加热部分相关联。 高结合强度粘合剂被设置成围绕高导热粘合剂。 两种粘合剂都不含有与环境有害物质相对应的铅。

公开(公告)号：US20170323864A1

公开(公告)日：2017-11-09

申请号：US15107417

申请日：2015-06-05

Applicant: NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

Inventor： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI ,  Tomohiro UNO ,  Tetsuya OYAMADA

IPC: H01L23/00

CPC classification number: H01L24/45 ,  C22C9/00 ,  C22F1/08 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45109 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45609 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/8509 ,  H01L2224/85203 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/01204 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/20105 ,  H01L2924/20656 ,  H01L2924/00 ,  H01L2924/2011 ,  H01L2924/01004 ,  H01L2924/01033

Abstract: There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US08883883B2

公开(公告)日：2014-11-11

申请号：US13322037

申请日：2010-05-28

Applicant: Masahiro Wada

Inventor： Masahiro Wada

IPC: C08G59/62 ,  C08L63/00 ,  C08L61/04 ,  C08K3/00 ,  H01L23/29 ,  C08G59/68 ,  H01L23/00

CPC classification number: H01L23/293 ,  C08G59/621 ,  C08G59/688 ,  C08L63/00 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20752 ,  H01L2924/20656

Abstract: Disclosed is a resin composition for encapsulating a semiconductor including a phenol resin (A) having one or more components containing a component (A1) composed of a polymer having a first structural unit and a second structural unit, an epoxy resin (B), and an inorganic filler (C). Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.

Abstract translation: 公开了一种包含具有一种或多种成分的酚醛树脂（A）的半导体的树脂组合物，该组分含有由具有第一结构单元和第二结构单元的聚合物组成的组分（A1），环氧树脂（B）和 无机填料（C）。 还公开了通过将半导体元件与用于封装半导体的树脂组合物的固化物封装而获得的半导体器件。

公开(公告)号：US08815019B2

公开(公告)日：2014-08-26

申请号：US12993401

申请日：2010-02-12

Applicant: Tomohiro Uno ,  Shinichi Terashima ,  Takashi Yamada ,  Ryo Oishi ,  Daizo Oda

Inventor： Tomohiro Uno ,  Shinichi Terashima ,  Takashi Yamada ,  Ryo Oishi ,  Daizo Oda

IPC: B23K35/34

CPC classification number: C22C5/02 ,  B32B15/018 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C21/02 ,  C22C21/12 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/3025 ,  Y10T428/12222 ,  H01L2924/01001 ,  H01L2924/00014 ,  H01L2924/20754 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/01202 ,  H01L2924/01007 ,  H01L2924/01205 ,  H01L2224/45639 ,  H01L2224/45669 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20656 ,  H01L2924/20652 ,  H01L2924/20645 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Abstract translation: 本发明的目的是提供一种能够同时实现滚珠接合性能和线加工性的多层线材，并且提高了环路稳定性，拉伸强度和楔形粘合性能。 半导体接合线包括主要由等于或大于一种以下元素构成的芯部件：Cu，Au和Ag，以及形成在芯部件上并主要由Pd构成的外层。 总线中含有的总氢浓度在0.0001〜0.008质量％的范围内。