Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14435932Application Date: 2012-11-21
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Publication No.: US09257408B2Publication Date: 2016-02-09
- Inventor: Takayuki Matsumoto , Hirotaka Onishi , Masuo Koga
- Applicant: Takayuki Matsumoto , Hirotaka Onishi , Masuo Koga
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2012/080185 WO 20121121
- International Announcement: WO2014/080476 WO 20140530
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/50 ; H01L23/02 ; H01L23/00 ; H01L23/60 ; H01L23/10 ; H01L23/31 ; H01L23/373 ; H01L23/544 ; H01L23/12 ; H01L25/18 ; H01L21/56 ; H01L25/07 ; H01L23/498 ; H01L23/538

Abstract:
A soldering portion (4) and a Ni plating mark (5) are simultaneously forming by plating on a wiring pattern (2) of an insulating substrate (1). A semiconductor chip (6) is mounted on the insulating substrate (1). A position of the insulating substrate (1) is recognized by the Ni plating mark (5) and a wire (7) is bonded to the semiconductor chip (6). An electrode (8) is joined to the soldering portion (4) by solder (9). The insulating substrate (1), the semiconductor chip (6), the wire (7), and the electrode (8) are encapsulated in an encapsulation material (13).
Public/Granted literature
- US20150262962A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-09-17
Information query
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