Invention Grant
US09257408B2 Semiconductor device and method of manufacturing the same 有权
半导体装置及其制造方法

Semiconductor device and method of manufacturing the same
Abstract:
A soldering portion (4) and a Ni plating mark (5) are simultaneously forming by plating on a wiring pattern (2) of an insulating substrate (1). A semiconductor chip (6) is mounted on the insulating substrate (1). A position of the insulating substrate (1) is recognized by the Ni plating mark (5) and a wire (7) is bonded to the semiconductor chip (6). An electrode (8) is joined to the soldering portion (4) by solder (9). The insulating substrate (1), the semiconductor chip (6), the wire (7), and the electrode (8) are encapsulated in an encapsulation material (13).
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