公开(公告)号：US20130042949A1

公开(公告)日：2013-02-21

申请号：US13571781

申请日：2012-08-10

Applicant: Hideyuki Sagawa ,  Seigi Aoyama ,  Hiromitsu Kuroda ,  Toru Sumi ,  Keisuke Fujito ,  Ryohei Okada ,  Shinichi Masui

Inventor： Hideyuki Sagawa ,  Seigi Aoyama ,  Hiromitsu Kuroda ,  Toru Sumi ,  Keisuke Fujito ,  Ryohei Okada ,  Shinichi Masui

IPC: C22F1/08 ,  B21D31/00

CPC classification number: C22F1/08 ,  B21C1/003 ,  C22C9/00 ,  H01B1/026 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45639 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01012 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01025 ,  H01L2924/01024 ,  H01L2924/01016 ,  H01L2924/01008 ,  H01L2924/01205

Abstract: A method of manufacturing a soft-dilute-copper-alloy material includes a plastic working of a soft-dilute-copper-alloy including an additional element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn and Cr, and a balance consisting of copper and inevitable impurity, and a subsequent annealing treatment of the soft-dilute-copper-alloy. A working ratio in the plastic working before the annealing treatment is not less than 50%.

Abstract translation: 软 - 稀铜合金材料的制造方法包括：软 - 稀铜合金的塑性加工，其包含选自Ti，Mg，Zr，Nb，Ca，V，Ni， Mn和Cr，余量由铜和不可避免的杂质组成，以及随后的软 - 稀铜铜合金的退火处理。 退火处理前塑料加工的加工率不小于50％。

公开(公告)号：US20070235887A1

公开(公告)日：2007-10-11

申请号：US10550548

申请日：2004-10-13

Applicant: Shingo Kaimori ,  Tsuyoshi Nonaka ,  Masanori Ioka

Inventor： Shingo Kaimori ,  Tsuyoshi Nonaka ,  Masanori Ioka

IPC: H01L23/52 ,  H01B5/00

CPC classification number: H01L24/85 ,  B23K20/007 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45649 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45678 ,  H01L2224/45683 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48839 ,  H01L2224/78301 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01204 ,  H01L2924/01206 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01008 ,  H01L2924/01016 ,  H01L2924/01001 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/00015 ,  H01L2924/01076 ,  H01L2924/01006

Abstract: A bonding wire comprising a core and a coating layer formed on the core, wherein the coating layer is formed from a metal having a higher melting point than the core, and further has at least one of the following characteristics; 1. the wet contact angle with the coating layer when the core is melted is not smaller than 20 degrees; 2. when the bonding wire is hung down with its end touching a horizontal surface, and is cut at a point 15 cm above the end and thus let drop onto the horizontal surface, the curvature radius of the formed arc is 35 mm or larger; 3. the 0.2% yield strength is not smaller than 0.115 mN/μm2 but not greater than 0.165 mN/μm2; or 4. the Vickers hardness of the coating layer is 300 or lower.

Abstract translation: 一种接合线，其包括芯和形成在所述芯上的涂层，其中所述涂层由具有比所述芯更高的熔点的金属形成，并且还具有以下特征中的至少一个; 当芯熔化时与涂层的湿接触角不小于20度; 2.当接合线悬挂时，其端部接触水平表面，并在端部上方15厘米处切割，因此落在水平面上，所形成的弧的曲率半径为35毫米或更大; 0.2％的屈服强度不小于0.115mN / m 2，但不大于0.165mN / m 2。 或4.涂层的维氏硬度为300以下。

公开(公告)号：US20040188833A1

公开(公告)日：2004-09-30

申请号：US10355593

申请日：2003-01-31

Inventor： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

IPC: H01L023/34

CPC classification number: H05K1/0233 ,  H01L23/4952 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/745 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/451 ,  H01L2224/45117 ,  H01L2224/45118 ,  H01L2224/45123 ,  H01L2224/45124 ,  H01L2224/45138 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/4516 ,  H01L2224/45163 ,  H01L2224/45166 ,  H01L2224/45179 ,  H01L2224/45181 ,  H01L2224/45188 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45617 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45666 ,  H01L2224/45679 ,  H01L2224/45681 ,  H01L2224/45686 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/745 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01008 ,  H01L2924/01009 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (nullm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.

Abstract translation: 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是厚度为0.3〜20（μm）范围的薄膜磁性物质，并且设置在各端子（19）的整个表面上，覆盖安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。

公开(公告)号：US12033972B2

公开(公告)日：2024-07-09

申请号：US17090941

申请日：2020-11-06

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/48 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02288 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/83 ,  H01L24/85 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0346 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45649 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/4568 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48507 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85801 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/45144 ,  H01L2924/00015 ,  H01L2224/45139 ,  H01L2924/00015 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45572 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45644 ,  H01L2224/45147 ,  H01L2924/01046 ,  H01L2224/45639 ,  H01L2924/00014 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45669 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2224/45565 ,  H01L2224/45139 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45611 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45618 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45649 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45655 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45657 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45666 ,  H01L2224/45655 ,  H01L2924/01029 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45639 ,  H01L2224/45664 ,  H01L2924/01028 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05681 ,  H01L2924/00014 ,  H01L2224/05657 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/01056 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/43848

Abstract: A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

公开(公告)号：US09368470B2

公开(公告)日：2016-06-14

申请号：US14529744

申请日：2014-10-31

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Chu-Chung Lee ,  Burton J. Carpenter ,  Tu-Anh N. Tran

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L24/45 ,  H01L24/05 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4555 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45574 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45664 ,  H01L2224/484 ,  H01L2224/4845 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/78304 ,  H01L2224/85002 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/8593 ,  H01L2224/85943 ,  H01L2924/00011 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01049

Abstract: A semiconductor device includes a bond formed on a bond pad. The bond is formed of a wire that includes a central core of conductive metal, a first coating over the central core of conductive metal that is more chemically active than the conductive metal, and a second coating over the central core of conductive metal that is less chemically active than the central core of conductive metal.

Abstract translation: 半导体器件包括形成在接合焊盘上的键。 该键由包括导电金属的中心芯的导线形成，导电金属的中心芯上的第一涂层比导电金属更具化学活性，并且导电金属的中心芯上的第二涂层较少 比导电金属的中心芯化学活性。

公开(公告)号：US20140327018A1

公开(公告)日：2014-11-06

申请号：US14364555

申请日：2013-02-22

Applicant: NIPPON MICROMETAL CORPORATION ,  WASEDA UNIVERSITY

Inventor： Kohei Tatsumi ,  Takashi Yamada ,  Daizo Oda

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/45684 ,  H01L2224/45686 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48818 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/48872 ,  H01L2224/48884 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/20103 ,  H01L2924/351 ,  H01L2924/00015 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01202 ,  H01L2924/20107 ,  H01L2924/20106 ,  H01L2224/29099 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01049

Abstract: It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. In a power semiconductor device in which a metal electrode (die electrode 3) on a power semiconductor die 2 and another metal electrode (connection electrode 4) are connected by metal wire 5 using wedge bonding connection, the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 μm and not greater than 2 mm and the die 3 has thereon one or more metal and/or alloy layers, each of the layer(s) being 50 Å or more in thickness and a metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.

Abstract translation: 本发明的目的是提供一种功率半导体器件，该功率半导体器件能够在不受热应力产生的情况下运行，从而减少线材的发热，确保当器件用于处理大的时候的接合部分的可靠性 量电流和/或在高温气氛下，制造该装置的方法和接合线。 在功率半导体器件中，功率半导体管芯2上的金属电极（管芯电极3）和另一个金属电极（连接电极4）通过金属线5使用楔形接合连接，金属线是Ag或Ag合金线 其直径大于50μm且不大于2mm，并且模具3上具有一个或多个金属和/或合金层，每个层的厚度均为50或更大，并且该层的金属 选自Ni，Cr，Cu，Pd，V，Ti，Pt，Zn，Ag，Au，W和Al。

公开(公告)号：US20050151253A1

公开(公告)日：2005-07-14

申请号：US10508052

申请日：2003-03-24

Applicant: Tsuyoshi Nonaka ,  Masanori Ioka ,  Shingo Kaimori ,  Masato Fukagaya

Inventor： Tsuyoshi Nonaka ,  Masanori Ioka ,  Shingo Kaimori ,  Masato Fukagaya

IPC: H01L23/49 ,  H01L23/48

CPC classification number: H01L24/45 ,  H01L24/43 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45678 ,  H01L2224/45683 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/01016 ,  H01L2924/01004 ,  H01L2924/01047 ,  H01L2924/0104 ,  H01L2924/01008 ,  H01L2924/01026 ,  H01L2924/0105 ,  H01L2924/01024 ,  H01L2924/0103 ,  H01L2924/01001 ,  H01L2924/00015 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/01006

Abstract: A bonding wire comprising a core mainly consisting of copper, a different metal layer formed of a metal other than copper and formed on the core, and a coating layer formed of an oxidation-resistant metal having a melting point higher than that of copper and formed on the different metal layer, from which balls having the shape of a true sphere in a wide ball diameter range can be formed stably, which can be produced without causing the deterioration of a plating solution at the time of plating, and in which the adhesiveness between the coating layer and the core thereof is excellent; and an integrated circuit device using the bonding wire are provided.

Abstract translation: 一种接合线，包括主要由铜组成的芯，由铜以外的金属形成的不同的金属层，形成在芯上，以及由熔点高于铜形成的抗氧化金属形成的涂层，形成 在不同的金属层上，可以稳定地形成具有宽球直径范围内的真球形状的球，其可以在不导致镀覆时的电镀液的劣化的情况下制造，并且其中的粘附性 涂层和其核心之间是优异的; 并提供使用接合线的集成电路器件。

公开(公告)号：US06903440B2

公开(公告)日：2005-06-07

申请号：US10355593

申请日：2003-01-31

Applicant: Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

Inventor： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

IPC: H01L21/60 ,  H01L23/49 ,  H01L23/495 ,  H01L23/66 ,  H03H1/00 ,  H05K1/02 ,  H01L27/082

CPC classification number: H05K1/0233 ,  H01L23/4952 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/745 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/451 ,  H01L2224/45117 ,  H01L2224/45118 ,  H01L2224/45123 ,  H01L2224/45124 ,  H01L2224/45138 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/4516 ,  H01L2224/45163 ,  H01L2224/45166 ,  H01L2224/45179 ,  H01L2224/45181 ,  H01L2224/45188 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45617 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45666 ,  H01L2224/45679 ,  H01L2224/45681 ,  H01L2224/45686 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/745 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01008 ,  H01L2924/01009 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (μm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.

Abstract translation: 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是厚度为0.3〜20（μm）范围的薄膜磁性物质，并且设置在各端子（19）的整个表面上，覆盖安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。

公开(公告)号：US06635961B2

公开(公告)日：2003-10-21

申请号：US09826436

申请日：2001-04-04

Applicant: Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

Inventor： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

IPC: H01L2334

CPC classification number: H05K1/0233 ,  H01L23/4952 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/745 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/451 ,  H01L2224/45117 ,  H01L2224/45118 ,  H01L2224/45123 ,  H01L2224/45124 ,  H01L2224/45138 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/4516 ,  H01L2224/45163 ,  H01L2224/45166 ,  H01L2224/45179 ,  H01L2224/45181 ,  H01L2224/45188 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45617 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45666 ,  H01L2224/45679 ,  H01L2224/45681 ,  H01L2224/45686 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/745 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01008 ,  H01L2924/01009 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (&mgr;m) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.

Abstract translation: 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是薄膜磁性物质，其厚度范围为0.3〜20（μm），并且设置在各端子（19）的整个表面上，覆盖安装在安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。

公开(公告)号：US20170117244A1

公开(公告)日：2017-04-27

申请号：US15107423

申请日：2015-09-18

Applicant: NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

Inventor： Takashi YAMADA ,  Daizo ODA ,  Teruo HAIBARA ,  Tomohiro UNO

IPC: H01L23/00

CPC classification number: H01L24/45 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45609 ,  H01L2224/45618 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45678 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48507 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/01028 ,  H01L2924/00013 ,  H01L2924/20656 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01083 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.