-
公开(公告)号：US10978418B2
公开(公告)日：2021-04-13
申请号：US16572626
申请日：2019-09-17
发明人： Joachim Mahler , Michael Bauer , Jochen Dangelmaier , Reimund Engl , Johann Gatterbauer , Frank Hille , Michael Huettinger , Werner Kanert , Heinrich Koerner , Brigitte Ruehle , Francisco Javier Santos Rodriguez , Antonio Vellei
IPC分类号： H01L23/00 , H01L23/31 , H01L23/29 , H01L21/02 , H01L23/495
摘要： A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.
-
公开(公告)号：US10672678B2
公开(公告)日：2020-06-02
申请号：US16431808
申请日：2019-06-05
发明人： Heinrich Koerner , Michael Bauer , Reimund Engl , Michael Huettinger , Werner Kanert , Joachim Mahler , Brigitte Ruehle
IPC分类号： H01L23/31 , H01L23/495 , H01L21/56
摘要： In various embodiments, methods for forming a chip package are provided. The chip package may include a chip comprising a chip metal surface, a metal contact structure electrically contacting the chip metal surface, a packaging material at least partially encapsulating the chip and the metal contact structure, and a chemical compound physically contacting the packaging material and at least one of the chip metal surface and the metal contact structure, wherein the chemical compound may be configured to improve an adhesion between the metal contact structure and the packaging material and/or between the chip metal surface and the packaging material, as compared with an adhesion in an arrangement without the chemical compound, wherein the chemical compound is essentially free from functional groups comprising sulfur, selenium or tellurium.
-
3.发明申请公开(公告)号：US20170338169A1
公开(公告)日：2017-11-23
申请号：US15600857
申请日：2017-05-22
发明人： Joachim Mahler , Michael Bauer , Jochen Dangelmaier , Reimund Engl , Johann Gatterbauer , Frank Hille , Michael Huettinger , Werner Kanert , Heinrich Koerner , Brigitte Ruehle , Francisco Javier Santos Rodriguez , Antonio Vellei
IPC分类号： H01L23/495 , H01L23/31 , H01L23/29 , H01L21/02 , H01L23/00
CPC分类号： H01L24/48 , H01L21/02164 , H01L21/0217 , H01L21/02266 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02288 , H01L23/293 , H01L23/3107 , H01L23/3135 , H01L23/3142 , H01L23/4952 , H01L23/49582 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/0346 , H01L2224/03826 , H01L2224/03827 , H01L2224/03831 , H01L2224/04042 , H01L2224/05073 , H01L2224/05139 , H01L2224/05147 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/2919 , H01L2224/32245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45573 , H01L2224/45611 , H01L2224/45618 , H01L2224/45639 , H01L2224/45644 , H01L2224/45649 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45666 , H01L2224/4567 , H01L2224/45671 , H01L2224/45672 , H01L2224/4568 , H01L2224/45686 , H01L2224/4569 , H01L2224/45693 , H01L2224/48091 , H01L2224/48106 , H01L2224/4813 , H01L2224/48247 , H01L2224/4846 , H01L2224/48463 , H01L2224/48465 , H01L2224/4847 , H01L2224/48507 , H01L2224/73265 , H01L2224/85205 , H01L2224/85375 , H01L2224/85801 , H01L2224/8592 , H01L2924/00014 , H01L2924/0132 , H01L2924/10253 , H01L2924/181 , H01L2924/00012 , H01L2924/00015 , H01L2924/01046 , H01L2224/45669 , H01L2924/01029 , H01L2924/01028 , H01L2924/01056 , H01L2924/00 , H01L2224/43848
摘要： In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.
-
公开(公告)号：US08748287B2
公开(公告)日：2014-06-10
申请号：US14027051
申请日：2013-09-13
发明人： Hans-Joachim Barth , Andre Hanke , Snezana Jenei , Oliver Nagy , Jiro Morinaga , Bernd Adler , Heinrich Koerner
IPC分类号： H01L21/71
CPC分类号： H01L21/71 , H01L23/49822 , H01L23/552 , H01L23/585 , H01L23/66 , H01L2224/05572 , H01L2224/05573 , H01L2224/056 , H01L2224/16225 , H01L2224/16227 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Structures of a system on a chip are disclosed. In one embodiment, the system on a chip (SoC) includes an RF component disposed on a first part of a substrate, a semiconductor component disposed on a second part of the substrate, the semiconductor component and the RF component sharing a common boundary, and a conductive cage disposed enclosing the RF component. The conductive cage shields the semiconductor component from electromagnetic radiation originating from the RF circuit.
摘要翻译： 公开了一种芯片上的系统的结构。 在一个实施例中，芯片上的系统（SoC）包括设置在基板的第一部分上的RF部件，设置在基板的第二部分上的半导体部件，共享公共边界的半导体部件和RF部件，以及 布置成围绕RF部件的导电笼。 导电笼罩半导体元件不受来自RF电路的电磁辐射。
-
5.发明授权公开(公告)号：US12033972B2
公开(公告)日：2024-07-09
申请号：US17090941
申请日：2020-11-06
发明人： Joachim Mahler , Michael Bauer , Jochen Dangelmaier , Reimund Engl , Johann Gatterbauer , Frank Hille , Michael Huettinger , Werner Kanert , Heinrich Koerner , Brigitte Ruehle , Francisco Javier Santos Rodriguez , Antonio Vellei
IPC分类号： H01L23/00 , H01L21/02 , H01L23/29 , H01L23/31 , H01L23/495
CPC分类号： H01L24/48 , H01L21/02164 , H01L21/0217 , H01L21/02288 , H01L23/293 , H01L23/3135 , H01L23/3142 , H01L23/4952 , H01L23/49582 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/83 , H01L24/85 , H01L21/02266 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L23/3107 , H01L24/29 , H01L24/32 , H01L24/73 , H01L2224/0346 , H01L2224/03826 , H01L2224/03827 , H01L2224/03831 , H01L2224/04042 , H01L2224/05073 , H01L2224/05139 , H01L2224/05147 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/2919 , H01L2224/32245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45573 , H01L2224/45611 , H01L2224/45618 , H01L2224/45639 , H01L2224/45644 , H01L2224/45649 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45666 , H01L2224/4567 , H01L2224/45671 , H01L2224/45672 , H01L2224/4568 , H01L2224/45686 , H01L2224/4569 , H01L2224/45693 , H01L2224/48091 , H01L2224/48106 , H01L2224/4813 , H01L2224/48247 , H01L2224/4846 , H01L2224/48463 , H01L2224/48465 , H01L2224/4847 , H01L2224/48507 , H01L2224/73265 , H01L2224/85205 , H01L2224/85375 , H01L2224/85801 , H01L2224/8592 , H01L2924/00014 , H01L2924/0132 , H01L2924/10253 , H01L2924/181 , H01L2924/181 , H01L2924/00012 , H01L2224/48091 , H01L2924/00014 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00012 , H01L2224/48465 , H01L2224/48247 , H01L2924/00012 , H01L2224/45144 , H01L2924/00015 , H01L2224/45139 , H01L2924/00015 , H01L2224/45565 , H01L2224/45147 , H01L2224/45664 , H01L2224/45572 , H01L2224/45147 , H01L2224/45664 , H01L2224/45644 , H01L2224/45147 , H01L2924/01046 , H01L2224/45639 , H01L2924/00014 , H01L2224/85205 , H01L2924/00014 , H01L2224/05644 , H01L2924/00014 , H01L2224/05639 , H01L2924/00014 , H01L2224/05664 , H01L2924/00014 , H01L2224/45565 , H01L2224/45147 , H01L2224/45669 , H01L2224/45565 , H01L2224/45147 , H01L2224/45644 , H01L2224/45565 , H01L2224/45139 , H01L2224/45565 , H01L2224/45147 , H01L2224/45611 , H01L2224/45565 , H01L2224/45147 , H01L2224/45618 , H01L2224/45565 , H01L2224/45147 , H01L2224/45649 , H01L2224/45565 , H01L2224/45147 , H01L2224/45655 , H01L2224/45565 , H01L2224/45147 , H01L2224/45657 , H01L2224/45565 , H01L2224/45147 , H01L2224/45666 , H01L2224/45655 , H01L2924/01029 , H01L2224/45565 , H01L2224/45147 , H01L2224/45639 , H01L2224/45664 , H01L2924/01028 , H01L2224/05624 , H01L2924/00014 , H01L2224/05655 , H01L2924/00014 , H01L2224/05681 , H01L2924/00014 , H01L2224/05657 , H01L2924/00014 , H01L2224/05666 , H01L2924/00014 , H01L2224/05684 , H01L2924/00014 , H01L2224/05147 , H01L2924/01056 , H01L2224/48465 , H01L2224/48247 , H01L2924/00 , H01L2924/181 , H01L2924/00014 , H01L2224/2919 , H01L2924/00014 , H01L2924/00014 , H01L2224/43848
摘要： A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.
-
公开(公告)号：US20180061742A1
公开(公告)日：2018-03-01
申请号：US15685880
申请日：2017-08-24
发明人： Sergey Ananiev , Robert Bauer , Heinrich Koerner , Yik Yee Tan , Juergen Walter
IPC分类号： H01L23/488 , H01L23/00
CPC分类号： H01L23/488 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/09 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05166 , H01L2224/05557 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13101 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/484 , H01L2224/48507 , H01L2224/48824 , H01L2224/85365 , H01L2924/014 , H01L2924/00014
摘要： A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. The bond structure is in contact with the electrically conductive contact pad structure at least at an enclosed interface region. Additionally, the semiconductor device includes a degradation prevention structure laterally surrounding the enclosed interface region. The degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.
-
7.发明申请公开(公告)号：US20160049329A1
公开(公告)日：2016-02-18
申请号：US14138241
申请日：2013-12-23
发明人： Oliver Aubel , Wolfgang Hasse , Martina Hommel , Heinrich Koerner
IPC分类号： H01L21/768
CPC分类号： H01L21/76864 , H01L21/76843 , H01L21/76844 , H01L21/76849 , H01L21/76852 , H01L21/76858 , H01L21/76865 , H01L21/76867 , H01L21/76877 , H01L21/76885 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An explanation is given of, inter alia, methods in which the barrier material is removed at a via bottom or at a via top area by long-term heat treatment. Concurrently or alternatively, interconnects are coated with barrier material in a simple and uncomplicated manner by means of the long-term heat treatment.
摘要翻译： 特别地说明了通过长期热处理在通孔底部或通孔顶部区域去除阻挡材料的方法。 同时或替代地，互连通过长期热处理以简单且不复杂的方式涂覆有阻挡材料。
-
公开(公告)号：US10461056B2
公开(公告)日：2019-10-29
申请号：US15600857
申请日：2017-05-22
发明人： Joachim Mahler , Michael Bauer , Jochen Dangelmaier , Reimund Engl , Johann Gatterbauer , Frank Hille , Michael Huettinger , Werner Kanert , Heinrich Koerner , Brigitte Ruehle , Francisco Javier Santos Rodriguez , Antonio Vellei
IPC分类号： H01L23/00 , H01L23/31 , H01L23/29 , H01L21/02 , H01L23/495
摘要： In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.
-
公开(公告)号：US09312172B2
公开(公告)日：2016-04-12
申请号：US14673707
申请日：2015-03-30
IPC分类号： H01L21/44 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76879 , H01L21/768 , H01L21/76834 , H01L21/76849 , H01L21/7685 , H01L21/76888 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer.
-
10.发明申请公开(公告)号：US20210082861A1
公开(公告)日：2021-03-18
申请号：US17090941
申请日：2020-11-06
发明人： Joachim Mahler , Michael Bauer , Jochen Dangelmaier , Reimund Engl , Johann Gatterbauer , Frank Hille , Michael Huettinger , Werner Kanert , Heinrich Koerner , Brigitte Ruehle , Francisco Javier Santos Rodriguez , Antonio Vellei
IPC分类号： H01L23/00 , H01L23/31 , H01L23/29 , H01L21/02 , H01L23/495
摘要： In various embodiments, a method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.
-
-
-
-
-
-
-
-
-
搜索结果
22 条记录 (耗时 0.017 秒)
