公开(公告)号：US20240266313A1

公开(公告)日：2024-08-08

申请号：US18685871

申请日：2022-10-18

申请人： NIPPON STEEL Chemical & Material Co., Ltd. ,  NIPPON MICROMETAL CORPORATION

发明人： Tomohiro UNO ,  Tetsuya OYAMADA ,  Daizo ODA ,  Motoki ETO

IPC分类号： H01L23/00 ,  G01N23/203 ,  G01N23/2276

CPC分类号： H01L24/45 ,  H01L24/43 ,  G01N23/203 ,  G01N23/2276 ,  G01N2223/601 ,  G01N2223/602 ,  G01N2223/611 ,  H01L2224/4321 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/365

摘要： A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.

公开(公告)号：US20230245995A1

公开(公告)日：2023-08-03

申请号：US17924657

申请日：2022-03-16

申请人： NIPPON MICROMETAL CORPORATION

发明人： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  H01L24/43 ,  H01L24/48 ,  H01L2224/432 ,  H01L2224/43125 ,  H01L2224/43848 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45117 ,  H01L2224/45123 ,  H01L2224/45138 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45163 ,  H01L2224/45605 ,  H01L2224/45609 ,  H01L2224/45623 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45663 ,  H01L2224/45664 ,  H01L2224/48151 ,  H01L2924/01005 ,  H01L2924/01032 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758

摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that:

in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer,
a thickness of the coating layer is 10 nm or more and 130 nm or less,
an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration CPd (atomic%) to an Ni concentration CNi (atomic%), CPd/CNi, for all measurement points in the coating layer,
the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and
the bonding wire satisfies at least one of following conditions (i) and (ii):

(i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and
(ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

公开(公告)号：US20180090412A1

公开(公告)日：2018-03-29

申请号：US15492604

申请日：2017-04-20

申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.

发明人： Osamu IKEDA ,  Takayuki KUSHIMA ,  Shinji OKUBO ,  Takaaki MIYAZAKI

IPC分类号： H01L23/367 ,  H01L23/00 ,  H01L23/29 ,  H01L23/15 ,  H01L23/373

CPC分类号： H01L23/3675 ,  H01L23/053 ,  H01L23/15 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3157 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/60 ,  H01L24/45 ,  H01L24/46 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45655 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/183 ,  H05K1/0254 ,  H05K1/0259 ,  H05K1/0306 ,  H05K2201/10166 ,  H01L2924/00014

摘要： A power module includes: a ceramic substrate that includes a principal surface and a back surface, and is provided with a plurality of metal wirings on the principal surface; a semiconductor chip mounted on any metal wiring of the plurality of metal wirings; and a resin part disposed around each of the plurality of metal wirings. Further, side faces of the metal wirings each have: a first region in which a plating film is formed; a second region that is positioned above the first region and that is a non-plating region; and a third region that is positioned between the first region and the second region and in which metal particles are formed. The resin part is bonded to the metal particles, the plating film, and the principal surface of the ceramic substrate.

公开(公告)号：US09887172B2

公开(公告)日：2018-02-06

申请号：US15305584

申请日：2015-09-17

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Daizo Oda ,  Motoki Eto ,  Kazuyuki Saito ,  Teruo Haibara ,  Ryo Oishi ,  Takashi Yamada ,  Tomohiro Uno

IPC分类号： H01L23/00 ,  C22C9/00

CPC分类号： H01L24/45 ,  B32B15/00 ,  C22C5/04 ,  C22C9/00 ,  C22C9/06 ,  H01L24/43 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01028 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01046 ,  H01L2924/01033

摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US20170194280A1

公开(公告)日：2017-07-06

申请号：US15305584

申请日：2015-09-17

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Daizo ODA ,  Motoki ETO ,  Kazuyuki SAITO ,  Teruo HAIBARA ,  Ryo OISHI ,  Takashi YAMADA ,  Tomohiro UNO

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  B32B15/00 ,  C22C5/04 ,  C22C9/00 ,  C22C9/06 ,  H01L24/43 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01028 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01046 ,  H01L2924/01033

摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US20170117244A1

公开(公告)日：2017-04-27

申请号：US15107423

申请日：2015-09-18

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Takashi YAMADA ,  Daizo ODA ,  Teruo HAIBARA ,  Tomohiro UNO

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45609 ,  H01L2224/45618 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45678 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48507 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/01028 ,  H01L2924/00013 ,  H01L2924/20656 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01083 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204

摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US09583688B2

公开(公告)日：2017-02-28

申请号：US15015246

申请日：2016-02-04

申请人： NICHIA CORPORATION

发明人： Ryohei Yamashita ,  Ryoichi Yoshimoto

IPC分类号： H01L33/62 ,  H01L33/54 ,  H01L33/48 ,  H01L23/495 ,  H01L23/00 ,  H01L33/52

CPC分类号： H01L33/62 ,  H01L23/495 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L33/483 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29364 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45184 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/0715 ,  H01L2924/07025 ,  H01L2924/095 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/20752

摘要： A light emitting device mount includes a positive lead terminal, a negative lead terminal, and a resin portion. Each of the positive and negative lead terminal includes a first main surface, a second main surface, and an end surface. The end surface is provided between the first main surface and the second main surface. The end surface includes a first recessed surface area and a second recessed surface area. The first recessed surface area is extending from a first point of the first main surface in cross section. The second recessed surface area is extending from a second point of the second main surface in cross section. The first and second recessed surface areas define a protruding portion protruding outwardly. The resin portion is positioned at least between the end surface of the positive lead terminal and the end surface of the negative lead terminal.

摘要翻译： 发光装置支架包括正引线端子，负引线端子和树脂部分。 正极和负极引线端子中的每一个包括第一主表面，第二主表面和端表面。 端面设置在第一主表面和第二主表面之间。 端面包括第一凹陷表面区域和第二凹入表面区域。 第一凹陷表面区域从第一主表面的第一点在横截面上延伸。 第二凹入表面区域从第二主表面的第二点以横截面延伸。 第一和第二凹入表面区域限定向外突出的突出部分。 树脂部分至少位于正引线端子的端面和负引线端子的端面之间。

公开(公告)号：US20160307865A1

公开(公告)日：2016-10-20

申请号：US15091436

申请日：2016-04-05

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Wentao QIN ,  Gordon M. GRIVNA ,  Harold ANDERSON ,  Thomas ANDERSON ,  George CHANG

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45647 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2924/00 ,  H01L2224/45644 ,  H01L2224/45639 ,  H01L2224/45664 ,  H01L2224/45655 ,  H01L2224/45611 ,  H01L2224/45693 ,  H01L2224/45686 ,  H01L2924/013 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01014 ,  H01L2924/00013 ,  H01L2924/01003 ,  H01L2924/01004 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01042 ,  H01L2924/01048 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01092 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206

摘要： A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

摘要翻译： 线接系统。 实施方案可以包括：包括铜（Cu），包括铝（Al）的接合焊盘和与焊盘电耦合的牺牲阳极的接合线，其中牺牲阳极包括一个或多个元件，标准电极电位低于标准电极 铝的潜力

公开(公告)号：US20150334831A1

公开(公告)日：2015-11-19

申请号：US14809570

申请日：2015-07-27

申请人： Invensas Corporation

发明人： Belgacem Haba ,  Ilyas Mohammed ,  Terrence Caskey ,  Reynaldo Co ,  Ellis Chau

IPC分类号： H05K1/11 ,  H05K1/02

CPC分类号： H05K1/11 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/528 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1191 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13101 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14135 ,  H01L2224/16105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/32225 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45101 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H05K1/0298 ,  H05K1/181 ,  H05K1/185 ,  H05K2201/10515 ,  H05K2201/10977 ,  Y02P70/611 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

摘要： A structure may include bond elements having bases joined to conductive elements at a first portion of a first surface and end surfaces remote from the substrate. A dielectric encapsulation element may overlie and extend from the first portion and fill spaces between the bond elements to separate the bond elements from one another. The encapsulation element has a third surface facing away from the first surface. Unencapsulated portions of the bond elements are defined by at least portions of the end surfaces uncovered by the encapsulation element at the third surface. The encapsulation element at least partially defines a second portion of the first surface that is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some conductive elements are at the second portion and configured for connection with such microelectronic element.

公开(公告)号：US20150069639A1

公开(公告)日：2015-03-12

申请号：US14486867

申请日：2014-09-15

申请人： Invensas Corporation

发明人： Ilyas Mohammed

IPC分类号： H01L23/00

CPC分类号： H01L23/5226 ,  H01L21/563 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76892 ,  H01L23/5389 ,  H01L24/06 ,  H01L24/18 ,  H01L24/19 ,  H01L24/20 ,  H01L24/45 ,  H01L24/49 ,  H01L24/96 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45101 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/4569 ,  H01L2224/48 ,  H01L2224/49 ,  H01L2224/73267 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06558 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/182 ,  H01L2924/191 ,  H01L2924/19107 ,  H05K3/4046 ,  H05K2201/10287 ,  H05K2203/1461 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01049

摘要： A method for making a microelectronic unit includes forming a plurality of wire bonds on a first surface in the form of a conductive bonding surface of a structure comprising a patternable metallic element. The wire bonds are formed having bases joined to the first surface and end surfaces remote from the first surface. The wire bonds have edge surfaces extending between the bases and the end surfaces. The method also includes forming a dielectric encapsulation layer over a portion of the first surface of the conductive layer and over portions of the wire bonds such that unencapsulated portions of the wire bonds are defined by end surfaces or portions of the edge surfaces that are uncovered by the encapsulation layer. The metallic element is patterned to form first conductive elements beneath the wire bonds and insulated from one another by portions of the encapsulation layer.

摘要翻译： 制造微电子单元的方法包括在包括可图案化的金属元件的结构的导电接合表面的形式的第一表面上形成多个引线接合。 线接合形成有与第一表面和远离第一表面的端表面接合的基底。 线接合具有在基部和端面之间延伸的边缘表面。 该方法还包括在导电层的第一表面的一部分上方并且在引线接合部分之上形成电介质封装层，使得引线接合的未封装部分由未被所述边缘表面覆盖的端面或边缘表面的部分限定 封装层。 金属元件被图案化以在引线键合下形成第一导电元件，并且通过封装层的一部分彼此绝缘。