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公开(公告)号：US20230154884A1
公开(公告)日：2023-05-18
申请号：US17916935
申请日：2021-03-29
发明人： Daizo ODA , Takumi OOKABE , Motoki ETO , Noritoshi ARAKI , Ryo OISHI , Teruo HAIBARA , Tomohiro UNO , Tetsuya OYAMADA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45139
摘要： There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy
0.05
≤
x
1
≤
3.0
,
and
15
≤
x
2
≤
700
where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm],
with the balance including Ag.-
公开(公告)号：US20230142531A1
公开(公告)日：2023-05-11
申请号：US17912824
申请日：2020-03-25
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45124 , H01L2224/45149 , H01L2224/4516 , H01L2224/45171
摘要： There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that the wire contains 0.02 to 1% by mass of Fe, further contains 0.05 to 0.5% by mass in total of at least one or more of Mn and Cr, and the balance includes Al and inevitable impurities, wherein a total content of Fe, Mn and Cr in solid solution is 0.01 to 1% by mass. The Al bonding wire contains Mn and Cr in addition to Fe, so that Fe, Mn and Cr can be promoted to form a solid solution in quenching treatment after the solution treatment. Accordingly, the Al bonding wire can achieve an effect of solid-solution strengthening of the wire due to the increase in the total content of Fe, Mn and Cr in solid solution and an effect of preventing recrystallization from proceeding during use of the semiconductor device at a high temperature for a long time.
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公开(公告)号：US20230018430A1
公开(公告)日：2023-01-19
申请号：US17942838
申请日：2022-09-12
发明人： Daizo ODA , Takashi YAMADA , Motoki ETO , Teruo HAIBARA , Tomohiro UNO
摘要： In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.
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公开(公告)号：US20220266396A1
公开(公告)日：2022-08-25
申请号：US17628842
申请日：2020-11-12
发明人： Tetsuya OYAMADA , Tomohiro UNO , Daizo ODA , Motoki ETO , Takumi OHKABE
摘要： An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.
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公开(公告)号：US20220152749A1
公开(公告)日：2022-05-19
申请号：US17437802
申请日：2020-03-12
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
摘要： There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.
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公开(公告)号：US20200312808A1
公开(公告)日：2020-10-01
申请号：US16311125
申请日：2017-06-13
发明人： Daizo ODA , Takashi YAMADA , Motoki ETO , Teruo HAIBARA , Tomohiro UNO
摘要： In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.
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公开(公告)号：US20190326246A1
公开(公告)日：2019-10-24
申请号：US16313825
申请日：2018-02-14
发明人： Tetsuya OYAMADA , Tomohiro UNO , Takashi YAMADA , Daizo ODA , Motoki ETO
摘要： The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.
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公开(公告)号：US20240266313A1
公开(公告)日：2024-08-08
申请号：US18685871
申请日：2022-10-18
发明人： Tomohiro UNO , Tetsuya OYAMADA , Daizo ODA , Motoki ETO
IPC分类号： H01L23/00 , G01N23/203 , G01N23/2276
CPC分类号： H01L24/45 , H01L24/43 , G01N23/203 , G01N23/2276 , G01N2223/601 , G01N2223/602 , G01N2223/611 , H01L2224/4321 , H01L2224/437 , H01L2224/43825 , H01L2224/43848 , H01L2224/45147 , H01L2224/45541 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/3512 , H01L2924/365
摘要： A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.
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公开(公告)号：US20240110262A1
公开(公告)日：2024-04-04
申请号：US18275599
申请日：2022-01-31
发明人： Tomohiro UNO , Yuya SUTO , Tetsuya OYAMADA , Daizo ODA , Yuto KURIHARA , Motoki ETO
IPC分类号： C22C21/14 , C22C1/02 , C22C21/00 , C22C21/02 , C22C21/08 , C22C21/16 , C22F1/043 , C22F1/047 , C22F1/057 , H01L23/00
CPC分类号： C22C21/14 , C22C1/026 , C22C21/00 , C22C21/02 , C22C21/08 , C22C21/16 , C22F1/043 , C22F1/047 , C22F1/057 , H01L24/45 , H01L2224/45124
摘要： There is provided an Al wiring material which can achieve sufficient bond reliability of bonded parts in a high-temperature environment at the time when a semiconductor device operates. The Al wiring material containing one or more of Pd and Pt so as to satisfy
3≤x1a≤90 or 10≤x1b≤250, and
3≤(x1a+x1b)≤300,
where x1a and x1b are respectively a content of Pd [mass ppm] and a content of Pt [mass ppm],
with the balance comprising Al, and
an average crystal grain diameter on a cross-section perpendicular to a longitudinal direction of the Al wiring material is 3 to 35 μm.-
公开(公告)号：US20230245995A1
公开(公告)日：2023-08-03
申请号：US17924657
申请日：2022-03-16
发明人： Daizo ODA , Motoki ETO , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L24/43 , H01L24/48 , H01L2224/432 , H01L2224/43125 , H01L2224/43848 , H01L2224/45105 , H01L2224/45109 , H01L2224/45117 , H01L2224/45123 , H01L2224/45138 , H01L2224/45139 , H01L2224/45147 , H01L2224/45163 , H01L2224/45605 , H01L2224/45609 , H01L2224/45623 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45663 , H01L2224/45664 , H01L2224/48151 , H01L2924/01005 , H01L2924/01032 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758
摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that:
in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer,
a thickness of the coating layer is 10 nm or more and 130 nm or less,
an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration CPd (atomic%) to an Ni concentration CNi (atomic%), CPd/CNi, for all measurement points in the coating layer,
the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and
the bonding wire satisfies at least one of following conditions (i) and (ii):
(i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and
(ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.
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