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公开(公告)号：US20230142531A1
公开(公告)日：2023-05-11
申请号：US17912824
申请日：2020-03-25
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45124 , H01L2224/45149 , H01L2224/4516 , H01L2224/45171
摘要： There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that the wire contains 0.02 to 1% by mass of Fe, further contains 0.05 to 0.5% by mass in total of at least one or more of Mn and Cr, and the balance includes Al and inevitable impurities, wherein a total content of Fe, Mn and Cr in solid solution is 0.01 to 1% by mass. The Al bonding wire contains Mn and Cr in addition to Fe, so that Fe, Mn and Cr can be promoted to form a solid solution in quenching treatment after the solution treatment. Accordingly, the Al bonding wire can achieve an effect of solid-solution strengthening of the wire due to the increase in the total content of Fe, Mn and Cr in solid solution and an effect of preventing recrystallization from proceeding during use of the semiconductor device at a high temperature for a long time.
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公开(公告)号：US20230018430A1
公开(公告)日：2023-01-19
申请号：US17942838
申请日：2022-09-12
发明人： Daizo ODA , Takashi YAMADA , Motoki ETO , Teruo HAIBARA , Tomohiro UNO
摘要： In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.
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公开(公告)号：US20210043599A1
公开(公告)日：2021-02-11
申请号：US16976069
申请日：2019-09-20
发明人： Tetsuya Oyamada , Tomohiro UNO , Takashi YAMADA , Dizo ODA
IPC分类号： H01L23/00
摘要： It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations , and having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.
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公开(公告)号：US20200013748A1
公开(公告)日：2020-01-09
申请号：US16576683
申请日：2019-09-19
发明人： Takashi YAMADA , Daizo ODA , Ryo OISHI , Tomohiro UNO
摘要： There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.
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公开(公告)号：US20170200689A1
公开(公告)日：2017-07-13
申请号：US15107421
申请日：2015-07-22
发明人： Takashi YAMADA , Daizo ODA , Teruo HAIBARA , Ryo OISHI , Kazuyuki SAITO , Tomohiro UNO
CPC分类号： B23K35/0227 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/00 , B32B15/01 , B32B15/018 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , C23C30/00 , C23C30/005 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/4382 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45118 , H01L2224/4512 , H01L2224/45147 , H01L2224/45155 , H01L2224/45169 , H01L2224/45173 , H01L2224/45178 , H01L2224/45541 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48824 , H01L2224/78 , H01L2224/78251 , H01L2224/85 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85444 , H01L2224/85464 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01052 , H01L2924/01057 , H01L2924/0665 , H01L2924/0705 , H01L2924/10253 , H01L2924/186 , Y10T428/12868 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/2495 , Y10T428/24967 , Y10T428/265 , H01L2924/01028 , H01L2924/0103 , H01L2924/01045 , H01L2924/01049 , H01L2924/01077 , H01L2924/01078 , H01L2924/01031 , H01L2924/0105 , H01L2924/01051 , H01L2924/01083 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00015 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/00014 , H01L2924/01014 , H01L2924/013 , H01L2924/00013 , H01L2924/20105 , H01L2924/01001 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/01027 , H01L2924/01047 , H01L2924/01013
摘要： A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 μm or more and 1.3 μm or less.
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公开(公告)号：US20220152749A1
公开(公告)日：2022-05-19
申请号：US17437802
申请日：2020-03-12
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
摘要： There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.
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公开(公告)号：US20200312808A1
公开(公告)日：2020-10-01
申请号：US16311125
申请日：2017-06-13
发明人： Daizo ODA , Takashi YAMADA , Motoki ETO , Teruo HAIBARA , Tomohiro UNO
摘要： In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.
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公开(公告)号：US20200279824A1
公开(公告)日：2020-09-03
申请号：US16637653
申请日：2018-08-07
发明人： Tetsuya OYAMADA , Tomohiro UNO , Takashi YAMADA , Daizo ODA
IPC分类号： H01L23/00
摘要： The present invention provides a bonding wire for a semiconductor device, where the bonding wire can inhibit wear of capillary. In a Cu alloy bonding wire for a semiconductor device, a total of abundance ratios of a crystal orientations and having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis is to crystal orientations on a wire surface 40% or more and 90% or less, in average area percentage.
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公开(公告)号：US20200168578A1
公开(公告)日：2020-05-28
申请号：US16637672
申请日：2018-08-07
发明人： Tetsuya OYAMADA , Tomohiro UNO , Takashi YAMADA , Daizo ODA
摘要： The present invention provides a Cu alloy bonding wire for a semiconductor device, where the bonding wire can satisfy requirements of high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device, the abundance ratio of a crystal orientation having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis to crystal orientations on a wire surface is 25% or more and 70% or less in average area percentage.
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公开(公告)号：US20190326246A1
公开(公告)日：2019-10-24
申请号：US16313825
申请日：2018-02-14
发明人： Tetsuya OYAMADA , Tomohiro UNO , Takashi YAMADA , Daizo ODA , Motoki ETO
摘要： The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.
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