- 专利标题: BONDING WIRE FOR SEMICONDUCTOR DEVICES
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申请号: US18685871申请日: 2022-10-18
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公开(公告)号: US20240266313A1公开(公告)日: 2024-08-08
- 发明人: Tomohiro UNO , Tetsuya OYAMADA , Daizo ODA , Motoki ETO
- 申请人: NIPPON STEEL Chemical & Material Co., Ltd. , NIPPON MICROMETAL CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: NIPPON STEEL Chemical & Material Co., Ltd.,NIPPON MICROMETAL CORPORATION
- 当前专利权人: NIPPON STEEL Chemical & Material Co., Ltd.,NIPPON MICROMETAL CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP 22101611 2022.06.24
- 国际申请: PCT/JP2022/038688 2022.10.18
- 进入国家日期: 2024-02-22
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; G01N23/203 ; G01N23/2276
摘要:
A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.
公开/授权文献
- US12132026B2 Bonding wire for semiconductor devices 公开/授权日:2024-10-29
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