Capacitor structure
    3.
    发明授权
    Capacitor structure 有权
    电容结构

    公开(公告)号:US09059133B2

    公开(公告)日:2015-06-16

    申请号:US14467824

    申请日:2014-08-25

    摘要: One or more embodiments relate to a semiconductor device, comprising: A semiconductor device, comprising: a semiconductor substrate; a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive vias electrically coupled together, each of the second conductive vias passing through the substrate, the second conductive vias spacedly disposed from the first conductive vias, each of the second conductive vias laterally surrounding a respective one of the first conductive vias.

    摘要翻译: 一个或多个实施例涉及半导体器件,包括:半导体器件,包括:半导体衬底; 多个第一导电通孔,第一导电通孔电耦合在一起,每个第一导电通孔穿过基板; 以及多个第二导电通孔,所述第二导电通孔电耦合在一起,每个所述第二导电通孔穿过所述基板,所述第二导电通孔与所述第一导电通孔间隔开设置,所述第二导电通孔中的每一个横向地围绕相应的一个 的第一导电通孔。