公开(公告)号：US06903440B2

公开(公告)日：2005-06-07

申请号：US10355593

申请日：2003-01-31

申请人： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

发明人： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

IPC分类号： H01L21/60 ,  H01L23/49 ,  H01L23/495 ,  H01L23/66 ,  H03H1/00 ,  H05K1/02 ,  H01L27/082

CPC分类号： H05K1/0233 ,  H01L23/4952 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/745 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/451 ,  H01L2224/45117 ,  H01L2224/45118 ,  H01L2224/45123 ,  H01L2224/45124 ,  H01L2224/45138 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/4516 ,  H01L2224/45163 ,  H01L2224/45166 ,  H01L2224/45179 ,  H01L2224/45181 ,  H01L2224/45188 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45617 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45666 ,  H01L2224/45679 ,  H01L2224/45681 ,  H01L2224/45686 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/745 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01008 ,  H01L2924/01009 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2224/45015 ,  H01L2924/207

摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (μm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.

摘要翻译： 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是厚度为0.3〜20（μm）范围的薄膜磁性物质，并且设置在各端子（19）的整个表面上，覆盖安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。

公开(公告)号：US06635961B2

公开(公告)日：2003-10-21

申请号：US09826436

申请日：2001-04-04

申请人： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

发明人： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

IPC分类号： H01L2334

CPC分类号： H05K1/0233 ,  H01L23/4952 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/745 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/451 ,  H01L2224/45117 ,  H01L2224/45118 ,  H01L2224/45123 ,  H01L2224/45124 ,  H01L2224/45138 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/4516 ,  H01L2224/45163 ,  H01L2224/45166 ,  H01L2224/45179 ,  H01L2224/45181 ,  H01L2224/45188 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45617 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45666 ,  H01L2224/45679 ,  H01L2224/45681 ,  H01L2224/45686 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/745 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01008 ,  H01L2924/01009 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2224/45015 ,  H01L2924/207

摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (&mgr;m) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.

摘要翻译： 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是薄膜磁性物质，其厚度范围为0.3〜20（μm），并且设置在各端子（19）的整个表面上，覆盖安装在安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。

公开(公告)号：US06703778B2

公开(公告)日：2004-03-09

申请号：US09826145

申请日：2001-04-04

申请人： Shinya Watanabe ,  Koji Kamei ,  Hiroshi Ono ,  Shigeyoshi Yoshida ,  Michio Nemoto

发明人： Shinya Watanabe ,  Koji Kamei ,  Hiroshi Ono ,  Shigeyoshi Yoshida ,  Michio Nemoto

IPC分类号： H01J2988

CPC分类号： H01J11/12 ,  C03C17/22 ,  C03C17/245 ,  C03C2217/217 ,  C03C2217/23 ,  C03C2217/281 ,  C03C2217/285 ,  C03C2218/15 ,  C03C2218/154 ,  H01J11/44 ,  H01J29/867 ,  H01J2211/446 ,  H01J2329/869

摘要： In a display device (70, 70A, 80-80G, 90-90F) having a display window (73, 81, 93), a magnetic loss layer or layer (75, 75A, 88-88C, 97-97C) is formed on at least a part of a principal surface of the display window. The magnetic loss layer may be a granular magnetic thin layer which is, for example, made of a magnetic substance of a magnetic composition comprising M, X and Y, where M is a metallic magnetic material consisting of Fe, Co, and/or Ni, X being element or elements other than M and Y, and Y being F, N, and/or O. The magnetic loss layer may be formed in any one selected from mat, lattice, stripe, and speck fashions. The magnetic loss layer may be formed in a mesh fashion.

摘要翻译： 在具有显示窗口（73,81,93）的显示装置（70,70A，80-80G，90-90F）中，形成磁损耗层或层（75,75A，88-88C，97-97C） 在显示窗口的主表面的至少一部分上。 磁损耗层可以是粒状磁性薄膜，其例如由包含M，X和Y的磁性组合物的磁性物质制成，其中M是由Fe，Co和/或Ni组成的金属磁性材料 ，X是除了M和Y之外的元素或元素，Y是F，N和/或O.磁损耗层可以形成为从垫，格子，条纹和斑点时尚中选择的任何一种。 磁损耗层可以以网状形成。

公开(公告)号：US08164001B2

公开(公告)日：2012-04-24

申请号：US11986432

申请日：2007-11-21

申请人： Shigeyoshi Yoshida ,  Koichi Kondo ,  Hiroshi Ono ,  Satoshi Arai ,  Tadashi Kubodera

发明人： Shigeyoshi Yoshida ,  Koichi Kondo ,  Hiroshi Ono ,  Satoshi Arai ,  Tadashi Kubodera

IPC分类号： H05K1/03

CPC分类号： H05K1/0233 ,  H05K3/429 ,  H05K2201/086 ,  H05K2201/09309 ,  H05K2203/072 ,  Y10T428/26 ,  Y10T428/31678

摘要： A multilayer printed circuit board includes an inner magnetic layer essentially consisting of magnetic material. The inner magnetic layer may be formed by an action of chemical bond or van der Waals force. The inner magnetic layer may comprise a plurality of magnetic units, each of which provides magnetism, and may be formed by magnetically coupling the magnetic units with each other by using a strong interaction. The inner magnetic layer may essentially consist of a ferrite film. The ferrite film may be formed directly on the inner conductive layer by means of an electroless plating method. The ferrite film may essentially consist of an oxide metal composition, the metal composition being represented by the formula of FeaNibZncCod, where: a+b+c+d=3.0; 2.1≦a≦2.7; 0.1≦b≦0.3; 0.1≦c≦0.7; and 0≦d≦0.15.

摘要翻译： 多层印刷电路板包括基本由磁性材料组成的内部磁性层。 内部磁性层可以通过化学键或范德华力的作用形成。 内磁性层可以包括多个磁性单元，每个磁性单元提供磁性，并且可以通过使用强相互作用将磁性单元彼此磁耦合而形成。 内部磁性层可以基本上由铁氧体膜组成。 铁氧体膜可以通过化学镀方法直接形成在内导电层上。 铁氧体膜可以基本上由氧化物金属组合物组成，金属组成由式FeaNibZncCod表示，其中：a + b + c + d = 3.0; 2.1＆nlE; a＆nlE; 2.7; 0.1＆nlE; b＆nlE; 0.3; 0.1＆nlE; c＆nlE; 0.7; 和0＆nlE; d＆nlE; 0.15。

公开(公告)号：US07438946B2

公开(公告)日：2008-10-21

申请号：US11634402

申请日：2006-12-06

申请人： Koichi Kondo ,  Okikuni Takahata ,  Tatsuya Chiba ,  Hiroshi Ono ,  Shigeyoshi Yoshida ,  Masanori Abe ,  Masahiro Yamaguchi

发明人： Koichi Kondo ,  Okikuni Takahata ,  Tatsuya Chiba ,  Hiroshi Ono ,  Shigeyoshi Yoshida ,  Masanori Abe ,  Masahiro Yamaguchi

IPC分类号： B05D5/12

CPC分类号： H01F41/24 ,  G11B5/70652 ,  H01F10/20 ,  H05K1/0233 ,  Y10T428/12465 ,  Y10T428/32 ,  Y10T428/325

摘要： A ferrite film is formed by regularly arranging constituents such as magnetized grains or one analogous to that. In the ferrite film, the constituents have at least one of the uniaxial anisotropy and the multiaxial anisotropy. The ferrite film has the magnetic anisotropy or the magnetic isotropy. The ferrite film is formed by the use of the plating method in the presence of a magnetic field. Furthermore, an electromagnetic noise suppressor includes the ferrite film.

摘要翻译： 铁氧体膜通过规则地排列诸如磁化颗粒的组分或类似的那些形成。 在铁氧体膜中，成分具有单轴各向异性和多轴各向异性中的至少一种。 铁氧体膜具有磁各向异性或磁各向同性。 在存在磁场的情况下，通过使用电镀法形成铁氧体膜。 此外，电磁噪声抑制器包括铁氧体膜。

公开(公告)号：US20070231614A1

公开(公告)日：2007-10-04

申请号：US11717386

申请日：2007-03-13

申请人： Koichi Kondo ,  Hiroshi Ono ,  Shigeyoshi Yoshida

发明人： Koichi Kondo ,  Hiroshi Ono ,  Shigeyoshi Yoshida

IPC分类号： G11B5/708 ,  G08B13/14

CPC分类号： C22C38/105 ,  C22C38/002

摘要： A ferrite material is disclosed, consisting of an oxide metal composition, the metal composition having the formula of FeaNibZncCod, where: a+b+c+d=3.0; 2.1≦a≦2.7; 0≦b≦0.4; 0≦c≦0.4; and 0.1≦d≦0.5. A ferrite film is made of the ferrite material. Preferably, the ferrite film is formed by a ferrite plating method to have a thickness of 30 μm or less and an aspect ratio of 30 or more. The ferrite film is arranged or provided in the vicinity of an antenna conductor of a radio frequency identification tag. The ferrite film may be in direct contact with the antenna conductor.

摘要翻译： 公开了一种铁氧体材料，其由氧化物金属组合物组成，该金属组合物具有下式的金属组成：具有下式的金属组成： > d ，其中：a + b + c + d = 3.0; 2.1 <= a <= 2.7; 0 <= b <= 0.4; 0 <= c <= 0.4; 和0.1 <= d <= 0.5。 铁氧体膜由铁氧体材料制成。 优选地，通过铁素体电镀法形成厚度为30μm以下，纵横比为30以上的铁氧体膜。 铁氧体膜被布置或设置在射频识别标签的天线导体附近。 铁氧体膜可以与天线导体直接接触。

公开(公告)号：US20050077785A1

公开(公告)日：2005-04-14

申请号：US10502663

申请日：2002-11-11

申请人： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Mitsuharu Sato

发明人： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Mitsuharu Sato

IPC分类号： H01F1/00 ,  H01F1/08 ,  H01F1/18 ,  H01F1/28 ,  H01F1/33 ,  H01P3/08 ,  H05K9/00 ,  H04B3/28 ,  H04B3/30 ,  H04B3/32 ,  H04B15/00

CPC分类号： H05K9/0083 ,  H01F1/0027 ,  H01F1/083 ,  H01F1/18 ,  H01F1/28 ,  H01F1/33 ,  H01P3/081

摘要： A component for suppressing EMI includes a composite magnetic material layer and a composite permanent magnet layer disposed on at least part of the composite magnetic material layer. In the component, the composite magnetic material layer contains an organic binder and a soft magnetic material powder dispersed in the organic binder. The composite permanent magnet layer contains a binder and a permanent magnet powder dispersed in the binder. A bias magnetic field is applied to the composite magnetic material layer from the composite permanent magnet layer.

摘要翻译： 用于抑制EMI的部件包括复合磁性材料层和设置在复合磁性材料层的至少一部分上的复合永久磁铁层。 在该组件中，复合磁性材料层含有分散在有机粘合剂中的有机粘合剂和软磁性材料粉末。 复合永久磁铁层含有分散在粘合剂中的粘合剂和永久磁铁粉末。 从复合永磁体层向复合磁性材料层施加偏置磁场。

公开(公告)号：US06657246B2

公开(公告)日：2003-12-02

申请号：US09927974

申请日：2001-08-10

申请人： Hiroshi Ono ,  Shigeyoshi Yoshida ,  Toshiaki Masumoto

发明人： Hiroshi Ono ,  Shigeyoshi Yoshida ,  Toshiaki Masumoto

IPC分类号： H01L27108

CPC分类号： B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3227 ,  H01L23/16 ,  H01L23/552 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a magnetic random access memory having a memory device portion (33,34,35) using magnetic material, a high-frequency current suppressor (26) is arranged in the vicinity of the magnetic material to suppress a high-frequency current which flows in the memory device portion. The memory device and the high-frequency current suppressor may be collectively molded in a mold body (25) of a plastic resin. It is preferable that the high-frequency current suppressor is made of a thin film of a granular magnetic material which has a composition represented by M-X-Y where M is a magnetic metal element, Y is one element selected from oxygen, nitrogen, and fluorine, and X is an element other than M and Y.

摘要翻译： 在具有使用磁性材料的存储器件部分（33,34,35）的磁性随机存取存储器中，高频电流抑制器（26）被布置在磁性材料附近以抑制流入的高频电流 存储器件部分。 存储装置和高频电流抑制器可以共同模制在塑料树脂的模体（25）中。 优选的是，高频电流抑制器由具有由MXY表示的组成的粒状磁性材料的薄膜制成，其中M是磁性金属元素，Y是选自氧，氮和氟的一种元素，以及 X是除M和Y以外的元素。

公开(公告)号：US07648774B2

公开(公告)日：2010-01-19

申请号：US12283889

申请日：2008-09-16

申请人： Koichi Kondo ,  Okikuni Takahata ,  Tatsuya Chiba ,  Hiroshi Ono ,  Shigeyoshi Yoshida ,  Masanori Abe ,  Masahiro Yamaguchi

发明人： Koichi Kondo ,  Okikuni Takahata ,  Tatsuya Chiba ,  Hiroshi Ono ,  Shigeyoshi Yoshida ,  Masanori Abe ,  Masahiro Yamaguchi

IPC分类号： G11B5/64 ,  B32B15/00 ,  B05D5/12

CPC分类号： H01F41/24 ,  G11B5/70652 ,  H01F10/20 ,  H05K1/0233 ,  Y10T428/12465 ,  Y10T428/32 ,  Y10T428/325

摘要： An electromagnetic noise suppressor including a ferrite film is formed by regularly arranging constituents such as magnetized grains or one analogous to that. In the ferrite film, the constituents have at least one of the uniaxial anisotropy and the multiaxial anisotropy. The ferrite film has the magnetic anisotropy or the magnetic isotropy. The ferrite film is formed by a plating method in the presence of a magnetic field.

摘要翻译： 包括铁氧体膜的电磁噪声抑制器通过规则地排列诸如磁化颗粒的组分或与之类似的方式形成。 在铁氧体膜中，成分具有单轴各向异性和多轴各向异性中的至少一种。 铁氧体膜具有磁各向异性或磁各向同性。 在存在磁场的情况下，通过电镀法形成铁氧体膜。

公开(公告)号：US20090061256A1

公开(公告)日：2009-03-05

申请号：US12283889

申请日：2008-09-16

申请人： Koichi Kondo ,  Okikuni Takahata ,  Tatsuya Chiba ,  Hiroshi Ono ,  Shigeyoshi Yoshida ,  Masanori Abe ,  Masahiro Yamaguchi

发明人： Koichi Kondo ,  Okikuni Takahata ,  Tatsuya Chiba ,  Hiroshi Ono ,  Shigeyoshi Yoshida ,  Masanori Abe ,  Masahiro Yamaguchi

IPC分类号： B32B15/00 ,  C09K3/00 ,  B32B9/00

CPC分类号： H01F41/24 ,  G11B5/70652 ,  H01F10/20 ,  H05K1/0233 ,  Y10T428/12465 ,  Y10T428/32 ,  Y10T428/325

摘要： An electromagnetic noise suppressor including a ferrite film is formed by regularly arranging constituents such as magnetized grains or one analogous to that. In the ferrite film, the constituents have at least one of the uniaxial anisotropy and the multiaxial anisotropy. The ferrite film has the magnetic anisotropy or the magnetic isotropy. The ferrite film is formed by a plating method in the presence of a magnetic field.

摘要翻译： 包括铁氧体膜的电磁噪声抑制器通过规则地排列诸如磁化颗粒的组分或与之类似的方式形成。 在铁氧体膜中，成分具有单轴各向异性和多轴各向异性中的至少一种。 铁氧体膜具有磁各向异性或磁各向同性。 在存在磁场的情况下，通过电镀法形成铁氧体膜。