发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11742057申请日: 2007-04-30
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公开(公告)号: US07868436B2公开(公告)日: 2011-01-11
- 发明人: Hiroki Shiota , Hirotaka Muto , Tetsuo Mizoshiri
- 申请人: Hiroki Shiota , Hirotaka Muto , Tetsuo Mizoshiri
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-132114 20060511
- 主分类号: H01L23/02
- IPC分类号: H01L23/02
摘要:
A semiconductor device includes an insulator substrate mounted on a base plate, the insulator substrate having an upper electrode, semiconductor chips mounted on the insulator substrate, external terminals for establishing external electrical connections of the semiconductor device, wires for establishing electrical connections among the external terminals, the upper electrode and the semiconductor chips, a case accommodating the insulator substrate, the semiconductor chips, the external terminals and the wires which are sealed by a sealing material filled in the case, a lid for protecting an upper part of the sealing material, and an insulative low electrification covering fitted on each wire, the low electrification covering having a lesser tendency to produce an electric charge buildup than the sealing material.
公开/授权文献
- US20070284719A1 SEMICONDUCTOR DEVICE 公开/授权日:2007-12-13
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