公开(公告)号：US20230318207A1

公开(公告)日：2023-10-05

申请号：US18001814

申请日：2021-06-14

Applicant: Heraeus Nexensos GmbH

Inventor： Matthias MUZIOL ,  Martin BLEIFUß

IPC: H01R4/02 ,  H01R4/12 ,  H01L23/00

CPC classification number: H01R4/023 ,  H01L2924/351 ,  H01L24/43 ,  H01L24/49 ,  H01L24/85 ,  H01L24/45 ,  H01L2224/45147 ,  H01L2224/45144 ,  H01L2224/45155 ,  H01L2224/45124 ,  H01L2224/45026 ,  H01L2224/49111 ,  H01L2224/78252 ,  H01L2224/8584 ,  H01L24/78 ,  H01L2224/85203 ,  H01L2224/78315 ,  H01R2201/20 ,  H01L2224/43822 ,  H01L2224/45639 ,  H01L2224/45139 ,  H01L2224/45565 ,  H01L2224/45691 ,  H01R4/12

Abstract: The invention relates to an electrical element having at least one functional region and a contact surface, wherein a connecting element is arranged on the contact surface, wherein the connecting element comprises a stranded wire coated with sintered material, wherein the stranded wire is connected, in particular sintered, to the contact surface by a sintered material. Furthermore, the invention relates to a method for producing the electrical element according to the invention.

公开(公告)号：US20180138143A1

公开(公告)日：2018-05-17

申请号：US15852876

申请日：2017-12-22

Applicant: LOCKHEED MARTIN CORPORATION

Inventor： Randall Mark STOLTENBERG ,  Alfred A. ZINN

IPC: H01L23/00

CPC classification number: H01L24/85 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45193 ,  H01L2224/45664 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49096 ,  H01L2224/49175 ,  H01L2224/7815 ,  H01L2224/7825 ,  H01L2224/78301 ,  H01L2224/78601 ,  H01L2224/78611 ,  H01L2224/8502 ,  H01L2224/851 ,  H01L2224/85205 ,  H01L2224/8584 ,  H01L2224/8593 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2224/05599 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2224/85399

Abstract: Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

公开(公告)号：US09859256B1

公开(公告)日：2018-01-02

申请号：US15335331

申请日：2016-10-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Federico Giovanni Ziglioli

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56

CPC classification number: H01L25/0657 ,  H01L21/565 ,  H01L23/3121 ,  H01L24/09 ,  H01L24/43 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2224/85345 ,  H01L2224/8584 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06568

Abstract: An integrated circuit package with improved reliability and methods for creating the same are disclosed. More specifically, integrated circuit packages are created using one or more sacrificial layers that provide support for ink printed wires prior to package processing, but are removed during package processing. Once each of the sacrificial layers is removed, molding compound is placed around each ink printed wire, which may have a substantially rectangular cross section that can vary in dimension along a length of a given wire. While substantially surrounding each wire in and of itself improves reliability, removing non-conductive paste, fillets, or other adhesive materials also minimizes adhesion issues between the molding compound and those materials, which increases the bond of the molding compound to the package and its components. The net result is a more reliable integrated circuit package that is less susceptible to internal cracking and wire damage.

公开(公告)号：US09685349B2

公开(公告)日：2017-06-20

申请号：US15178930

申请日：2016-06-10

Applicant: The United States of America, as represented by the Secretary of the Navy

Inventor： Scott A. Mathews ,  Iyoel Beniam ,  Alberto Piqué

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L24/48 ,  H01L21/4828 ,  H01L21/76885 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/29147 ,  H01L2224/43001 ,  H01L2224/435 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45147 ,  H01L2224/4805 ,  H01L2224/48101 ,  H01L2224/4814 ,  H01L2224/48472 ,  H01L2224/85039 ,  H01L2224/8584 ,  H01L2224/8585 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

公开(公告)号：US09087833B2

公开(公告)日：2015-07-21

申请号：US14093126

申请日：2013-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baik-woo Lee ,  Seong-woon Booh

IPC: H01L29/45 ,  H01L29/78 ,  H01L29/739 ,  H01L23/498 ,  H01L23/373 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H01L29/20

CPC classification number: H01L23/49844 ,  H01L23/3735 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/072 ,  H01L25/18 ,  H01L29/2003 ,  H01L29/7393 ,  H01L2224/03436 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05109 ,  H01L2224/05111 ,  H01L2224/05113 ,  H01L2224/05116 ,  H01L2224/05117 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05163 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05183 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/0603 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/83203 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85801 ,  H01L2224/8584 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/13033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01072 ,  H01L2924/01052 ,  H01L2924/014 ,  H01L2224/83205

Abstract: A power semiconductor device may comprise: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; and/or a wire between the pad layer and the lower structure. The solder layer may be electrically connected to a first electrode of the semiconductor structure.

Abstract translation: 功率半导体器件可以包括：下部结构; 下部结构上的焊料层; 焊料层上的半导体结构; 半导体结构上的接触层; 接触层上的垫层; 和/或垫层和下部结构之间的线。 焊料层可以电连接到半导体结构的第一电极。

公开(公告)号：US08587116B2

公开(公告)日：2013-11-19

申请号：US12894645

申请日：2010-09-30

Applicant: Olaf Hohlfeld ,  Reinhold Bayerer

Inventor： Olaf Hohlfeld ,  Reinhold Bayerer

IPC: H01L23/34 ,  H01L23/495 ,  H01L23/053

CPC classification number: H01L23/3735 ,  H01L23/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

Abstract: A power semiconductor module is fabricated by providing a base with a metal surface and an insulating substrate comprising an insulation carrier having a bottom side provided with a bottom metallization layer. An insert exhibiting a wavy structure is provided. The insert is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom side metallization layer and insert by means of a solder packing all interstices between the metal surface and bottom side metallization layer with the solder.

Abstract translation: 通过提供具有金属表面的基底和包括具有设置有底部金属化层的底侧的绝缘载体的绝缘基底来制造功率半导体模块。 提供具有波浪形结构的插入件。 插入件位于绝缘载体和金属表面之间，然后将金属表面焊接到底侧金属化层，并通过焊料填充金属表面和底侧金属化层之间的所有间隙与焊料插入。

公开(公告)号：US08446726B2

公开(公告)日：2013-05-21

申请号：US12914171

申请日：2010-10-28

Applicant: Ralf Schloerke ,  Thilo Stolze

Inventor： Ralf Schloerke ,  Thilo Stolze

IPC: H05K7/20 ,  H01L23/34 ,  F28F7/00

CPC classification number: H01L23/24 ,  H01L23/10 ,  H01L23/367 ,  H01L23/3735 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/34 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/48132 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  Y10T29/41 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A power semiconductor module includes a module housing with a sealing ring on its top side. The sealing ring, in co-operation with the module housing and a printed circuit board attached to the power semiconductor module, hermetically seals feed-through locations at the top side of the module housing for feeding through electric terminals of the power semiconductor module. On the bottom side of the module housing a sealing ring hermetically seals the bottom side of the module housing.

Abstract translation: 功率半导体模块包括在其顶侧具有密封环的模块壳体。 与模块壳体配合的密封环和连接到功率半导体模块的印刷电路板密封地密封模块壳体顶侧的馈通位置，以通过功率半导体模块的电端子供电。 在密封环的模块的底侧上，密封环密封模块壳体的底侧。

公开(公告)号：US20080160183A1

公开(公告)日：2008-07-03

申请号：US11965810

申请日：2007-12-28

Applicant: Eiichi Ide ,  Toshiaki Morita ,  Yusuke Yasuda ,  Hiroshi Hozoji

Inventor： Eiichi Ide ,  Toshiaki Morita ,  Yusuke Yasuda ,  Hiroshi Hozoji

IPC: H01B1/08 ,  B05D5/12 ,  B22F7/04

CPC classification number: H01B1/02 ,  B22F7/04 ,  H01B1/08 ,  H01L23/3735 ,  H01L23/3737 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/27334 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8484 ,  H01L2224/85205 ,  H01L2224/8584 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/2076 ,  H05K1/097 ,  H05K3/321 ,  H05K2201/0224 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/83205 ,  H01L2924/00012

Abstract: There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 μm as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 μm and the silver oxide particles.

Abstract translation: 提供一种导电烧结层形成组合物和导电烧结层形成方法，其可以通过烧结具有有机物质的金属纳米颗粒的烧结来加速烧结或接合的过程，从而降低加热温度并缩短加热时间。 形成导电烧结层的组合物可以通过利用颗粒可以通过将氧化银与涂覆有机物质的金属颗粒混合并且与烧结相比具有1nm至5μm的颗粒尺寸而在低温下烧结的现象获得 物质。 本发明的导电性烧结层形成用组合物的特征在于，其含有表面被有机物质覆盖，粒径为1nm〜5μm的金属粒子和氧化银粒子。

公开(公告)号：US09881895B2

公开(公告)日：2018-01-30

申请号：US15233912

申请日：2016-08-10

Applicant: LOCKHEED MARTIN CORPORATION

Inventor： Randall Mark Stoltenberg ,  Alfred A. Zinn

IPC: H01L29/00 ,  H01L23/00

CPC classification number: H01L24/85 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45193 ,  H01L2224/45664 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49096 ,  H01L2224/49175 ,  H01L2224/7815 ,  H01L2224/7825 ,  H01L2224/78301 ,  H01L2224/78601 ,  H01L2224/78611 ,  H01L2224/8502 ,  H01L2224/851 ,  H01L2224/85205 ,  H01L2224/8584 ,  H01L2224/8593 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2224/05599 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2224/85399

Abstract: Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

公开(公告)号：US20170221851A1

公开(公告)日：2017-08-03

申请号：US15489958

申请日：2017-04-18

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Scott A. Mathews ,  Iyoel Beniam ,  Alberto Piqué

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/48

CPC classification number: H01L24/48 ,  H01L21/4828 ,  H01L21/76885 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/29147 ,  H01L2224/43001 ,  H01L2224/435 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45147 ,  H01L2224/4805 ,  H01L2224/48101 ,  H01L2224/4814 ,  H01L2224/48472 ,  H01L2224/85039 ,  H01L2224/8584 ,  H01L2224/8585 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.