公开(公告)号：US20240350690A1

公开(公告)日：2024-10-24

申请号：US18685635

申请日：2022-10-25

Applicant: Coventya, Inc.

Inventor： Ambrose Schaffer ,  Jean Laplante ,  Matthew Wojcik

IPC: A61L2/238 ,  A01N59/20 ,  A01P1/00 ,  A61L101/26 ,  C22C19/00 ,  C22C19/03 ,  C23C18/16 ,  C23C18/50

CPC classification number: A61L2/238 ,  A01N59/20 ,  A01P1/00 ,  C22C19/002 ,  C22C19/03 ,  C23C18/1646 ,  C23C18/50 ,  A61L2101/26

Abstract: An electroless nickel-copper-phosphorous coating includes at least about 30% by weight Cu: about 5% to about 15% by weight P; and the balance Ni, with incidental impurities. The electroless nickel-copper-phosphorus coating exhibits antipathogenic properties and enhanced wear when deposited on a substrate.

公开(公告)号：US12116671B2

公开(公告)日：2024-10-15

申请号：US17614222

申请日：2020-09-11

Applicant: SHOWA DENKO K.K.

Inventor： Akira Furuya ,  Tadaaki Kojima ,  Hiroshi Suzuki

IPC: C23C18/16 ,  B32B15/01 ,  C23C18/44 ,  C23C18/50 ,  C23C28/02 ,  C25D3/12 ,  H01L21/687

CPC classification number: C23C18/1651 ,  B32B15/015 ,  C23C18/1637 ,  C23C18/1653 ,  C23C18/1689 ,  C23C18/44 ,  C23C18/50 ,  C23C28/021 ,  C25D3/12 ,  H01L21/68757

Abstract: A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a fluorinated passive film having a thickness of 8 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

公开(公告)号：US11965045B2

公开(公告)日：2024-04-23

申请号：US18319746

申请日：2023-05-18

Applicant: Ford Global Technologies, LLC

Inventor： Xiaojiang Wang ,  Shannon Christine Bollin ,  Robert D. Bedard ,  Matthew Cassoli ,  Ellen Cheng-Chi Lee

IPC: C08F220/18 ,  B29C64/129 ,  B33Y10/00 ,  B33Y70/00 ,  C08F2/48 ,  C08F216/12 ,  C08F222/10 ,  C23C18/16 ,  C23C18/20 ,  C23C18/32 ,  C23C18/38 ,  C23C18/50

CPC classification number: C08F220/1808 ,  C08F2/48 ,  C08F216/125 ,  C08F220/1804 ,  C08F222/102 ,  C23C18/1641 ,  C23C18/1651 ,  C23C18/2013 ,  C23C18/32 ,  C23C18/38 ,  C23C18/50 ,  B29C64/129 ,  B33Y10/00 ,  B33Y70/00

Abstract: A method of forming an etched part includes forming a substrate including a thermoset resin and etching a surface of the substrate. The thermoset resin includes a vat photopolymerization (VPP) thermoset resin and at least one of an etchable phase and etchable particles disposed within the VPP thermoset resin. The etching removes the etchable phase from the VPP thermoset resin at the surface of the substrate such that a plurality of micro-mechanical bonding sites are formed on an etched surface of the substrate.

公开(公告)号：US10053746B1

公开(公告)日：2018-08-21

申请号：US15339472

申请日：2016-10-31

Applicant: Russell B Jones ,  Robert J. Wright

Inventor： Russell B Jones ,  Robert J. Wright

IPC: C23C14/32 ,  C21D9/00 ,  B23P6/00 ,  C23F17/00 ,  C23F4/00 ,  C23C14/02 ,  C23C14/22 ,  C23C18/50 ,  C23C18/18 ,  B24B1/00 ,  F16D41/06

CPC classification number: C21D9/0068 ,  B23P6/00 ,  B24B1/00 ,  C23C14/022 ,  C23C14/028 ,  C23C14/0641 ,  C23C14/325 ,  C23C14/5886 ,  C23C18/1605 ,  C23C18/1692 ,  C23C18/1806 ,  C23C18/1844 ,  C23C18/50 ,  F16D2041/0603 ,  F16D2250/0038 ,  F16D2250/0046

Abstract: A method of repairing a worn carburized surface on a sprag clutch comprising the steps of: grinding the worn carburized surface of the sprag clutch to prepare the surface for metallurgical bonding; place the worn carburized surface in a PVD Cathodic Arc chamber; preheat the worn carburized surface to remove moisture and provide for a good metallurgical bonding surface; reverse sputter clean the surface to remove any surface oxide; apply a first coating layer using the PVD process to a maximum thickness; change the coating macro topology by polishing the coated surface; apply a second coating layer using the PVD process to a maximum thickness; and, grind or polish the coating to a desired dimension.

公开(公告)号：US20180174720A1

公开(公告)日：2018-06-21

申请号：US15380513

申请日：2016-12-15

Applicant: National Cheng Kung University

Inventor： Wen-Hsi Lee

IPC: H01C17/00 ,  B05D1/02 ,  C23C18/54 ,  H01C17/28 ,  H01C1/01

CPC classification number: H01C17/006 ,  B05D1/02 ,  C23C18/50 ,  C23C18/54 ,  C25D3/562 ,  H01C1/01 ,  H01C17/281

Abstract: Two methods are provided to make aluminum terminal electrodes for chip resistors. For a chip resistor having a high resistance, the structure is not changed but the aluminum terminal electrode must have a high solid content, including a high aluminum content and a high glass content. For porous-aluminum terminal electrodes applied to a chip resistor having a low resistance, a new structure is formed to change current-conducting paths through different sizes of a protecting layer and a resistor layer. Therein, original paths conducting to the resistor layer through front terminal electrodes are changed into new paths conducting to the resistor layer through side terminal electrodes.

公开(公告)号：US20180171858A1

公开(公告)日：2018-06-21

申请号：US15897393

申请日：2018-02-15

Applicant: Hille & Müller GmbH

Inventor： Annette BORISCH ,  Philip SCHMITZ ,  Ken-Dominic FLECHTNER ,  Martin SCHWAGEREIT

IPC: F01N13/16 ,  C21D1/26 ,  F01N3/28 ,  C25D9/12 ,  C25D5/12 ,  C25D5/50 ,  C21D9/52 ,  C22F1/04 ,  C25D3/12 ,  C25D5/36 ,  C25D5/44 ,  F02M37/00 ,  C25D9/10

CPC classification number: F01N13/16 ,  B32B15/013 ,  B32B15/015 ,  B32B15/017 ,  B32B15/04 ,  B32B15/043 ,  B32B15/18 ,  B32B15/20 ,  C21D1/26 ,  C21D9/52 ,  C22F1/04 ,  C23C18/04 ,  C23C18/08 ,  C23C18/1204 ,  C23C18/1225 ,  C23C18/1295 ,  C23C18/1637 ,  C23C18/1646 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1692 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/36 ,  C23C18/50 ,  C23C18/52 ,  C23C18/54 ,  C23C28/021 ,  C23C28/023 ,  C23C28/34 ,  C23C30/00 ,  C23C30/005 ,  C25D3/12 ,  C25D5/12 ,  C25D5/36 ,  C25D5/44 ,  C25D5/50 ,  C25D9/10 ,  C25D9/12 ,  F01N3/281 ,  F01N2510/08 ,  F01N2530/02 ,  F01N2530/04 ,  F01N2530/06 ,  F02M37/0017 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12771 ,  Y10T428/12806 ,  Y10T428/12826 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12951 ,  Y10T428/12972 ,  Y10T428/12979 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265

Abstract: A method for producing a corrosion resistant metal substrate and corrosion resistant metal substrate provided thereby. The method involves forming a plated substrate including a metal substrate provided with a nickel layer or with a nickel and cobalt layer followed by electrodepositing a molybdenum oxide layer from an aqueous solution onto the plated substrate, which is subsequently subjected to an annealing step in a reducing atmosphere to reduce the molybdenum oxide in the molybdenum oxide layer to molybdenum metal in a reduction annealing step and to form a diffusion layer which contains nickel and molybdenum, and optionally cobalt.

公开(公告)号：US10000038B2

公开(公告)日：2018-06-19

申请号：US15032109

申请日：2014-10-27

Applicant: TOYO KOHAN CO., LTD.

Inventor： Nobuaki Mukai ,  Tomoyuki Tsuruda ,  Takahiro Yoshida

IPC: B32B15/00 ,  B32B15/01 ,  C23C18/50 ,  H01M8/0208 ,  H01M8/0228 ,  C23C22/50 ,  C23C22/83 ,  C23C28/00 ,  H01M8/1018

CPC classification number: B32B15/015 ,  C23C18/50 ,  C23C22/50 ,  C23C22/83 ,  C23C28/34 ,  H01M8/0208 ,  H01M8/0228 ,  H01M2008/1095 ,  Y10T428/12861

Abstract: Provided is an alloy plate coated material including a base material, and an alloy plate layer which is formed on the base material to constitute an outermost layer and is formed from a M1-M2-M3 alloy (provided that M1 is at least one element selected from Ni, Fe, Co, Cu, Zn and Sn; M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and Ru; and M3 is at least one element selected from P and B), in which the alloy plate layer has a molar ratio of M1 to M2 (M1/M2) of 0.005 to 0.5.

公开(公告)号：US09905376B2

公开(公告)日：2018-02-27

申请号：US15318042

申请日：2015-07-15

Applicant: NANTONG MEMTECH TECHNOLOGIES CO., LTD.

Inventor： Huisheng Han ,  Zhenxing Wang ,  Yang Ding ,  Hongmei Zhang

IPC: H01H1/021 ,  H01H11/04 ,  H01H11/06 ,  C23C18/16 ,  C23C18/18 ,  C23C18/36 ,  C23C18/50 ,  C23C18/52 ,  C23C18/48 ,  C25D3/14 ,  C25D3/56 ,  C25D7/00

CPC classification number: H01H1/021 ,  C23C18/1633 ,  C23C18/1692 ,  C23C18/1806 ,  C23C18/1844 ,  C23C18/36 ,  C23C18/48 ,  C23C18/50 ,  C23C18/52 ,  C25D3/14 ,  C25D3/562 ,  C25D7/00 ,  H01H11/041 ,  H01H11/06 ,  H01H2011/046

Abstract: An arc-ablation resistant switch contact and a preparation method thereof is disclosed. The switch contact is a complex having a plurality of layers of layered structure, wherein a first layer is a hydrophobic rubber layer, a second layer is an adhesive layer, a third layer is a sheet metal layer, a fourth layer is an adhesive layer, and a fifth layer is a metal plated layer; wherein, the fifth layer of metal plated layer is formed by dipping a complex of the first layer, the second layer, the third layer and the fourth layer in a chemical plating bath containing refractory metal elements, and depositing on surfaces of the second layer, the third layer and the fourth layer in the complex by a chemical deposition method.

公开(公告)号：US09896765B2

公开(公告)日：2018-02-20

申请号：US15112205

申请日：2015-01-14

Applicant: Atotech Deutschland GmbH

Inventor： Boris Alexander Janssen ,  Donny Lautan

IPC: B05D3/10 ,  C23C18/32 ,  C23C18/18 ,  C23C18/16 ,  C23C18/50 ,  C23F1/30 ,  C23F1/02 ,  C23F1/44 ,  H05K3/26 ,  H05K3/18 ,  H05K3/24 ,  C23C18/42

CPC classification number: C23C18/32 ,  C23C18/1608 ,  C23C18/1841 ,  C23C18/42 ,  C23C18/50 ,  C23F1/02 ,  C23F1/30 ,  C23F1/44 ,  H05K3/187 ,  H05K3/244 ,  H05K3/26

Abstract: The present invention discloses a process for electroless plating of a metal or metal alloy onto copper features of an electronic device such as a printed circuit board which suppresses undesired skip plating and extraneous plating. The process comprises the steps i) providing such a substrate, ii) activating of the copper features with noble metal ions; iii) removing excessive noble metal ions or precipitates formed thereof with an aqueous pre-treatment composition comprising an acid, a source for halide ions and an additive selected from the group consisting of thiourea, thiourea derivatives and polymers comprising thiourea groups, and iv) electroless plating of a metal or metal alloy layer.

公开(公告)号：US20180002812A1

公开(公告)日：2018-01-04

申请号：US15541879

申请日：2015-03-17

Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.

Inventor： Daigo WATANABE ,  Takashi ARAI ,  Hideki YAMAGUCHI ,  Wataru MURONO ,  Taiji TORIGOE ,  Masahiro YAMADA

IPC: C23C18/50 ,  F04D29/02 ,  C23C18/16 ,  F04D29/28 ,  F02M26/04

CPC classification number: C23C18/50 ,  C23C18/1646 ,  F02M26/04 ,  F04D29/023 ,  F04D29/284 ,  F05D2230/31 ,  F05D2300/121 ,  F05D2300/173 ,  F05D2300/5021 ,  F05D2300/604

Abstract: An impeller for a rotary machine includes: a base material of the impeller comprising Al or an Al alloy; a surface layer for the impeller formed by an electroless plating layer comprising a Ni—P based alloy; and an under layer disposed between the base material and the surface layer, the under layer having a smaller Vickers hardness than the surface layer.