MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS
    8.
    发明申请
    MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS 有权
    包含三元金属元素的包含目标

    公开(公告)号:US20140102880A1

    公开(公告)日:2014-04-17

    申请号:US13856617

    申请日:2013-04-04

    申请人: H.C. STARCK, INC.

    IPC分类号: C23C14/34

    摘要: The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target while the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably is a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.5 to 45 atomic percent of a second metal element selected from the group consisting of niobium and vanadium; and 0.5 to 45 atomic percent of a third metal element selected from the group consisting of tantalum, chromium, vanadium, niobium, and titanium.

    摘要翻译: 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤:将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 当溅射靶位于真空室(例如,使用磁场和/或电场)时,从溅射靶的表面去除原子。 沉积层优选是包含约50原子%或更多的钼,0.5至45原子%的选自铌和钒的第二金属元素的含钼合金; 和0.5〜45原子%的选自钽,铬,钒,铌和钛的第三金属元素。