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    Protective Coating on Trench Features of a Wafer and Method of Fabrication Thereof
    2.
    发明申请
    Protective Coating on Trench Features of a Wafer and Method of Fabrication Thereof 有权

    公开(公告)号：US20180002165A1

    公开(公告)日：2018-01-04

    申请号：US15196395

    申请日：2016-06-29

    申请人： Akustica, Inc. ,  Robert Bosch GmbH

    发明人： Mikko VA Suvanto

    IPC分类号： B81B7/00 ,  B81C1/00 ,  H01L23/00

    CPC分类号： B81B7/0058 ,  B81B2203/033 ,  B81C1/00404 ,  B81C1/00825 ,  B81C1/00896 ,  B81C2201/053 ,  H01L21/78 ,  H01L23/562

    摘要： A coating for protecting a wafer from moisture and debris due to dicing, singulating, or handling the wafer is provided. A semiconductor sensor device comprises a wafer having a surface and at least one trench feature and the protective coating covering the trench feature. The trench feature comprises a plurality of walls and the walls are covered with the protective coating, wherein the walls of the trench feature are formed as a portion of the semiconductor sensor device. The semiconductor sensor device further comprises a patterned mask formed on the wafer before the trench feature is formed, wherein the protective coating is formed directly to the trench feature and the patterned mask. The semiconductor sensor device is selected from a group consisting of a MEMS die, a sensor die, a sensor circuit die, a circuit die, a pressure die, an accelerometer, a gyroscope, a microphone, a speaker, a transducer, an optical sensor, a gas sensor, a bolometer, a giant megnetoresistive sensor (GMR), a tunnel magnetoresistive (TMR) sensor, an environmental sensor, and a temperature sensor.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160202473A1

    公开(公告)日：2016-07-14

    申请号：US15077105

    申请日：2016-03-22

    申请人： SUMITOMO PRECISION PRODUCTS CO., LTD.

    发明人： Ryohei UCHINO ,  Gen MATSUOKA

    IPC分类号： G02B26/08 ,  B81B3/00

    CPC分类号： B81C1/00492 ,  B81B3/0086 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/00404 ,  B81C1/00603 ,  B81C2201/0102 ,  B81C2201/0132 ,  B81C2201/0198 ,  G02B26/0841

    摘要： A mirror device includes a frame body, a mirror configured to tilt about a Y-axis with respect to the frame body, a fixed inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction along the Y-axis and provided at the frame body, and a movable inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction and provided at the mirror, the electrodes fingers of the fixed inner comb electrode and the movable inner comb electrode being alternately arranged. The mirror includes a mirror body and an extension extending from the mirror body. Some of the electrode fingers of the movable inner comb electrode are provided at the mirror body, and another electrode fingers of the movable inner comb electrode are provided at the extension.

    摘要翻译： 反射镜装置包括框架体，配置成相对于框架体围绕Y轴倾斜的反射镜，固定的内梳状电极，包括沿着Y轴布置在排列方向上的多个电极指， 框体和可动内梳状电极，其包括沿着排列方向布置并设置在反射镜处的多个电极指，固定内梳电极和可移动​​内梳电极的电极指交替布置。 镜子包括镜体和从镜体延伸的延伸部分。 可动内梳电极的一些电极指设置在镜体上，可移动内梳电极的另一电极指在延伸部处设置。

    METHOD FOR PRODUCING NANOIMPRINT MOLD
    4.
    发明申请
    METHOD FOR PRODUCING NANOIMPRINT MOLD 有权
    生产纳米薄膜模具的方法

    公开(公告)号：US20160167256A1

    公开(公告)日：2016-06-16

    申请号：US14436627

    申请日：2013-11-29

    申请人： DAI NIPPON PRINTING CO., LTD.

    发明人： Takeshi SAKAMOTO ,  Yusuke KAWANO ,  Mikio ISHIKAWA ,  Yoichi HITOMI

    IPC分类号： B29C33/38 ,  G03F7/00

    CPC分类号： B29C33/3842 ,  B29C33/38 ,  B29K2995/0026 ,  B81C1/00396 ,  B81C1/00404 ,  B81C1/0092 ,  B82Y40/00 ,  C09K13/00 ,  C23C16/45525 ,  G03F7/0002

    摘要： In the method, a sidewall pattern is formed in a side wall of a first resist pattern that is formed on a second hard mask layer of a base material in which first and second hard mask layers are laminated in the order of description, a second hard mask pattern is formed by etching the second hard mask layer by using the sidewall pattern as a mask, a first hard mask pattern is formed by etching the first hard mask layer by using, as a mask, the second hard mask pattern and a second resist pattern that is formed on the first hard mask layer of the base material, and the first and second fine patterns are formed by etching the base material by using the first hard mask pattern as a mask.

    摘要翻译： 在该方法中，在第一抗蚀剂图案的侧壁上形成侧壁图案，该第一抗蚀剂图案形成在基材的第二硬掩模层上，其中第一和第二硬掩模层按照描述的顺序层叠，第二硬 通过使用侧壁图案作为掩模蚀刻第二硬掩模层来形成掩模图案，通过使用第二硬掩模图案和第二抗蚀剂作为掩模蚀刻第一硬掩模层来形成第一硬掩模图案 形成在基材的第一硬掩模层上的图案，并且通过使用第一硬掩模图案作为掩模蚀刻基材来形成第一和第二细纹图案。

    MEMS device with non-planar features
    5.
    发明授权
    MEMS device with non-planar features 有权
    具有非平面特征的MEMS器件

    公开(公告)号：US09340415B2

    公开(公告)日：2016-05-17

    申请号：US14661830

    申请日：2015-03-18

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： James C. Baker ,  Patrick I. Oden ,  Robert S. Black

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00626 ,  B81B3/001 ,  B81B3/007 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00198 ,  B81C1/00404 ,  B81C2201/0198

    摘要： A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

    摘要翻译： MEMS器件形成有轮廓基底和具有互补轮廓的材料层的相对表面。 在一种制造方法中，在衬底上形成第一光致抗蚀剂层。 使用图案掩模使第一光致抗蚀剂层的选定区域曝光。 第一光致抗蚀剂层的曝光区域被热收缩以用轮廓图案化第一光致抗蚀剂层。 在成型的第一光致抗蚀剂层上形成一层材料。

    METHOD OF MANUFACTURING A MEMS STRUCTURE
    6.
    发明申请
    METHOD OF MANUFACTURING A MEMS STRUCTURE 有权
    制造MEMS结构的方法

    公开(公告)号：US20150336793A1

    公开(公告)日：2015-11-26

    申请号：US14712987

    申请日：2015-05-15

    申请人： MURATA MANUFACTURING CO., LTD.

    发明人： Altti TORKKELI ,  Antti IIHOLA

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00412 ,  B81C1/00373 ,  B81C1/00396 ,  B81C1/00404 ,  B81C1/00531 ,  B81C1/00611

    摘要： A method for creating MEMS structures comprises depositing and patterning a first mask on a wafer in order to define desired first areas to be etched in a first trench etching and desired second areas to be etched in a second trench etching. A first intermediate mask is deposited and patterned on top of the first mask. Recession trenches are etched on parts of the wafer. After the first intermediate mask is removed, first trenches are etched with further etching the recession trenches. The first trenches and the recession trenches are filled with a deposit layer. Part of the deposit layer is removed on second areas. A remainder is left on certain areas, to function as a second mask. A third mask is deposited. The third mask defines the final structure. The parts of the wafer on the second areas are etched in the second trench etching. The masks are then removed.

    摘要翻译： 一种用于创建MEMS结构的方法包括在晶片上沉积和图案化第一掩模，以便在第一沟槽蚀刻中定义要蚀刻的期望的第一区域和在第二沟槽蚀刻中要蚀刻的期望的第二区域。 在第一掩模的顶部上沉积并图案化第一中间掩模。 在晶片的部分上刻蚀了衰退沟槽。 在去除第一中间掩模之后，第一沟槽被蚀刻，进一步蚀刻凹陷沟槽。 第一个沟渠和经济衰退的沟槽上都铺满了一层沉积层。 部分沉积层在第二个区域被去除。 剩余部分留在某些区域，用作第二个掩模。 存放第三个掩模。 第三个掩码定义了最终结构。 在第二沟槽蚀刻中蚀刻第二区域上的晶片的部分。 然后取下面具。

    MEMS DEVICE WITH NON-PLANAR FEATURES
    7.
    发明申请
    MEMS DEVICE WITH NON-PLANAR FEATURES 有权
    具有非平面特征的MEMS器件

    公开(公告)号：US20150266727A1

    公开(公告)日：2015-09-24

    申请号：US14661830

    申请日：2015-03-18

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： James C. Baker ,  Patrick I. Oden ,  Robert S. Black

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00626 ,  B81B3/001 ,  B81B3/007 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00198 ,  B81C1/00404 ,  B81C2201/0198

    摘要： A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

    摘要翻译： MEMS器件形成有轮廓基底和具有互补轮廓的材料层的相对表面。 在一种制造方法中，在衬底上形成第一光致抗蚀剂层。 使用图案掩模使第一光致抗蚀剂层的选定区域曝光。 第一光致抗蚀剂层的曝光区域被热收缩以用轮廓图案化第一光致抗蚀剂层。 在成型的第一光致抗蚀剂层上形成一层材料。

    Method for forming trenches in a semiconductor component
    9.
    发明授权
    Method for forming trenches in a semiconductor component 有权
    在半导体部件中形成沟槽的方法

    公开(公告)号：US08679975B2

    公开(公告)日：2014-03-25

    申请号：US13004599

    申请日：2011-01-11

    申请人： Jochen Reinmuth ,  Barbara Will ,  Heribert Weber

    发明人： Jochen Reinmuth ,  Barbara Will ,  Heribert Weber

    IPC分类号： H01L21/60

    CPC分类号： H01L21/3081 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00404 ,  B81C1/00626 ,  H01L21/0334 ,  H01L21/76229

    摘要： A method is described for creating at least one recess in a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one mask to the semiconductor component, forming at least one lattice having at least one or more lattice openings in the mask over the recess to be formed, the lattice opening or lattice openings being formed as a function of the etching rate and/or the dimensioning of the recess to be formed; forming the recess below the lattice.

    摘要翻译： 描述了一种用于在半导体部件，特别是微机电或电半导体部件中形成至少一个凹部的方法，其具有以下步骤：将至少一个掩模施加到半导体部件，形成至少一个具有至少一个或多个 在要形成的凹部上的掩模中的格子孔，形成作为蚀刻速率和/或要形成的凹部的尺寸的函数的格子孔或格子孔; 在网格下面形成凹陷。

    Directed self-assembly of block copolymers using segmented prepatterns
    10.
    发明申请
    Directed self-assembly of block copolymers using segmented prepatterns 有权
    使用分段预制图的嵌段共聚物的定向自组装

    公开(公告)号：US20100294740A1

    公开(公告)日：2010-11-25

    申请号：US12468391

    申请日：2009-05-19

    申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

    发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

    IPC分类号： H01B13/00 ,  B05D7/24 ,  B05D3/00

    CPC分类号： B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

    摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

    摘要翻译： 例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。 例如，开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻，在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。 在开口中形成离散的，分离的畴，其被去除以形成孔，其可以转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。