公开(公告)号：US20190241425A1

公开(公告)日：2019-08-08

申请号：US16390709

申请日：2019-04-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Lee-Chuan Tseng ,  Chang-Ming Wu ,  Shih-Chang Liu ,  Yuan-Chih Hsieh

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81C1/0092 ,  B81C1/00936 ,  B81C1/00944 ,  B81C1/00952 ,  B81C1/0096 ,  B81C1/00984 ,  B81C1/00992 ,  B81C2201/0132 ,  B81C2201/056

Abstract: The present disclosure involves forming a method of fabricating a Micro-Electro-Mechanical System (MEMS) device. A plurality of openings is formed in a first side of a first substrate. A dielectric layer is formed over the first side of the substrate. A plurality of segments of the dielectric layer fills the openings. The first side of the first substrate is bonded to a second substrate that contains a cavity. The bonding is performed such that the segments of the dielectric layer are disposed over the cavity. A portion of the first substrate disposed over the cavity is transformed into a plurality of movable components of a MEMS device. The movable components are in physical contact with the dielectric the layer. Thereafter, a portion of the dielectric layer is removed without using liquid chemicals.

公开(公告)号：US06514786B1

公开(公告)日：2003-02-04

申请号：US09677879

申请日：2000-10-03

Applicant: Yasuo Yamaguchi ,  Teruya Fukaura ,  Kunihiro Nakamura

Inventor： Yasuo Yamaguchi ,  Teruya Fukaura ,  Kunihiro Nakamura

IPC: H01L2100

CPC classification number: G01P15/125 ,  B81B3/0008 ,  B81B2201/0235 ,  B81C1/0092 ,  B81C2201/112 ,  G01P15/0802

Abstract: Provided is a method of manufacturing an acceleration sensor capable of preventing bonding of a movable electrode and a fixed electrode. A stain film 8 for reducing bonding adsorption force is formed on side surfaces of a movable electrode 1, fixed electrodes 2a and 2b and a frame portion 7. In the case in which the movable electrode 1 and the fixed electrodes 2a and 2b are to be formed of a silicon substrate, it is preferable that an insulating film having irregular bonding of silicon atoms and oxygen atoms and irregular bonding of silicon atoms and nitrogen atoms should be employed for the stain film 8, for example. The formation of the stain film 8 can suppress the bonding between the movable electrode 1 and the fixed electrodes 2a and 2b even if Coulomb force is generated between both electrodes when the silicon substrate and a back side substrate 4 are joined by using an anode junction method.

公开(公告)号：US5658698A

公开(公告)日：1997-08-19

申请号：US378610

申请日：1995-01-26

Applicant: Takayuki Yagi ,  Masatake Akaike

Inventor： Takayuki Yagi ,  Masatake Akaike

IPC: B81B3/00 ,  B81C1/00 ,  G03F7/00 ,  H01H59/00 ,  H01L23/00 ,  H02N1/00 ,  H02N2/00 ,  H02N2/02

CPC classification number: B81C1/0092 ,  B81C1/00936 ,  H01H59/0009 ,  H02N1/006 ,  B81B2203/0118 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2203/031

Abstract: A microstructure comprising a substrate (1), a patterned structure (beam member) (2) suspended over the substrate (1) with an air-space (4) therebetween and supporting structure (3) for suspending the patterned structure (2) over the substrate (1).The microstructure is prepared by using a sacrificial layer (7) which is removed to form the space between the substrate (1) and the patterned structure (2) adhered to the sacrificial layer. In the case of using resin as the material of the sacrificial layer, the sacrificial layer can be removed without causing sticking, and an electrode can be provided on the patterned structure.The microstructure can have application as electrostatic actuator etc., depending on choice of shape and composition.

Abstract translation: 一种微结构，其包括衬底（1），悬挂在衬底（1）上的图案化结构（梁构件）（2），其间具有空气空间（4）和用于将图案化结构（2）悬挂在其上的支撑结构（3） 基板（1）。 通过使用牺牲层（7）来制备微结构，所述牺牲层被除去以形成衬底（1）和附着到牺牲层的图案化结构（2）之间的空间。 在使用树脂作为牺牲层的材料的情况下，可以除去牺牲层而不引起粘附，并且可以在图案化结构上提供电极。 根据形状和组成的选择，微结构可以用作静电致动器等。

公开(公告)号：US5314572A

公开(公告)日：1994-05-24

申请号：US872037

申请日：1992-04-22

Applicant: Theresa A. Core ,  Roger T. Howe

Inventor： Theresa A. Core ,  Roger T. Howe

IPC: B81B3/00 ,  B81C99/00 ,  G01P15/08 ,  G01P15/125 ,  G01P15/13 ,  H01L21/306 ,  H01L21/764 ,  H01L29/84 ,  B29C37/00 ,  B44C1/22 ,  C03C15/00

CPC classification number: B81C1/0092 ,  B81C1/00928 ,  B81C99/004 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  B81B2201/0235 ,  G01P2015/0814

Abstract: A suspended microstructure fabrication process. Photoresist pedestals are inserted in a sacrificial layer between the suspended microstructure and the substrate and photoresist spacers are inserted in the microstructure layer between non contacting portions of the suspended microstructure so that the photoresist pedestals and spacers support the microstructure bridge during the wet etching and drying process used to remove the sacrificial layer.

Abstract translation: 悬浮微结构制造工艺。 将光刻胶基座插入到悬浮的微结构和衬底之间的牺牲层中，并且将光致抗蚀剂间隔物插入到悬浮微结构的非接触部分之间的微结构层中，使得光致抗蚀剂基座和间隔件在湿蚀刻和干燥过程期间支撑微结构桥 用于去除牺牲层。

公开(公告)号：US20170096328A1

公开(公告)日：2017-04-06

申请号：US14873243

申请日：2015-10-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Lee-Chuan Tseng ,  Chang-Ming Wu ,  Shih-Chang Liu ,  Yuan-Chih Hsieh

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81C1/0092 ,  B81C1/00936 ,  B81C1/00944 ,  B81C1/00952 ,  B81C1/0096 ,  B81C1/00984 ,  B81C1/00992 ,  B81C2201/0132 ,  B81C2201/056

Abstract: The present disclosure involves forming a method of fabricating a Micro-Electro-Mechanical System (MEMS) device. A plurality of openings is formed in a first side of a first substrate. A dielectric layer is formed over the first side of the substrate. A plurality of segments of the dielectric layer fills the openings. The first side of the first substrate is bonded to a second substrate that contains a cavity. The bonding is performed such that the segments of the dielectric layer are disposed over the cavity. A portion of the first substrate disposed over the cavity is transformed into a plurality of movable components of a MEMS device. The movable components are in physical contact with the dielectric the layer. Thereafter, a portion of the dielectric layer is removed without using liquid chemicals.

公开(公告)号：US20150368099A1

公开(公告)日：2015-12-24

申请号：US14307877

申请日：2014-06-18

Applicant: Freescale Semiconductor, Inc.

Inventor： Srivatsa G. Kundalgurki ,  Ruben B. Montez ,  Gary Pfeffer

IPC: B81C1/00

CPC classification number: B81C1/00849 ,  B81C1/00134 ,  B81C1/0092 ,  B81C1/00952 ,  B81C2201/0109 ,  B81C2201/0132

Abstract: A method of making a microelectromechanical systems (MEMS) device includes etching away a sacrificial material layer to release a mechanical element of the MEMS device. The MEMS device is formed at least partially on the sacrificial material layer, and the etching leaves a residue in proximity to the mechanical element. The residue is exposed to an anhydrous solution to remove the residue. The residue may be an ammonium fluorosilicate-based residue, and the anhydrous solution may include acetic acid, isopropyl alcohol, acetone, or any anhydrous solution that can effectively dissolve the ammonium fluorosilicate-based residue.

Abstract translation: 制造微机电系统（MEMS）器件的方法包括蚀刻掉牺牲材料层以释放MEMS器件的机械元件。 MEMS器件至少部分地形成在牺牲材料层上，蚀刻在机械元件附近留下残留物。 将残余物暴露于无水溶液中以除去残余物。 残渣可以是氟硅酸铵系残渣，无水溶液可以含有乙酸，异丙醇，丙酮或能够有效溶解氟硅酸铵残渣的任意无水溶液。

公开(公告)号：US20120181249A1

公开(公告)日：2012-07-19

申请号：US13499462

申请日：2010-09-29

Applicant: Masaru Ohto ,  Hiroshi Matsunaga ,  Kenji Yamada

Inventor： Masaru Ohto ,  Hiroshi Matsunaga ,  Kenji Yamada

IPC: H01L21/306 ,  C23F1/14 ,  G03F7/42 ,  C23F1/12

CPC classification number: B81C1/0092 ,  C09K13/00 ,  C23G1/26 ,  H01L21/02057

Abstract: There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

Abstract translation: 提供了一种用于抑制精细金属结构的图案塌陷的处理液，其含有至少一种选自具有12,14或16个碳原子的烷基的咪唑卤化物，具有14或16个烷基的吡啶鎓卤化物 碳原子，具有14,16或18个碳原子的烷基的卤化铵，具有12,14或16个碳原子的烷基的甜菜碱化合物和具有14,16或18个烷基的氧化胺化合物 碳原子，以及使用其制造精细金属结构体的方法。

公开(公告)号：US20090002804A1

公开(公告)日：2009-01-01

申请号：US12163660

申请日：2008-06-27

Applicant: Bangalore R. Natarajan ,  Kasra Khazeni ,  David Heald ,  Rihui He ,  Sriram Akella ,  Evgeni Gousev

Inventor： Bangalore R. Natarajan ,  Kasra Khazeni ,  David Heald ,  Rihui He ,  Sriram Akella ,  Evgeni Gousev

IPC: G02B26/00 ,  H01L21/00

CPC classification number: B81C1/0092 ,  B81B3/0005 ,  B81B2201/047 ,  B81C2201/112 ,  G02B26/001

Abstract: Methods, devices, and systems provide MEMS devices exhibiting at least one of reduced stiction, reduced hydrophilicity, or reduced variability of certain electrical characteristics using MEMS devices treated with water vapor. The treatment is believed to form one or more passivated surfaces on the interior and/or exterior of the MEMS devices. Relatively gentle temperature and pressure conditions ensure modification of surface chemistry without excessive water absorption after removal of sacrificial material to release the MEMS devices.

Abstract translation: 方法，装置和系统提供使用用水蒸汽处理的MEMS装置展现降低的静摩擦，降低的亲水性或某些电气特性的变化性中的至少一个的MEMS装置。 认为处理在MEMS器件的内部和/或外部形成一个或多个钝化表面。 相对温和的温度和压力条件确保在去除牺牲材料以释放MEMS器件之后，不改变表面化学性质而不过度吸水。

公开(公告)号：US07279431B2

公开(公告)日：2007-10-09

申请号：US10464597

申请日：2003-06-18

Applicant: Eric J. Bergman

Inventor： Eric J. Bergman

IPC: H01L21/302

CPC classification number: B81C1/0092 ,  B81C1/00928 ,  B81C2201/117 ,  H01L21/6708

Abstract: An etch release for a MEMS device on a substrate includes etching the substrate with an etchant vapor and a wetting vapor. A thermal bake of the MEMS device, after the etch release may be used to volatilize residues. A supercritical fluid may also be used to remove residual contaminants. The combination of the etchant vapor, such as HF, and the wetting vapor, such as an alcohol vapor, improves the uniformity of the etch undercut on the substrate.

Abstract translation: 衬底上的MEMS器件的蚀刻释放包括用蚀刻剂蒸气和润湿蒸气蚀刻衬底。 在蚀刻释放之后，MEMS器件的热烘烤可用于挥发残留物。 也可以使用超临界流体来除去残留的污染物。 蚀刻剂蒸气（例如HF）和润湿蒸气（例如醇蒸汽）的组合改善了基板上蚀刻底切的均匀性。

公开(公告)号：US06192757B1

公开(公告)日：2001-02-27

申请号：US09457200

申请日：1999-12-06

Applicant: Robert W. K. Tsang ,  Theresa A. Core ,  Steven J. Sherman ,  A. Paul Brokaw

Inventor： Robert W. K. Tsang ,  Theresa A. Core ,  Steven J. Sherman ,  A. Paul Brokaw

IPC: G01P15125

CPC classification number: B81C1/00246 ,  B81B3/001 ,  B81C1/00214 ,  B81C1/0092 ,  B81C99/0035 ,  B81C2201/112 ,  B81C2203/0735 ,  B81C2203/0742 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  G01P2015/0814

Abstract: A monolithic capacitance-type microstructure includes a semiconductor substrate, a plurality of posts extending from the surface of the substrate, a bridge suspended from the posts, and an electrically-conductive, substantially stationary element anchored to the substrate. The bridge includes an element that is laterally movable with respect to the surface of the substrate. The substantially stationary element is positioned relative to the laterally movable element such that the laterally movable element and the substantially stationary element form a capacitor. Circuitry is disposed on the substrate and operationally coupled to the movable element and the substantially stationary element for processing a signal based on a relative positioning of the movable element and the substantially stationary element. A method for fabricating the microstructure and the circuitry is disclosed.

Abstract translation: 单片电容型微结构包括半导体衬底，从衬底的表面延伸的多个柱，悬置在柱上的桥，以及锚定到衬底的导电的，基本上固定的元件。 该桥包括相对于基板的表面可横向移动的元件。 基本上固定的元件相对于横向可移动元件定位，使得横向可移动元件和基本上固定的元件形成电容器。 电路布置在基板上并且可操作地耦合到可移动元件和基本上静止的元件，用于基于可移动元件和基本上静止的元件的相对定位来处理信号。 公开了一种用于制造微结构和电路的方法。