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    TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID
    3.
    发明申请
    TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID 审中-公开
    用于抑制微结构中的图案皱纹的处理液和使用合适处理液的微结构制造方法

    公开(公告)号：US20130161284A1

    公开(公告)日：2013-06-27

    申请号：US13820835

    申请日：2011-07-14

    申请人： Hiroshi Matsunaga ,  Masaru Ohto

    发明人： Hiroshi Matsunaga ,  Masaru Ohto

    IPC分类号： C09K3/00

    CPC分类号： H01L21/0206 ,  B81C1/00825

    摘要： There are provided a processing liquid for suppressing pattern collapse of a microstructure formed of silicon oxide which includes at least one compound selected from the group consisting of a fluoroalkyl group-containing ammonium halide, a fluoroalkyl group-containing betaine compound and a fluoroalkyl group-containing amine oxide compound, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.

    摘要翻译： 提供了一种用于抑制由氧化硅形成的微结构的图案塌陷的处理液，其包括选自含氟烷基的卤化铵，含氟烷基的甜菜碱化合物和含氟烷基的至少一种化合物 氧化胺化合物和水; 以及使用该处理液制造由氧化硅形成的微观结构的方法。

    CLEANING COMPOSITION AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
    5.
    发明申请
    CLEANING COMPOSITION AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 有权
    清洁组合物和生产半导体器件的方法

    公开(公告)号：US20100029085A1

    公开(公告)日：2010-02-04

    申请号：US12530766

    申请日：2008-03-06

    申请人： Hiroshi Matsunaga ,  Masaru Ohto ,  Hideo Kashiwagi ,  Hiroshi Yoshida

    发明人： Hiroshi Matsunaga ,  Masaru Ohto ,  Hideo Kashiwagi ,  Hiroshi Yoshida

    IPC分类号： H01L21/306 ,  H01L21/308 ,  G03F7/42

    CPC分类号： H01L21/31133 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/36 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063

    摘要： A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5% by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided.

    摘要翻译： 一种用于在具有低介电层间绝缘膜和铜布线或铜合金布线的基板上依次层叠有机硅氧烷类薄膜和光致抗蚀剂层的半导体装置的清洗组合物，然后对其进行选择性曝光和显影处理 该主体光致抗蚀剂层形成光致抗蚀剂图案，随后在使用该抗蚀剂图案作为掩模的同时对有机硅氧烷类薄膜和低介电层间绝缘膜进行干蚀刻处理，然后除去有机硅氧烷类薄膜，残留物 通过干蚀刻处理产生的改性光致抗蚀剂，通过干蚀刻处理改性的改性光致抗蚀剂和位于比改性光致抗蚀剂低的层中的未改性光致抗蚀剂层，清洗组合物含有15〜20质量％的过氧化氢，0.0001 至0.003质量％的氨基聚亚甲基膦酸，为0.02〜0.5质量％ 氢氧化钾和水，pH为7.5至8.5。 另外，提供了使用该被检体组合物的半导体装置的制造方法。

    Cleaning liquid and cleaning method
    6.
    发明申请
    Cleaning liquid and cleaning method 审中-公开
    清洗液和清洗方法

    公开(公告)号：US20070099810A1

    公开(公告)日：2007-05-03

    申请号：US11259256

    申请日：2005-10-27

    申请人： Hiroshi Matsunaga ,  Masaru Ohto ,  Hiroshi Yoshida ,  Eiko Kuwabara ,  Ming Fang ,  Lourdes Dominguez

    发明人： Hiroshi Matsunaga ,  Masaru Ohto ,  Hiroshi Yoshida ,  Eiko Kuwabara ,  Ming Fang ,  Lourdes Dominguez

    IPC分类号： C11D3/395 ,  C11D17/00

    CPC分类号： C11D3/0073 ,  C11D3/044 ,  C11D3/43 ,  C11D7/06 ,  C11D7/5004

    摘要： A cleaning liquid which comprises at least one selected from potassium hydroxide or sodium hydroxide in an amount of 0.01 to 10% by weight, water-soluble organic solvent in an amount of 5 to 80% by weight, a corrosion inhibitor at least one selected from the group consisting of group IX metal of the Periodic Table, group IX metal alloy and group XI metal of the Periodic Table in an amount of 0.0001% by weight and water. The present provides a cleaning liquid and a cleaning method both capable of removing photoresists or its deposits and attached articles on the surface of treated substances such as organosiloxane-based anti-reflection film, configuration protective coat or so without corroding the treated substances, particularly low dielectric constant film, group IX metals of the Periodic Table and their alloy, and group XI metals of the Periodic Table.

    摘要翻译： 一种清洗液，其含有0.01〜10重量％的氢氧化钾或氢氧化钠中的至少1种，5〜80重量％的水溶性有机溶剂，至少1种选自 由元素周期表第IX族金属，第IX族金属合金和元素周期表第XI族金属组成的组为0.0001％（重量）和水。 本发明提供一种能够除去光致抗蚀剂或其沉积物和附着物品的清洗液和清洁方法，例如在有机硅氧烷类防反射膜，构型保护层等的表面处理，而不会腐蚀处理物质，特别是低 介电常数薄膜，元素周期表第IX族金属及其合金，以及元素周期表第XI族金属。

    Method of controlling NOx gas emission by hydrogen peroxide
    8.
    发明授权
    Method of controlling NOx gas emission by hydrogen peroxide 失效
    用过氧化氢控制NOx排放的方法

    公开(公告)号：US06475373B1

    公开(公告)日：2002-11-05

    申请号：US09542847

    申请日：2000-04-04

    申请人： Tadashi Shimomura ,  Masaru Ohto ,  Hiroya Watanabe

    发明人： Tadashi Shimomura ,  Masaru Ohto ,  Hiroya Watanabe

    IPC分类号： G01N2726

    CPC分类号： C23G1/086 ,  C23F1/16 ,  C23G1/02

    摘要： Emission of NOx during acid-piclding treatment of metals in an aqueous solution containing at least nitric acid is controlled by the addition of hydrogen peroxide. The addition amount of hydrogen peroxide is minimized to avoid excessive addition by monitoring the potentiostatic electrolytic current of the solution or by combinedly monitoring the potentiostatic electrolytic current and the redox potential of the solution.

    摘要翻译： 通过添加过氧化氢可以控制在至少含有硝酸的水溶液中对金属进行酸蚀处理期间的NOx排放。 通过监测溶液的恒电位电解电流或通过组合监测溶液的恒电位电解电流和氧化还原电位，使过氧化氢的添加量最小化以避免过度添加。

    Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same
    9.
    发明授权
    Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same 有权
    用于抑制细金属结构的图案塌陷的处理液和使用其制造精细金属结构的方法

    公开(公告)号：US09334161B2

    公开(公告)日：2016-05-10

    申请号：US13499462

    申请日：2010-09-29

    申请人： Masaru Ohto ,  Hiroshi Matsunaga ,  Kenji Yamada

    发明人： Masaru Ohto ,  Hiroshi Matsunaga ,  Kenji Yamada

    IPC分类号： H01B13/00 ,  B44C1/22 ,  B81C1/00 ,  C09K13/00 ,  C23G1/26 ,  H01L21/02

    CPC分类号： B81C1/0092 ,  C09K13/00 ,  C23G1/26 ,  H01L21/02057

    摘要： There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

    摘要翻译： 提供了一种用于抑制精细金属结构的图案塌陷的处理液，其含有至少一种选自具有12,14或16个碳原子的烷基的咪唑卤化物，具有14或16个烷基的吡啶鎓卤化物 碳原子，具有14,16或18个碳原子的烷基的卤化铵，具有12,14或16个碳原子的烷基的甜菜碱化合物和具有14,16或18个烷基的氧化胺化合物 碳原子，以及使用其制造精细金属结构体的方法。

    TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID
    10.
    发明申请
    TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID 有权
    用于抑制微结构中的图案皱纹的处理液和使用合适处理液的微结构制造方法

    公开(公告)号：US20130165365A1

    公开(公告)日：2013-06-27

    申请号：US13820899

    申请日：2011-07-14

    申请人： Hiroshi Matsunaga ,  Masaru Ohto

    发明人： Hiroshi Matsunaga ,  Masaru Ohto

    IPC分类号： C11D7/32

    CPC分类号： H01L21/0206 ,  B81C1/00825 ,  C11D7/3209 ,  C11D7/3281

    摘要： There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.

    摘要翻译： 提供了一种用于抑制显微组织的图案塌陷的处理液体，其包括至少一种选自包含具有12,14或16个碳原子的烷基的咪唑鎓卤化物的化合物，含有14个 或16个碳原子和含有16或18个碳原子的烷基的卤化铵和水; 以及使用该处理液制造由氧化硅形成的微观结构的方法。