公开(公告)号：US07416611B2

公开(公告)日：2008-08-26

申请号：US10870173

申请日：2004-06-18

申请人： Eric J. Bergman

发明人： Eric J. Bergman

IPC分类号： B08B3/00

CPC分类号： H01L21/02054 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2203/0288 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/67017 ,  H01L21/6704 ,  H01L21/67051 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K3/3426 ,  Y02P70/613 ,  Y10S134/902 ,  H01L2924/00

摘要： In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas in a liquid stream, spray or jet impinging on the workpiece. The process gas, which may be ozone, is entrained in the liquid via entrainment nozzles. Use of entrainment and diffusion together increases the amount of gas available for reaction at the workpiece surface, increases the reaction rate, and decreases required process times.

摘要翻译： 在用于清洁或处理工件的方法和装置中，工艺气体通过扩散通过工件上的加热液体层与工件接触，并且通过将气体夹带在液体流中，喷射或射流 撞击工件。 可能是臭氧的工艺气体通过夹带喷嘴夹带在液体中。 夹带和扩散的使用一起增加了可在工件表面反应的气体的量，增加了反应速率，并减少了所需的处理时间。

公开(公告)号：US07404863B2

公开(公告)日：2008-07-29

申请号：US10631376

申请日：2003-07-30

申请人： Eric J. Bergman

发明人： Eric J. Bergman

IPC分类号： B08B3/00 ,  B08B3/04

CPC分类号： H01L21/6708 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/3065 ,  H01L21/6704 ,  H01L21/67051 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K3/3426 ,  Y02P70/613 ,  Y10S134/902 ,  H01L2924/00

摘要： A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor are delivered into the process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed with one another before entering the process chamber. The ozone oxidizes the silicon surface of the wafer, while the HF vapor etches the oxidized silicon away from the wafer. The etched oxidized silicon is then removed from the process chamber. As a result, the wafer is thinned, which aids in preventing heat build-up in the wafer, and also makes the wafer easier to handle and cheaper to package. In alternative embodiments, HF may be delivered into the process chamber as an anhydrous gas or in aqueous form.

摘要翻译： 以最小的化学消耗以可控的成本有效的方式稀释硅晶片的方法。 将晶片放置在处理室中，之后将臭氧气体和HF蒸气输送到处理室中以与晶片的硅表面反应。 可以顺序地输送臭氧和HF蒸气，或者可以在进入处理室之前彼此混合。 臭氧氧化晶片的硅表面，而HF蒸气将氧化的硅蚀刻离开晶片。 然后将蚀刻的氧化硅从处理室中取出。 结果，晶片变薄，这有助于防止晶片中的热积聚，并且还使晶片更容易处理并且更便宜的封装。 在替代实施例中，HF可以作为无水气体或以水的形式被输送到处理室中。

公开(公告)号：US07163588B2

公开(公告)日：2007-01-16

申请号：US11005495

申请日：2004-12-06

申请人： Eric J. Bergman

发明人： Eric J. Bergman

IPC分类号： B08B3/00 ,  B08B3/04 ,  B08B3/10

CPC分类号： H01L21/02054 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

摘要： Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered into a stream of process liquid or into the process environment or chamber. Steam may alternatively be used. A layer of liquid or vapor forms on the wafer surface. The ozone moves through the liquid layer via diffusion, entrainment, jetting/spraying or bulk transfer, and chemically reacts with the photoresist, to remove it.

摘要翻译： 使用水，臭氧和碱如氢氧化铵，从具有金属特征的晶片快速除去诸如光致抗蚀剂的污染物。 在室温下进行加工以避免金属腐蚀。 臭氧被输送到过程液体流中或进入过程环境或室。 也可以使用蒸汽。 在晶片表面上形成一层液体或蒸气。 臭氧通过扩散，夹带，喷射/喷涂或大量转移而流过液体层，并与光致抗蚀剂发生化学反应，以除去它。

公开(公告)号：US06869486B2

公开(公告)日：2005-03-22

申请号：US10692829

申请日：2003-10-23

申请人： Ronald G. Breese ,  C. James Bryer ,  Eric J. Bergman ,  Dana R. Scranton

发明人： Ronald G. Breese ,  C. James Bryer ,  Eric J. Bergman ,  Dana R. Scranton

IPC分类号： B08B3/12 ,  B08B9/08 ,  B08B9/32 ,  H01L21/00 ,  B08B3/08 ,  B08B3/10 ,  B08B9/093

CPC分类号： H01L21/67051 ,  B08B9/0861 ,  B08B9/32 ,  Y10S134/902

摘要： In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.

摘要翻译： 在清洁金属离子污染物（特别是铜）的清洁方法中，容器被装载到清洁装置中。 用稀释的螯合剂溶液喷洒容器。 螯合剂溶液从容器中除去金属污染物。 然后用漂洗液如去离子水和表面活性剂漂洗容器。 然后将容器干燥，优选通过施加热和/或热空气运动。

公开(公告)号：US06843857B2

公开(公告)日：2005-01-18

申请号：US10681553

申请日：2003-10-07

申请人： Eric J. Bergman

发明人： Eric J. Bergman

IPC分类号： B08B3/08 ,  B08B7/00 ,  H01L21/02 ,  H01L21/306 ,  B08B3/00

CPC分类号： H01L21/02054 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  Y10S134/902 ,  Y10S438/906

摘要： The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

摘要翻译： 本发明包括用于清洁晶片或其它半导体产品表面的方法。 使用被润湿到表面上的氧化溶液进行氧化。 氧化溶液可以包括水，臭氧，氯化氢，硫酸或过氧化氢中的一种或多种。 漂洗步骤除去氧化溶液并抑制进一步的活性​​。 此后，漂洗后的表面优选进行干燥步骤。 将表面暴露于氧化物去除蒸气以从其中除去半导体氧化物。 氧化物去除蒸气可以包括一种或多种：酸，例如卤化氢，例如氟化氢或氯化氢; 水; 异丙醇 或臭氧。 这些工艺可以使用离心加工和喷涂动作。

公开(公告)号：US06837252B2

公开(公告)日：2005-01-04

申请号：US10418695

申请日：2003-04-18

申请人： Eric J. Bergman

发明人： Eric J. Bergman

IPC分类号： B08B3/00 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B7/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L23/495 ,  H05K3/34 ,  B08B3/10

CPC分类号： H01L21/02054 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/3065 ,  H01L21/6704 ,  H01L21/67051 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K3/3426 ,  Y02P70/613 ,  Y10S134/902 ,  H01L2924/00

摘要： In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.

摘要翻译： 在用于处理工件以从工件的第一表面去除材料的方法中，在条件下将蒸汽引入到第一表面上，使得至少一些蒸汽在第一表面上冷凝并形成液体边界层。 冷凝蒸汽有助于在升高的温度下保持工件的第一表面。 在臭氧扩散通过边界层并与第一表面上的材料反应的条件下，在工件周围设置臭氧。 控制第一表面的温度以保持蒸汽的冷凝。

公开(公告)号：US06830628B2

公开(公告)日：2004-12-14

申请号：US09811925

申请日：2001-03-19

申请人： Eric J. Bergman

发明人： Eric J. Bergman

IPC分类号： B08B304

CPC分类号： H01L21/02054 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  Y10S134/902 ,  Y10S438/906

摘要： The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

摘要翻译： 本发明包括用于清洁晶片或其它半导体产品表面的方法。 使用被润湿到表面上的氧化溶液进行氧化。 氧化溶液可以包括水，臭氧，氯化氢，硫酸或过氧化氢中的一种或多种。 漂洗步骤除去氧化溶液并抑制进一步的活性​​。 此后，漂洗后的表面优选进行干燥步骤。 将表面暴露于氧化物去除蒸气以从其中除去半导体氧化物。 氧化物去除蒸气可以包括一种或多种：酸，例如卤化氢，例如氟化氢或氯化氢; 水; 异丙醇 或臭氧。 这些工艺可以使用离心加工和喷涂动作。

公开(公告)号：US06746565B1

公开(公告)日：2004-06-08

申请号：US09478870

申请日：2000-01-07

申请人： Martin C. Bleck ,  Timothy J. Reardon ,  Eric J. Bergman

发明人： Martin C. Bleck ,  Timothy J. Reardon ,  Eric J. Bergman

IPC分类号： C23F100

CPC分类号： H01L21/68792 ,  H01L21/67075 ,  H01L21/67086

摘要： A semiconductor processing station which utilizes a processing head and processing base which are complementary to enclose a processing chamber. The processing head shown has a rotor with two portions both of which rotate. The rotor has axial movable portions which include a piece holder. The piece holder supports a wafer or other semiconductor piece being processed. The piece holder can be axially extended and retracted relative to a thin membrane which acts as a cover to prevent chemicals from reaching the back side of the wafer during processing.

摘要翻译： 一种半导体处理站，其利用互补的处理头和处理基底来包围处理室。 所示的处理头具有转子，其中两个部分都转动。 转子具有轴向可移动部分，其包括片夹。 片保持器支撑正在处理的晶片或其它半导体片。 片保持器可相对于用作盖的薄膜轴向延伸和缩回，以防止化学品在加工期间到达晶片的背面。

公开(公告)号：US06701941B1

公开(公告)日：2004-03-09

申请号：US09536251

申请日：2000-03-27

申请人： Eric J. Bergman ,  Mignon P. Hess

发明人： Eric J. Bergman ,  Mignon P. Hess

IPC分类号： B08B302

CPC分类号： H01L21/02054 ,  B08B3/02 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/6704 ,  Y10S134/902

摘要： An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

摘要翻译： 提供了一种用于提供处理液和臭氧的混合物用于处理工件表面的设备以及相应的方法。 该装置的优选实施例包括液体供应管线，其用于在容纳处理液体的容器和容纳工件的处理室之间提供流体连通。 设置加热器以直接或间接地加热工件。 优选地，通过加热供给到工件的处理液来加热工件。 一个或多个喷嘴接受来自液体供应管线的处理液并将其喷射到工件的表面上，同时臭氧发生器将臭氧加入到包含工件的环境中。

公开(公告)号：US06273108B1

公开(公告)日：2001-08-14

申请号：US09677929

申请日：2000-10-03

申请人： Eric J. Bergman ,  Mignon P. Hess

发明人： Eric J. Bergman ,  Mignon P. Hess

IPC分类号： B08B302

CPC分类号： H01L21/02054 ,  B08B3/02 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/6704 ,  Y10S134/902

摘要： An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

摘要翻译： 提供了一种用于提供处理液和臭氧的混合物用于处理工件表面的设备以及相应的方法。 该装置的优选实施例包括液体供应管线，其用于在容纳处理液体的容器和容纳工件的处理室之间提供流体连通。 设置加热器以直接或间接地加热工件。 优选地，通过加热供给到工件的处理液来加热工件。 一个或多个喷嘴接受来自液体供应管线的处理液并将其喷射到工件的表面上，同时臭氧发生器将臭氧加入到包含工件的环境中。