公开(公告)号：US10008380B2

公开(公告)日：2018-06-26

申请号：US14287616

申请日：2014-05-27

申请人： EBARA CORPORATION

发明人： Tomoatsu Ishibashi ,  Takahiro Ogawa ,  Kenichi Sugita ,  Shinji Kajita ,  Koichi Fukaya ,  Akira Nakamura

IPC分类号： F26B5/08 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02054 ,  H01L21/02074 ,  H01L21/67034

摘要： A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv′, the projected discharge position Gfv′ being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle α formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle θ/2 to an angle determined by deducting the half contact angle θ/2 from 90°, the half contact angle θ/2 being a half of the contact angle θ.

公开(公告)号：US20170243733A1

公开(公告)日：2017-08-24

申请号：US15052310

申请日：2016-02-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Hung Chen ,  Chia-Jung Hsu ,  Yi-An Lin

IPC分类号： H01L21/02

CPC分类号： H01L21/32115 ,  B24B37/00 ,  H01L21/02013 ,  H01L21/02016 ,  H01L21/02054 ,  H01L21/0209 ,  H01L21/3212 ,  H01L21/673 ,  H01L21/683

摘要： The present disclosure provides a semiconductor fabrication apparatus in accordance with one embodiment. The apparatus includes a wafer stage that is operable to secure and rotate a wafer; a polish head configured to polish a backside surface of the wafer; an air bearing module configured to apply an air pressure to a front surface of the wafer; and an edge sealing unit configured to seal edges of the wafer.

公开(公告)号：US20160079096A1

公开(公告)日：2016-03-17

申请号：US14525118

申请日：2014-10-27

申请人： LAM RESEARCH CORPORATION

发明人： Armen Avoyan ,  Kennet Baylon

IPC分类号： H01L21/67 ,  B08B3/08 ,  H01L21/02

CPC分类号： H01L21/67017 ,  B08B3/08 ,  C23C16/4407 ,  H01J37/32862 ,  H01L21/02052 ,  H01L21/02054

摘要： A system and method of cleaning a plasma processing chamber component includes removing the component from the plasma processing chamber, the removed component including a material deposited on the surface of the component. A heated oxidizing solution is applied to the material deposited on the component to oxidize a first portion deposited material. A stripping solution is applied to the component to remove the oxidized first portion of the deposited material. An etching solution is applied to remove a second portion of the deposited material and the cleaned component can be rinsed and dried.

摘要翻译： 清洁等离子体处理室部件的系统和方法包括从等离子体处理室移除部件，所移除的部件包括沉积在部件表面上的材料。 将加热的氧化溶液施加到沉积在部件上的材料以氧化第一部分沉积材料。 将剥离溶液施加到组分以除去沉积材料的氧化的第一部分。 施加蚀刻溶液以去除沉积材料的第二部分，并且可以清洗和干燥清洁的部件。

公开(公告)号：US09117653B2

公开(公告)日：2015-08-25

申请号：US14061994

申请日：2013-10-24

申请人： The Regents of the University of California

发明人： Tobin Kaufman-Osborn ,  Andrew C. Kummel ,  Kiarash Kiantaj

IPC分类号： H01L21/322 ,  H01L21/02 ,  H01L21/302 ,  H01L21/28

CPC分类号： H01L21/0206 ,  B08B7/0035 ,  H01L21/02046 ,  H01L21/02054 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/28255 ,  H01L21/302 ,  H01L29/161

摘要： A method for in-situ dry cleaning of a Ge containing semiconductor surface, other than SiGe. The method is conducted in a vacuum chamber. An oxygen monolayer(s) is formed and promotes removal of essentially all carbon from the surface, and serves to both clean and functionalize the surface. The Ge semiconductor surface is then annealed at a temperature below that which would induce dopant diffusion.

摘要翻译： 用于除SiGe之外的含Ge半导体表面的原位干洗的方法。 该方法在真空室中进行。 形成氧单层并促进从表面除去基本上所有的碳，并且用于清洁和使表面官能化。 然后，Ge半导体表面在低于会诱导掺杂剂扩散的温度下退火。

公开(公告)号：US20140174465A1

公开(公告)日：2014-06-26

申请号：US14136381

申请日：2013-12-20

申请人： Central Glass Company, Limited

发明人： Soichi KUMON ,  Takashi SAIO ,  Shinobu ARATA ,  Hidehisa NANAI ,  Yoshinori AKAMATSU ,  Shigeo HAMAGUCHI ,  Kazuhiko MAEDA

IPC分类号： H01L21/02

CPC分类号： H01L21/02052 ,  B08B3/00 ,  C09D183/04 ,  C11D3/162 ,  C11D7/5022 ,  H01L21/00 ,  H01L21/02054

摘要： A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

摘要翻译： 一种用于硅晶片（第一清洁剂）的清洁剂至少含有一种水基清洗液和一种防水清洗液，用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。 水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。 利用该清洁剂，可以提高倾向于引起图案塌陷的清洁处理。

公开(公告)号：US20140109930A1

公开(公告)日：2014-04-24

申请号：US14062136

申请日：2013-10-24

申请人： The Regents of the University of California

发明人： Tobin Kaufman-Osborn ,  Andrew C. Kummel ,  Kiarash Kiantaj

IPC分类号： H01L21/02

CPC分类号： H01L21/0206 ,  B08B7/0035 ,  H01L21/02046 ,  H01L21/02054 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/28255 ,  H01L21/302 ,  H01L29/161

摘要： A method for in-situ dry cleaning of a SiGe semiconductor surface doses the SiGe surface with ex-situ wet HF in a clean ambient environment or in-situ dosing with gaseous NH4F to remove oxygen containing contaminants. Dosing the SiGe surface with atomic H removes carbon containing contaminants. Low temperature annealing pulls the surface flat. Passivating the SiGe semiconductor surface with H2O2 vapor for a sufficient time and concentration forms an a oxygen monolayer(s) of —OH sites on the SiGe. Second annealing the SiGe semiconductor surface is conducted at a temperature below that which would induce dopant diffusion. A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF(aq) or NH4F(g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.

摘要翻译： 用于SiGe半导体表面的原位干洗的方法在清洁的周围环境中以非原位湿HF剂量SiGe表面，或者用气态NH 4 F原位配量以除去含氧污染物。 用原子H给SiGe表面去除含碳污染物。 低温退火使表面平坦。 用H 2 O 2蒸气钝化SiGe半导体表面足够的时间和浓度形成SiGe上的-OH单元的氧单层。 SiGe半导体表面的第二次退火在低于将引起掺杂剂扩散的温度下进行。 用于SiGe半导体表面的原位干洗的方法，原位脱脂含Ge半导体表面并去除有机污染物。 然后将表面经由NH 3 + NH或NF 3用H 2或H 2 O生成的HF（aq）或NH 4 F（g），以除去含氧污染物。 用原子H原位计量SiGe表面去除含碳污染物。

公开(公告)号：US20140096793A1

公开(公告)日：2014-04-10

申请号：US14045325

申请日：2013-10-03

申请人： SunEdison, Inc.

发明人： Sasha J. Kweskin ,  Larry W. Shive

IPC分类号： H01L21/02

CPC分类号： H01L21/02054 ,  H01L21/02024 ,  H01L21/02052

摘要： A method is provided for cleaning a surface of a semiconductor wafer comprising: (a) contacting the front surface of the wafer with a slurry comprising an abrasive agent and a polymeric rheological modifier; (b) contacting the front surface of the semiconductor wafer with an oxidant; and (c) irradiating the front surface of the semiconductor wafer with ultraviolet light.

摘要翻译： 提供了一种用于清洁半导体晶片的表面的方法，包括：（a）使晶片的前表面与包含研磨剂和聚合物流变改性剂的浆料接触; （b）使半导体晶片的前表面与氧化剂接触; 和（c）用紫外线照射半导体晶片的前表面。

公开(公告)号：US20120122316A1

公开(公告)日：2012-05-17

申请号：US13384889

申请日：2010-07-27

申请人： Motoi Kurokami ,  Shigeru Okuuchi ,  Hiroaki Sato

发明人： Motoi Kurokami ,  Shigeru Okuuchi ,  Hiroaki Sato

IPC分类号： H01L21/306

CPC分类号： H01L21/02054 ,  H01L21/02049

摘要： An object of the present invention is to provided a wafer exhibiting excellent surface properties, in which variation in reaction, which has been concerned in surface treatment with a diffusion controlled process such as conventional wet treatment, is effectively suppressed in a method for surface treatment of a wafer involving a chemical treatment.Provided is a method for surface treatment of a wafer involving a chemical treatment, the chemical treatment including a reaction controlled process, and a diffusion controlled process following the reaction controlled process.

摘要翻译： 本发明的目的是提供一种显示出优异的表面性质的晶片，其中在常规湿法处理的扩散控制过程中涉及表面处理的反应变化在表面处理方法中被有效地抑制 涉及化学处理的晶片。 提供了一种用于表面处理包括化学处理的晶片的方法，包括反应控制过程的化学处理和反应控制过程之后的扩散控制过程。

公开(公告)号：US20110034037A1

公开(公告)日：2011-02-10

申请号：US12988007

申请日：2009-04-10

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rui Hasebe ,  Masayuki Miyashita

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rui Hasebe ,  Masayuki Miyashita

IPC分类号： H01L21/469 ,  B08B3/00

CPC分类号： H01L21/02052 ,  H01L21/02054 ,  H01L21/0206 ,  Y10S438/906

摘要： Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.

摘要翻译： 公开了一种能够解决现有的清洗方法的问题的半导体基板的清洗方法，该清洗方法应至少包括五个步骤，用于清洗半导体基板等基板。 用于清洗半导体衬底的方法包括用含有臭氧的超纯水清洗衬底的第一步骤，用含有表面活性剂的超纯水清洗衬底的第二步骤以及从表面活性剂中除去有机化合物的第三步骤， 含有超纯水和2-丙醇的清洗液。 在第三步之后，将诸如氪的惰性气体的等离子体施加到基底上以进一步除去源自表面活性剂的有机化合物。

公开(公告)号：US20090188534A1

公开(公告)日：2009-07-30

申请号：US12366660

申请日：2009-02-06

申请人： David Tee LIANG ,  Tuti Mariana Lim ,  Sau Ngen Chen

发明人： David Tee LIANG ,  Tuti Mariana Lim ,  Sau Ngen Chen

IPC分类号： B08B7/04

CPC分类号： H01L21/02046 ,  B08B7/0071 ,  C03B29/025 ,  C03C23/0075 ,  H01L21/02054 ,  H01L21/67028 ,  Y10S438/906

摘要： Contaminants from surfaces of temperature sensitive substrates, such as glass substrates are removed by exposing the surfaces to a hydrogen Surface-mixed diffusion flame for a predetermined duration of time. The predetermined duration of time being insufficient to heat up the surfaces substantially thereby causing damage to the temperature sensitive substrates.

摘要翻译： 通过将表面暴露于氢表面混合扩散火焰预定的持续时间来除去来自诸如玻璃基板的温度敏感性基材表面的污染物。 预定的持续时间不足以加热表面，从而基本上导致对感温基板的损坏。