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公开(公告)号：US20120292773A1
公开(公告)日：2012-11-22
申请号：US13110653
申请日：2011-05-18
IPC分类号： H01L23/52 , H01L21/768 , H01L23/532 , H01L21/78
CPC分类号： C23C4/005 , C23C4/01 , C23C4/08 , C23C4/134 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/741 , H01L24/743 , H01L24/83 , H01L24/85 , H01L2224/03332 , H01L2224/03442 , H01L2224/04026 , H01L2224/04042 , H01L2224/05824 , H01L2224/05847 , H01L2224/05939 , H01L2224/05944 , H01L2224/05966 , H01L2224/05979 , H01L2224/0598 , H01L2224/05981 , H01L2224/0603 , H01L2224/27442 , H01L2224/29082 , H01L2224/292 , H01L2224/29324 , H01L2224/29347 , H01L2224/29439 , H01L2224/29444 , H01L2224/29466 , H01L2224/29479 , H01L2224/2948 , H01L2224/29481 , H01L2224/32245 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8382 , H01L2224/85 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/83205 , H01L2924/00012
摘要： A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation.
摘要翻译： 一种方法在半导体衬底上产生金属层。 通过沉积金属颗粒在半导体衬底上产生金属层。 金属颗粒包括由第一金属材料制成的芯和围绕芯的壳。 壳体由耐氧化的第二金属材料制成。
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公开(公告)号：US07618844B2
公开(公告)日：2009-11-17
申请号：US11206605
申请日：2005-08-18
申请人： James Sheats
发明人： James Sheats
CPC分类号： H01L25/0655 , H01L21/4867 , H01L23/4985 , H01L23/49866 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/90 , H01L2224/0401 , H01L2224/05571 , H01L2224/05705 , H01L2224/05794 , H01L2224/058 , H01L2224/05811 , H01L2224/0582 , H01L2224/05824 , H01L2224/05839 , H01L2224/05844 , H01L2224/05847 , H01L2224/05849 , H01L2224/05855 , H01L2224/05857 , H01L2224/0586 , H01L2224/05866 , H01L2224/05869 , H01L2224/05871 , H01L2224/05872 , H01L2224/0588 , H01L2224/05884 , H01L2224/1132 , H01L2224/114 , H01L2224/116 , H01L2224/13099 , H01L2224/16237 , H01L2224/81097 , H01L2224/81099 , H01L2224/81136 , H01L2224/81141 , H01L2224/81801 , H01L2224/90 , H01L2924/0001 , H01L2924/0002 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1532 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K3/3452 , H05K3/3463 , H01L2924/0108 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor chip packaging on a flexible substrate is disclosed. The chip and the flexible substrate are provided with corresponding raised and indented micron-scale contact pads with the indented contact pads partially filled with a liquid amalgam. After low temperature amalgam curing, the chip and the substrate form a flexible substrate IC packaging with high conductivity, controllable interface layer thickness, micron-scale contact density and low process temperature. Adhesion between the chip and the substrate can be further enhanced by coating other areas with non-conducting adhesive.
摘要翻译： 公开了一种在柔性基板上的半导体芯片封装。 芯片和柔性基板设置有对应的凸起和凹入的微米级接触垫，其中凹入的接触垫部分地填充有液体汞齐。 低温汞合金固化后，芯片和基板形成柔性基板IC封装，导电性高，界面层厚度可控，微米级接触密度低，工艺温度低。 通过用非导电粘合剂涂覆其它区域，可以进一步提高芯片和基板之间的粘合性。
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公开(公告)号：US07964964B2
公开(公告)日：2011-06-21
申请号：US12582940
申请日：2009-10-21
申请人： James Sheats
发明人： James Sheats
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40 , H01L23/485 , H01L23/488
CPC分类号： H01L25/0655 , H01L21/4867 , H01L23/4985 , H01L23/49866 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/90 , H01L2224/0401 , H01L2224/05571 , H01L2224/05705 , H01L2224/05794 , H01L2224/058 , H01L2224/05811 , H01L2224/0582 , H01L2224/05824 , H01L2224/05839 , H01L2224/05844 , H01L2224/05847 , H01L2224/05849 , H01L2224/05855 , H01L2224/05857 , H01L2224/0586 , H01L2224/05866 , H01L2224/05869 , H01L2224/05871 , H01L2224/05872 , H01L2224/0588 , H01L2224/05884 , H01L2224/1132 , H01L2224/114 , H01L2224/116 , H01L2224/13099 , H01L2224/16237 , H01L2224/81097 , H01L2224/81099 , H01L2224/81136 , H01L2224/81141 , H01L2224/81801 , H01L2224/90 , H01L2924/0001 , H01L2924/0002 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1532 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K3/3452 , H05K3/3463 , H01L2924/0108 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor chip packaging on a flexible substrate is disclosed. The chip and the flexible substrate are provided with corresponding raised and indented micron-scale contact pads with the indented contact pads partially filled with a liquid amalgam. After low temperature amalgam curing, the chip and the substrate form a flexible substrate IC packaging with high conductivity, controllable interface layer thickness, micron-scale contact density and low process temperature. Adhesion between the chip and the substrate can be further enhanced by coating other areas with non-conducting adhesive.
摘要翻译： 公开了一种在柔性基板上的半导体芯片封装。 芯片和柔性基板设置有对应的凸起和凹入的微米级接触垫，其中凹入的接触垫部分地填充有液体汞齐。 低温汞合金固化后，芯片和基板形成柔性基板IC封装，导电性高，界面层厚度可控，微米级接触密度低，工艺温度低。 通过用非导电粘合剂涂覆其它区域，可以进一步提高芯片和基板之间的粘合性。
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公开(公告)号：US08912047B2
公开(公告)日：2014-12-16
申请号：US13110653
申请日：2011-05-18
CPC分类号： C23C4/005 , C23C4/01 , C23C4/08 , C23C4/134 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/741 , H01L24/743 , H01L24/83 , H01L24/85 , H01L2224/03332 , H01L2224/03442 , H01L2224/04026 , H01L2224/04042 , H01L2224/05824 , H01L2224/05847 , H01L2224/05939 , H01L2224/05944 , H01L2224/05966 , H01L2224/05979 , H01L2224/0598 , H01L2224/05981 , H01L2224/0603 , H01L2224/27442 , H01L2224/29082 , H01L2224/292 , H01L2224/29324 , H01L2224/29347 , H01L2224/29439 , H01L2224/29444 , H01L2224/29466 , H01L2224/29479 , H01L2224/2948 , H01L2224/29481 , H01L2224/32245 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8382 , H01L2224/85 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/83205 , H01L2924/00012
摘要： A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation.
摘要翻译： 一种方法在半导体衬底上产生金属层。 通过沉积金属颗粒在半导体衬底上产生金属层。 金属颗粒包括由第一金属材料制成的芯和围绕芯的壳。 壳体由耐氧化的第二金属材料制成。
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公开(公告)号：US20100038770A1
公开(公告)日：2010-02-18
申请号：US12582940
申请日：2009-10-21
申请人： James Sheats
发明人： James Sheats
IPC分类号： H01L23/52
CPC分类号： H01L25/0655 , H01L21/4867 , H01L23/4985 , H01L23/49866 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/90 , H01L2224/0401 , H01L2224/05571 , H01L2224/05705 , H01L2224/05794 , H01L2224/058 , H01L2224/05811 , H01L2224/0582 , H01L2224/05824 , H01L2224/05839 , H01L2224/05844 , H01L2224/05847 , H01L2224/05849 , H01L2224/05855 , H01L2224/05857 , H01L2224/0586 , H01L2224/05866 , H01L2224/05869 , H01L2224/05871 , H01L2224/05872 , H01L2224/0588 , H01L2224/05884 , H01L2224/1132 , H01L2224/114 , H01L2224/116 , H01L2224/13099 , H01L2224/16237 , H01L2224/81097 , H01L2224/81099 , H01L2224/81136 , H01L2224/81141 , H01L2224/81801 , H01L2224/90 , H01L2924/0001 , H01L2924/0002 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1532 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K3/3452 , H05K3/3463 , H01L2924/0108 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor chip packaging on a flexible substrate is disclosed. The chip and the flexible substrate are provided with corresponding raised and indented micron-scale contact pads with the indented contact pads partially filled with a liquid amalgam. After low temperature amalgam curing, the chip and the substrate form a flexible substrate IC packaging with high conductivity, controllable interface layer thickness, micron-scale contact density and low process temperature. Adhesion between the chip and the substrate can be further enhanced by coating other areas with non-conducting adhesive.
摘要翻译： 公开了一种在柔性基板上的半导体芯片封装。 芯片和柔性基板设置有对应的凸起和凹入的微米级接触垫，其中凹入的接触垫部分地填充有液体汞齐。 低温汞合金固化后，芯片和基板形成柔性基板IC封装，导电性高，界面层厚度可控，微米级接触密度低，工艺温度低。 通过用非导电粘合剂涂覆其它区域，可以进一步提高芯片和基板之间的粘合性。
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公开(公告)号：US20070040272A1
公开(公告)日：2007-02-22
申请号：US11206605
申请日：2005-08-18
申请人： James Sheats
发明人： James Sheats
IPC分类号： H01L23/48
CPC分类号： H01L25/0655 , H01L21/4867 , H01L23/4985 , H01L23/49866 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/90 , H01L2224/0401 , H01L2224/05571 , H01L2224/05705 , H01L2224/05794 , H01L2224/058 , H01L2224/05811 , H01L2224/0582 , H01L2224/05824 , H01L2224/05839 , H01L2224/05844 , H01L2224/05847 , H01L2224/05849 , H01L2224/05855 , H01L2224/05857 , H01L2224/0586 , H01L2224/05866 , H01L2224/05869 , H01L2224/05871 , H01L2224/05872 , H01L2224/0588 , H01L2224/05884 , H01L2224/1132 , H01L2224/114 , H01L2224/116 , H01L2224/13099 , H01L2224/16237 , H01L2224/81097 , H01L2224/81099 , H01L2224/81136 , H01L2224/81141 , H01L2224/81801 , H01L2224/90 , H01L2924/0001 , H01L2924/0002 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1532 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K3/3452 , H05K3/3463 , H01L2924/0108 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor chip packaging on a flexible substrate is disclosed. The chip and the flexible substrate are provided with corresponding raised and indented micron-scale contact pads with the indented contact pads partially filled with a liquid amalgam. After low temperature amalgam curing, the chip and the substrate form a flexible substrate IC packaging with high conductivity, controllable interface layer thickness, micron-scale contact density and low process temperature. Adhesion between the chip and the substrate can be further enhanced by coating other areas with non-conducting adhesive.
摘要翻译： 公开了一种在柔性基板上的半导体芯片封装。 芯片和柔性基板设置有对应的凸起和凹入的微米级接触垫，其中凹入的接触垫部分地填充有液体汞齐。 低温汞合金固化后，芯片和基板形成柔性基板IC封装，导电性高，界面层厚度可控，微米级接触密度低，工艺温度低。 通过用非导电粘合剂涂覆其它区域，可以进一步提高芯片和基板之间的粘合性。
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